JP3219854U - Iii−v族窒化物半導体エピタキシャルウエハ及びiii−v族窒化物半導体デバイス - Google Patents
Iii−v族窒化物半導体エピタキシャルウエハ及びiii−v族窒化物半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000007704 transition Effects 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 62
- 238000004519 manufacturing process Methods 0.000 claims description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 238000010992 reflux Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 6
- 229910004541 SiN Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 148
- 235000012431 wafers Nutrition 0.000 description 46
- 229910002601 GaN Inorganic materials 0.000 description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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Abstract
Description
a)前記半導体媒質層の表面にフォトレジスト層を形成し、露光工程又はナノインプリント工程によって、前記フォトレジスト層を間隔を置いて配列される複数のフォトレジストブロックに形成する。
b)誘導結合プラズマエッチング法により、当該フォトレジストブロックの形状を前記半導体媒質層へ転写し、複数の半導体媒質突起を形成するとともに、各突起間に前記エピタキシャルバッファ層を露出させる。
c)前記フォトレジストブロックを除去する。
102 エピタキシャルバッファ層
103 半導体媒質層
104 フォトレジスト層
105 フォトレジストブロック
106 こぶ状のフォトレジストブロック
107 半導体媒質突起
108 エピタキシャルトランジション層
109 n型エピタキシャル層
110 発光層
111 p型エピタキシャル層
112 透明電流拡散層
113 n電極
114 p電極
Claims (21)
- 1)基板(101)と、
2)上面及び前記基板と接触する下面を備え、スパッタリング法によって50〜600オングストロームの厚さに形成された結晶方位(0001)の柱状多結晶AlN層からなるエピタキシャルバッファ層(102)と、
3)前記エピタキシャルバッファ層の上面に間隔を置いて配列されて当該エピタキシャルバッファ層と接触する突起であって、各突起の間にエピタキシャルバッファ層を露出させる複数の半導体媒質突起(107)と、
4)前記半導体媒質突起と、これらの間に露出するエピタキシャルバッファ層を覆い、前記露出するエピタキシャルバッファ層に接触するとともに前記半導体媒質突起と接触して、半導体媒質突起を完全に覆い、半導体媒質突起間のスペースを完全に充填するエピタキシャルトランジション層(108)と、
5)前記エピタキシャルトランジション層の上面に位置し、下から上に向かって、n型エピタキシャル層(109)、発光層(110)及びp型エピタキシャル層(111)を含むエピタキシャル有効層と、を含むIII−V族窒化物半導体エピタキシャルウエハ。 - 前記基板は、Al2O3、SiC、Si、ZnO及びGaNから選択された材料からなることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起の高さは0.2〜3μmであることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起は、SiO2、SiON及びSiNから選択された材料からなることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起は底部の幅が0.3〜4μmであり、間隔が0.1〜2μmであることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起は、底面及び少なくとも1つの側面を備え、前記底面と前記エピタキシャルバッファ層が接触するとともに、前記側面と前記エピタキシャルトランジション層が接触し、前記側面と前記底面が90度以下の夾角をなすことを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起が前記底面と平行な上面を備え、前記上面が、前記エピタキシャルトランジション層と接触するとともに、前記側面と90度以上の夾角をなすことを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記半導体媒質突起は、こぶ状、テーパー状及びピラミッド状から選択される形状を有することを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記エピタキシャルトランジション層の厚さは半導体媒質突起の高さよりも大きく、0.5〜10μmであることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記エピタキシャルトランジション層は、GaN、AlGaN、AlN、InGaN、InAlGaN及びこれらのn型又はp型ドーパントから選択された材料からなることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 前記エピタキシャルウエハは、n型GaN層、InGaN多量子井戸(MQW)発光層及びp型GaN層を含むことを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウエハ。
- 請求項1〜11のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウエハと、前記n型エピタキシャル層及び前記p型エピタキシャル層にそれぞれ電気接続されるn電極(113)及びp電極(114)を含むIII−V族窒化物半導体デバイス。
- 1)基板(101)を提供し、
2)前記基板上に結晶方位(0001)の柱状多結晶AlN層からなるエピタキシャルバッファ層(102)をスパッタリング法によって50〜600オングストロームの厚さに積層し、
3)前記エピタキシャルバッファ層上に半導体媒質(103)を積層し、前記半導体媒質層をパターニングすることで、間隔を置いて配列される複数の半導体媒質突起(107)を形成し、前記突起間に前記エピタキシャルバッファ層を露出させ、
4)前記エピタキシャルバッファ層の露出部分に、エピタキシャルトランジション層(108)の厚さが前記半導体媒質突起の高さよりも大きくなるまで当該エピタキシャルトランジション層を積層し、
5)前記エピタキシャルトランジション層の上面にエピタキシャル有効層を成長させ、前記エピタキシャル有効層が、下から上に向けて、n型エピタキシャル層(109)、発光層(110)、p型エピタキシャル層(111)を含むことを特徴とするIII−V族窒化物半導体エピタキシャルウエハの製造方法。 - 前記ステップ3)と前記ステップ4)の間に、前記ステップ3)で取得した基板をアニールすることで前記エピタキシャルバッファ層の露出部分に結晶核を形成するステップ3’)を更に含むことを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 前記基板は、Al2O3、SiC、Si、ZnO及びGaNから選択された材料からなることを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 前記半導体媒質突起は高さ0.2〜3μmであり、SiO2、SiN及びSiONから選択された材料からなることを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 前記エピタキシャルトランジション層は厚さ0.5〜10μmであり、GaN、AlGaN、AlN、InGaN、InAlGaN及びこれらのn型又はp型ドーパントから選択された材料からなることを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 前記半導体媒質層をパターニングすることで間隔を置いて配列される複数の半導体媒質突起を形成するステップは、
a)前記半導体媒質層の表面にフォトレジスト層を形成し、露光工程又はナノインプリント工程によって、前記フォトレジスト層を間隔を置いて配列される複数のフォトレジストブロックに形成するステップと、
b)誘導結合プラズマエッチング法により、フォトレジストブロックの形状を前記半導体媒質層へ転写し、複数の半導体媒質突起を形成するとともに、各突起間に前記エピタキシャルバッファ層を露出させるステップと、
c)前記フォトレジストブロックを除去するステップと、を含むことを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。 - 前記ステップa)と前記ステップb)の間に、加熱還流工程によって前記複数のフォトレジストブロックを複数のこぶ状のフォトレジストブロックとするよう還流させるステップa’)を更に含むことを特徴とする請求項18に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 前記エピタキシャルウエハは、n型GaN層、InGaN多量子井戸(MQW)発光層及びp型GaN層を含むことを特徴とする請求項13に記載のIII−V族窒化物半導体エピタキシャルウエハの製造方法。
- 請求項1〜11のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウエハ上に、前記n型エピタキシャル層及び前記p型エピタキシャル層にそれぞれ電気接続されるn電極及びp電極を形成することを特徴とするIII−V族窒化物半導体デバイスの製造方法。
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