JP3496239B2 - ITO sintered body and sputtering target - Google Patents
ITO sintered body and sputtering targetInfo
- Publication number
- JP3496239B2 JP3496239B2 JP19593293A JP19593293A JP3496239B2 JP 3496239 B2 JP3496239 B2 JP 3496239B2 JP 19593293 A JP19593293 A JP 19593293A JP 19593293 A JP19593293 A JP 19593293A JP 3496239 B2 JP3496239 B2 JP 3496239B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- ito
- manganese
- tin oxide
- indium oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、スパッタリングターゲ
ットとして優れたＩＴＯ焼結体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ITO sintered body excellent as a sputtering target.
【０００２】[0002]
【従来の技術】液晶を中心とする表示デバイスの発展に
伴い、透明導電膜の需要が増加しているなか、透明導電
膜は低抵抗、高透明性という点でＩＴＯ（酸化インジウ
ム、酸化錫）膜が広く用いられている。ＩＴＯ透明導電
膜の形成方法としては操作性の簡便さという点からスパ
ッタリング法が一般的であり、ＩＴＯ焼結体からなるタ
ーゲットを用いたスパッタリング法が広く適用されてい
る。特に最近では液晶のカラー化、素子の微細化、アク
ティブマトリックス方式の採用に伴い、高性能なＩＴＯ
透明導電膜が要求されている。2. Description of the Related Art With the development of display devices centering on liquid crystals, the demand for transparent conductive films is increasing, and the transparent conductive films have low resistance and high transparency. Membranes are widely used. As a method for forming the ITO transparent conductive film, a sputtering method is generally used from the viewpoint of operability and a sputtering method using a target made of an ITO sintered body is widely applied. In particular, in recent years, due to the colorization of liquid crystals, the miniaturization of elements, and the adoption of active matrix systems, high-performance ITO
A transparent conductive film is required.
【０００３】通常、ＩＴＯ焼結体は、酸化インジウム粉
末と酸化錫粉末の混合粉末（ＩＴＯ粉末）を加圧成型
後、焼結して製造されている。Usually, an ITO sintered body is manufactured by press-molding a mixed powder of indium oxide powder and tin oxide powder (ITO powder) and sintering the mixture.
【０００４】ＩＴＯ焼結体の原料として用いる酸化イン
ジウム粉末または酸化錫粉末の調製は、各々の金属水酸
化物、有機金属塩、無機金属塩やゾル、ゲル等を熱分解
したり、また、直接ＩＴＯ粉末を調製する方法として
は、インジウムと錫との均一混合溶液に沈殿形成剤を添
加して共沈させた生成物（例えば、特開昭６２−７６２
７、特開昭６０−１８６４１６号公報等）や加水分解に
より生成した生成物（例えば、特開昭５８−３６９２５
号公報等）を加熱分解して製造する方法等が知られてい
る。The indium oxide powder or tin oxide powder used as a raw material for the ITO sintered body is prepared by thermally decomposing each metal hydroxide, organic metal salt, inorganic metal salt, sol, gel, or the like. As a method for preparing the ITO powder, a product obtained by adding a precipitation forming agent to a homogeneous mixed solution of indium and tin and coprecipitating the mixture (see, for example, JP-A-62-762).
7, JP-A-60-186416, etc.) and products produced by hydrolysis (for example, JP-A-58-36925).
(Patent publications, etc.) and the like are known.
【０００５】しかし、このような方法で得られた原料粉
末から得られた焼結体の密度は、いまだ十分な密度を有
することができず、ＩＴＯ焼結体（酸化錫１０％含有）
の理論密度である７．１５ｇ／ｃｍ3の６５％程度のも
の（〜４．６５ｇ／ｃｍ3）であった。このような密度
の低いＩＴＯ焼結体は、導電性が悪く、熱伝導性、抗折
力が低いため、これをスパッタリングターゲットとして
使用した場合、導電性、光透過性に優れた高性能なＩＴ
Ｏ膜の成膜が極めて困難であったばかりか、ターゲット
表面の還元によるノジュールの発生、成膜速度が遅い等
スパッタ操作性が悪いという問題点を有していた。However, the density of the sintered body obtained from the raw material powder obtained by such a method cannot yet have a sufficient density, and the ITO sintered body (containing 10% tin oxide)
Was about 65% of the theoretical density of 7.15 g / cm 3 (up to 4.65 g / cm 3 ). Such an ITO sintered body having a low density has poor electrical conductivity, low thermal conductivity, and low transverse rupture strength. Therefore, when it is used as a sputtering target, it is a high-performance IT excellent in electrical conductivity and light transmittance.
Not only is it extremely difficult to form an O film, but there are also problems such as the generation of nodules due to the reduction of the target surface and the poor sputtering operability such as a low film formation rate.
【０００６】このような問題を解決するために、高密度
なＩＴＯ焼結体を得る方法が種々検討され、その一例と
して、ＩＴＯ焼結体に焼結助剤としてＳｉ、Ｇｅ等を添
加する方法が提案されている（例えば、特開昭６１−１
３６９５４号公報）。In order to solve such a problem, various methods for obtaining a high density ITO sintered body have been studied, and as an example, a method of adding Si, Ge or the like as a sintering aid to the ITO sintered body. Has been proposed (for example, JP-A-61-1).
36954).
【０００７】しかしながら、高密度な焼結体を得るため
には、Ｓｉ、Ｇｅ等の添加量を多くする必要があり、ま
た、このような焼結体からなるスパッタリングターゲッ
トから得られた透明導電膜中には、Ｓｉ、Ｇｅが混入
し、低抵抗な膜を得ることが難しかった。However, in order to obtain a high density sintered body, it is necessary to increase the amount of Si, Ge, etc. added, and a transparent conductive film obtained from a sputtering target made of such a sintered body. It was difficult to obtain a low-resistance film because Si and Ge were mixed therein.
【０００８】[0008]
【発明が解決しようとする課題】したがって、導電性、
光透過性に優れたＩＴＯ膜を与えることができ、ターゲ
ット表面の還元によるノジュールの発生や、ターゲット
の割れ、ターゲットからの破損微粒物の飛散りの問題が
ないＩＴＯ焼結体が望まれていた。Therefore, the conductivity,
An ITO sintered body that can provide an ITO film having excellent light transmittance and is free from the problems of generation of nodules due to reduction of the target surface, cracking of the target, and scattering of broken fine particles from the target has been desired. .
【０００９】[0009]
【課題を解決するための手段】本発明者らは、上記のよ
うな現状に鑑み鋭意検討を重ねた結果、酸化インジウム
および酸化錫からなる焼結体において、マンガンを含有
する焼結体が、極めて高い焼結密度を達成できることを
見出し、本発明を完成するに至った。Means for Solving the Problems As a result of intensive studies conducted by the present inventors in view of the above-mentioned situation, as a result of the sintering of indium oxide and tin oxide, the sintered body containing manganese is They have found that an extremely high sintered density can be achieved, and have completed the present invention.
【００１０】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【００１１】本発明のＩＴＯ焼結体はマンガンを含有す
る。マンガンの含有量としては、焼結体全量に対して５
〜５０００ｐｐｍ、好ましくは１０〜５００ｐｐｍ、特
に好ましくは５０〜２００ｐｐｍである。添加量が５ｐ
ｐｍ未満では、マンガンを含有させる効果が不十分であ
り、一方、５０００ｐｐｍを越えて加えてもその焼結密
度向上の効果が飽和し、経済的ではない。The ITO sintered body of the present invention contains manganese. The content of manganese is 5 with respect to the total amount of the sintered body.
˜5000 ppm, preferably 10 to 500 ppm, particularly preferably 50 to 200 ppm. Addition amount is 5p
If it is less than pm, the effect of containing manganese is insufficient, while if it exceeds 5000 ppm, the effect of improving the sintered density is saturated, which is not economical.
【００１２】本発明におけるＩＴＯ焼結体中の錫の含有
量は、酸化錫換算で１〜２０重量％、特に好ましくは２
〜１５重量％である。The content of tin in the ITO sintered body according to the present invention is 1 to 20% by weight in terms of tin oxide, and particularly preferably 2
~ 15% by weight.
【００１３】本発明のＩＴＯ焼結体の密度は真密度の９
０％〜１００％、このＩＴＯ焼結体をスパッタリングタ
ーゲットとして用いて得られた膜の比抵抗は、１×１０
-3Ωｃｍ以下、特に５×１０-5〜７×１０-4Ωｃｍとな
る。このように低抵抗な膜が得られるのは、焼結体の抵
抗が低いため、消費電力が少なく、低い電圧で放電が可
能となり、プラズマ中で発生する負イオンによる膜への
ダメージが少なくなるからである。The density of the ITO sintered body of the present invention is 9 which is the true density.
0% to 100%, the specific resistance of the film obtained by using this ITO sintered body as a sputtering target is 1 × 10
-3 Ωcm or less, particularly 5 × 10 -5 to 7 × 10 -4 Ωcm. The reason why such a low resistance film is obtained is that the resistance of the sintered body is low, so that the power consumption is low, discharge is possible at a low voltage, and the damage to the film by negative ions generated in plasma is reduced. Because.
【００１４】また本発明のＩＴＯ焼結体は焼結粒径が１
〜２０μｍであり、特に２〜２０μｍである。従来のＩ
ＴＯ焼結体の焼結粒径は、ホットプレスでは１μｍ未
満、酸素中加圧高温焼結では３０μｍ以上である。焼結
粒径が１μｍ未満の小さい焼結体では成膜速度が遅く、
焼結体強度が弱いため、スパッタ中に割れたり、焼結体
が欠けたりして粒状物が膜に飛散るという問題を有して
いる。一方、焼結粒径が２０μｍをこえる焼結体は耐衝
撃性が小さいため割れ易く、さらに熱膨張係数が大きい
ため、スパッタ中にボンディング面からはく離したり、
割れたりし易い。次に、本発明の焼結体の製造方法に関
し、その一例を例示する。The ITO sintered body of the present invention has a sintered grain size of 1
˜20 μm, especially 2 to 20 μm. Conventional I
The sintered grain size of the TO sintered body is less than 1 μm in hot pressing and 30 μm or more in pressurized high temperature sintering in oxygen. When the sintered particle size is less than 1 μm, the film formation rate is slow,
Since the strength of the sintered body is weak, there is a problem that cracks occur during sputtering or the sintered body is chipped and particles are scattered on the film. On the other hand, a sintered body having a sintered particle size of more than 20 μm has small impact resistance and is easily cracked, and has a large thermal expansion coefficient, so that it may be peeled off from the bonding surface during sputtering.
Easy to crack. Next, an example of the method for producing a sintered body of the present invention will be illustrated.
【００１５】本発明のＩＴＯ焼結体は、酸化インジウ
ム、酸化錫と、マンガン化合物、例えば酸化物、塩等を
混合、成型、焼結することによって製造することができ
る。酸化インジウム、酸化錫およびマンガン化合物の混
合方法は、特に限定しないが、例えば酸化インジウム、
酸化錫とマンガンの化合物とを混合後、熱処理すればよ
い。なお、本発明は、酸化インジウムおよび／または酸
化錫中にマンガンを不純物として含有している場合を除
くものではない。The ITO sintered body of the present invention can be produced by mixing, molding and sintering indium oxide, tin oxide and a manganese compound such as oxide and salt. The mixing method of the indium oxide, tin oxide and manganese compounds is not particularly limited, but for example, indium oxide,
Heat treatment may be performed after mixing the tin oxide and the manganese compound. The present invention does not exclude the case where indium oxide and / or tin oxide contains manganese as an impurity.
【００１６】他の方法として、インジウム及び／又は錫
とマンガン化合物との前駆体を共沈法等によって得た
後、熱処理する方法を例示することができる。As another method, a method in which a precursor of indium and / or tin and a manganese compound is obtained by a coprecipitation method or the like and then heat-treated can be exemplified.
【００１７】酸化インジウム、酸化錫とマンガンは混合
状態でも、結合状態でも良いが、特に結合状態であるこ
とが好ましい。結合状態とは、例えば固溶状態等が例示
でき、例えば酸化インジウムおよび／または酸化錫とマ
ンガン化合物とを６００℃〜１８００℃で熱処理するこ
とにより達成される。特にマンガン化合物と酸化錫とを
固溶させることが好ましい。Indium oxide, tin oxide and manganese may be in a mixed state or in a combined state, but particularly preferably in a combined state. The bonded state can be, for example, a solid solution state or the like, and can be achieved, for example, by heat-treating indium oxide and / or tin oxide and a manganese compound at 600 ° C to 1800 ° C. Particularly, it is preferable to form a solid solution of the manganese compound and tin oxide.
【００１８】マンガンの固溶量は、最終的に得られるＩ
ＴＯ焼結体中の含有量が５〜５０００ｐｐｍになるよう
に調整する。The solid solution amount of manganese is the I obtained finally.
The content in the TO sintered body is adjusted to be 5 to 5000 ppm.
【００１９】用いる酸化インジウムは特に限定されない
が、焼結性に優れた微細で均一な酸化インジウムである
ことが好ましい。例えば酸化インジウム粉末のＢＥＴ表
面積は１０ｍ2／ｇ以上であることが好ましい。The indium oxide used is not particularly limited, but fine and uniform indium oxide excellent in sinterability is preferable. For example, the BET surface area of the indium oxide powder is preferably 10 m 2 / g or more.
【００２０】一方、用いる酸化錫は表面積が小さいこと
が好ましく、ＢＥＴ表面積が３ｍ2／ｇ以下、特に１ｍ2
／ｇ以下であることが好ましい。On the other hand, the tin oxide used preferably has a small surface area and has a BET surface area of 3 m 2 / g or less, particularly 1 m 2
/ G or less is preferable.
【００２１】酸化インジウム粉末、酸化錫粉末およびマ
ンガン化合物の混合方法は特に限定されず、ジルコニ
ア、ウレタン樹脂等のボールを用いたボールミル、振動
ミル、或いはＶ型ブレンダー、らいかい機等の湿式或い
は乾式の混合方法が例示される。The method of mixing the indium oxide powder, the tin oxide powder and the manganese compound is not particularly limited, and a wet or dry method such as a ball mill using a ball of zirconia, urethane resin or the like, a vibration mill, a V-type blender, a raider or the like. The mixing method is exemplified.
【００２２】次に粉末を成型するが、成型方法は、目的
とした形状に合った成型方法を選べばよく、金型成型
法、鋳込み成型法等が挙げられるが特に限定されない。Next, the powder is molded. As the molding method, a molding method suitable for the intended shape may be selected, and a mold molding method, a casting molding method, etc. may be mentioned, but the molding method is not particularly limited.
【００２３】焼結体の高密度化のために、成型体は冷間
静水圧プレスにて加圧処理することが好ましい。その時
の圧力は３〜５ｔ／ｃｍ2程度でよく、必要に応じて処
理を２〜５回繰り返してもよい。In order to increase the density of the sintered body, it is preferable that the molded body be subjected to pressure treatment with a cold isostatic press. The pressure at that time may be about 3 to 5 t / cm 2 , and the treatment may be repeated 2 to 5 times if necessary.
【００２４】得られた成型体は１２５０〜１６００℃、
特に好ましくは１３５０〜１５００℃の温度で焼結す
る。焼結温度が１２５０℃未満の場合、密度が９０％未
満のＩＴＯ焼結体が得られたり、また、焼結温度が１６
００℃を越える場合、焼結体粒子の異常な成長が生じる
ことがある。焼結時間は数時間〜数十時間、特に１０時
間から３０時間で十分である。焼結雰囲気は特に限定さ
れず、大気中、酸素中、不活性ガス中等で行えばよい。The obtained molded product was 1250 to 1600 ° C.,
Particularly preferably, sintering is performed at a temperature of 1350 to 1500 ° C. When the sintering temperature is less than 1250 ° C, an ITO sintered body having a density of less than 90% can be obtained, and the sintering temperature is 16%.
If the temperature exceeds 00 ° C, abnormal growth of sintered particles may occur. A sintering time of several hours to several tens of hours, particularly 10 to 30 hours is sufficient. The sintering atmosphere is not particularly limited, and may be performed in the air, oxygen, inert gas, or the like.
【００２５】[0025]
【発明の効果】以上の説明から明らかなように、本発明
のマンガンを含有するＩＴＯ焼結体からなるスパッタリ
ングターゲットは、加熱された高温基板においても加熱
されていない低温基板においても極めて低抵抗で高透明
な透明導電膜を与え、なおかつその成膜速度が速く、タ
ーゲット表面の粒状生成物もなく、ターゲットの割れ、
ターゲットからの破損粒子の飛散りもなく、極めて生産
性に優れている。As is apparent from the above description, the sputtering target made of the ITO sintered body containing manganese according to the present invention has extremely low resistance on both a heated high temperature substrate and an unheated low temperature substrate. A highly transparent transparent conductive film is provided, and the film formation speed is high, and there is no granular product on the target surface.
There is no scattering of damaged particles from the target, and it is extremely productive.
【００２６】[0026]
【実施例】以下、実施例により本発明を更に具体的に説
明するが、本発明はこれに限定されるものではない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto.
【００２７】実施例１
ＢＥＴ表面積１ｍ2／ｇの酸化錫と酸化マンガンとを混
合後、大気中、１５００℃で５時間加熱し、マンガンを
酸化錫に固溶させた。このマンガン含有酸化錫と酸化イ
ンジウムとをさらに混合し、得られた混合粉末を金型プ
レスした後、３ｔｏｎ／ｃｍ2で静水圧プレス処理し、
酸素中、１５００℃で２４時間焼結し、ＩＴＯ焼結体を
得た（酸化インジウム／酸化錫＝約９０／１０（重量
比）、焼結粒径＝８μｍ）。なお、酸化マンガンの添加
量は、最終生成物であるＩＴＯ焼結体中のマンガン含有
量が５０ｐｐｍ、１００ｐｐｍ、５００ｐｐｍとなるよ
うにした。これらの焼結体の物性を表１に示す。Example 1 After mixing tin oxide having a BET surface area of 1 m 2 / g and manganese oxide, the mixture was heated in the atmosphere at 1500 ° C. for 5 hours to dissolve manganese in tin oxide. The manganese-containing tin oxide and indium oxide were further mixed, and the obtained mixed powder was pressed with a mold, followed by hydrostatic pressing at 3 ton / cm 2 .
Sintering was performed in oxygen at 1500 ° C. for 24 hours to obtain an ITO sintered body (indium oxide / tin oxide = about 90/10 (weight ratio), sintered particle size = 8 μm). The amount of manganese oxide added was such that the manganese content in the final product, the ITO sintered body, was 50 ppm, 100 ppm, and 500 ppm. Table 1 shows the physical properties of these sintered bodies.
【００２８】続いて、得られた焼結体をターゲットとし
て用い、表２に示すスパッタ条件にて、スパッタリング
成膜した結果を表１にあわせて示す。Next, using the obtained sintered body as a target, the results of sputtering film formation under the sputtering conditions shown in Table 2 are also shown in Table 1.
【００２９】実施例２
ＢＥＴ表面積２０ｍ2／ｇの酸化インジウムと酸化マン
ガンとを混合後、大気中、７００℃で５時間加熱し、マ
ンガンを酸化インジウムに固溶させた。このマンガン含
有酸化インジウムと酸化錫とをさらに混合し、得られた
混合粉末を金型プレスした後、３ｔｏｎ／ｃｍ2で静水
圧プレス処理し、酸素中、１５００℃で２４時間焼結
し、ＩＴＯ焼結体を得た（酸化インジウム／酸化錫＝約
９０／１０（重量比）、焼結粒径＝１０μｍ）。なお、
酸化マンガンの添加量は、実施例１と同様になるよう設
定した。これらの焼結体の物性を表１に示す。Example 2 Indium oxide having a BET surface area of 20 m 2 / g and manganese oxide were mixed and then heated in air at 700 ° C. for 5 hours to dissolve manganese into indium oxide. The manganese-containing indium oxide and tin oxide were further mixed, and the obtained mixed powder was die-pressed, followed by isostatic pressing at 3 ton / cm 2 , and sintering in oxygen at 1500 ° C. for 24 hours. A sintered body was obtained (indium oxide / tin oxide = about 90/10 (weight ratio), sintered particle size = 10 μm). In addition,
The amount of manganese oxide added was set to be the same as in Example 1. Table 1 shows the physical properties of these sintered bodies.
【００３０】続いて、得られた焼結体をターゲットとし
て用い、実施例１と同様のスパッタ条件にて、スパッタ
リング成膜した結果を表１にあわせて示す。Next, Table 1 shows the results of sputtering film formation under the same sputtering conditions as in Example 1, using the obtained sintered body as a target.
【００３１】比較例
ＢＥＴ表面積２０ｍ2／ｇの酸化インジウムとＢＥＴ表
面積１ｍ2／ｇの酸化錫とを混合し、得られた混合粉末
を金型プレスした後、３ｔｏｎ／ｃｍ2で静水圧プレス
処理し、酸素中、１５００℃で２４時間焼結し、ＩＴＯ
焼結体を得た （酸化インジウム／酸化錫＝約９０／１
０（重量比）、焼結粒径＝５μｍ）。この焼結体の物性
を表１に示す。The mixed oxide of tin indium oxide and BET surface area of 1 m 2 / g of Comparative Example BET surface area of 20 m 2 / g, after mixing powder obtained was mold press, hydrostatic press treatment at 3 ton / cm 2 And sinter in oxygen at 1500 ° C. for 24 hours
A sintered body was obtained (indium oxide / tin oxide = about 90/1
0 (weight ratio), sintered particle size = 5 μm). Table 1 shows the physical properties of this sintered body.
【００３２】続いて、得られた焼結体をターゲットとし
て用い、実施例１と同様のスパッタ条件にて、スパッタ
リング成膜した結果を表１にあわせて示す。Then, the results of sputtering film formation under the same sputtering conditions as in Example 1 using the obtained sintered body as a target are also shown in Table 1.
【００３３】[0033]
【表１】 [Table 1]
【００３４】[0034]
【表２】 [Table 2]
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 C04B 35/495 Front page continuation (58) Fields surveyed (Int.Cl. 7 , DB name) C23C 14/00-14/58 C04B 35/495
Claims (2)
ＴＯ焼結体において、マンガンを含有することを特徴と
する密度９０％〜１００％のＩＴＯ焼結体。1. I consisting of indium oxide and tin oxide
An ITO sintered body having a density of 90% to 100%, characterized by containing manganese in the TO sintered body.
るスパッタリングターゲット。2. A sputtering target made of the ITO sintered body according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19593293A JP3496239B2 (en) | 1993-08-06 | 1993-08-06 | ITO sintered body and sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19593293A JP3496239B2 (en) | 1993-08-06 | 1993-08-06 | ITO sintered body and sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0754135A JPH0754135A (en) | 1995-02-28 |
| JP3496239B2 true JP3496239B2 (en) | 2004-02-09 |
Family
ID=16349376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19593293A Expired - Fee Related JP3496239B2 (en) | 1993-08-06 | 1993-08-06 | ITO sintered body and sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3496239B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010035716A1 (en) | 2008-09-25 | 2010-04-01 | 日鉱金属株式会社 | Oxide sintered compact for producing transparent conductive film |
| US9028726B2 (en) | 2008-09-25 | 2015-05-12 | Jx Nippon Mining & Metals Corporation | Oxide sintered compact for producing transparent conductive film |
-
1993
- 1993-08-06 JP JP19593293A patent/JP3496239B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010035716A1 (en) | 2008-09-25 | 2010-04-01 | 日鉱金属株式会社 | Oxide sintered compact for producing transparent conductive film |
| US9028726B2 (en) | 2008-09-25 | 2015-05-12 | Jx Nippon Mining & Metals Corporation | Oxide sintered compact for producing transparent conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0754135A (en) | 1995-02-28 |
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