JP4177847B2 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
- Publication number
- JP4177847B2 JP4177847B2 JP2006001456A JP2006001456A JP4177847B2 JP 4177847 B2 JP4177847 B2 JP 4177847B2 JP 2006001456 A JP2006001456 A JP 2006001456A JP 2006001456 A JP2006001456 A JP 2006001456A JP 4177847 B2 JP4177847 B2 JP 4177847B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- read
- cell
- data
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Description
まず、この発明の第1の実施形態の不揮発性半導体記憶装置について説明する。
次に、この発明の第2の実施形態の不揮発性半導体記憶装置について説明する。
次に、この発明の第3の実施形態の不揮発性半導体記憶装置について説明する。
次に、この発明の第4の実施形態の不揮発性半導体記憶装置について説明する。
Claims (1)
- 第1メモリセルと、前記第1メモリセルに隣接して配置され、かつ前記第1メモリセルと共通のワード線に接続された第2メモリセルと、前記第1メモリセルに隣接して配置され、かつ前記第1メモリセルと共通のビット線に接続された第3メモリセルと、前記第2メモリセルに隣接して配置され、かつ前記第2メモリセルと共通のビット線に接続された第4メモリセルとを含む複数のメモリセルが行列状に配列されたメモリセルアレイと、
前記メモリセルに書き込みを行う書き込み回路と、
前記メモリセルが持つしきい値に基づいて判定電位を補正する判定電位補正回路と、
前記判定電位補正回路により補正された前記判定電位を用いて前記メモリセルを読み出す読み出し回路とを具備し、
前記書き込み回路により第1メモリセル、第2メモリセル、第3メモリセル、及び第4メモリセルの順序で書き込みを行ったとき、
前記第1メモリセルを読み出す際、前記判定電位補正回路は前記第2,第3メモリセルが持つしきい値に基づいて第1判定電位を補正し、前記読み出し回路は前記第1判定電位を用いて前記第1メモリセルを読み出し、
前記第2メモリセルを読み出す際、前記判定電位補正回路は前記第4メモリセルが持つしきい値に基づいて第2判定電位を補正し、前記読み出し回路は前記第2判定電位を用いて前記第2メモリセルを読み出すことを特徴とする不揮発性半導体記憶装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006001456A JP4177847B2 (ja) | 2006-01-06 | 2006-01-06 | 不揮発性半導体記憶装置 |
US11/474,340 US20070159881A1 (en) | 2006-01-06 | 2006-06-26 | Nonvolatile semiconductor memory device including nand-type flash memory and the like |
KR1020070001281A KR100895555B1 (ko) | 2006-01-06 | 2007-01-05 | Nand형 플래시 메모리 등을 포함하는 불휘발성 반도체기억 장치 |
US12/354,946 US7859898B2 (en) | 2006-01-06 | 2009-01-16 | Nonvolatile semiconductor memory device including NAND-type flash memory and the like |
US12/955,621 US8139407B2 (en) | 2006-01-06 | 2010-11-29 | Nonvolatile semiconductor memory device including NAND-type flash memory and the like |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006001456A JP4177847B2 (ja) | 2006-01-06 | 2006-01-06 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007184040A JP2007184040A (ja) | 2007-07-19 |
JP4177847B2 true JP4177847B2 (ja) | 2008-11-05 |
Family
ID=38232594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006001456A Expired - Fee Related JP4177847B2 (ja) | 2006-01-06 | 2006-01-06 | 不揮発性半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (3) | US20070159881A1 (ja) |
JP (1) | JP4177847B2 (ja) |
KR (1) | KR100895555B1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101041595B1 (ko) * | 2006-06-19 | 2011-06-15 | 샌디스크 코포레이션 | 비휘발성 메모리에서 개선된 판독 동작을 위해 선택 상태에서 보상을 사용하여 감지 및 다른 크기의 마진 프로그래밍 |
KR101270685B1 (ko) * | 2007-08-24 | 2013-06-03 | 삼성전자주식회사 | 비휘발성 메모리의 데이터 처리 장치 및 방법 |
KR101379820B1 (ko) * | 2007-10-17 | 2014-04-01 | 삼성전자주식회사 | 멀티-비트 프로그래밍 장치와 메모리 데이터 검출 장치 |
KR20090075062A (ko) * | 2008-01-03 | 2009-07-08 | 삼성전자주식회사 | 플로팅 바디 트랜지스터를 이용한 동적 메모리 셀을구비하는 메모리 셀 어레이를 구비하는 반도체 메모리 장치 |
JP2009252293A (ja) * | 2008-04-07 | 2009-10-29 | Hitachi Ltd | 不揮発性半導体記憶装置 |
JP2010009733A (ja) * | 2008-06-30 | 2010-01-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8797795B2 (en) * | 2008-07-01 | 2014-08-05 | Lsi Corporation | Methods and apparatus for intercell interference mitigation using modulation coding |
KR101468149B1 (ko) | 2008-09-19 | 2014-12-03 | 삼성전자주식회사 | 플래시 메모리 장치 및 시스템들 그리고 그것의 읽기 방법 |
JP2010092559A (ja) | 2008-10-10 | 2010-04-22 | Toshiba Corp | Nand型フラッシュメモリ |
US8130556B2 (en) * | 2008-10-30 | 2012-03-06 | Sandisk Technologies Inc. | Pair bit line programming to improve boost voltage clamping |
KR101642465B1 (ko) | 2008-12-12 | 2016-07-25 | 삼성전자주식회사 | 불휘발성 메모리 장치의 액세스 방법 |
JP2012069203A (ja) | 2010-09-22 | 2012-04-05 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の駆動方法 |
JP2012069193A (ja) | 2010-09-22 | 2012-04-05 | Toshiba Corp | 不揮発性半導体記憶装置およびその制御方法 |
JP2012069192A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | メモリシステム |
US8837223B2 (en) | 2011-11-21 | 2014-09-16 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacuring the same |
JP2013242944A (ja) | 2012-05-22 | 2013-12-05 | Toshiba Corp | 半導体記憶装置 |
US9001577B2 (en) * | 2012-06-01 | 2015-04-07 | Micron Technology, Inc. | Memory cell sensing |
JP2014006940A (ja) * | 2012-06-21 | 2014-01-16 | Toshiba Corp | 半導体記憶装置 |
JP2016173868A (ja) * | 2015-03-17 | 2016-09-29 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US9966125B2 (en) * | 2016-09-15 | 2018-05-08 | Toshiba Memory Corporation | Memory device |
CN109791792B (zh) | 2016-09-23 | 2023-08-22 | 铠侠股份有限公司 | 存储装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US6314026B1 (en) * | 1999-02-08 | 2001-11-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor device using local self boost technique |
JP3875570B2 (ja) * | 2001-02-20 | 2007-01-31 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 |
US6781877B2 (en) | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
JP3914142B2 (ja) * | 2002-11-29 | 2007-05-16 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP3889699B2 (ja) * | 2002-11-29 | 2007-03-07 | 株式会社東芝 | 不揮発性半導体記憶装置及びそのデータ書き込み方法 |
JP3935139B2 (ja) | 2002-11-29 | 2007-06-20 | 株式会社東芝 | 半導体記憶装置 |
JP3913704B2 (ja) | 2003-04-22 | 2007-05-09 | 株式会社東芝 | 不揮発性半導体記憶装置及びこれを用いた電子装置 |
JP4212444B2 (ja) * | 2003-09-22 | 2009-01-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7372730B2 (en) | 2004-01-26 | 2008-05-13 | Sandisk Corporation | Method of reading NAND memory to compensate for coupling between storage elements |
US7366013B2 (en) * | 2005-12-09 | 2008-04-29 | Micron Technology, Inc. | Single level cell programming in a multiple level cell non-volatile memory device |
JP2010009733A (ja) | 2008-06-30 | 2010-01-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2010092559A (ja) | 2008-10-10 | 2010-04-22 | Toshiba Corp | Nand型フラッシュメモリ |
-
2006
- 2006-01-06 JP JP2006001456A patent/JP4177847B2/ja not_active Expired - Fee Related
- 2006-06-26 US US11/474,340 patent/US20070159881A1/en not_active Abandoned
-
2007
- 2007-01-05 KR KR1020070001281A patent/KR100895555B1/ko not_active IP Right Cessation
-
2009
- 2009-01-16 US US12/354,946 patent/US7859898B2/en active Active
-
2010
- 2010-11-29 US US12/955,621 patent/US8139407B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8139407B2 (en) | 2012-03-20 |
US20070159881A1 (en) | 2007-07-12 |
US20090129158A1 (en) | 2009-05-21 |
US7859898B2 (en) | 2010-12-28 |
JP2007184040A (ja) | 2007-07-19 |
KR100895555B1 (ko) | 2009-04-29 |
US20110069542A1 (en) | 2011-03-24 |
KR20070074477A (ko) | 2007-07-12 |
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