JP3992059B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP3992059B2 JP3992059B2 JP2005336190A JP2005336190A JP3992059B2 JP 3992059 B2 JP3992059 B2 JP 3992059B2 JP 2005336190 A JP2005336190 A JP 2005336190A JP 2005336190 A JP2005336190 A JP 2005336190A JP 3992059 B2 JP3992059 B2 JP 3992059B2
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- 238000006243 chemical reaction Methods 0.000 claims description 67
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 229920002050 silicone resin Polymers 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
以下、本実施形態の発光装置について図1〜図5を参照しながら説明する。
図8に示す本実施形態の発光装置1の基本構成は実施形態1と略同じであって、色変換部材70に、実装基板20との間の空間に封止樹脂材料を注入する注入孔71および封止樹脂材料の余剰分を排出する排出孔72が形成されており、色変換部材70における実装基板20側の端縁と実装基板20とを上記端縁の全周に亘って接着剤からなる接合部75により接合している点などが相違し、実装基板20に色変換部材70を固着した後で実装基板20と色変換部材70とで囲まれた空間に封止樹脂材料を注入する製造方法を採用することが可能となる。本実施形態では、実施形態1に比べて、色変換部材70と実装基板20との間に介在する接合部75の厚みの制御が容易になるとともに、色変換部材70と実装基板20との接合の信頼性が向上する。ここで、接合部75の接着剤としては、色変換部材70と同じ材料を用いることが望ましい。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基板
23 リードパターン
26 レジスト層
30 サブマウント部材
50 封止部
50b 光出射面
70 色変換部材
70a 内面
Claims (2)
- LEDチップと、LEDチップが一表面側に実装された実装基板と、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明樹脂材料とともに成形した成形品であって実装基板との間にLEDチップを囲む形で実装基板の前記一表面側に固着されたドーム状の色変換部材と、実装基板と色変換部材とで囲まれた空間内でLEDチップを封止した封止樹脂材料からなる封止部とを備え、封止部は、当該封止部の一部であって第1の封止樹脂材料により形成されLEDチップを覆った部分と、第1の封止樹脂材料と同一材料からなる第2の封止樹脂材料により形成された当該封止部の他の部分とで構成され、当該封止部の光出射面が色変換部材の内面に密着した凸レンズ状の形状に形成されてなる発光装置の製造方法であって、実装基板にLEDチップを実装してLEDチップとボンディングワイヤとを接続した後、LEDチップおよびボンディングワイヤを封止部の一部となる未硬化の第1の封止樹脂材料により覆ってから、第1の封止樹脂材料と同一材料からなり封止部の他の部分となる未硬化の第2の封止樹脂材料を内側に入れた色変換部材を実装基板に対して位置決めして各封止樹脂材料を硬化させることにより封止部を形成することを特徴とする発光装置の製造方法。
- LEDチップと、LEDチップが一表面側に実装された実装基板と、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明樹脂材料とともに成形した成形品であって実装基板との間にLEDチップを囲む形で実装基板の前記一表面側に固着されたドーム状の色変換部材と、実装基板と色変換部材とで囲まれた空間内でLEDチップを封止した封止樹脂材料からなる封止部とを備え、封止部は、当該封止部の一部であって第1の封止樹脂材料により形成されLEDチップを覆った部分と、第1の封止樹脂材料と同一材料からなる第2の封止樹脂材料により形成された当該封止部の他の部分とで構成され、当該封止部の光出射面が色変換部材の内面に密着した凸レンズ状の形状に形成されてなり、色変換部材は、実装基板との間の空間に第2の封止樹脂材料を注入する注入孔および第2の封止樹脂材料の余剰分を排出する排出孔が形成されてなる発光装置の製造方法であって、実装基板にLEDチップを実装してLEDチップとボンディングワイヤとを接続した後、LEDチップおよびボンディングワイヤを封止部の一部となる未硬化の第1の封止樹脂材料により覆い、その後、色変換部材を実装基板に固着してから、色変換部材と実装基板とで囲まれた空間へ第1の封止樹脂材料と同一材料からなり封止部の他の部分となる未硬化の第2の封止樹脂材料を色変換部材の注入孔を通して充填し、その後、各封止樹脂材料を硬化させることにより封止部を形成することを特徴とする発光装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005336190A JP3992059B2 (ja) | 2005-11-21 | 2005-11-21 | 発光装置の製造方法 |
PCT/JP2005/024032 WO2007057983A1 (ja) | 2005-11-21 | 2005-12-28 | 発光装置 |
CN2005800521205A CN101313414B (zh) | 2005-11-21 | 2005-12-28 | 发光装置的制造方法 |
EP05844849.9A EP1953834B1 (en) | 2005-11-21 | 2005-12-28 | Light-emitting device |
US12/094,143 US7767475B2 (en) | 2005-11-21 | 2005-12-28 | Light emitting device |
KR1020087015051A KR101010230B1 (ko) | 2005-11-21 | 2005-12-28 | 발광 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005336190A JP3992059B2 (ja) | 2005-11-21 | 2005-11-21 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007142279A JP2007142279A (ja) | 2007-06-07 |
JP3992059B2 true JP3992059B2 (ja) | 2007-10-17 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2005336190A Active JP3992059B2 (ja) | 2005-11-21 | 2005-11-21 | 発光装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7767475B2 (ja) |
EP (1) | EP1953834B1 (ja) |
JP (1) | JP3992059B2 (ja) |
KR (1) | KR101010230B1 (ja) |
CN (1) | CN101313414B (ja) |
WO (1) | WO2007057983A1 (ja) |
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JP4049186B2 (ja) * | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
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WO2007034575A1 (ja) * | 2005-09-20 | 2007-03-29 | Matsushita Electric Works, Ltd. | 発光装置 |
US7948001B2 (en) * | 2005-09-20 | 2011-05-24 | Panasonic Electric Works, Co., Ltd. | LED lighting fixture |
-
2005
- 2005-11-21 JP JP2005336190A patent/JP3992059B2/ja active Active
- 2005-12-28 EP EP05844849.9A patent/EP1953834B1/en not_active Not-in-force
- 2005-12-28 US US12/094,143 patent/US7767475B2/en not_active Expired - Fee Related
- 2005-12-28 WO PCT/JP2005/024032 patent/WO2007057983A1/ja active Application Filing
- 2005-12-28 CN CN2005800521205A patent/CN101313414B/zh not_active Expired - Fee Related
- 2005-12-28 KR KR1020087015051A patent/KR101010230B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1953834A1 (en) | 2008-08-06 |
WO2007057983A1 (ja) | 2007-05-24 |
CN101313414B (zh) | 2010-05-26 |
EP1953834B1 (en) | 2018-12-12 |
KR20080073343A (ko) | 2008-08-08 |
JP2007142279A (ja) | 2007-06-07 |
CN101313414A (zh) | 2008-11-26 |
KR101010230B1 (ko) | 2011-01-21 |
US20080258164A1 (en) | 2008-10-23 |
US7767475B2 (en) | 2010-08-03 |
EP1953834A4 (en) | 2013-09-25 |
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