JP2993279B2 - Thin film forming equipment - Google Patents
Thin film forming equipmentInfo
- Publication number
- JP2993279B2 JP2993279B2 JP4173974A JP17397492A JP2993279B2 JP 2993279 B2 JP2993279 B2 JP 2993279B2 JP 4173974 A JP4173974 A JP 4173974A JP 17397492 A JP17397492 A JP 17397492A JP 2993279 B2 JP2993279 B2 JP 2993279B2
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- thin film
- forming apparatus
- insulating tube
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は薄膜形成装置に関するも
のであり、特に、選択された領域に高速で成膜が行える
薄膜形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus, and more particularly to a thin film forming apparatus capable of forming a film in a selected area at a high speed.
【０００２】[0002]
【従来の技術】近年、薄膜はその機械的、電気的性質が
優れている事から、機械部品、電気部品等様々な分野に
応用されはじめ、薄膜形成方法及びその装置の進歩はめ
ざましいものがある。2. Description of the Related Art In recent years, since thin films have excellent mechanical and electrical properties, they have been applied to various fields such as mechanical parts and electric parts, and there have been remarkable advances in thin film forming methods and apparatuses. .
【０００３】以下に従来の薄膜形成装置について説明す
る。図４は、従来の薄膜形成装置を示すものでありダイ
ヤモンド状薄膜の成膜装置である。図４において、１１
は真空容器、１２はイオン源、１３は基体、１５は荷電
粒子、１６はメッシュ状電極、１７は成膜粒子のガス導
入口、１８はフィラメント、１９は基体ホルダーであ
る。A conventional thin film forming apparatus will be described below. FIG. 4 shows a conventional thin film forming apparatus, which is a diamond-like thin film forming apparatus. In FIG. 4, 11
Is a vacuum vessel, 12 is an ion source, 13 is a substrate, 15 is charged particles, 16 is a mesh electrode, 17 is a gas inlet for film-forming particles, 18 is a filament, and 19 is a substrate holder.
【０００４】真空容器１１内において、イオン源１２と
基体１３は対向して設置されており、基体１３にはメッ
シュ状電極１６に対しマイナスの電位が与えられてい
る。イオン源１２は成膜粒子のガス導入口１７、フィラ
メント１８、メッシュ状電極１６からなり、メッシュ状
電極１６はプラスの電位が与えられている。In a vacuum vessel 11, an ion source 12 and a base 13 are placed facing each other, and a negative potential is applied to the base 13 with respect to the mesh electrode 16. The ion source 12 includes a gas introduction port 17 for film-forming particles, a filament 18, and a mesh electrode 16. The mesh electrode 16 is given a positive potential.
【０００５】以上のように構成された薄膜形成装置につ
いて、以下その成膜過程を説明する。まず、ガス導入口
１７から入った成膜粒子は、フィラメント１８からの熱
電子によりプラズマ化され、プラズマの電子はメッシュ
状電極１６により取り除かれ、荷電粒子１５のみが、基
体１３とメッシュ状電極１６にかけられた電位により引
き出される。このとき荷電粒子１５は電界分布の方向に
引き出され、成膜を必要とする領域以外にも到達する。The film forming process of the thin film forming apparatus configured as described above will be described below. First, the film-forming particles entering from the gas inlet 17 are converted into plasma by thermal electrons from the filament 18, the plasma electrons are removed by the mesh electrode 16, and only the charged particles 15 are removed from the substrate 13 and the mesh electrode 16. It is extracted by the potential applied to. At this time, the charged particles 15 are extracted in the direction of the electric field distribution, and reach areas other than the area where film formation is required.
【０００６】[0006]
【発明が解決しようとする課題】上記従来の構成の場
合、成膜速度の向上は成膜粒子の供給量を増す等の方法
で行われている。しかしながら、これらの方法では真空
容器内の圧力、その他条件が変化し、膜質が変わってし
まうという欠点を有していた。In the case of the above-mentioned conventional structure, the film forming speed is improved by increasing the supply amount of the film forming particles. However, these methods have a disadvantage that the pressure in the vacuum vessel and other conditions change, and the film quality changes.
【０００７】本発明は、上記従来の問題点を解決するも
ので、基体表面に成膜速度を向上し、必要とされる領域
に、必要とされる薄膜を形成する薄膜形成装置である。The present invention solves the above-mentioned conventional problems, and is a thin film forming apparatus for improving a film forming speed on a substrate surface and forming a required thin film in a required area.
【０００８】[0008]
【課題を解決するための手段】この目的を達成するため
に、本発明の薄膜形成装置は、従来の薄膜形成装置の荷
電粒子の供給源と基体との間に絶縁性の管を付加してい
る。In order to achieve this object, a thin film forming apparatus according to the present invention is provided by adding an insulating tube between a charged particle supply source and a substrate of a conventional thin film forming apparatus. I have.
【０００９】[0009]
【作用】この構成によって、電場は絶縁性の管の中に集
中し、供給源から出た荷電粒子は絶縁性の管の中を進む
ため高密度で基体に到達する。With this configuration, the electric field is concentrated in the insulating tube, and the charged particles from the supply source travel through the insulating tube and reach the substrate at a high density.
【００１０】[0010]
【実施例】以下、本発明の一実施例について、図面を見
ながら説明する。図１は本発明の第１の実施例における
薄膜形成装置の断面図を示すものであり、ダイヤモンド
状薄膜の成膜装置である。図１において、１は真空容
器、２はイオン源、３は基体、４は絶縁性の管、５は荷
電粒子、６はメッシュ状電極、７は成膜粒子のガス導入
口、８はフィラメント、９は基体ホルダーである。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a thin film forming apparatus according to a first embodiment of the present invention, which is an apparatus for forming a diamond-like thin film. In FIG. 1, 1 is a vacuum vessel, 2 is an ion source, 3 is a base, 4 is an insulating tube, 5 is a charged particle, 6 is a mesh electrode, 7 is a gas inlet for film-forming particles, 8 is a filament, 9 is a substrate holder.
【００１１】真空容器１内において、イオン源２と基体
３は対向して設置されており、イオン源２と基体３との
間に、イオン源方向と基体方向に開口部を持つ絶縁性の
管４が設置されており、基体３にはメッシュ状電極６に
対してマイナスの電位が与えられている。イオン源２は
成膜粒子のガス導入口７、フィラメント８、メッシュ状
電極６からなり、メッシュ状電極６はプラスの電位が与
えられている。In a vacuum vessel 1, an ion source 2 and a substrate 3 are installed facing each other, and an insulating tube having an opening between the ion source 2 and the substrate 3 in the direction of the ion source and the direction of the substrate. The substrate 3 is provided with a negative potential with respect to the mesh electrode 6. The ion source 2 includes a gas inlet 7 for film-forming particles, a filament 8, and a mesh electrode 6, and the mesh electrode 6 is given a positive potential.
【００１２】以上のように構成された薄膜形成装置につ
いて、以下絶縁性の管を付加した事による特徴を説明す
る。まず、ガス導入口７から入った成膜粒子は、フィラ
メント８からの熱電子によりプラズマ化され、プラズマ
の電子はメッシュ状電極６により取り除かれ、荷電粒子
５のみが、基体３とメッシュ状電極６にかけられた電位
により引き出される。このとき荷電粒子５は電界分布の
方向に引き出されようとするが、イオン源２と基体３の
間に設置された絶縁性の管４があるために、荷電粒子５
は絶縁性の管４の中に入り、絶縁性の管４の内壁がその
中を通る荷電粒子５によってプラスに帯電し、電界分布
の広がりを規制する。その結果、荷電粒子５は高密度で
絶縁性の管４の中を通過し、基体３に到達する。The features of the thin-film forming apparatus configured as described above, which is obtained by adding an insulating tube, will be described below. First, the film-forming particles entering from the gas inlet 7 are turned into plasma by thermions from the filament 8, the plasma electrons are removed by the mesh electrode 6, and only the charged particles 5 are removed from the substrate 3 and the mesh electrode 6. It is extracted by the potential applied to. At this time, the charged particles 5 try to be drawn out in the direction of the electric field distribution, but since the insulating tube 4 is provided between the ion source 2 and the base 3, the charged particles 5
Enters the insulating tube 4 and the inner wall of the insulating tube 4 is positively charged by the charged particles 5 passing through the tube, thereby restricting the spread of the electric field distribution. As a result, the charged particles 5 pass through the high-density insulating tube 4 and reach the base 3.
【００１３】以下に実験結果を示す。この実験に使用さ
れている絶縁性の管４、およびイオン源は断面が矩形の
ものである。図２は本発明の絶縁性の管を付加したとき
の長手方向の膜厚分布である。図３は絶縁性の管を付加
していない時の長手方向膜厚分布である。電界分布の広
がりを規制したため、本発明の長手方向膜厚は両側が異
常に大きくなっている。幅方向でも、同様の膜厚分布で
ある。よって、成膜幅は膜厚が一定である部分となる。
（表１）は従来構成の成膜速度と本発明の第１の実施例
の成膜速度を比較したものである。The experimental results are shown below. The insulating tube 4 and the ion source used in this experiment have a rectangular cross section. FIG. 2 is a longitudinal film thickness distribution when the insulating tube of the present invention is added. FIG. 3 shows the film thickness distribution in the longitudinal direction when no insulating tube is added. Since the spread of the electric field distribution is regulated, the film thickness in the longitudinal direction of the present invention is abnormally large on both sides. The same film thickness distribution is obtained in the width direction. Therefore, the film formation width is a portion where the film thickness is constant.
Table 1 compares the film forming speed of the conventional configuration with the film forming speed of the first embodiment of the present invention.
【００１４】[0014]
【表１】 [Table 1]
【００１５】以上のように本実施例によれば、イオン源
と基体との間に絶縁性の管を設ける事により、成膜速度
を向上させる事ができる。As described above, according to this embodiment, by providing an insulating tube between the ion source and the base, the film forming speed can be improved.
【００１６】以下本発明の第２の実施例について図面を
参照しながら説明する。本実施例の構成は、第１の実施
例のものと同様である。第１の実施例の構成と異なるの
は、絶縁性の管の開口部長手方向長さをイオン源の長手
方向の長さより両端３５ｍｍずつ長くしたことである。
以上のように構成された薄膜形成装置について実験結果
に基づいて説明する。（表２）は絶縁性の管の長手方向
長さと成膜幅、その時の成膜速度の関係を示したもので
ある。Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. The configuration of this embodiment is the same as that of the first embodiment. The difference from the configuration of the first embodiment is that the longitudinal length of the opening of the insulating tube is 35 mm longer at both ends than the longitudinal length of the ion source.
The thin film forming apparatus configured as described above will be described based on experimental results. Table 2 shows the relationship between the length of the insulating tube in the longitudinal direction, the film forming width, and the film forming speed at that time.
【００１７】[0017]
【表２】 [Table 2]
【００１８】以上のように、付加する絶縁性の管の大き
さを限定する事により、成膜速度は向上でき、しかも従
来の成膜幅をほぼ確保する事ができる。As described above, by limiting the size of the insulating tube to be added, the film forming speed can be improved, and the conventional film forming width can be almost secured.
【００１９】なお、実施例においてダイヤモンド状薄膜
の成膜装置について説明したが、本発明はイオンプレー
ティング、スパッタ蒸着等の荷電粒子を使用した薄膜形
成装置、および荷電粒子を用いた各種装置に利用できる
事は言うまでもない。Although the apparatus for forming a diamond-like thin film has been described in the embodiments, the present invention is applicable to a thin film forming apparatus using charged particles such as ion plating and sputter deposition, and various apparatuses using charged particles. It goes without saying that you can do it.
【００２０】[0020]
【発明の効果】以上のように、本発明は成膜粒子の供給
源と基体を持つ従来の薄膜形成装置に、簡単な構成の絶
縁性の管を付加する事により、成膜速度が向上でき、1.
膜の量産性向上に有利、2.真空容器内壁に成膜粒子が付
着せずメンテナンスが容易、3.成膜粒子を効率よく成膜
できるので成膜コストが下がる、等工業的価値が極めて
高く、優れた薄膜形成装置を実現できるものである。As described above, according to the present invention, the film forming speed can be improved by adding an insulating tube having a simple structure to a conventional thin film forming apparatus having a film particle supply source and a substrate. , 1.
Extremely high industrial value, such as 2) film deposition particles do not adhere to the inner wall of the vacuum vessel and maintenance is easy, 3) film deposition particles can be formed efficiently, and film formation costs are reduced. Thus, an excellent thin film forming apparatus can be realized.
【図１】本発明の第１の実施例における薄膜形成装置の
断面図FIG. 1 is a sectional view of a thin film forming apparatus according to a first embodiment of the present invention.
【図２】第１の実施例の薄膜形成装置の膜厚分布図FIG. 2 is a diagram showing a film thickness distribution of the thin film forming apparatus according to the first embodiment.
【図３】従来の薄膜形成装置の膜厚分布図FIG. 3 is a diagram showing a film thickness distribution of a conventional thin film forming apparatus.
【図４】従来の薄膜形成装置の断面図FIG. 4 is a sectional view of a conventional thin film forming apparatus.
１ 真空容器 ２ イオン源 ３ 基体 ４ 絶縁性の管 ５ 荷電粒子 ６ メッシュ状電極 ７ ガス導入口 ８ フィラメント ９ 基体ホルダー DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Ion source 3 Substrate 4 Insulating tube 5 Charged particle 6 Mesh electrode 7 Gas inlet 8 Filament 9 Substrate holder
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒川 英雄 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平１−306564（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 14/00,14/22 C23C 14/32 - 14/34 C23C 16/00,16/44 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hideo Kurokawa 1006 Kazuma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-1-306564 (JP, A) (58) Field (Int.Cl. 6 , DB name) C23C 14 / 00,14 / 22 C23C 14/32-14/34 C23C 16 / 00,16 / 44
Claims (2)
基体が設置された薄膜形成装置において、前記供給源方
向と前記基体方向に開口部を持ち、その開口部が前記供
給源開口部と同等もしくはそれ以上の大きさである絶縁
性の管を付加した薄膜形成装置。1. A thin film forming apparatus having a charged particle supply source and a substrate opposed to said supply source, wherein said opening has openings in said supply source direction and said substrate direction, and said opening is provided in said supply source opening. A thin-film forming apparatus to which an insulating tube having a size equal to or larger than that of a section is added.
供給源の大きさよりある一定量大きくしたことを特徴と
する請求項１記載の薄膜形成装置。2. The thin film forming apparatus according to claim 1, wherein the size of the opening of the insulating tube is made larger by a certain amount than the size of the charged particle supply source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173974A JP2993279B2 (en) | 1992-07-01 | 1992-07-01 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173974A JP2993279B2 (en) | 1992-07-01 | 1992-07-01 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0617254A JPH0617254A (en) | 1994-01-25 |
| JP2993279B2 true JP2993279B2 (en) | 1999-12-20 |
Family
ID=15970474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4173974A Expired - Fee Related JP2993279B2 (en) | 1992-07-01 | 1992-07-01 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2993279B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3317841B2 (en) * | 1996-03-25 | 2002-08-26 | 株式会社日立製作所 | Ignition timing control device for internal combustion engine |
-
1992
- 1992-07-01 JP JP4173974A patent/JP2993279B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0617254A (en) | 1994-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |