WO2009044893A1 - Indium oxide transparent conductive film and method for producing the same - Google Patents

Indium oxide transparent conductive film and method for producing the same Download PDF

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Publication number
WO2009044893A1
WO2009044893A1 PCT/JP2008/068102 JP2008068102W WO2009044893A1 WO 2009044893 A1 WO2009044893 A1 WO 2009044893A1 JP 2008068102 W JP2008068102 W JP 2008068102W WO 2009044893 A1 WO2009044893 A1 WO 2009044893A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent conductive
conductive film
indium oxide
producing
same
Prior art date
Application number
PCT/JP2008/068102
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2008550302A priority Critical patent/JPWO2009044893A1/en
Publication of WO2009044893A1 publication Critical patent/WO2009044893A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)

Abstract

Disclosed is a transparent conductive film which is formed as an amorphous film by using a sputtering target containing an oxide sintered body which contains indium oxide, and if necessary tin, while containing an additional element having an oxygen binding energy of 100-350 kJ/mol (excluding Ba, Mg and Y) in an amount of not less than 0.0001 mole but less than 0.10 mole per 1 mole of indium. The transparent conductive film contains indium oxide, and if necessary tin, while containing the additional element.
PCT/JP2008/068102 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same WO2009044893A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008550302A JPWO2009044893A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent conductive film and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007260436 2007-10-03
JP2007-260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044893A1 true WO2009044893A1 (en) 2009-04-09

Family

ID=40526308

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/JP2008/068098 WO2009044889A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068099 WO2009044890A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068097 WO2009044888A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068100 WO2009044891A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film
PCT/JP2008/068102 WO2009044893A1 (en) 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same
PCT/JP2008/068101 WO2009044892A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068098 WO2009044889A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068099 WO2009044890A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068097 WO2009044888A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068100 WO2009044891A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068101 WO2009044892A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film

Country Status (4)

Country Link
JP (6) JPWO2009044892A1 (en)
KR (6) KR20100063137A (en)
TW (6) TWI430956B (en)
WO (6) WO2009044889A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012051745A (en) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp Sintered oxide and oxide semiconductor thin film
JP2012051747A (en) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp Sintered oxide and oxide semiconductor thin film

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* Cited by examiner, † Cited by third party
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JP2011037679A (en) * 2009-08-13 2011-02-24 Tosoh Corp Multiple oxide sintered compact, sputtering target, multiple oxide amorphous film and production method thereof, and multiple oxide crystalline film and production method thereof
KR20140071502A (en) * 2009-11-19 2014-06-11 가부시키가이샤 아루박 Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film
CN102191465A (en) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 Indium-doped zinc oxide target material and preparation method of transparent conducting film
KR101198786B1 (en) 2010-06-30 2012-11-07 현대자동차주식회사 Variable compression ratio apparatus
JP5817327B2 (en) 2010-09-29 2015-11-18 東ソー株式会社 Oxide sintered body, method for producing the same, oxide transparent conductive film obtained using the same, and solar cell
WO2013084795A1 (en) * 2011-12-07 2013-06-13 東ソー株式会社 Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
JP5996227B2 (en) * 2012-03-26 2016-09-21 学校法人 龍谷大学 Oxide film and manufacturing method thereof
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys

Citations (12)

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JPH06157036A (en) * 1992-11-13 1994-06-03 Nippon Soda Co Ltd Production of tin-doped indium oxide film having high resistivity
JPH09175837A (en) * 1995-12-27 1997-07-08 Idemitsu Kosan Co Ltd Electrically conductive transparent film and its production
JPH1195239A (en) * 1997-09-25 1999-04-09 Toshiba Corp Production of liquid crystal display device
JP2000077358A (en) * 1998-08-27 2000-03-14 Asahi Glass Co Ltd Transparent conductive film, sputtering target and basic body with transparent conductive film
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film
JP2003105532A (en) * 2001-06-26 2003-04-09 Mitsui Mining & Smelting Co Ltd Sputtering target for highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film
JP2003178625A (en) * 2001-12-10 2003-06-27 Nitto Denko Corp Transparent conductive film having optical element function and its manufacturing method
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
JP2006134789A (en) * 2004-11-09 2006-05-25 Idemitsu Kosan Co Ltd Amorphous transparent conductive film, amorphous transparent conductive film layered product and manufacturing method thereof
JP2008038234A (en) * 2006-08-10 2008-02-21 Idemitsu Kosan Co Ltd Oxide target containing lanthanum oxide
JP2008174829A (en) * 2007-01-22 2008-07-31 Samsung Corning Co Ltd Ito target, method of manufacturing the ito target, and ito transparent electrode
JP2008195554A (en) * 2007-02-09 2008-08-28 Ulvac Material Kk Ito sintered compact, ito sputtering target and its manufacturing method

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US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
JP3366046B2 (en) * 1993-03-30 2003-01-14 旭硝子株式会社 Amorphous transparent conductive film
JP3827334B2 (en) * 1993-08-11 2006-09-27 東ソー株式会社 ITO sintered body and sputtering target
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JP4918737B2 (en) * 2001-03-23 2012-04-18 東ソー株式会社 Oxide sintered body and sputtering target
KR100744017B1 (en) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance
EP2280092A1 (en) * 2001-08-02 2011-02-02 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film, and their manufacturing method
JP4904645B2 (en) * 2001-08-10 2012-03-28 東ソー株式会社 Method for producing Mg-containing ITO sputtering target
JP4075361B2 (en) * 2001-11-27 2008-04-16 東ソー株式会社 Method for producing Mg-containing ITO sputtering target
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Publication number Priority date Publication date Assignee Title
JPH06157036A (en) * 1992-11-13 1994-06-03 Nippon Soda Co Ltd Production of tin-doped indium oxide film having high resistivity
JPH09175837A (en) * 1995-12-27 1997-07-08 Idemitsu Kosan Co Ltd Electrically conductive transparent film and its production
JPH1195239A (en) * 1997-09-25 1999-04-09 Toshiba Corp Production of liquid crystal display device
JP2000077358A (en) * 1998-08-27 2000-03-14 Asahi Glass Co Ltd Transparent conductive film, sputtering target and basic body with transparent conductive film
JP2003105532A (en) * 2001-06-26 2003-04-09 Mitsui Mining & Smelting Co Ltd Sputtering target for highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film
JP2003178625A (en) * 2001-12-10 2003-06-27 Nitto Denko Corp Transparent conductive film having optical element function and its manufacturing method
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
JP2006134789A (en) * 2004-11-09 2006-05-25 Idemitsu Kosan Co Ltd Amorphous transparent conductive film, amorphous transparent conductive film layered product and manufacturing method thereof
JP2008038234A (en) * 2006-08-10 2008-02-21 Idemitsu Kosan Co Ltd Oxide target containing lanthanum oxide
JP2008174829A (en) * 2007-01-22 2008-07-31 Samsung Corning Co Ltd Ito target, method of manufacturing the ito target, and ito transparent electrode
JP2008195554A (en) * 2007-02-09 2008-08-28 Ulvac Material Kk Ito sintered compact, ito sputtering target and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012051745A (en) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp Sintered oxide and oxide semiconductor thin film
JP2012051747A (en) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp Sintered oxide and oxide semiconductor thin film

Also Published As

Publication number Publication date
TW200926207A (en) 2009-06-16
JP5464319B2 (en) 2014-04-09
JPWO2009044890A1 (en) 2011-02-10
KR20100071090A (en) 2010-06-28
KR20100063137A (en) 2010-06-10
JPWO2009044891A1 (en) 2011-02-10
KR20100063136A (en) 2010-06-10
JP5237827B2 (en) 2013-07-17
TW200926209A (en) 2009-06-16
WO2009044891A1 (en) 2009-04-09
TWI461365B (en) 2014-11-21
TW200923115A (en) 2009-06-01
TWI430956B (en) 2014-03-21
WO2009044892A1 (en) 2009-04-09
KR20100067118A (en) 2010-06-18
TW200926208A (en) 2009-06-16
JPWO2009044893A1 (en) 2011-02-10
KR20100063135A (en) 2010-06-10
JPWO2009044892A1 (en) 2011-02-10
TW200927657A (en) 2009-07-01
JPWO2009044888A1 (en) 2011-02-10
JPWO2009044889A1 (en) 2011-02-10
WO2009044889A1 (en) 2009-04-09
WO2009044888A1 (en) 2009-04-09
TW200927658A (en) 2009-07-01
KR20100071089A (en) 2010-06-28
KR101200386B1 (en) 2012-11-12
WO2009044890A1 (en) 2009-04-09

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