JP3340782B2 - 薄膜半導体素子 - Google Patents

薄膜半導体素子

Info

Publication number: JP3340782B2
Authority: JP; Japan
Prior art keywords: layer; tft; drain; channel; source
Prior art date: 1993-03-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP05401993A

Other languages

English (en)

Japanese (ja)

Other versions

JPH06268217A (ja

Inventor

修一内古閑

幸治鈴木

卓也島野

加一福田

伸樹茨木

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-03-15

Filing date

1993-03-15

Publication date

2002-11-05

1993-03-15 Application filed by Toshiba Corp filed Critical Toshiba Corp

1993-03-15 Priority to JP05401993A priority Critical patent/JP3340782B2/ja

1994-03-15 Priority to KR1019940005079A priority patent/KR0168700B1/ko

1994-09-22 Publication of JPH06268217A publication Critical patent/JPH06268217A/ja

1995-08-11 Priority to US08/514,124 priority patent/US5614731A/en

2002-11-05 Application granted granted Critical

2002-11-05 Publication of JP3340782B2 publication Critical patent/JP3340782B2/ja

2017-11-05 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 35
239000010409 thin film Substances 0.000 title claims description 6
239000010410 layer Substances 0.000 claims description 90
239000011241 protective layer Substances 0.000 claims description 21
239000000758 substrate Substances 0.000 claims description 12
239000004973 liquid crystal related substance Substances 0.000 description 15
239000010408 film Substances 0.000 description 14
238000004519 manufacturing process Methods 0.000 description 12
238000000034 method Methods 0.000 description 12
239000011159 matrix material Substances 0.000 description 8
229910021417 amorphous silicon Inorganic materials 0.000 description 5
238000010586 diagram Methods 0.000 description 5
239000000463 material Substances 0.000 description 5
229910052581 Si3N4 Inorganic materials 0.000 description 4
238000005530 etching Methods 0.000 description 4
238000000059 patterning Methods 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
238000002955 isolation Methods 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
239000011651 chromium Substances 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000002542 deteriorative effect Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
-1 for example Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000001788 irregular Effects 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000002040 relaxant effect Effects 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
239000002356 single layer Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Thin Film Transistor (AREA)
Liquid Crystal (AREA)

JP05401993A 1993-03-15 1993-03-15 薄膜半導体素子 Expired - Lifetime JP3340782B2 (ja)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
JP05401993A JP3340782B2 (ja)	1993-03-15	1993-03-15	薄膜半導体素子
KR1019940005079A KR0168700B1 (ko)	1993-03-15	1994-03-15	박막반도체소자
US08/514,124 US5614731A (en)	1993-03-15	1995-08-11	Thin-film transistor element having a structure promoting reduction of light-induced leakage current

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP05401993A JP3340782B2 (ja)	1993-03-15	1993-03-15	薄膜半導体素子

Publications (2)

Publication Number	Publication Date
JPH06268217A JPH06268217A (ja)	1994-09-22
JP3340782B2 true JP3340782B2 (ja)	2002-11-05

Family

ID=12958881

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP05401993A Expired - Lifetime JP3340782B2 (ja)	1993-03-15	1993-03-15	薄膜半導体素子

Country Status (2)

Country	Link
JP (1)	JP3340782B2 (ko)
KR (1)	KR0168700B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3914753B2 (ja) *	2000-11-30	2007-05-16	Ｎｅｃ液晶テクノロジー株式会社	アクティブマトリクス型液晶表示装置およびスイッチング素子
CN101032027B (zh) *	2004-09-02	2010-10-13	卡西欧计算机株式会社	薄膜晶体管及其制造方法
JP2010113253A (ja) *	2008-11-07	2010-05-20	Hitachi Displays Ltd	表示装置及び表示装置の製造方法
WO2011027649A1 (en) *	2009-09-02	2011-03-10	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device including a transistor, and manufacturing method of semiconductor device

1993
- 1993-03-15 JP JP05401993A patent/JP3340782B2/ja not_active Expired - Lifetime
1994
- 1994-03-15 KR KR1019940005079A patent/KR0168700B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPH06268217A (ja)	1994-09-22
KR0168700B1 (ko)	1999-01-15
KR940022922A (ko)	1994-10-22

Legal Events

Date	Code	Title	Description
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2007-07-12	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20070816 Year of fee payment: 5
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