JP4135594B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP4135594B2 JP4135594B2 JP2003294938A JP2003294938A JP4135594B2 JP 4135594 B2 JP4135594 B2 JP 4135594B2 JP 2003294938 A JP2003294938 A JP 2003294938A JP 2003294938 A JP2003294938 A JP 2003294938A JP 4135594 B2 JP4135594 B2 JP 4135594B2
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- capacitor
- pixel
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- 238000003384 imaging method Methods 0.000 title claims description 24
- 239000003990 capacitor Substances 0.000 claims description 75
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000005070 sampling Methods 0.000 description 28
- 238000012546 transfer Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 101150082606 VSIG1 gene Proteins 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Q1=C1(Vrst−Vclp)
Q2=C2×Vclp
Vout=Vclp+C1(Vsig−Vrst)/(C1+C2)
上記の式から明らかなように、もし画素にトランジスタのしきい値電圧のばらつきがあったとしても、(Vsig−Vrst)によって固定パターンノイズを除去できる。
Q11=C11(Vrst1−Vclp)
Q12=C12×Vclp
Vout1=Vclp+C11(Vsig1−Vrst1)/(C11+C12)
Q13=C11(Vrst2−Vclp)
Q14=C13×Vclp
Vout2=Vclp+C11(Vsig2−Vrst2)/(C11+C13)
その結果、選択画素行n+1の画素にトランジスタのしきい値電圧のばらつきがあったとしても、(Vsig2−Vrst2)によって固定パターンノイズが除去される。ノードN3の電圧Vout2はそのままコンデンサ38に保持される。なお、コンデンサ35,38の容量C12,C13は略同一である。
Claims (2)
- 光電変換素子を含む画素が行列状に配置されてなる画素アレイ部と、各画素列に対応して配線された信号線と、前記信号線の各々に対して配設された複数のノイズ除去手段とを備えた固体撮像装置であって、
各々の前記ノイズ除去手段は、
前記信号線に一端が接続された第1のコンデンサと、
前記第1のコンデンサの他端に入力端が接続された第1のスイッチ手段と、
前記第1のスイッチ手段の出力端と基準電位との間に接続された第2のコンデンサと、
前記第1のスイッチ手段の入力端と前記第1のコンデンサの他端との接続ノードの電位を所定の電位にクランプするクランプ手段とを有し、
前記複数のノイズ除去手段は、前記第1のコンデンサを相互間で共有し、
前記信号線は、前記複数のノイズ除去手段の各々の前記第2のコンデンサが前記画素アレイ部から最も離れたノイズ除去手段が形成された領域まで等間隔で延在している
ことを特徴とする固体撮像装置。 - 光電変換素子を含む画素が行列状に配置されてなる画素アレイ部の各画素列ごとに配線された信号線を含む固体撮像装置であって、
前記信号線に一端が接続された第1のコンデンサと、
前記第1のコンデンサの他端に入力端が接続された第1のスイッチ手段と、
前記第1のスイッチ手段の出力端と基準電位との間に接続された第2のコンデンサと、
前記第1のスイッチ手段の出力端と前記第2のコンデンサとの接続ノードの電位を所定の電位にクランプする第1のクランプ手段と、
前記第1のスイッチ手段の出力端に接続され、前記画素により得られた信号を出力する第1の出力手段と、
前記第1のコンデンサの他端に入力端が接続された第2のスイッチ手段と、
前記第2のスイッチ手段の出力端と基準電位との間に接続された第3のコンデンサと、
前記第2のスイッチ手段の出力端と前記第3のコンデンサとの接続ノードの電位を所定の電位にクランプする第2のクランプ手段と
前記第2のスイッチ手段の出力端に接続され、前記画素により得られた信号を出力する第2の出力手段と、
を備えたことを特徴とする固体撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003294938A JP4135594B2 (ja) | 2003-08-19 | 2003-08-19 | 固体撮像装置 |
TW093123506A TWI248298B (en) | 2003-08-19 | 2004-08-05 | Solid-state imaging device |
US10/914,352 US7432964B2 (en) | 2003-08-19 | 2004-08-09 | Solid-state imaging device with plural CDS circuits per column sharing a capacitor and/or clamping transistor |
KR1020040064974A KR20050020658A (ko) | 2003-08-19 | 2004-08-18 | 고체 촬상 장치 |
US12/217,072 US20090046187A1 (en) | 2003-08-19 | 2008-06-30 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003294938A JP4135594B2 (ja) | 2003-08-19 | 2003-08-19 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005065069A JP2005065069A (ja) | 2005-03-10 |
JP4135594B2 true JP4135594B2 (ja) | 2008-08-20 |
Family
ID=34191070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003294938A Expired - Fee Related JP4135594B2 (ja) | 2003-08-19 | 2003-08-19 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7432964B2 (ja) |
JP (1) | JP4135594B2 (ja) |
KR (1) | KR20050020658A (ja) |
TW (1) | TWI248298B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4135594B2 (ja) * | 2003-08-19 | 2008-08-20 | ソニー株式会社 | 固体撮像装置 |
JP3814609B2 (ja) * | 2003-12-12 | 2006-08-30 | キヤノン株式会社 | 撮像装置、及び撮像装置の駆動方法 |
JP5055469B2 (ja) * | 2006-08-04 | 2012-10-24 | 新世代株式会社 | イメージセンサ及びイメージセンサシステム |
US7714903B2 (en) * | 2006-08-29 | 2010-05-11 | Zoran Corporation | Wide dynamic range image capturing system method and apparatus |
JP5340643B2 (ja) * | 2008-06-03 | 2013-11-13 | オリンパス株式会社 | 固体撮像装置 |
US20100271517A1 (en) * | 2009-04-24 | 2010-10-28 | Yannick De Wit | In-pixel correlated double sampling pixel |
CN111164965B (zh) * | 2017-10-03 | 2023-07-18 | 索尼半导体解决方案公司 | 固态摄像器件和电子设备 |
CN108391071B (zh) * | 2017-11-23 | 2020-04-14 | 南京邮电大学 | 一种采用二次相关双采样技术的spad阵列级读出电路 |
US11089252B2 (en) * | 2019-01-23 | 2021-08-10 | STMicroelectronics (Grolles 2) SAS | Pixel with global shutter |
JP2022119633A (ja) * | 2021-02-04 | 2022-08-17 | キヤノン株式会社 | 光電変換装置、電子機器および基板 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2913876B2 (ja) * | 1991-03-08 | 1999-06-28 | ソニー株式会社 | 固体撮像装置 |
JPH04313268A (ja) * | 1991-04-10 | 1992-11-05 | Sony Corp | 固体撮像装置 |
GB9619088D0 (en) * | 1996-09-12 | 1996-10-23 | Vlsi Vision Ltd | Ofset cancellation in array image sensors |
JP4196029B2 (ja) | 1998-04-10 | 2008-12-17 | 株式会社ニコン | 撮像回路および撮像装置 |
JP3559714B2 (ja) | 1998-09-02 | 2004-09-02 | キヤノン株式会社 | 撮像装置およびそれを用いた撮像システム |
US6307195B1 (en) * | 1999-10-26 | 2001-10-23 | Eastman Kodak Company | Variable collection of blooming charge to extend dynamic range |
US6710804B1 (en) * | 2000-01-18 | 2004-03-23 | Eastman Kodak Company | CMOS active pixel image sensor with extended dynamic range and sensitivity |
JP3827146B2 (ja) | 2001-09-12 | 2006-09-27 | ソニー株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
JP3899859B2 (ja) | 2001-07-11 | 2007-03-28 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
JP4135594B2 (ja) * | 2003-08-19 | 2008-08-20 | ソニー株式会社 | 固体撮像装置 |
-
2003
- 2003-08-19 JP JP2003294938A patent/JP4135594B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-05 TW TW093123506A patent/TWI248298B/zh not_active IP Right Cessation
- 2004-08-09 US US10/914,352 patent/US7432964B2/en not_active Expired - Fee Related
- 2004-08-18 KR KR1020040064974A patent/KR20050020658A/ko not_active Application Discontinuation
-
2008
- 2008-06-30 US US12/217,072 patent/US20090046187A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20050020658A (ko) | 2005-03-04 |
US20050040318A1 (en) | 2005-02-24 |
TWI248298B (en) | 2006-01-21 |
JP2005065069A (ja) | 2005-03-10 |
US20090046187A1 (en) | 2009-02-19 |
US7432964B2 (en) | 2008-10-07 |
TW200509691A (en) | 2005-03-01 |
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