JP4540993B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4540993B2 JP4540993B2 JP2004011774A JP2004011774A JP4540993B2 JP 4540993 B2 JP4540993 B2 JP 4540993B2 JP 2004011774 A JP2004011774 A JP 2004011774A JP 2004011774 A JP2004011774 A JP 2004011774A JP 4540993 B2 JP4540993 B2 JP 4540993B2
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- oxide film
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- 239000004065 semiconductor Substances 0.000 title claims description 166
- 238000004519 manufacturing process Methods 0.000 title claims description 69
- 239000012535 impurity Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 77
- 230000003647 oxidation Effects 0.000 claims description 73
- 238000007254 oxidation reaction Methods 0.000 claims description 73
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 238000005755 formation reaction Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 38
- 230000015654 memory Effects 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000001039 wet etching Methods 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 7
- 238000009841 combustion method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 66
- 238000009792 diffusion process Methods 0.000 description 50
- 230000008569 process Effects 0.000 description 47
- 239000012298 atmosphere Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 16
- 238000002955 isolation Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- 230000003213 activating effect Effects 0.000 description 3
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- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
以下に、本発明の半導体装置の製造方法の第一の実施形態について、図1〜5を参照しながら説明する。本実施形態の半導体装置は、半導体記憶素子部30と記憶素子以外の半導体素子であるCMOS部50とを一つのチップ上に形成したものである。
以下に、本発明の半導体装置の製造方法の第二の実施形態について、図6〜10を参照しながら説明する。本実施形態の半導体装置も、半導体記憶素子部30と記憶素子以外の半導体素子であるCMOS部50とを一つのチップ上に形成したものである。
以下に、本発明の半導体装置の製造方法の第三の実施形態について、図11〜16を参照しながら説明する。本実施形態の半導体装置も半導体記憶素子部30と記憶素子以外の半導体素子であるCMOS部50とを一つのチップ上に形成したものである。
以下に、本発明の半導体装置の製造方法の第四の実施形態について、図17〜22を参照しながら説明する。本実施形態の半導体装置も半導体記憶素子部30と記憶素子以外の半導体素子であるCMOS部50とを一つのチップ上に形成したものである。
以下に、本発明の半導体装置の製造方法の第五の実施形態について、図23〜27を参照しながら説明する。本実施形態の半導体装置も半導体記憶素子部30と記憶素子以外の半導体素子であるCMOS部50とを一つのチップ上に形成したものである。また、本実施形態は、第一の実施形態においてビットライン拡散層11とビットライン酸化膜12とを形成した後に、さらにアニール工程を加えたものである。
2 素子分離絶縁膜
3 不純物注入層
4 第一のゲート酸化膜
5 第二のゲート酸化膜
6 第三のゲート酸化膜
7 CMOS部のゲート電極
8 側壁絶縁膜
9 ソース/ドレイン拡散層
10 ONO膜
11 ビットライン拡散層
12 ビットライン酸化膜
13 半導体記憶素子部のゲート電極
14 層間絶縁膜
15 コンタクト開口
30 半導体記憶素子部
50 CMOS部(記憶素子以外の半導体素子)
Claims (6)
- 半導体基板上に、ゲート絶縁膜としてONO(酸化シリコン層/窒化シリコン層/酸化シリコン層)膜を有する半導体記憶素子と、記憶素子以外の半導体素子とを形成する半導体装置の製造方法であって、
前記半導体基板表面にONO膜を形成する工程と、
前記記憶素子以外の半導体素子が形成される領域の前記ONO膜を除去する工程と、
前記ONO膜が除去された前記記憶素子以外の半導体素子が形成される領域に第2の不純物を注入してウエルを形成する工程と、
前記半導体基板の一部に第1の不純物を導入することにより前記半導体記憶素子のビットラインを形成する工程Xと、
前記ビットライン上に、隣接する前記半導体記憶素子を絶縁分離するビットライン酸化膜を形成する工程Yと、
前記第2の不純物が注入された領域上に熱酸化膜を形成する工程と
を含み、
前記ビットライン酸化膜の形成と前記熱酸化膜の形成とを同時に行う、半導体装置の製造方法。 - 前記熱酸化膜形成工程は、複数回行われ、
前記複数回の熱酸化膜形成のうちのいずれかの熱酸化膜形成と前記ビットライン酸化膜の形成とを同時に行う、請求項1に記載の半導体装置の製造方法。 - 前記ビットライン酸化膜の形成と前記熱酸化膜の形成とは、内部燃焼方式を用いた酸化方法により行われる、請求項1または2に記載の半導体装置の製造方法。
- 前記ビットライン酸化膜の形成と前記熱酸化膜の形成とは、前記熱酸化膜の酸化レートが前記ビットライン酸化膜の酸化レートの80%以上である酸化方法により行われる、請求項1または2に記載の半導体装置の製造方法。
- 前記工程Yの後、少なくとも前記熱酸化膜の膜厚をウェットエッチングにより減少させる工程をさらに備える、請求項1から4のいずれか一つに記載の半導体装置の製造方法。
- 前記工程Xと前記工程Yの後に、アニール工程をさらに備える、請求項1から5のいずれか一つに記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004011774A JP4540993B2 (ja) | 2004-01-20 | 2004-01-20 | 半導体装置の製造方法 |
US11/033,624 US7214578B2 (en) | 2004-01-20 | 2005-01-13 | Method for fabricating semiconductor device |
US11/527,459 US7309629B2 (en) | 2002-01-02 | 2006-09-27 | Method for fabricating semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004011774A JP4540993B2 (ja) | 2004-01-20 | 2004-01-20 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005209693A JP2005209693A (ja) | 2005-08-04 |
JP4540993B2 true JP4540993B2 (ja) | 2010-09-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004011774A Expired - Fee Related JP4540993B2 (ja) | 2002-01-02 | 2004-01-20 | 半導体装置の製造方法 |
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US (1) | US7214578B2 (ja) |
JP (1) | JP4540993B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7390718B2 (en) * | 2004-02-20 | 2008-06-24 | Tower Semiconductor Ltd. | SONOS embedded memory with CVD dielectric |
US20060148139A1 (en) * | 2005-01-06 | 2006-07-06 | Ng Hock K | Selective second gate oxide growth |
US9111985B1 (en) * | 2007-01-11 | 2015-08-18 | Cypress Semiconductor Corporation | Shallow bipolar junction transistor |
CN103811421B (zh) * | 2012-11-13 | 2016-12-21 | 北大方正集团有限公司 | 一种形成氧化层的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297096B1 (en) | 1997-06-11 | 2001-10-02 | Saifun Semiconductors Ltd. | NROM fabrication method |
US6346442B1 (en) * | 1999-02-04 | 2002-02-12 | Tower Semiconductor Ltd. | Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array |
JP2001351987A (ja) | 2000-06-09 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
JP3986742B2 (ja) | 2000-09-25 | 2007-10-03 | 旺宏電子股▲ふん▼有限公司 | メモリセル形成方法 |
JP2002246486A (ja) | 2001-02-16 | 2002-08-30 | Sharp Corp | 半導体装置の製造方法 |
JP2003086716A (ja) | 2001-09-11 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
JP2003282743A (ja) | 2002-03-22 | 2003-10-03 | Nec Electronics Corp | 半導体装置とその製造方法 |
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2004
- 2004-01-20 JP JP2004011774A patent/JP4540993B2/ja not_active Expired - Fee Related
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- 2005-01-13 US US11/033,624 patent/US7214578B2/en active Active
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Publication number | Publication date |
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JP2005209693A (ja) | 2005-08-04 |
US7214578B2 (en) | 2007-05-08 |
US20050158954A1 (en) | 2005-07-21 |
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