JP5311765B2 - 半導体エピタキシャル結晶基板およびその製造方法 - Google Patents
半導体エピタキシャル結晶基板およびその製造方法 Download PDFInfo
- Publication number
- JP5311765B2 JP5311765B2 JP2007154709A JP2007154709A JP5311765B2 JP 5311765 B2 JP5311765 B2 JP 5311765B2 JP 2007154709 A JP2007154709 A JP 2007154709A JP 2007154709 A JP2007154709 A JP 2007154709A JP 5311765 B2 JP5311765 B2 JP 5311765B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- layer
- epitaxial
- dielectric layer
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 141
- 239000000758 substrate Substances 0.000 title claims description 106
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 229910002601 GaN Inorganic materials 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 45
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 19
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 15
- 239000012159 carrier gas Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 9
- 238000009751 slip forming Methods 0.000 claims description 9
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000005685 electric field effect Effects 0.000 claims 4
- 239000007769 metal material Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 129
- 239000007789 gas Substances 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 125000005234 alkyl aluminium group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Description
P. Kordos他、Applied Physics letters 87, 143501(2005)
図2に示す装置を用い、先ず、図1に示した層構造の半導体エピタキシャル基板を作成した。下地基板1として半絶縁性SiC基板を用いた。半絶縁性SiC基板を1000℃に加熱し、キャリアガスとして水素を60SLM、アンモニアを40SLM、恒温槽温度30℃に設定した原料容器からTMAを40sccm流し、AlNバッファ層2を1000Å成長した。ついで基板温度を1150℃に変更し、TMA流量を0sccmにしたのち、恒温槽温度30℃に設定した原料容器からTMGを40sccm流しGaNチャネル層3を20000Å積層した。ついで恒温槽温度30℃に設定した原料容器からTMAを40sccm流し、AlGaN電子供給層4を300Å成長した。
実施例1の場合と同様にしてAlGaN電子供給層4を成長した後、誘電体を成長せずに基板を冷却後、基板を反応炉から取り出した。ついで実施例1と同様の手法でソース電極とドレイン電極を形成した。ついで実施例1と同様の手法で素子分離およびゲート電極を形成し、ゲート絶縁膜もパッシベーション膜も有さないゲート長2μm、ゲート幅30μmのGaN−HFET作製した。
図2に示す装置を用い、次のようにして図1に示す層構造の半導体エピタキシャル基板を作製した。半絶縁性SiC基板を反応炉200内にセットし、半絶縁性SiC基板を1000℃に加熱し、反応炉200内にキャリアガスとして水素を60SLM、アンモニアを40SLM、恒温槽温度30℃に設定した容器からTMAを40sccm流し、AlN緩衝層を1000Å成長した。ついで基板温度1150℃に変更し、TMA流量を0sccmにしたのち、恒温槽温度30℃に設定した容器からTMGを40sccm流しGaNチャネル層を20000Å積層した。ついで恒温槽温度30℃に設定した容器からTMAを40sccm流し、AlGaN電子供給層を300Å成長した。ついで基板温度を700℃に変更し、TMGの供給を停止し、キャリアガスを水素から窒素に切り替え、ノルマルブチルエーテルを40sccm供給することによりAlx Oy を200Å成長して誘電体層とした。X線光電子分光法により求めたこの誘電体層の原素組成比は、x:y=6:4であた。その後、上述の如くして得られた成長基板を冷却し、反応炉200から取り出した。このようにして誘電体膜付きの半導体エピタキシャル基板を得た。
2 バッファ層
3 チャネル層
4 電子供給層
5 誘電体層
6 ドレイン電極
7 ゲート電極
8 ソース電極
9 素子分離
10 半導体エピタキシャル結晶基板
100〜104 マスフローコントローラー(MFC)
105、106 恒温層
107、108 原料容器
109〜111 高圧ガスボンベ
112〜114 減圧弁
200 反応炉
201 基板フォルダー
202 抵抗加熱機
203 排気口
Claims (8)
- 有機金属気相成長法にて成長した窒化物半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された半導体エピタキシャル結晶基板の製造方法であって、
エピタキシャル成長炉内で前記窒化物半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記誘電体層を前記窒化物半導体結晶層に連続して形成し、
前記誘電体層を、金属原料として有機金属を用い、酸素原料としてエーテルもしくは水を用い、窒素原料としてアンモニアを使用して、有機金属気相成長法にて成長させる半導体エピタキシャル結晶基板の製造方法。 - 前記誘電体層の少なくとも一部を積層する際に、5族原料であるアンモニアを供給しながら積層する請求項1に記載の半導体エピタキシャル結晶基板の製造方法。
- 前記誘電体層の少なくとも一部を積層する際に、原料のキャリアガスとして窒素を用いる請求項1または2に記載の半導体エピタキシャル結晶基板の製造方法。
- 有機金属気相成長法にて成長した窒化物半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された半導体エピタキシャル結晶基板の製造方法であって、
エピタキシャル成長炉内で前記窒化物半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記誘電体層を前記窒化物半導体結晶層に連続して形成し、
前記誘電体層が、AlOx、AlOx:N(0.5<x<1.5)、SiO2、SiO2:N、Ga2O3、Si3N4、HfO2、HfxAlyO3(0<x<1、y=2−1/2x)、HfxAlyO3:N(0<x<1、y=2−1/2x)、GdO、ZrO2、MgO、Ta2O5から選ばれる少なくとも一つの誘電体膜を積層することによって形成された半導体エピタキシャル結晶基板の製造方法。 - 有機金属気相成長法にて成長した窒化ガリウム半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された電界効果トランジスタ用エピタキシャル結晶基板の製造方法であって、
エピタキシャル成長炉内で前記窒化ガリウム半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記誘電体層を前記窒化ガリウム半導体結晶層に連続して形成し、
前記誘電体層を、金属原料として有機金属を用い、酸素原料としてエーテルもしくは水を用い、窒素原料としてアンモニアを使用して、有機金属気相成長法にて成長させるようにした電界効果トランジスタ用エピタキシャル結晶基板の製造方法。 - 有機金属気相成長法にて成長した窒化ガリウム半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された電界効果トランジスタ用エピタキシャル結晶基板の製造方法であって、
エピタキシャル成長炉内で前記窒化ガリウム半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記誘電体層を前記窒化ガリウム半導体結晶層に連続して形成し、
前記誘電体層が、AlOx、AlOx:N(0.5<x<1.5)、SiO2、SiO2:N、Ga2O3、Si3N4、HfO2、HfxAlyO3(0<x<1、y=2−1/2x)、HfxAlyO3:N(0<x<1、y=2−1/2x)、GdO、ZrO2、MgO、Ta2O5から選ばれる少なくとも一つの誘電体膜を積層することによって形成された電界効果トランジスタ用エピタキシャル結晶基板の製造方法。 - 有機金属気相成長法にて成長した窒化ガリウム半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された電界効果トランジスタ用エピタキシャル結晶基板であって、
前記誘電体層が、エピタキシャル成長炉内で前記窒化ガリウム半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記窒化ガリウム半導体結晶層に連続して形成され、
前記誘電体層が、金属原料として有機金属を用い、酸素原料としてエーテルもしくは水を用い、窒素原料としてアンモニアを使用して、有機金属気相成長法にて成長した電界効果トランジスタ用エピタキシャル結晶基板。 - 有機金属気相成長法にて成長した窒化ガリウム半導体結晶層表面に、パッシベーション膜あるいはゲート絶縁膜となるアモルファス結晶形を有する窒化物誘電体もしくは酸化物誘電体の誘電体層が付与された電界効果トランジスタ用エピタキシャル結晶基板であって、
前記誘電体層が、エピタキシャル成長炉内で前記窒化ガリウム半導体結晶層を成長させた後、そのまま該エピタキシャル成長炉内で前記有機金属気相成長法により前記窒化ガリウム半導体結晶層に連続して形成され、
前記誘電体層が、Al2O3、Al2O3:N、SiO2、SiO2:N、Ga2O3、Si3N4、HfO2、HfxAlyO3(0<x<1、y=2−1/2x)、HfxAlyO3:N(0<x<1、y=2−1/2x)、GdO、ZrO2、MgO、Ta2O5から選ばれる少なくとも一つの誘電体膜を積層することによって形成された電界効果トランジスタ用エピタキシャル結晶基板。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007154709A JP5311765B2 (ja) | 2006-09-15 | 2007-06-12 | 半導体エピタキシャル結晶基板およびその製造方法 |
PCT/JP2007/068476 WO2008032873A1 (fr) | 2006-09-15 | 2007-09-14 | Procédé pour fabriquer un substrat cristallin épitaxial semi-conducteur |
DE112007002162T DE112007002162T5 (de) | 2006-09-15 | 2007-09-14 | Verfahren zur Herstellung eines Halbleiterepitaxialkristallsubstrats |
TW096134390A TWI417414B (zh) | 2006-09-15 | 2007-09-14 | 半導體磊晶結晶基板的製造方法 |
KR1020097007566A KR101359094B1 (ko) | 2006-09-15 | 2007-09-14 | 반도체 에피택셜 결정 기판의 제조 방법 및 반도체 에피택셜 결정 기판 |
CN2007800340622A CN101517715B (zh) | 2006-09-15 | 2007-09-14 | 半导体外延结晶基板的制造方法 |
US12/310,984 US7951685B2 (en) | 2006-09-15 | 2007-09-14 | Method for manufacturing semiconductor epitaxial crystal substrate |
GB0906330A GB2456437A (en) | 2006-09-15 | 2009-04-09 | Method for manufacturing semiconductor epitaxial crystal substrate |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006250967 | 2006-09-15 | ||
JP2006250967 | 2006-09-15 | ||
JP2007154709A JP5311765B2 (ja) | 2006-09-15 | 2007-06-12 | 半導体エピタキシャル結晶基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098603A JP2008098603A (ja) | 2008-04-24 |
JP5311765B2 true JP5311765B2 (ja) | 2013-10-09 |
Family
ID=39183911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007154709A Expired - Fee Related JP5311765B2 (ja) | 2006-09-15 | 2007-06-12 | 半導体エピタキシャル結晶基板およびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7951685B2 (ja) |
JP (1) | JP5311765B2 (ja) |
KR (1) | KR101359094B1 (ja) |
CN (1) | CN101517715B (ja) |
DE (1) | DE112007002162T5 (ja) |
GB (1) | GB2456437A (ja) |
TW (1) | TWI417414B (ja) |
WO (1) | WO2008032873A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5496635B2 (ja) * | 2008-12-19 | 2014-05-21 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
TW201301570A (zh) * | 2011-06-28 | 2013-01-01 | Aceplux Optotech Inc | 多光色發光二極體及其製作方法 |
JP6119165B2 (ja) * | 2012-09-28 | 2017-04-26 | 富士通株式会社 | 半導体装置 |
US9219123B2 (en) * | 2012-11-26 | 2015-12-22 | Sharp Kabushiki Kaisha | Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method |
JP2014146646A (ja) * | 2013-01-28 | 2014-08-14 | Fujitsu Ltd | 半導体装置 |
US8878188B2 (en) * | 2013-02-22 | 2014-11-04 | Translucent, Inc. | REO gate dielectric for III-N device on Si substrate |
KR102052075B1 (ko) * | 2013-03-28 | 2020-01-09 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법, 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR102067596B1 (ko) * | 2013-05-03 | 2020-02-17 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
JP5984069B2 (ja) * | 2013-09-30 | 2016-09-06 | 株式会社タムラ製作所 | β−Ga2O3系単結晶膜の成長方法、及び結晶積層構造体 |
CN104638068B (zh) * | 2013-11-07 | 2018-08-24 | 上海蓝光科技有限公司 | 一种用于ⅲ-ⅴ族氮化物生长的衬底结构及其制备方法 |
US10529561B2 (en) * | 2015-12-28 | 2020-01-07 | Texas Instruments Incorporated | Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices |
US10128364B2 (en) * | 2016-03-28 | 2018-11-13 | Nxp Usa, Inc. | Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor |
US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
DE102017120896A1 (de) * | 2017-09-11 | 2019-03-14 | Aixtron Se | Verfahren zum Abscheiden einer C-dotierten AlN-Schicht auf einem Siliziumsubstrat und aus einer derartigen Schichtstruktur aufgebautes Halbleiter-Bauelement |
CN112670161B (zh) * | 2020-12-23 | 2022-07-22 | 中国电子科技集团公司第五十五研究所 | 一种低热阻氮化镓高电子迁移率晶体管外延材料制备方法 |
US20220367697A1 (en) * | 2021-05-17 | 2022-11-17 | Cree, Inc. | Group iii-nitride transistors with back barrier structures and buried p-type layers and methods thereof |
US11929428B2 (en) | 2021-05-17 | 2024-03-12 | Wolfspeed, Inc. | Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3873846T2 (de) * | 1987-07-16 | 1993-03-04 | Texas Instruments Inc | Behandlungsapparat und verfahren. |
JP3116731B2 (ja) * | 1994-07-25 | 2000-12-11 | 株式会社日立製作所 | 格子不整合系積層結晶構造およびそれを用いた半導体装置 |
JP3177951B2 (ja) * | 1997-09-29 | 2001-06-18 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
JP2000058454A (ja) * | 1998-08-05 | 2000-02-25 | Sony Corp | 横方向エピタキシャル成長用マスクの形成方法および横方向エピタキシャル成長方法 |
GB9916549D0 (en) * | 1999-07-14 | 1999-09-15 | Arima Optoelectronics Corp | Epitaxial growth method of semiconductors on highly lattice mismatched substrates using the buffer layer with solid-liquid phase transition |
US6355561B1 (en) | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
JP3836697B2 (ja) * | 2000-12-07 | 2006-10-25 | 日本碍子株式会社 | 半導体素子 |
JP3670628B2 (ja) * | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
JP2005268507A (ja) * | 2004-03-18 | 2005-09-29 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ及びその製造方法 |
JP2005322668A (ja) * | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
JP2006185962A (ja) * | 2004-12-24 | 2006-07-13 | Tokyo Institute Of Technology | 半導体成長用基板および半導体膜の製造方法 |
-
2007
- 2007-06-12 JP JP2007154709A patent/JP5311765B2/ja not_active Expired - Fee Related
- 2007-09-14 CN CN2007800340622A patent/CN101517715B/zh active Active
- 2007-09-14 DE DE112007002162T patent/DE112007002162T5/de not_active Withdrawn
- 2007-09-14 KR KR1020097007566A patent/KR101359094B1/ko active IP Right Grant
- 2007-09-14 TW TW096134390A patent/TWI417414B/zh active
- 2007-09-14 WO PCT/JP2007/068476 patent/WO2008032873A1/ja active Application Filing
- 2007-09-14 US US12/310,984 patent/US7951685B2/en active Active
-
2009
- 2009-04-09 GB GB0906330A patent/GB2456437A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2008032873A1 (fr) | 2008-03-20 |
KR101359094B1 (ko) | 2014-02-05 |
US7951685B2 (en) | 2011-05-31 |
KR20090057117A (ko) | 2009-06-03 |
JP2008098603A (ja) | 2008-04-24 |
US20100084742A1 (en) | 2010-04-08 |
GB0906330D0 (en) | 2009-05-20 |
DE112007002162T5 (de) | 2009-08-13 |
TW200823315A (en) | 2008-06-01 |
GB2456437A (en) | 2009-07-22 |
CN101517715B (zh) | 2010-12-22 |
CN101517715A (zh) | 2009-08-26 |
TWI417414B (zh) | 2013-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5311765B2 (ja) | 半導体エピタキシャル結晶基板およびその製造方法 | |
JP5543076B2 (ja) | 電界効果トランジスタ用エピタキシャル基板 | |
JP2008072029A (ja) | 半導体エピタキシャル結晶基板の製造方法 | |
CN103545361B (zh) | 化合物半导体器件及其制造方法、电源装置和高频放大器 | |
CN102197468B (zh) | 化合物半导体器件及其制造方法 | |
JP7013710B2 (ja) | 窒化物半導体トランジスタの製造方法 | |
JP2010239034A (ja) | 半導体装置の製造方法および半導体装置 | |
US9312341B2 (en) | Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the same | |
CN111406306B (zh) | 半导体装置的制造方法、半导体装置 | |
JP6993562B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2016207748A (ja) | 半導体装置の製造方法および半導体装置 | |
CN109599329B (zh) | 一种硅衬底上生长氮极性iii族氮化物半导体层的方法 | |
JP2017085058A (ja) | 化合物半導体装置及びその製造方法 | |
JP6028970B2 (ja) | 半導体装置の製造方法およびエッチング方法 | |
JP2004289005A (ja) | エピタキシャル基板、半導体素子および高電子移動度トランジスタ | |
JP2016219590A (ja) | 半導体基板の製造方法、及び半導体装置の製造方法 | |
KR100413523B1 (ko) | 이차원 전자가스의 전자밀도가 증가된 고전자이동도트랜지스터의 제조방법 | |
JP7201571B2 (ja) | 窒化物半導体基板および窒化物半導体装置 | |
JP5455875B2 (ja) | エピタキシャル基板の製造方法 | |
JP2012124530A (ja) | 半導体エピタキシャル結晶基板及びその製造方法 | |
WO2018123664A1 (ja) | 半導体基板および電子デバイス | |
JP2021520643A (ja) | 核生成層の堆積方法 | |
WO2018196948A1 (en) | Interlayer barrier |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100217 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120312 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120315 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130531 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130625 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130702 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5311765 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |