JP3827334B2 - ITO sintered body and sputtering target - Google Patents
ITO sintered body and sputtering target Download PDFInfo
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- JP3827334B2 JP3827334B2 JP19938893A JP19938893A JP3827334B2 JP 3827334 B2 JP3827334 B2 JP 3827334B2 JP 19938893 A JP19938893 A JP 19938893A JP 19938893 A JP19938893 A JP 19938893A JP 3827334 B2 JP3827334 B2 JP 3827334B2
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Description
【０００１】
【産業上の利用分野】
本発明は、スパッタリングターゲットとして優れたＩＴＯ焼結体に関するものである。
【０００２】
【従来の技術】
液晶を中心とする表示デバイスの発展に伴い、透明導電膜の需要が増加しているなか、透明導電膜は低抵抗、高透明性という点でＩＴＯ（酸化インジウム、酸化錫）膜が広く用いられている。ＩＴＯ透明導電膜の形成方法としては操作性の簡便さという点からスパッタリング法が一般的であり、ＩＴＯ焼結体からなるターゲットを用いたスパッタリング法が広く適用されている。特に最近では液晶のカラー化、素子の微細化、アクティブマトリックス方式の採用に伴い、高性能なＩＴＯ透明導電膜が要求されている。
【０００３】
通常、ＩＴＯ焼結体は、酸化インジウム粉末と酸化錫粉末の混合粉末（ＩＴＯ粉末）を加圧成型後、焼結して製造されている。
【０００４】
ＩＴＯ焼結体の原料として用いる酸化インジウム粉末または酸化錫粉末の調製は、各々の金属水酸化物、有機金属塩、無機金属塩やゾル、ゲル等を熱分解したり、また、直接ＩＴＯ粉末を調製する方法としては、インジウムと錫との均一混合溶液に沈殿形成剤を添加して共沈させた生成物（例えば、特開昭６２−７６２７、特開昭６０−１８６４１６号公報等）や加水分解により生成した生成物（例えば、特開昭５８−３６９２５号公報等）を加熱分解して製造する方法等が知られている。
【０００５】
しかし、このような方法で得られた原料粉末から得られた焼結体の密度は、いまだ十分な密度を有することができず、ＩＴＯ焼結体（酸化錫１０％含有）の理論密度である７．１５ｇ／ｃｍ3の６５％程度のもの（〜４．６５ｇ／ｃｍ3）であった。このような密度の低いＩＴＯ焼結体は、導電性が悪く、熱伝導性、抗折力が低いため、これをスパッタリングターゲットとして使用した場合、導電性、光透過性に優れた高性能なＩＴＯ膜の成膜が極めて困難であったばかりか、ターゲット表面の還元によるノジュールの発生、成膜速度が遅い等スパッタ操作性が悪いという問題点を有していた。
【０００６】
このような問題を解決するために、高密度なＩＴＯ焼結体を得る方法が種々検討され、その一例として、ＩＴＯ焼結体に焼結助剤としてＳｉ、Ｇｅ等を添加する方法が提案されている（例えば、特開昭６１−１３６９５４号公報）。
【０００７】
しかしながら、高密度な焼結体を得るためには、Ｓｉ、Ｇｅ等の添加量を多くする必要があり、また、このような焼結体からなるスパッタリングタヘゲットから得られた透明導電膜中には、Ｓｉ、Ｇｅが混入し、低抵抗な膜を得ることが難しかった。
【０００８】
【発明が解決しようとする課題】
したがって、導電性、光透過性に優れたＩＴＯ膜を与えることができ、ターゲット表面の還元によるノジュールの発生や、ターゲットの割れ、ターゲットからの破損微粒物の飛散りの問題がないＩＴＯ焼結体が望まれていた。
【０００９】
【課題を解決するための手段】
本発明者らは、上記のような現状に鑑み鋭意検討を重ねた結果、酸化インジウムおよび酸化錫からなる焼結体において、亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素を含有する焼結体が高い焼結密度が達成できることを見出し、本発明を完成するに至った。
【００１０】
以下、本発明を詳細に説明する。
【００１１】
本発明のＩＴＯ焼結体は、亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素を含有する。これらの元素の含有量としては、焼結体全量に対して総含有量が５〜５０００ｐｐｍ、好ましくは１０〜５００ｐｐｍ、特に好ましくは、２０〜２００ｐｐｍである。添加量が５ｐｐｍ未満ではその効果が不十分であり、一方、５０００ｐｐｍをこえて加えてもその焼結密度向上の効果が飽和し、経済的ではない。
【００１２】
本発明におけるＩＴＯ焼結体中の錫の含有量は、酸化錫換算で１〜２０重量％、特に好ましくは２〜１５重量％である。
【００１３】
本発明のＩＴＯ焼結体の密度は真密度の９０％〜１００％、このＩＴＯ焼結体をスパッタリングターゲットとして用いて得られた膜の比抵抗は、１×１０-3Ωｃｍ以下、特に５×１０-5〜７×１０-4Ωｃｍとなる。このような低抵抗な膜が得られるのは、焼結体の抵抗が低いため、消費電力が少なく、低い電圧で放電が可能となり、プラズマ中で発生する負イオンによる膜へのダメージが少なくなるからである。
【００１４】
また本発明のＩＴＯ焼結体は焼結粒径が１〜２０μｍであり、特に２〜２０μｍである。従来のＩＴＯ焼結体の焼結粒径は、ホットプレスでは１μｍ未満、酸素中加圧高温焼結では３０μｍ以上である。焼結粒径が１μｍ未満の小さい焼結体では成膜速度が遅く、焼結体強度が弱いため、スパッタ中に割れたり、焼結体が欠けたりして粒状物が膜に飛散るという問題を有している。一方、焼結粒径が２０μｍをこえる焼結体は耐衝撃性が小さいため割れ易く、さらに熱膨張係数が大きいため、スパッタ中にボンディング面からはく離したり、割れたりし易い。
次に、本発明の焼結体の製造方法に関し、その一例を例示する。
【００１５】
本発明のＩＴＯ焼結体は、酸化インジウム、酸化錫と、亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素の化合物、例えば酸化物、塩等を混合、成型、焼結することによって製造することができる。酸化インジウム、酸化錫および上記の元素を含有する化合物の混合方法は、特に限定しないが、例えば酸化インジウム、酸化錫と該化合物とを混合後、熱処理すればよい。なお、本発明は、酸化インジウムおよび／または酸化錫中に亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素を不純物として含有している場合を除くものではない。
【００１６】
他の方法として、インジウムおよび／または錫と該化合物との前駆体を共沈法等によって得た後、熱処理する方法を例示することができる。
【００１７】
酸化インジウム、酸化錫と亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素とは混合状態でも、結合状態でもよいが、特に亜鉛、銅、アンチモンは、酸化錫と結合状態であることが好ましく、また、チタン、ツリウム、リチウム、マグネシウムは、酸化インジウムと結合状態であることが好ましい。結合状態とは、例えば固溶状態等が例示でき、例えば酸化インジウムおよび／または酸化錫とこれら元素の化合物を６００℃〜１８００℃で熱処理することにより達成される。
【００１８】
即ち、本発明では、亜鉛、銅、アンチモンは酸化錫に固溶させた後、酸化インジウムと混合し、ＩＴＯとすることが好ましく、チタン、ツリウム、リチウム、マグネシウムは酸化インジウムに固溶させた後、酸化錫と混合し、ＩＴＯとすることが好ましい。
【００１９】
酸化インジウム、酸化錫に対するこれら元素の固溶量は、最終的に得られるＩＴＯ焼結体中の含有量がが５〜５０００ｐｐｍになるよう調整する。
【００２０】
用いる酸化インジウムは特に限定されないが、焼結性に優れた微細で均一な酸化インジウムであることが好ましい。例えば酸化インジウム粉末のＢＥＴ表面積は１０ｍ2／ｇ以上であることが好ましい。
【００２１】
一方、用いる酸化錫は表面積が小さいことが好ましく、ＢＥＴ表面積が３ｍ2／ｇ以下、特に１ｍ2／ｇ以下であることが好ましい。
【００２２】
酸化インジウム粉末、酸化錫粉末および亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素からなる化合物の混合方法は特に限定されず、ジルコニア、ウレタン樹脂等のボールを用いたボールミル、振動ミル、或いはＶ型ブレンダー、らいかい機等の湿式或いは乾式の混合方法が例示される。
【００２３】
次に粉末を成型するが、成型方法は、目的とした形状に合った成型方法を選べばよく、金型成型法、鋳込み成型法等が挙げられるが特に限定されない。
【００２４】
焼結体の高密度化のために、成型体は冷間静水圧プレスにて加圧処理することが好ましい。その時の圧力は３〜５ｔ／ｃｍ2程度でよく、必要に応じて処理を２〜５回繰り返してもよい。
【００２５】
得られた成型体は１２５０〜１６００℃、特に好ましくは１３５０〜１５００℃の温度で焼結する。焼結温度が１２５０℃未満の場合、密度が９０％未満のＩＴＯ焼結体が得られたり、また、焼結温度が１６００℃を越える場合、焼結体粒子の異常な成長が生じることがある。焼結時間は数時間〜数十時間、特に１０時間から３０時間で十分である。焼結雰囲気は特に限定されず、大気中、酸素中、不活性ガス中等で行えばよい。
【００２６】
【発明の効果】
以上の説明から明らかなように、本発明の亜鉛、銅、アンチモン、チタン、ツリウム、リチウム、マグネシウムから選ばれた１種以上の元素を含有するＩＴＯ焼結体からなるスパッタリングターゲットは、加熱された高温基板においても加熱されていない低温基板においても極めて低抵抗で高透明な透明導電膜を与え、なおかつ、その成膜速度が速く、ターゲット表面の粒状生成物もなく、ターゲットの割れ、ターゲットからの破損粒子の飛散りもなく、極めて生産性に優れている。
【００２７】
【実施例】
以下、実施例により本発明を更に具体的に説明するが、本発明はこれに限定されるものではない。
【００２８】
実施例１
ＢＥＴ表面積１ｍ2／ｇの酸化錫と亜鉛、銅、アンチモンの各元素の酸化物とをそれぞれ混合後、大気中で加熱し、酸化錫にこれら元素を固溶させた。これら元素を含有した酸化錫と酸化インジウムとをさらに混合し、得られた混合粉末を金型プレスした後、３ｔｏｎ／ｃｍ2で静水圧プレス処理し、酸素中、１５００℃で２４時間焼結し、ＩＴＯ焼結体を得た（酸化インジウム／酸化錫＝約９０／１０（重量比）、焼結粒径＝９μｍ）。なお、亜鉛、銅、アンチモンの添加量は、最終生成物であるＩＴＯ焼結体中の各元素の含有量が５０ｐｐｍ、１００ｐｐｍ、５００ｐｐｍとなるようにした。これらの焼結体の物性を表１に示す。
【００２９】
続いて、得られた焼結体をターゲットとして用い、表３に示すスパッタ条件にて、スパッタリング成膜した結果をあわせて表１に示す。
【００３０】
実施例２
ＢＥＴ表面積２０ｍ2／ｇの酸化インジウムとチタン、ツリウム、リチウム、マグネシウムの各元素の酸化物とをそれぞれ混合後、大気中で加熱し、酸化インジウムのこれら元素を固溶させた。これら元素を含有した酸化インジウムと酸化錫とをさらに混合し、得られた混合粉末を金型プレスした後、３ｔｏｎ／ｃｍ2で静水圧プレス処理し、酸素中、１５００℃で２４時間焼結し、ＩＴＯ焼結体を得た（酸化インジウム／酸化錫＝約９０／１０（重量比）、焼結粒径＝８μｍ）。なお、各元素の添加量は、実施例１と同様に設定した。これらの焼結体の物性を表２に示す。
【００３１】
続いて、得られた焼結体をターゲットとして用い、実施例１と同様のスパッタ条件にて、スパッタリング成膜した結果をあわせて表２に示す。
【００３２】
比較例
ＢＥＴ表面積２０ｍ2／ｇの酸化インジウムとＢＥＴ表面積１ｍ2／ｇの酸化錫とを混合し、得られた混合粉末を金型プレスした後、３ｔｏｎ／ｃｍ2で静水圧プレス処理し、酸素中、１５００℃で２４時間焼結し、ＩＴＯ焼結体を得た （酸化インジウム／酸化錫＝約９０／１０（重量比）、焼結粒径＝７μｍ）。この物性を表２に示す。
【００３３】
続いて、得られた焼結体をターゲットとして用い、実施例１と同様のスパッタ条件にて、スパッタリング成膜した結果をあわせて表２に示す。
【００３４】
【表１】
【表２】
【表３】
[Industrial application fields]
The present invention relates to an ITO sintered body excellent as a sputtering target.
[0002]
[Prior art]
With the development of display devices centering on liquid crystals, the demand for transparent conductive films is increasing, and transparent conductive films are widely used in terms of low resistance and high transparency. ing. As a method for forming the ITO transparent conductive film, a sputtering method is generally used from the viewpoint of easy operability, and a sputtering method using a target made of an ITO sintered body is widely applied. In recent years, in particular, along with the colorization of liquid crystals, the miniaturization of elements, and the adoption of the active matrix method, a high-performance ITO transparent conductive film is required.
[0003]
Usually, the ITO sintered body is manufactured by press-molding a mixed powder (ITO powder) of indium oxide powder and tin oxide powder and then sintering.
[0004]
Preparation of indium oxide powder or tin oxide powder used as raw material for ITO sintered body can be achieved by thermally decomposing each metal hydroxide, organic metal salt, inorganic metal salt, sol, gel, etc. As a preparation method, a product obtained by coprecipitation by adding a precipitation-forming agent to a homogeneous mixed solution of indium and tin (for example, JP-A-62-2627, JP-A-60-186416, etc.) or water A method for producing a product produced by decomposition (for example, JP-A-58-36925) by thermal decomposition is known.
[0005]
However, the density of the sintered body obtained from the raw material powder obtained by such a method cannot yet have a sufficient density, and is the theoretical density of the ITO sintered body (containing 10% tin oxide). It was about 65% of 7.15 g / cm 3 (˜4.65 g / cm 3 ). Such a low-density ITO sintered body has poor electrical conductivity, low thermal conductivity, and low bending strength. Therefore, when it is used as a sputtering target, high-performance ITO excellent in electrical conductivity and light transmittance. In addition to being extremely difficult to form a film, there was a problem that sputter operability was poor such as generation of nodules due to reduction of the target surface and a slow film formation rate.
[0006]
In order to solve such problems, various methods for obtaining a high-density ITO sintered body have been studied, and as an example, a method of adding Si, Ge, etc. as a sintering aid to the ITO sintered body has been proposed. (For example, Japanese Patent Application Laid-Open No. 61-136954).
[0007]
However, in order to obtain a high-density sintered body, it is necessary to increase the addition amount of Si, Ge, etc., and in a transparent conductive film obtained from a sputtering tageget made of such a sintered body. In this case, Si and Ge were mixed, and it was difficult to obtain a low resistance film.
[0008]
[Problems to be solved by the invention]
Therefore, an ITO sintered body that can provide an ITO film excellent in conductivity and light transmittance and has no problems of nodule generation due to reduction of the target surface, cracking of the target, and scattering of broken fine particles from the target. Was desired.
[0009]
[Means for Solving the Problems]
As a result of intensive studies in view of the present situation as described above, the present inventors have selected 1 selected from zinc, copper, antimony, titanium, thulium, lithium and magnesium in a sintered body made of indium oxide and tin oxide. The present inventors have found that a sintered body containing elements of more than seeds can achieve a high sintered density, and have completed the present invention.
[0010]
Hereinafter, the present invention will be described in detail.
[0011]
The ITO sintered body of the present invention contains one or more elements selected from zinc, copper, antimony, titanium, thulium, lithium, and magnesium. The content of these elements is 5 to 5000 ppm, preferably 10 to 500 ppm, particularly preferably 20 to 200 ppm, based on the total amount of the sintered body. If the addition amount is less than 5 ppm, the effect is insufficient. On the other hand, if the addition amount exceeds 5000 ppm, the effect of improving the sintered density is saturated, which is not economical.
[0012]
The content of tin in the ITO sintered body in the present invention is 1 to 20% by weight, particularly preferably 2 to 15% by weight in terms of tin oxide.
[0013]
The density of the ITO sintered body of the present invention is 90% to 100% of the true density, and the specific resistance of the film obtained using this ITO sintered body as a sputtering target is 1 × 10 −3 Ωcm or less, particularly 5 × 10 −5 to 7 × 10 −4 Ωcm. The reason why such a low-resistance film is obtained is that the sintered body has low resistance, so that power consumption is low, discharge is possible at a low voltage, and damage to the film due to negative ions generated in the plasma is reduced. Because.
[0014]
The ITO sintered body of the present invention has a sintered particle size of 1 to 20 μm, particularly 2 to 20 μm. The sintered particle size of the conventional ITO sintered body is less than 1 μm in the hot press, and 30 μm or more in the pressurized high temperature sintering in oxygen. A small sintered body with a sintered particle size of less than 1 μm has a slow film formation speed and a weak sintered body, so that the granular material is scattered in the film due to cracking during sputtering or chipping of the sintered body. have. On the other hand, a sintered body having a sintered particle size exceeding 20 μm is easily cracked due to its low impact resistance, and further has a large thermal expansion coefficient, so that it is easily peeled off from the bonding surface during sputtering or cracked.
Next, an example of the method for producing a sintered body of the present invention will be illustrated.
[0015]
The ITO sintered body of the present invention is a mixture of indium oxide, tin oxide, and a compound of one or more elements selected from zinc, copper, antimony, titanium, thulium, lithium, magnesium, such as oxides and salts, It can be manufactured by molding and sintering. A method for mixing indium oxide, tin oxide and the compound containing the above element is not particularly limited. For example, indium oxide, tin oxide and the compound may be mixed and then heat-treated. The present invention does not exclude the case where indium oxide and / or tin oxide contains one or more elements selected from zinc, copper, antimony, titanium, thulium, lithium, and magnesium as impurities. .
[0016]
As another method, a method in which a precursor of indium and / or tin and the compound is obtained by a coprecipitation method or the like and then heat-treated can be exemplified.
[0017]
One or more elements selected from indium oxide, tin oxide and zinc, copper, antimony, titanium, thulium, lithium and magnesium may be in a mixed state or in a combined state. In particular, zinc, copper and antimony are tin oxides. In addition, titanium, thulium, lithium, and magnesium are preferably in a bonded state with indium oxide. Examples of the bonded state include, for example, a solid solution state, and can be achieved by, for example, heat-treating indium oxide and / or tin oxide and a compound of these elements at 600 ° C. to 1800 ° C.
[0018]
That is, in the present invention, zinc, copper and antimony are dissolved in tin oxide and then mixed with indium oxide to form ITO, and titanium, thulium, lithium and magnesium are preferably dissolved in indium oxide. It is preferable to mix with tin oxide to make ITO.
[0019]
The solid solution amount of these elements with respect to indium oxide and tin oxide is adjusted so that the content in the finally obtained ITO sintered body is 5 to 5000 ppm.
[0020]
The indium oxide used is not particularly limited, but is preferably fine and uniform indium oxide having excellent sinterability. For example, the BET surface area of the indium oxide powder is preferably 10 m 2 / g or more.
[0021]
On the other hand, the tin oxide used preferably has a small surface area, and preferably has a BET surface area of 3 m 2 / g or less, particularly 1 m 2 / g or less.
[0022]
The mixing method of the compound consisting of one or more elements selected from indium oxide powder, tin oxide powder and zinc, copper, antimony, titanium, thulium, lithium and magnesium is not particularly limited, and balls such as zirconia and urethane resin are used. Examples thereof include a wet or dry mixing method such as a ball mill, a vibration mill, a V-type blender or a raking machine.
[0023]
Next, the powder is molded. As the molding method, a molding method suitable for the intended shape may be selected, and examples thereof include a mold molding method and a casting molding method, but are not particularly limited.
[0024]
In order to increase the density of the sintered body, the molded body is preferably subjected to pressure treatment with a cold isostatic press. The pressure at that time may be about 3 to 5 t / cm 2 , and the treatment may be repeated 2 to 5 times as necessary.
[0025]
The obtained molded body is sintered at a temperature of 1250 to 1600 ° C., particularly preferably 1350 to 1500 ° C. When the sintering temperature is less than 1250 ° C., an ITO sintered body with a density of less than 90% can be obtained, and when the sintering temperature exceeds 1600 ° C., abnormal growth of the sintered body particles may occur. . The sintering time is sufficient from several hours to several tens of hours, particularly from 10 hours to 30 hours. The sintering atmosphere is not particularly limited, and may be performed in air, oxygen, inert gas, or the like.
[0026]
【The invention's effect】
As is clear from the above description, the sputtering target made of an ITO sintered body containing one or more elements selected from zinc, copper, antimony, titanium, thulium, lithium, and magnesium of the present invention was heated. Even a high temperature substrate or an unheated low temperature substrate gives a highly transparent transparent conductive film with a very low resistance, and the film formation speed is fast, there is no granular product on the target surface, the target cracks, There is no scattering of damaged particles, and it is extremely productive.
[0027]
【Example】
EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.
[0028]
Example 1
A tin oxide having a BET surface area of 1 m 2 / g and an oxide of each element of zinc, copper, and antimony were mixed, and then heated in the atmosphere to dissolve these elements in tin oxide. Tin oxide and indium oxide containing these elements are further mixed, and the obtained mixed powder is press-molded and then hydrostatically pressed at 3 ton / cm 2 and sintered in oxygen at 1500 ° C. for 24 hours. An ITO sintered body was obtained (indium oxide / tin oxide = about 90/10 (weight ratio), sintered particle size = 9 μm). In addition, the addition amount of zinc, copper, and antimony was set so that the content of each element in the ITO sintered body as the final product was 50 ppm, 100 ppm, and 500 ppm. Table 1 shows the physical properties of these sintered bodies.
[0029]
Subsequently, Table 1 shows the results of sputtering film formation under the sputtering conditions shown in Table 3 using the obtained sintered body as a target.
[0030]
Example 2
Indium oxide having a BET surface area of 20 m 2 / g and oxides of each element of titanium, thulium, lithium, and magnesium were mixed and then heated in the atmosphere to dissolve these elements of indium oxide. Indium oxide and tin oxide containing these elements are further mixed, and the obtained mixed powder is press-molded and then hydrostatically pressed at 3 ton / cm 2 and sintered in oxygen at 1500 ° C. for 24 hours. An ITO sintered body was obtained (indium oxide / tin oxide = about 90/10 (weight ratio), sintered particle size = 8 μm). In addition, the addition amount of each element was set similarly to Example 1. Table 2 shows the physical properties of these sintered bodies.
[0031]
Next, Table 2 shows the results of sputtering film formation under the same sputtering conditions as in Example 1 using the obtained sintered body as a target.
[0032]
A tin oxide indium oxide and BET surface area of 1 m 2 / g of Comparative Example BET surface area of 20 m 2 / g were mixed, mixed powder thus obtained was mold press, hydrostatic pressing at 3 ton / cm 2, oxygen Medium was sintered at 1500 ° C. for 24 hours to obtain an ITO sintered body (indium oxide / tin oxide = about 90/10 (weight ratio), sintered particle size = 7 μm). The physical properties are shown in Table 2.
[0033]
Next, Table 2 shows the results of sputtering film formation under the same sputtering conditions as in Example 1 using the obtained sintered body as a target.
[0034]
[Table 1]
[Table 2]
[Table 3]
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19938893A JP3827334B2 (en) | 1993-08-11 | 1993-08-11 | ITO sintered body and sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19938893A JP3827334B2 (en) | 1993-08-11 | 1993-08-11 | ITO sintered body and sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0754132A JPH0754132A (en) | 1995-02-28 |
| JP3827334B2 true JP3827334B2 (en) | 2006-09-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19938893A Expired - Fee Related JP3827334B2 (en) | 1993-08-11 | 1993-08-11 | ITO sintered body and sputtering target |
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| Country | Link |
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| JP (1) | JP3827334B2 (en) |
Cited By (3)
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| US8252206B2 (en) | 2007-06-26 | 2012-08-28 | Jx Nippon Mining & Metals Corporation | Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide |
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- 1993-08-11 JP JP19938893A patent/JP3827334B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| JPH0754132A (en) | 1995-02-28 |
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