JP4508708B2 - Euv光を用いた露光装置および露光方法 - Google Patents
Euv光を用いた露光装置および露光方法 Download PDFInfo
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- JP4508708B2 JP4508708B2 JP2004116805A JP2004116805A JP4508708B2 JP 4508708 B2 JP4508708 B2 JP 4508708B2 JP 2004116805 A JP2004116805 A JP 2004116805A JP 2004116805 A JP2004116805 A JP 2004116805A JP 4508708 B2 JP4508708 B2 JP 4508708B2
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- Prior art keywords
- light
- euv
- diffraction grating
- exposure apparatus
- euv light
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- 238000000034 method Methods 0.000 title claims description 12
- 230000003287 optical effect Effects 0.000 claims description 60
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 230000006870 function Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
2×d×cosθ=λ (1)
d×(cosβ−cosα)=m×λ (2)式
(2)式において、mは回折の次数であって整数値をとる。またブレーズ条件は(3)式で示され、(3)式の条件をほぼ満たす次数の回折強度が強くなる。
α−β=2×θ (3)式
Claims (9)
- プラズマ光源からのEUV光を用いて基板を露光するEUV露光装置において、
当該プラズマ光源からの光束を導光する光路中にブレーズ型回折格子構造を有する光学素子を備え、
前記ブレーズ型回折格子構造を有する光学素子は、最も回折強度が高いEUV光の回折光の両側にEUV光以外の光線の回折光のうちの回折次数が0次及び1次の回折光が位置するように回折するブレーズ角を有しており、
前記最も回折強度が高いEUV光の回折光の回折次数は4次以上の高次の回折次数であって、当該回折次数が4次以上の高次の回折次数を有するEUV光を用いて前記基板を露光する
ことを特徴とするEUV露光装置。 - 前記ブレーズ型回折格子構造を有する光学素子の表面にはEUV光を回折して反射する多層膜ミラーが設けられていることを特徴とする請求項1に記載のEUV露光装置。
- 前記ブレーズ型回折格子構造を有する光学素子の表面には金、白金、モリブデン、ルテニウム、ロジウム、のいずれかの金属、またはそのいずれかの合金からなる反射膜が設けられていることを特徴とする請求項1に記載のEUV露光装置。
- 前記ブレーズ型回折格子構造を有する光学素子はブレーズ型回折格子構造の単位形状が曲率を有し、オプティカルインテグレータとして機能することを特徴とする請求項1乃至3記載のEUV露光装置。
- 前記ブレーズ型回折格子構造を有する光学素子は、ブレーズ型回折格子構造の単位形状に対し鏡面反射の方向にEUV光を射出し、EUV光以外の光線はブレーズ型回折格子構造の単位形状に対し鏡面反射とは異なる方向に射出することを特徴とする請求項1乃至4記載のEUV露光装置。
- 前記ブレーズ型回折格子構造を有する光学素子により回折されたEUV光以外の光線を吸収する光線吸収部材を有することを特徴とする請求項1乃至5記載のEUV露光装置。
- 前記光線吸収部材は、冷却手段を有することを特徴とする請求項6に記載のEUV露光装置。
- 前記ブレーズ型回折格子構造を有する光学素子により回折されたEUV光以外の光線をEUV光とは別に導光する光学系を有することを特徴とする請求項1乃至5記載のEUV露光装置。
- 請求項1乃至8に記載のEUV露光装置を用いることを特徴とする半導体装置の露光方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004116805A JP4508708B2 (ja) | 2004-04-12 | 2004-04-12 | Euv光を用いた露光装置および露光方法 |
US11/103,041 US7436490B2 (en) | 2004-04-12 | 2005-04-11 | Exposure apparatus using blaze type diffraction grating to diffract EUV light and device manufacturing method using the exposure apparatus |
EP05252272A EP1586949A3 (en) | 2004-04-12 | 2005-04-12 | Exposure apparatus and exposure method using EUV light |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004116805A JP4508708B2 (ja) | 2004-04-12 | 2004-04-12 | Euv光を用いた露光装置および露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005302998A JP2005302998A (ja) | 2005-10-27 |
JP4508708B2 true JP4508708B2 (ja) | 2010-07-21 |
Family
ID=34940782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004116805A Expired - Fee Related JP4508708B2 (ja) | 2004-04-12 | 2004-04-12 | Euv光を用いた露光装置および露光方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7436490B2 (ja) |
EP (1) | EP1586949A3 (ja) |
JP (1) | JP4508708B2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2417071B (en) * | 2004-08-13 | 2006-12-20 | Rolls Royce Plc | Temperature measuring system |
JP2007067344A (ja) * | 2005-09-02 | 2007-03-15 | Canon Inc | 露光装置および方法ならびにデバイス製造方法 |
JP4924604B2 (ja) * | 2006-03-10 | 2012-04-25 | 株式会社ニコン | 投影光学系、露光装置および半導体デバイスの製造方法 |
JP2007294673A (ja) * | 2006-04-25 | 2007-11-08 | Nikon Corp | 露光装置 |
US20080180696A1 (en) * | 2007-01-30 | 2008-07-31 | Sony Corporation | Process window for EUV lithography |
NL1036702A1 (nl) * | 2008-04-15 | 2009-10-19 | Asml Holding Nv | Diffraction elements for alignment targets. |
NL1036891A1 (nl) * | 2008-05-02 | 2009-11-03 | Asml Netherlands Bv | Dichroic mirror, method for manufacturing a dichroic mirror, lithographic apparatus, semiconductor device and method of manufacturing therefor. |
JP5061063B2 (ja) * | 2008-05-20 | 2012-10-31 | ギガフォトン株式会社 | 極端紫外光用ミラーおよび極端紫外光源装置 |
JP5061069B2 (ja) * | 2008-05-20 | 2012-10-31 | ギガフォトン株式会社 | 極端紫外光を用いる半導体露光装置 |
JP5492891B2 (ja) * | 2008-08-15 | 2014-05-14 | エーエスエムエル ネザーランズ ビー.ブイ. | ミラー、リソグラフィ装置、およびデバイス製造方法 |
NL2002545C2 (nl) * | 2009-02-20 | 2010-08-24 | Univ Twente | Werkwijze voor het splitsen van een bundel met elektromagnetische straling met golflengtes in het extreem ultraviolet (euv) en het infrarood (ir) golflengtegebied en optisch tralie en optische inrichting daarvoor. |
DE102009044462A1 (de) * | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
JP5637702B2 (ja) | 2010-03-09 | 2014-12-10 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
DE102010003446A1 (de) * | 2010-03-30 | 2011-02-24 | Carl Zeiss Smt Gmbh | Reflektives optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
JP5419900B2 (ja) * | 2011-01-01 | 2014-02-19 | キヤノン株式会社 | フィルタ、露光装置及びデバイス製造方法 |
JP5953656B2 (ja) * | 2011-05-09 | 2016-07-20 | 株式会社ニコン | 照明光学装置、露光装置、及びデバイス製造方法 |
EP2533078B1 (en) * | 2011-06-09 | 2014-02-12 | ASML Netherlands BV | Radiation source and lithographic apparatus |
DE102011084650A1 (de) * | 2011-10-17 | 2013-04-18 | Carl Zeiss Smt Gmbh | Diffraktive optische Elemente für EUV-Strahlung |
DE102012010093A1 (de) | 2012-05-23 | 2013-11-28 | Carl Zeiss Smt Gmbh | Facettenspiegel |
DE102014203348A1 (de) * | 2014-02-25 | 2015-08-27 | Carl Zeiss Smt Gmbh | Bündelverteilungsoptik, Beleuchtungsoptik mit einer derartigen Bündelverteilungsoptik, optisches System mit einer derartigen Beleuchtungsoptik sowie Projektionsbelichtungsanlage mit einem derartigen optischen System |
TWI715039B (zh) * | 2014-06-03 | 2021-01-01 | 荷蘭商Asml荷蘭公司 | 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法 |
DE102014117453A1 (de) * | 2014-11-27 | 2016-06-02 | Carl Zeiss Smt Gmbh | Kollektorspiegel für Mikrolithografie |
US10616987B2 (en) * | 2015-08-28 | 2020-04-07 | Kla-Tencor Corporation | System and method for imaging a sample with an illumination source modified by a spatial selective wavelength filter |
WO2016187139A1 (en) * | 2015-05-20 | 2016-11-24 | Kla-Tencor Corporation | System and method for imaging a sample with an illumination source modified by a spatial selective wavelength filter |
DE102017204312A1 (de) | 2016-05-30 | 2017-11-30 | Carl Zeiss Smt Gmbh | Optische Wellenlängen-Filterkomponente für ein Lichtbündel |
DE102016212361A1 (de) * | 2016-07-06 | 2018-01-11 | Carl Zeiss Smt Gmbh | Optisches Gitter und optische Anordnung damit |
WO2020140234A1 (zh) * | 2019-01-03 | 2020-07-09 | 京东方科技集团股份有限公司 | 模板制备方法 |
JP7403271B2 (ja) * | 2019-10-10 | 2023-12-22 | ギガフォトン株式会社 | 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法 |
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JP3958134B2 (ja) * | 2002-07-12 | 2007-08-15 | キヤノン株式会社 | 測定装置 |
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-
2004
- 2004-04-12 JP JP2004116805A patent/JP4508708B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-11 US US11/103,041 patent/US7436490B2/en not_active Expired - Fee Related
- 2005-04-12 EP EP05252272A patent/EP1586949A3/en not_active Withdrawn
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JPH01175736A (ja) * | 1987-12-29 | 1989-07-12 | Canon Inc | 反射型マスクならびにこれを用いた露光方法 |
JPH07297103A (ja) * | 1994-04-22 | 1995-11-10 | Hitachi Ltd | パターン形成方法、投影露光装置、光学系及びその設計方法 |
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Also Published As
Publication number | Publication date |
---|---|
US7436490B2 (en) | 2008-10-14 |
EP1586949A2 (en) | 2005-10-19 |
JP2005302998A (ja) | 2005-10-27 |
US20050236585A1 (en) | 2005-10-27 |
EP1586949A3 (en) | 2007-12-26 |
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