JP4320019B2 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
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- JP4320019B2 JP4320019B2 JP2006003445A JP2006003445A JP4320019B2 JP 4320019 B2 JP4320019 B2 JP 4320019B2 JP 2006003445 A JP2006003445 A JP 2006003445A JP 2006003445 A JP2006003445 A JP 2006003445A JP 4320019 B2 JP4320019 B2 JP 4320019B2
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- power
- sputtering apparatus
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- pair
- Prior art date
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- 238000004544 sputter deposition Methods 0.000 title claims description 31
- 230000010355 oscillation Effects 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 14
- 238000001514 detection method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
11 真空チャンバ
41a、41b ターゲット
6 電力供給部
7 発振部
8 ブスバー
E 交流電源
Claims (6)
- 真空チャンバ内で相互に隣接配置された一対のターゲットと、この一対のターゲットに対し所定の周波数で交互に極性をかえて電圧を印加する交流電源とを備え、
前記交流電源が、直流電力の供給を可能とする電力供給部と、この電力供給部からの電力ラインに接続された発振用スイッチ回路と一対の出力端子とを有する発振部とに分けて構成され、
この発振部の各出力端子と各ターゲットとを板状のブスバーによってそれぞれ接続したことを特徴とするスパッタリング装置。 - 前記ブスバーは、その表面をAuまたはAgの薄膜で覆ったものであることを特徴とする請求項1記載のスパッタリング装置。
- 前記ブスバーを伸縮自在としたことを特徴とする請求項1または請求項2記載のスパッタリング装置。
- 前記発振部の筐体を真空チャンバの外壁に取付けたことを特徴とする請求項1乃至請求項3のいずれかに記載のスパッタリング装置。
- 前記真空チャンバ内に一対のターゲットを複数並設すると共に一対のターゲット毎に交流電源を設け、各ターゲットの前方に磁束をそれぞれ形成するように各ターゲットの後方に設けられ、交互に極性を変えて設けた複数個の磁石から構成される磁石組立体を配置したことを特徴とする請求項1乃至請求項4のいずれかに記載のスパッタリング装置。
- 前記磁束がターゲットに対して平行移動自在であるように各磁石組立体を一体に駆動する駆動手段を設けたことを特徴とする請求項5記載のスパッタリング装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006003445A JP4320019B2 (ja) | 2006-01-11 | 2006-01-11 | スパッタリング装置 |
TW096101144A TWI390065B (zh) | 2006-01-11 | 2007-01-11 | Sputtering device |
PCT/JP2007/050201 WO2007080906A1 (ja) | 2006-01-11 | 2007-01-11 | スパッタリング装置 |
KR1020087016806A KR101018652B1 (ko) | 2006-01-11 | 2007-01-11 | 스퍼터링 장치 |
CN2007800022085A CN101370958B (zh) | 2006-01-11 | 2007-01-11 | 溅射装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006003445A JP4320019B2 (ja) | 2006-01-11 | 2006-01-11 | スパッタリング装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007186726A JP2007186726A (ja) | 2007-07-26 |
JP2007186726A5 JP2007186726A5 (ja) | 2009-02-19 |
JP4320019B2 true JP4320019B2 (ja) | 2009-08-26 |
Family
ID=38256311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006003445A Active JP4320019B2 (ja) | 2006-01-11 | 2006-01-11 | スパッタリング装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4320019B2 (ja) |
KR (1) | KR101018652B1 (ja) |
CN (1) | CN101370958B (ja) |
TW (1) | TWI390065B (ja) |
WO (1) | WO2007080906A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5124345B2 (ja) * | 2008-05-26 | 2013-01-23 | 株式会社アルバック | バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置 |
JP5429771B2 (ja) * | 2008-05-26 | 2014-02-26 | 株式会社アルバック | スパッタリング方法 |
JP5186281B2 (ja) * | 2008-05-26 | 2013-04-17 | 株式会社アルバック | バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置 |
JP5500794B2 (ja) * | 2008-06-30 | 2014-05-21 | 株式会社アルバック | 電源装置 |
JP5429772B2 (ja) * | 2008-06-30 | 2014-02-26 | 株式会社アルバック | 電源装置 |
KR101583667B1 (ko) * | 2009-03-06 | 2016-01-08 | 위순임 | 다중 소스 타겟 어셈블리를 갖는 물리적 기상 증착 플라즈마 반응기 |
CN104878361B (zh) * | 2015-06-24 | 2017-05-31 | 安徽纯源镀膜科技有限公司 | 磁控溅射镀膜设备 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6210285A (ja) * | 1985-07-05 | 1987-01-19 | Hitachi Ltd | プラズマ処理装置 |
JPH0668839A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Electron Ltd | プラズマ装置における高周波給電装置 |
JP3100279B2 (ja) * | 1994-01-24 | 2000-10-16 | 三菱重工業株式会社 | 真空装置への高周波電力供給方法 |
JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
-
2006
- 2006-01-11 JP JP2006003445A patent/JP4320019B2/ja active Active
-
2007
- 2007-01-11 WO PCT/JP2007/050201 patent/WO2007080906A1/ja active Application Filing
- 2007-01-11 CN CN2007800022085A patent/CN101370958B/zh active Active
- 2007-01-11 TW TW096101144A patent/TWI390065B/zh active
- 2007-01-11 KR KR1020087016806A patent/KR101018652B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101018652B1 (ko) | 2011-03-04 |
TW200736406A (en) | 2007-10-01 |
CN101370958A (zh) | 2009-02-18 |
WO2007080906A1 (ja) | 2007-07-19 |
JP2007186726A (ja) | 2007-07-26 |
CN101370958B (zh) | 2010-09-15 |
KR20080078054A (ko) | 2008-08-26 |
TWI390065B (zh) | 2013-03-21 |
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