JP4421629B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4421629B2 JP4421629B2 JP2007115473A JP2007115473A JP4421629B2 JP 4421629 B2 JP4421629 B2 JP 4421629B2 JP 2007115473 A JP2007115473 A JP 2007115473A JP 2007115473 A JP2007115473 A JP 2007115473A JP 4421629 B2 JP4421629 B2 JP 4421629B2
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 73
- 229920005591 polysilicon Polymers 0.000 claims description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施形態は、3水準の膜厚のゲート絶縁膜を持つ半導体装置の製造方法についての実施形態である。
図1(a)乃至(c)〜図8(a)乃至(c)は、本実施形態に係る半導体装置の製造方法を例示する工程断面図である。
上述の如く、本実施形態によれば、3水準の膜厚のゲート絶縁膜を1つのチップ上に作り込むことができるため、3種類のスレッショルド電圧を持つトランジスタの作り込みが可能となる。これにより、相互に異なる機能を持つ回路、例えば、アナログ回路とデジタル回路とを1つのチップ上に混載することが可能となり、ダイサイズの大幅な縮小を図ることができる。この結果、パッケージの小型化を図ることができる。
このように、本実施形態によれば、工程が簡略で形状の制御性が高い半導体装置を製造することができる。
Claims (4)
- 上面に第1領域、第2領域及び第3領域が設定されたシリコン基板における前記第2領域に対してトランジスタのチャネルを形成するための不純物を注入する工程と、
前記第2領域に対して不純物を注入する工程の後、前記シリコン基板の上面の前記第1領域を覆い前記第2領域及び前記第3領域を覆わないように第1のシリコン酸化膜を形成する工程と、
前記第1のシリコン酸化膜を形成する工程の後、前記シリコン基板に酸化処理を施すことにより、前記第1領域に形成された前記第1のシリコン酸化膜を厚膜化すると共に前記第2領域及び前記第3領域に第2のシリコン酸化膜を形成する工程と、
前記第2のシリコン酸化膜を形成する工程の後、前記第1領域に対してトランジスタのチャネルを形成するための不純物を注入する工程と、
前記第1領域に対して不純物を注入する工程の後、前記第1領域及び前記第2領域を覆い前記第3領域を覆わないように第1のポリシリコン膜を形成する工程と、
前記第1のポリシリコン膜を形成する工程の後、前記第3領域に対してトランジスタのチャネルを形成するための不純物を注入する工程と、
前記第3領域に対して不純物を注入する工程の後、前記第1のポリシリコン膜をマスクとしてエッチングを行い、前記第3領域に形成された前記第2のシリコン酸化膜を除去する工程と、
前記第2のシリコン酸化膜を除去する工程の後、前記第3領域に前記第2のシリコン酸化膜よりも薄い第3のシリコン酸化膜を形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記第3のシリコン酸化膜上に第2のポリシリコン膜を形成する工程と、
前記第1及び第2のポリシリコン膜をパターニングしてゲート電極を形成する工程と、
をさらに備えたことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第2のポリシリコン膜を形成する工程の後、前記ゲート電極を形成する工程の前に、前記第1のポリシリコン膜及び前記第2のポリシリコン膜を覆うように第3のポリシリコン膜を形成する工程をさらに備え、
前記ゲート電極を形成する工程において、前記第1及び第2のポリシリコン膜と共に前記第3のポリシリコン膜もパターニングすることを特徴とする請求項2記載の半導体装置の製造方法。 - 前記第1領域、前記第2領域及び前記第3領域のそれぞれに、選択的に第1導電型ウェルを形成する工程と、
前記第1導電型ウェルを形成する工程の後、各前記第1導電型ウェル内に第2導電型ウェルを形成する工程と、
前記第2導電型ウェルを形成する工程の後、素子分離膜を形成する工程と、
をさらに備え、
前記素子分離膜を形成する工程の後、前記第2領域に対して不純物を注入する工程を実施することを特徴とする請求項1〜3のいずれか1つに記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007115473A JP4421629B2 (ja) | 2007-04-25 | 2007-04-25 | 半導体装置の製造方法 |
US12/107,444 US8034695B2 (en) | 2007-04-25 | 2008-04-22 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
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JP2007115473A JP4421629B2 (ja) | 2007-04-25 | 2007-04-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008277320A JP2008277320A (ja) | 2008-11-13 |
JP4421629B2 true JP4421629B2 (ja) | 2010-02-24 |
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JP2007115473A Expired - Fee Related JP4421629B2 (ja) | 2007-04-25 | 2007-04-25 | 半導体装置の製造方法 |
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US (1) | US8034695B2 (ja) |
JP (1) | JP4421629B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4421629B2 (ja) * | 2007-04-25 | 2010-02-24 | 株式会社東芝 | 半導体装置の製造方法 |
JP2011233684A (ja) | 2010-04-27 | 2011-11-17 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2014207361A (ja) | 2013-04-15 | 2014-10-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JP3304803B2 (ja) * | 1997-02-07 | 2002-07-22 | ヤマハ株式会社 | 多電源半導体装置の製造方法 |
JPH10247725A (ja) * | 1997-03-05 | 1998-09-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5861347A (en) * | 1997-07-03 | 1999-01-19 | Motorola Inc. | Method for forming a high voltage gate dielectric for use in integrated circuit |
US6376879B2 (en) * | 1998-06-08 | 2002-04-23 | Kabushiki Kaisha Toshiba | Semiconductor device having MISFETs |
JP3189819B2 (ja) * | 1999-01-27 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2001015505A (ja) | 1999-07-01 | 2001-01-19 | Sony Corp | 絶縁膜の形成方法及び半導体装置の製造方法 |
US6258673B1 (en) * | 1999-12-22 | 2001-07-10 | International Business Machines Corporation | Multiple thickness of gate oxide |
JP2002009168A (ja) * | 2000-06-19 | 2002-01-11 | Nec Corp | 半導体装置及びその製造方法 |
JP2002110812A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | 半導体装置およびその製造方法 |
US6545904B2 (en) * | 2001-03-16 | 2003-04-08 | Micron Technology, Inc. | 6f2 dram array, a dram array formed on a semiconductive substrate, a method of forming memory cells in a 6f2 dram array and a method of isolating a single row of memory cells in a 6f2 dram array |
JP2002343879A (ja) * | 2001-05-15 | 2002-11-29 | Nec Corp | 半導体装置及びその製造方法 |
JP4717283B2 (ja) * | 2001-08-10 | 2011-07-06 | 三洋電機株式会社 | ゲート絶縁膜の形成方法 |
JP2004087960A (ja) * | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4518830B2 (ja) | 2004-04-13 | 2010-08-04 | 株式会社リコー | 半導体装置の製造方法 |
US7084035B2 (en) * | 2004-04-13 | 2006-08-01 | Ricoh Company, Ltd. | Semiconductor device placing high, medium, and low voltage transistors on the same substrate |
JP2006019515A (ja) * | 2004-07-01 | 2006-01-19 | Renesas Technology Corp | 半導体装置の製造方法 |
US7205630B2 (en) * | 2004-07-12 | 2007-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor device having low and high voltage transistors |
US7126172B2 (en) * | 2004-10-12 | 2006-10-24 | Freescale Semiconductor, Inc. | Integration of multiple gate dielectrics by surface protection |
US8482052B2 (en) * | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
JP2006222151A (ja) * | 2005-02-08 | 2006-08-24 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US7253114B2 (en) * | 2005-03-16 | 2007-08-07 | Taiwan Semiconductor Manufacturing Company | Self-aligned method for defining a semiconductor gate oxide in high voltage device area |
JP4421629B2 (ja) * | 2007-04-25 | 2010-02-24 | 株式会社東芝 | 半導体装置の製造方法 |
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2007
- 2007-04-25 JP JP2007115473A patent/JP4421629B2/ja not_active Expired - Fee Related
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- 2008-04-22 US US12/107,444 patent/US8034695B2/en not_active Expired - Fee Related
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JP2008277320A (ja) | 2008-11-13 |
US20080265328A1 (en) | 2008-10-30 |
US8034695B2 (en) | 2011-10-11 |
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