JPH01313810A - High speed manufacture of ito transparent conductive film - Google Patents
High speed manufacture of ito transparent conductive filmInfo
- Publication number
- JPH01313810A JPH01313810A JP14512288A JP14512288A JPH01313810A JP H01313810 A JPH01313810 A JP H01313810A JP 14512288 A JP14512288 A JP 14512288A JP 14512288 A JP14512288 A JP 14512288A JP H01313810 A JPH01313810 A JP H01313810A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- ito
- gas
- ito transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000002985 plastic film Substances 0.000 claims abstract description 11
- 229920006255 plastic film Polymers 0.000 claims abstract description 11
- 238000007733 ion plating Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 description 10
- 238000001816 cooling Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、ＩＴＯ透明導電性フィルムの高速製造方法
に関するものである。さらに詳しくは、高透過率で、し
かも優れた導電性を有するＩＴＯ薄膜を高速移動するフ
ィルム表面上に高品質で均一に形成するＩＴＯ透明導電
性フィルムの高速製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a high-speed manufacturing method for an ITO transparent conductive film. More specifically, the present invention relates to a high-speed manufacturing method for an ITO transparent conductive film, in which an ITO thin film having high transmittance and excellent conductivity is uniformly formed with high quality on the surface of a film moving at high speed.
（従来の技術）
従来より、プラスチック等からなる導電性フィルムにつ
いては、帯電防止、電磁波シールド、タッチパネル、表
示素子等の多様な用途分野への応用が期待され、基礎研
究が行れてきており、すでにその一部は実用化されてき
ている。たとえば、プラスチック等のフィルム表面上に
金属または金属酸ざヒ物などの導電性物質のｒ４ｒｆＡ
を形成した導電性フィルムが知られている。この導電性
フィルムの製造方法としては、真空室内で蒸発原料を蒸
発させ、蒸発粒子を高周波電源等を用いたグロー放電に
よりプラズマイオン化し、フィルム表面上に蒸着させる
イオンプレーティング法が知られている。(Prior art) Basic research has been conducted on conductive films made of plastics, etc., as they are expected to be applied to a variety of fields such as antistatic, electromagnetic shielding, touch panels, and display devices. Some of them have already been put into practical use. For example, r4rfA of a conductive substance such as a metal or a metal acid atomized material on the surface of a film such as plastic.
Conductive films are known. A known method for manufacturing this conductive film is the ion plating method, in which raw materials are evaporated in a vacuum chamber, evaporated particles are plasma ionized by glow discharge using a high-frequency power source, and the evaporated particles are deposited on the film surface. .
（発明が解決しようとする問題点）
しかしながら、高透過率で、しかも導電性に優れた物性
を示す薄膜を高速で製造するについては、改良しなけれ
ばならない問題が数多くあるのが現状である。(Problems to be Solved by the Invention) However, the current situation is that there are many problems that need to be improved in order to rapidly produce thin films that exhibit high transmittance and excellent electrical conductivity.
たとえば、Ｉ ｎ２０３を蒸発原料とした透明導電性フ
ィルムの場合には、透明度が高く、面積抵抗が低いとい
う特長を有するが、熱的不安定性や耐薬品性等が低いと
いう欠点があり、Ｓ ｎ Ｏ２を蒸発原料とした透明導
電性フィルムの場合には、熱的安定性や耐薬品性は非常
に優れているが、透明度が低く、面積抵抗が高いという
欠点があった。For example, a transparent conductive film using I n203 as an evaporation raw material has the features of high transparency and low sheet resistance, but has drawbacks such as thermal instability and low chemical resistance. Transparent conductive films using O2 as an evaporation raw material have excellent thermal stability and chemical resistance, but have the drawbacks of low transparency and high sheet resistance.
最近、このＩｎ ＯとＳ ｎ Ｏ２との混合物からな
るＳ ｎ Ｏ２を５重量％含んだＩＴＯを蒸発原料とし
て、透過率の高い、導電性に優れたＩＴＯ薄膜をプラス
チックフィルム表面上に形成してなるＩＴＯ透明導電性
フィルムが提案されている。Recently, an ITO thin film with high transmittance and excellent conductivity has been formed on the surface of a plastic film using ITO containing 5% by weight of SnO2, which is a mixture of InO and SnO2, as an evaporation raw material. An ITO transparent conductive film has been proposed.
しかしながら、このＩＴＯ薄膜を高速移動するプラスチ
ック表面上に高品質で均一に形成することは回能であっ
た。However, it has been difficult to uniformly form this ITO thin film on high-speed moving plastic surfaces with high quality.
すなわち、従来からのイオンプレーティング法において
は、プラズマイオン化した粒子や気体の反応性を十分に
制御することが難しく、このため、所定の組成や性質を
有するＩＴＯ薄膜を再現性よく均一に形成することは難
しいという問題点があった。In other words, in the conventional ion plating method, it is difficult to sufficiently control the reactivity of plasma ionized particles and gas, and therefore it is difficult to uniformly form an ITO thin film having a predetermined composition and properties with good reproducibility. The problem was that it was difficult.
たとえば、ホロカソード型イオンプレーティング法の場
合には、カソード部等の汚れや損傷等が避けられず、熱
的安定性に欠け、基板フィルムの発熱も避けられなかっ
た。また、高周波励起型のイオンプレーティング法の場
合には、高品質の薄膜を得るためには有利であるが、長
尺で中広のフィルム等には、効率が悪く、生産性の点で
問題があった。For example, in the case of the hollow cathode type ion plating method, contamination and damage to the cathode portion, etc., were unavoidable, thermal stability was lacking, and heat generation of the substrate film was unavoidable. In addition, in the case of high-frequency excitation type ion plating method, it is advantageous for obtaining high-quality thin films, but it is not efficient for long, medium-wide films, etc., and there are problems in terms of productivity. was there.
この発明は、以上の事情に鑑みてなされたものであり、
上記した通りの問題点を解決し、従来がらのイオンル−
ティング法を改良し、高速移動するプラスチックフィル
ム表面上に高透過率で、しかも、導電性に優れたＩＴＯ
薄膜を高品質で均一に形成するＩＴＯ透明導電性フィル
ムの高速製造方法を提供することを目的としている。This invention was made in view of the above circumstances,
By solving the above-mentioned problems, the conventional ion rule
By improving the coating method, ITO, which has high transmittance and excellent conductivity, is applied to the surface of a plastic film that moves at high speed.
The object of the present invention is to provide a high-speed manufacturing method for an ITO transparent conductive film that forms a high-quality, uniform thin film.
（問題点を解決するための手段）
この発明は、上記の目的を実現するために、５ｍ／分以
上で高速移動するグラスチックフィルム表面上にＩＴＯ
透明導電性薄膜を反応性イオンプレーティングによって
形成するにあたり、真空室内にＡｒガスを６〜１０ ｘ
１０−３ｓｃｃｍ／ｊ ｔ−ｓＪ：び０２ガスを２．
５〜１０ｘｌＯｓｃｃｍ／ｊの範囲で導入する。(Means for Solving the Problems) In order to achieve the above-mentioned object, the present invention provides ITO on the surface of a glass film that moves at a high speed of 5 m/min or more.
When forming a transparent conductive thin film by reactive ion plating, Ar gas was introduced into the vacuum chamber at 6 to 10 x
10-3 sccm/j t-sJ: and 02 gas 2.
It is introduced in the range of 5 to 10xlOsccm/j.
フィルムの移動速度は、フィルムの巾、長さおよび材質
等に応じて、５〜３０ｍ／分の範囲で適宜選択すること
ができる。The moving speed of the film can be appropriately selected in the range of 5 to 30 m/min depending on the width, length, material, etc. of the film.
く作 用）
この発明のＩＴＯ透明導電性フィルムの製造方法によっ
て、高透過率で、導電性に優れた、機能性を有するＩＴ
Ｏ薄膜を高品質で均一にプラスチックフィルム上に形成
することができ、ＩＴＯ透明導電性フィルムを高効率で
製造することができる。Function) By the method for producing an ITO transparent conductive film of the present invention, a functional IT film with high transmittance and excellent conductivity can be produced.
A high-quality O thin film can be uniformly formed on a plastic film, and an ITO transparent conductive film can be manufactured with high efficiency.
（実施例）
以下、この発明のＩＴＯ透明透明導電性フィルム高速製
造方法いて説明する。(Example) Hereinafter, a method for high-speed production of an ITO transparent conductive film of the present invention will be explained.
第１図は、この発明のＩＴＯ透明導電性フィルムの高速
製造方法と装置の一例を示した概念図である。FIG. 1 is a conceptual diagram showing an example of a high-speed manufacturing method and apparatus for an ITO transparent conductive film of the present invention.
この例においては、真空室（１）は、ベルジャ（２）に
より気密に保たれており、真空ポンプによる排気系（３
）により排気され、高真空とすることができる。ベルジ
ャ（２）側壁部には、Ａｒガス導入口（４）を有したプ
ラズマビーム発生装置（５）と０□ガス導入装置（６）
を設けている。In this example, the vacuum chamber (1) is kept airtight by a belljar (2), and an exhaust system (3) by a vacuum pump is maintained.
) to create a high vacuum. A plasma beam generator (5) with an Ar gas inlet (4) and a 0□ gas inlet device (6) are installed on the side wall of the bell jar (2).
has been established.
プラズマ発生装置（５）は、プラスチックフィルム（１
２）の巾に応じて複数台設置することも可能である。真
空室（１）には、蒸発原料であるＩＴＯをペレット状に
したＩＴＯペレット（７）を充填したハース（８）と、
送り出しロール（９）、ガイドロール（１０）および巻
き取りロール（１１）からなるプラスチックフィルム（
１２）の搬送系と、冷却手段（１３）を設けている。ま
た、シャッター（１４）も設けている。The plasma generator (5) is a plastic film (1
It is also possible to install multiple units depending on the width of 2). The vacuum chamber (1) includes a hearth (8) filled with ITO pellets (7) made from ITO, which is a raw material for evaporation, and
A plastic film (
12) and a cooling means (13) are provided. A shutter (14) is also provided.
プラスチックフィルム（１２）の材質については、特に
限定はなく、ポリエステル、たとえばＰＥＴ（ポリエチ
レンテレフタレート）、ポリサル７オン、ポリイミド等
の耐熱性フィルムを用いることができ、その巾は１００
〜１０００１Ｉ１１の範囲で適宜選択することができる
。The material of the plastic film (12) is not particularly limited, and heat-resistant films such as polyester, such as PET (polyethylene terephthalate), polysal 7on, and polyimide, can be used, and the width thereof is 100 mm.
It can be appropriately selected within the range of 10001I11 to 10001I11.
冷却手段については、水冷あるいは空冷等によって行う
ことができる。As for the cooling means, water cooling or air cooling can be used.
真空ポンプによる排気系（３）により、真空室内の圧力
を１ｘｌＯ〜１０ Ｔｏｒｒ程度にする。特には５〜
９Ｘ１０−４Ｔｏｒｒ前後が好ましい、Ａｒガス導入口
（４）がらＡｒガスを導入し、プラズマビーム発生装置
（５）近傍をｌ Ｔ ｏ ｒ ｒ前後にする。！圧を印
加し、プラズマ放電を生起し、プラズマビーム（１５）
を放射させる。The pressure inside the vacuum chamber is set to about 1xlO to 10 Torr using an evacuation system (3) using a vacuum pump. Especially 5~
Argon gas is introduced through the Ar gas inlet (4), which is preferably around 9×10 −4 Torr, and the temperature near the plasma beam generator (5) is set at around 1 Torr. ! Apply pressure to generate plasma discharge and generate plasma beam (15)
radiate.
１０’Ｔｏｒｒ前後に保ったＩＴＯペレット（７）を充
填したハース（８）にプラズマビーム（１５）を圧力勾
配により集束させ、ＩＴＯの蒸発とイオン化励起を行う
、この例においては、プラズマビームの集束率および安
定性を高めるために、磁石（１６ン （１７ンを設けて
もいる。磁石（１６）（１７）については、特に限定は
なく、レアアース等からなる永久磁石あるいは電磁石等
を適宜選択することができる。また、磁石（１６）は、
真空室（１）外に設けてもがまわない。A plasma beam (15) is focused by a pressure gradient onto a hearth (8) filled with ITO pellets (7) maintained at around 10'Torr, and evaporation and ionization excitation of ITO are performed.In this example, the plasma beam is focused. In order to improve efficiency and stability, magnets (16 and 17) are also provided. There are no particular limitations on the magnets (16) and (17), and permanent magnets or electromagnets made of rare earth etc. may be selected as appropriate. In addition, the magnet (16) can be
It does not matter if it is installed outside the vacuum chamber (1).
０２ガス導入装置（６）から０２ガスを一定の流量でプ
ラズマビーム（１５）中に供給する。The 02 gas is supplied from the 02 gas introducing device (6) into the plasma beam (15) at a constant flow rate.
０゜ガスを導入することで、ＩＴＯの蒸発粒子の酸化を
促進させ、膜質および物性を高めることができる。この
例においては、０２ガス導入装置（６）をプラズマビー
ム発生装置（５）近傍に設けているが、特に限定はなく
、０２ガスがプラズマビーム（１５）中に供給されるよ
うにすればよい。By introducing 0° gas, oxidation of evaporated ITO particles can be promoted and film quality and physical properties can be improved. In this example, the 02 gas introducing device (6) is provided near the plasma beam generator (5), but there is no particular limitation, and the 02 gas may be supplied into the plasma beam (15). .
もちろん、この発明のＩＴＯ透明導電性フィルムの高速
製造方法における装置は、第１図に限定されることはな
く、装置の構造および構成の細部については、様々な態
様が可能であることはいうまでもない。Of course, the apparatus for the high-speed production method of ITO transparent conductive film of the present invention is not limited to the one shown in FIG. Nor.
次に、この発明のＩＴＯ透明導電性フィルムの高速製造
方法による実施例を示し、さらに詳しくこの発明につい
て説明する。Next, an example of a high-speed manufacturing method of an ITO transparent conductive film of the present invention will be shown, and the present invention will be explained in more detail.
実施例１
第１図に示したような装置を用い、ＩＴＯ透明導電性フ
ィルムを次の反応条件で製造した。なお、プラスチック
フィルムとしては、フィルム巾２５０１．５５０ｒｖ平
行光線透過率８７％のＰＥＴフィルムを用い、このフィ
ルムの移動速度を１８ｍ／分とした。また、ＩＴＯベレ
ットを充填したハースとフィルムとの距離は４０■とし
た。Example 1 Using the apparatus shown in FIG. 1, an ITO transparent conductive film was produced under the following reaction conditions. As the plastic film, a PET film with a film width of 2501.550 rv and a parallel light transmittance of 87% was used, and the moving speed of this film was 18 m/min. Further, the distance between the hearth filled with ITO pellets and the film was 40 square meters.
（ａ） 導入ガス
Ａｒガス： ８．７５Ｘ １０−３ｓｃｃｍ／Ｊ（ｂ）
放電
放電電流：２５０Ａ
放電電圧＝７０ｖ
フィルム表面上に膜厚的５０ＯＡのＩＴＯ４ＷＡが形成
され、５５０ｔｖ平行光線透過率８３％、面積抵抗１４
０〜１４６Ω／口のＩＴＯ透明導電性フィルムを得た。(a) Introduced gas Ar gas: 8.75X 10-3 sccm/J (b)
Discharge Discharge current: 250 A Discharge voltage = 70 V ITO4WA with a film thickness of 50 OA is formed on the film surface, 550 tv parallel light transmittance 83%, sheet resistance 14
An ITO transparent conductive film having a resistance of 0 to 146 Ω/hole was obtained.
実施例２
実施例１と同様にして導入ガスおよび放電の条件を次の
ように変えて、ＩＴＯ透明導電性フィルムを製造した。Example 2 An ITO transparent conductive film was produced in the same manner as in Example 1, changing the introduced gas and discharge conditions as follows.
（ａ） 導入ガス
Ａｒガス： ６．２ＳＸ １０−３ｓｅｃｉ／ｊ（ｂ）
放電
放電電流：２４０Ａ
放′Ｓ電圧：６５Ｖ
フィルム表面上に実施例１と同様の膜厚のＩＴＯ薄膜が
形成され、同様の透過率を有し、面積抵抗は１８０〜２
１０Ω／口であった。(a) Introduced gas Ar gas: 6.2SX 10-3seci/j (b)
Discharge current: 240A Discharge voltage: 65V An ITO thin film with the same thickness as in Example 1 was formed on the film surface, had the same transmittance, and had a sheet resistance of 180 to 2.
It was 10Ω/mouth.
以上の結果をまとめたものが表１である。Table 1 summarizes the above results.
表１
この実施例１〜２においては、ＩＴＯ薄膜の膜厚および
膜質は均一であり、熱的安定性や耐薬品性もきわめて良
好であった。また、表１に示した通り、高透過率で、導
電性にきわめて優れたＩＴＯ透明導電性フィルムが得ら
れた。Table 1 In Examples 1 and 2, the thickness and quality of the ITO thin film were uniform, and the thermal stability and chemical resistance were also very good. Further, as shown in Table 1, an ITO transparent conductive film with high transmittance and extremely excellent conductivity was obtained.
さらに、この発明の発明者らは、この発明の圧力勾配に
よるプラズマビームを用いて効率よくＩＴＯを蒸発させ
イオン化励起させるためには、Ａｒガスを６〜１０ Ｘ
１０−３ｓｃｃｎ／ＩＩの範囲で導入し、放電電圧を
５０〜１００ｖの範囲で印加することが好ましく、また
、ＩＴＯの酸化を促進させるために導入する０２ガス流
量は、２５〜ｌ０Ｘ１０“３ＳＣＣ１１／１の範囲が好
ましいとのきわめて重要な知見を得ることができな。Furthermore, the inventors of the present invention have discovered that in order to efficiently evaporate and ionize ITO using the pressure gradient plasma beam of the present invention, Ar gas must be heated at 6 to 10×
It is preferable to introduce the 02 gas in the range of 10-3sccn/II and apply the discharge voltage in the range of 50 to 100v, and the flow rate of the 02 gas introduced to promote the oxidation of ITO is 25 to 10×10"3SCC11/1. However, we have not been able to obtain the extremely important finding that a range of .
（発明の効果）
以上詳しく説明した通り、この発明のＩ’Ｔ’Ｏ透明導
電性フィルムの高速製造方法によって、高透過率でしか
も導電性に優れたＩＴＯ薄膜を高速度でフィルム表面上
に高品質でしかも均一に形成することができ、再現性を
有するＩＴＯ透明導電性フィルムを高効率で製造するこ
とができる。(Effects of the Invention) As explained in detail above, by the high-speed production method of the I'T'O transparent conductive film of the present invention, an ITO thin film with high transmittance and excellent conductivity is formed on the film surface at high speed. An ITO transparent conductive film that can be formed with high quality and uniformity and has reproducibility can be manufactured with high efficiency.
第１図は、この発明のＩＴＯ透明導電性フィルムの高速
製造方法と装置の概念の一例を示した断面図である。
１・・・真空室 ２・・・ベルジャ３・・・
排気系 ４・・・Ａｒガス導入口５・・・プ
ラズマビーム発生装置
６・・・０２ガス導入装置
７・・・ＩＴＯペレット ８・・・ハース９・・・送
り出しロール １０・・・ガイドロール１１・・・巻き
取りロール
１２・・・プラスチックフィルム
１３・・・冷却手段 １４・・・シャッター１５
・・・プラズマビーム １６．１７・・・磁 石代理人
弁理士 西 澤 利 夫第１図FIG. 1 is a sectional view showing an example of the concept of the high-speed production method and apparatus for an ITO transparent conductive film of the present invention. 1...Vacuum chamber 2...Bell jar 3...
Exhaust system 4... Ar gas inlet 5... Plasma beam generator 6... 02 Gas introduction device 7... ITO pellet 8... Hearth 9... Delivery roll 10... Guide roll 11 ... Winding roll 12 ... Plastic film 13 ... Cooling means 14 ... Shutter 15
...Plasma beam 16.17...Magnet agent Patent attorney Toshio Nishizawa Figure 1
Claims (1)
ム表面上にＩＴＯ透明導電性薄膜を反応性イオンプレー
ティングによって形成するにあたり、真空室内にＡｒガ
スを６〜１０×１０＾−＾３ｓｃｃｍ／ｌおよびＯ＿２
ガスを２．５〜１０×１０＾−＾３ｓｃｃｍ／ｌの範囲
で導入することを特徴とするＩＴＯ透明導電性フィルム
の高速製造方法。(1) When forming an ITO transparent conductive thin film on the surface of a plastic film moving at a high speed of 5 m/min or more by reactive ion plating, Ar gas was introduced into the vacuum chamber at 6 to 10 x 10^-^3 sccm/l and O_2
A high-speed production method for an ITO transparent conductive film, characterized in that gas is introduced in a range of 2.5 to 10 x 10^-^3 sccm/l.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14512288A JP2624778B2 (en) | 1988-06-13 | 1988-06-13 | High-speed production method of ITO transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14512288A JP2624778B2 (en) | 1988-06-13 | 1988-06-13 | High-speed production method of ITO transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01313810A true JPH01313810A (en) | 1989-12-19 |
| JP2624778B2 JP2624778B2 (en) | 1997-06-25 |
Family
ID=15377907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14512288A Expired - Fee Related JP2624778B2 (en) | 1988-06-13 | 1988-06-13 | High-speed production method of ITO transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2624778B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5013416A (en) * | 1986-03-12 | 1991-05-07 | Tobi Col, Ltd. | Process for manufacturing transparent, conductive film |
| KR100736664B1 (en) * | 2004-11-25 | 2007-07-06 | 샌트랄 글래스 컴퍼니 리미티드 | Substrate with ITO transparent conductive film and method for producing same |
-
1988
- 1988-06-13 JP JP14512288A patent/JP2624778B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5013416A (en) * | 1986-03-12 | 1991-05-07 | Tobi Col, Ltd. | Process for manufacturing transparent, conductive film |
| KR100736664B1 (en) * | 2004-11-25 | 2007-07-06 | 샌트랄 글래스 컴퍼니 리미티드 | Substrate with ITO transparent conductive film and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2624778B2 (en) | 1997-06-25 |
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