JP4194600B2 - データ転送方法及びシステム - Google Patents
データ転送方法及びシステム Download PDFInfo
- Publication number
- JP4194600B2 JP4194600B2 JP2005503226A JP2005503226A JP4194600B2 JP 4194600 B2 JP4194600 B2 JP 4194600B2 JP 2005503226 A JP2005503226 A JP 2005503226A JP 2005503226 A JP2005503226 A JP 2005503226A JP 4194600 B2 JP4194600 B2 JP 4194600B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- volatile memory
- memory
- controller
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/202—Non-volatile memory
- G06F2212/2022—Flash memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Description
1)フラッシュメモリ→SRAM:容量不足、電源切断てデータ消去
2)フラッシュメモリ→擬似SRAM:電源切断でデータ消去、消費電流大
3)SRAM→フラッシュメモリ:書き込み時間長い
4)SRAM→擬似SRAM:消費電流大
5)擬似SRAM→フラッシュメモリ:書き込み時間長い
6)擬似SRAM→SRAM:容量不足
上記1)、6)は容量不足の問題を解決することが困難である。2)は電源切断でデータ消去されるので不可である。従って、これら3つの置き換えは現在の携帯電話仕様及びシステムではありえない。このことからフラッシュメモリは必要不可欠であり、また上記5)の書き込み時間の関係を考えると、擬似SRAMも必要なメモリ装置であるといえる。従って、SRAMを他のメモリで代用できるかどうかが課題となる。
Dynamic Random Access Memory)、FRAM(Ferroelectric Random
Access Memory)等でも同様の機能が実現できる。
11 擬似SRAM
12 フラッシュメモリ
13 システムバス
Claims (10)
- コントローラから揮発性メモリのメモリコアにデータを書き込み、
前記コントローラからのデータ読み出し要求に応じて、前記メモリコアのデータを前記揮発性メモリのデータレジスタに読みだし、
該揮発性メモリを転送処理状態にし、
前記転送処理状態において、前記データレジスタからデータを不揮発性メモリに転送し、
前記データの転送の終了を確認すると該揮発性メモリの該転送処理状態を解除し、
該揮発性メモリは該転送処理状態においてリフレッシュ動作を停止することを特徴とするデータ転送方法。 - 該転送処理状態を解除する段階は、
該揮発性メモリから該データを読み出し第1のデータとし、
該不揮発性メモリから該データを読み出し第2のデータとし、
該第1のデータと該第2のデータとが一致するとの判定に応じて該揮発性メモリの該転送処理状態を解除する
ことを特徴とする請求項1記載のデータ転送方法。 - 該コントローラから該揮発性メモリにフラグを書き込み、
該データの転送の終了を確認すると該フラグの値を書き換える
ことを特徴とする請求項1記載のデータ転送方法。 - 該コントローラ、該揮発性メモリ、及び該不揮発性メモリは別々のチップであることを特徴とする請求項1記載のデータ転送方法。
- コントローラと、
揮発性メモリと、
不揮発性メモリと、
を備えたデータ転送システムにおいて、
前記コントローラは、
前記揮発性メモリのメモリコアにデータを書き込んだ後に前記揮発性メモリを転送処理状態にするとともに、前記不揮発性メモリに前記データを転送した後に前記揮発性メモリの転送処理状態を解除し、
前記揮発性メモリは、
前記コントローラからの読み出し要求に応じて、前記メモリコアのデータを前記揮発性メモリのデータレジスタに読み出し、前記転送処理状態において、前記データレジスタに読み出されたデータを前記不揮発性メモリに転送し、前記転送処理状態においては、リフレッシュ動作が停止されること
を特徴とするデータ転送システム。 - 該コントローラは、該揮発性メモリにフラグを書き込み、該データの転送の終了を確認すると該フラグの値を書き換えることを特徴とする請求項5記載のデータ転送システム。
- 前記揮発性メモリは、
リフレッシュ動作によるデータ保持が必要なメモリコア回路と、
外部電源電圧を降圧して降圧電位電源を生成する降圧回路と、
外部からのコマンドに応答して該リフレッシュ動作を停止する回路と、
外部からの該コマンドに応答して該降圧電位電源の消費を開始する回路と
を含むことを特徴とする請求項5記載のデータ転送システム。 - 前記揮発性メモリは、
前記コントローラからのデータを受け取る書込みレジスタを備え、
前記書込みレジスタのビット数は、前記データレジスタのビット数よりも少ないこと
を特徴とする請求項5乃至7の何れか一項に記載のデータ転送システム。 - 前記コントローラは、
前記揮発性メモリから該データを読み出された第1のデータと、前記不揮発性メモリから読み出された第2のデータとを比較し、前記第1のデータと前記第2のデータとが一致したときに前記揮発性メモリの該転送処理状態を解除すること
を特徴とする請求項5乃至8の何れか一項に記載のデータ転送システム。 - 前記コントローラは前記揮発性メモリのnビット書き込みレジスタにデータを書込み、
前記データレジスタはnの整数倍のビット数を有すること
を特徴とする請求項1乃至4の何れか一項に記載のデータ転送方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/008211 WO2005001694A1 (ja) | 2003-06-27 | 2003-06-27 | データ転送方法及びシステム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005001694A1 JPWO2005001694A1 (ja) | 2006-08-10 |
JP4194600B2 true JP4194600B2 (ja) | 2008-12-10 |
Family
ID=33549054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005503226A Expired - Fee Related JP4194600B2 (ja) | 2003-06-27 | 2003-06-27 | データ転送方法及びシステム |
Country Status (8)
Country | Link |
---|---|
US (1) | US7730232B2 (ja) |
EP (2) | EP1640872B1 (ja) |
JP (1) | JP4194600B2 (ja) |
KR (1) | KR100685770B1 (ja) |
CN (1) | CN100353336C (ja) |
AU (1) | AU2003244008A1 (ja) |
DE (2) | DE60324203D1 (ja) |
WO (1) | WO2005001694A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7779165B2 (en) * | 2002-01-11 | 2010-08-17 | Oracle America, Inc. | Scalable method for producer and consumer elimination |
CN100505796C (zh) * | 2004-11-24 | 2009-06-24 | 中兴通讯股份有限公司 | 一种手机显示时间的方法 |
FR2888032A1 (fr) * | 2005-06-30 | 2007-01-05 | Gemplus Sa | Procede de gestion de memoire non volatile dans une carte a puce |
US7748031B2 (en) | 2005-07-08 | 2010-06-29 | Sandisk Corporation | Mass storage device with automated credentials loading |
US8966284B2 (en) | 2005-09-14 | 2015-02-24 | Sandisk Technologies Inc. | Hardware driver integrity check of memory card controller firmware |
US20070061597A1 (en) * | 2005-09-14 | 2007-03-15 | Micky Holtzman | Secure yet flexible system architecture for secure devices with flash mass storage memory |
EP1850347A1 (en) * | 2006-04-28 | 2007-10-31 | Deutsche Thomson-Brandt Gmbh | Method and device for writing to a flash memory |
JP2008112486A (ja) * | 2006-10-30 | 2008-05-15 | Toshiba Corp | 半導体装置 |
US7554855B2 (en) * | 2006-12-20 | 2009-06-30 | Mosaid Technologies Incorporated | Hybrid solid-state memory system having volatile and non-volatile memory |
CN101685381B (zh) | 2008-09-26 | 2013-07-24 | 美光科技公司 | 固态大容量存储装置的数据串流 |
KR100958741B1 (ko) * | 2008-10-24 | 2010-05-19 | 주식회사 파이널데이터 | 이기종 모바일 기기 간의 데이터 전달 시스템 및 그 방법 |
CN102629187B (zh) * | 2012-02-29 | 2014-12-10 | 珠海全志科技股份有限公司 | Sd/mmc卡的开放式读写控制方法 |
KR102050474B1 (ko) * | 2012-09-26 | 2019-11-29 | 삼성전자주식회사 | 휘발성 메모리 장치 및 메모리 컨트롤러 |
CN104943397B (zh) * | 2015-06-25 | 2016-08-17 | 珠海艾派克微电子有限公司 | 成像盒芯片、成像盒以及更换成像盒芯片序列号的方法 |
KR102631812B1 (ko) | 2019-05-17 | 2024-01-30 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 정적 랜덤 액세스 메모리가 있는 3차원 메모리 디바이스 |
EP3909048A4 (en) | 2019-05-17 | 2022-08-17 | Yangtze Memory Technologies Co., Ltd. | PROGRAM CACHE OPERATION OF A THREE-DIMENSIONAL STORAGE DEVICE WITH STATIC RANDOM ACCESS MEMORY |
Family Cites Families (14)
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US3723972A (en) * | 1971-11-24 | 1973-03-27 | A Chadda | Data communication system |
JP2750704B2 (ja) * | 1988-08-29 | 1998-05-13 | 日立マクセル株式会社 | Icカードの情報書込み方式及びicカード |
US5592348A (en) * | 1991-05-17 | 1997-01-07 | Adaptec, Inc. | Method and structure for locating and skipping over servo bursts on a magnetic disk |
EP0898232A2 (en) * | 1994-08-31 | 1999-02-24 | Motorola, Inc. | Method for synchronously accessing memory |
US5710943A (en) * | 1995-06-30 | 1998-01-20 | Maxtor Corporation | Time based data retention in a variable data rate disk drive |
JP2806324B2 (ja) * | 1995-08-25 | 1998-09-30 | 日本電気株式会社 | 内部降圧回路 |
JPH1083345A (ja) * | 1996-09-09 | 1998-03-31 | Fujitsu Ltd | フラッシュ・メモリのデータ更新装置 |
KR100249171B1 (ko) * | 1997-03-12 | 2000-03-15 | 김영환 | 비동기식 데이터 송수신 장치의 에러 검출 방법 |
JP2000228094A (ja) * | 1999-02-04 | 2000-08-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4216457B2 (ja) * | 2000-11-30 | 2009-01-28 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置及び半導体装置 |
US6865701B1 (en) * | 2001-03-29 | 2005-03-08 | Apple Computer, Inc. | Method and apparatus for improved memory core testing |
EP1251521A1 (en) * | 2001-04-19 | 2002-10-23 | STMicroelectronics S.r.l. | A dynamic random access memory device externally functionally equivalent to a static random access memory |
JP4049297B2 (ja) * | 2001-06-11 | 2008-02-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3979486B2 (ja) * | 2001-09-12 | 2007-09-19 | 株式会社ルネサステクノロジ | 不揮発性記憶装置およびデータ格納方法 |
-
2003
- 2003-06-27 DE DE60324203T patent/DE60324203D1/de not_active Expired - Lifetime
- 2003-06-27 AU AU2003244008A patent/AU2003244008A1/en not_active Abandoned
- 2003-06-27 DE DE60328057T patent/DE60328057D1/de not_active Expired - Lifetime
- 2003-06-27 EP EP03736289A patent/EP1640872B1/en not_active Expired - Fee Related
- 2003-06-27 JP JP2005503226A patent/JP4194600B2/ja not_active Expired - Fee Related
- 2003-06-27 CN CNB038252740A patent/CN100353336C/zh not_active Expired - Fee Related
- 2003-06-27 WO PCT/JP2003/008211 patent/WO2005001694A1/ja active Application Filing
- 2003-06-27 EP EP07108166A patent/EP1821312B1/en not_active Expired - Fee Related
- 2003-06-27 KR KR1020057007112A patent/KR100685770B1/ko not_active IP Right Cessation
-
2005
- 2005-04-25 US US11/113,181 patent/US7730232B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60324203D1 (de) | 2008-11-27 |
KR100685770B1 (ko) | 2007-02-26 |
US20050185493A1 (en) | 2005-08-25 |
CN100353336C (zh) | 2007-12-05 |
EP1640872B1 (en) | 2008-10-15 |
EP1821312A1 (en) | 2007-08-22 |
EP1821312B1 (en) | 2009-06-17 |
CN1701306A (zh) | 2005-11-23 |
AU2003244008A1 (en) | 2005-01-13 |
KR20050070083A (ko) | 2005-07-05 |
EP1640872A1 (en) | 2006-03-29 |
JPWO2005001694A1 (ja) | 2006-08-10 |
WO2005001694A1 (ja) | 2005-01-06 |
US7730232B2 (en) | 2010-06-01 |
EP1640872A4 (en) | 2006-11-15 |
DE60328057D1 (de) | 2009-07-30 |
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