JPS60233816A - Thin film formation and device therefor - Google Patents
Thin film formation and device thereforInfo
- Publication number
- JPS60233816A JPS60233816A JP8770584A JP8770584A JPS60233816A JP S60233816 A JPS60233816 A JP S60233816A JP 8770584 A JP8770584 A JP 8770584A JP 8770584 A JP8770584 A JP 8770584A JP S60233816 A JPS60233816 A JP S60233816A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film
- bath
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は薄膜形成方法および薄膜形成装置に関し、詳し
くは、たとえば５ｉＯＩ２膜など、絶縁膜の形成にとく
に好適な薄膜形成方法および薄膜形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film forming method and a thin film forming apparatus, and more particularly to a thin film forming method and a thin film forming apparatus particularly suitable for forming an insulating film such as a 5iOI2 film.
従来、基板上に薄膜を堆積しながら堆積膜表面を平坦化
する方法としては特公昭５６−２１８３６に記載のよう
にバイアススパッタ法が知られている。Conventionally, as a method for flattening the surface of a deposited film while depositing a thin film on a substrate, a bias sputtering method is known as described in Japanese Patent Publication No. 56-21836.
この方法によって薄膜を形成する場合の好適な真−空度
は、カソードに平板型電極を用いた場合１０−”Ｔｏｒ
ｒ台、プレーナマグネトロン型電極を用いた場合１０−
”Ｔｏｒｒ台などであった。ところが、基板に急峻な凹
凸がある場合薄膜の源となる粒子の平均自由工程は長い
ほうが好適で、この真空度は高いほど良い。前述の電極
を用いた場合粒子の平均自由工程はそれぞれ数圃と数１
０ｍｎであり、基板上の凹凸のうち深い溝の中に均一な
薄膜を形成するには限界があった。A suitable degree of vacuum when forming a thin film by this method is 10-" Tor when a flat plate electrode is used as the cathode.
When using a planar magnetron type electrode, 10-
However, if the substrate has steep irregularities, the longer the mean free path of the particles that form the source of the thin film, the better, and the higher the degree of vacuum, the better. The mean free path of is several fields and several 1, respectively.
0 mm, and there was a limit to forming a uniform thin film in deep grooves among the irregularities on the substrate.
本発明の目的は、基板上に急峻な凹凸があ名湯合に於て
も、堆積膜表面を平坦にしてかつ均質な薄膜を形成する
ことのできる薄膜形成方法および薄膜形成装置を提供す
ることである。An object of the present invention is to provide a thin film forming method and a thin film forming apparatus that can flatten the surface of a deposited film and form a homogeneous thin film even when a substrate has steep irregularities. It is.
基板上に急峻な凹凸がある場合に於ても堆積膜表面を平
坦にしてかつ均質な薄膜を形成するためには、薄膜の源
となる粒子の平均自由工程が長いほうが好ましく、薄膜
を形成する雰囲気である真空度は高いほうが良い。In order to flatten the surface of the deposited film and form a homogeneous thin film even when there are steep irregularities on the substrate, it is preferable that the mean free path of the particles that form the thin film is long. The higher the degree of vacuum, which is the atmosphere, the better.
本発明においては薄膜の供給源および堆積膜表面の平坦
化手段としてマイクロ波放電やグロー放電などを用い、
これらを基板から離れて局在させ基板表面の真空度を高
める。また堆積する薄膜が特に絶縁膜である場合基板に
入射する粒子の電荷による基板のチャージアップ、また
基板の材質が場所によって異なる場合の場所によるチャ
ージアップの違いなどを抑制し、これらの電荷を中和、
あるいは一定電位に保つ手段を備えている。In the present invention, microwave discharge, glow discharge, etc. are used as a thin film supply source and as a means for flattening the surface of the deposited film.
These are localized away from the substrate to increase the degree of vacuum on the substrate surface. In addition, when the thin film to be deposited is an insulating film, it suppresses the charge-up of the substrate due to the charge of particles incident on the substrate, and when the material of the substrate differs depending on the location, it suppresses the difference in charge-up depending on the location, and neutralizes these charges. sum,
Alternatively, it is equipped with means for maintaining a constant potential.
以下、本発明の実施例を第１図により説明する。 Embodiments of the present invention will be described below with reference to FIG.
反応容器となる真空槽１は、ガス導入口２３゜２４．３
１．排気口２を備え、さらに基板１２に膜を堆積するた
めのマイクロ波イオン源４および基板上に堆積した膜の
一部をエツチングしその表面を平坦化するためのホット
フィラメント型イオン源５を独立して有している。また
基板の表面電荷を中和し基板を一定電位に保つために基
板には基板電極１０を介して高周波電源１４によって高
周波電圧を印加する。The vacuum chamber 1 serving as the reaction vessel has a gas inlet port of 23°24.3.
1. It is equipped with an exhaust port 2, and is further equipped with an independent microwave ion source 4 for depositing a film on the substrate 12 and a hot filament type ion source 5 for etching a part of the film deposited on the substrate and flattening its surface. I have it. Further, a high frequency voltage is applied to the substrate by a high frequency power source 14 via the substrate electrode 10 in order to neutralize the surface charge of the substrate and maintain the substrate at a constant potential.
以下Ｓｉｎ、Ｊｌ膜を基板１２に形成する場合を例に用
いて説明する。まず排出口２を介して真空槽２内をｌＸ
ｌ０−’Ｔｏｒｒ程度にまで排気する。The following will explain the case where a Sin, Jl film is formed on the substrate 12 as an example. First, the inside of the vacuum chamber 2 is
Evacuate to about 10-'Torr.
次に上記マイクロ波イオン源４に周波数２．４５ＧＨｚ
のマイクロ波電力を印加し、さらに上記ガス導入口２３
．２４からモノシラン（ＳｉＨ４）と酸素（ＯＱ）を導
入するとともに、マイクロ波放電を発生してＳｉＨ４と
ＯｓＩを反応させ、ＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐ
ｏｒ Ｄｅｐｏｓｉｔｉｏｎ）によって基板１２上に５
ｉｎＩ２膜を堆積した。一方上記ガス導入口３１からは
アル、ボン（Ａｒ）を導入し、ホットフィラメント型イ
オン源５に電力を印加してＡｒイオンを発生させ、グリ
ッド１３によって加速して得られたＡｒイオンビームを
、基板１２に照射して、基板１２に堆積したＳ ｉ Ｏ
１２膜の一部をエツチングして表面の平坦化を行なった
。なお基板１２は内部を水冷した基板電極１ｏに取り付
け、高周波電源１４によって基板電極１０を介して周波
数１３．５６ Ｍ Ｈｚの高周波電圧を印加するととも
に回転させた。Next, a frequency of 2.45 GHz is applied to the microwave ion source 4.
microwave power is applied, and the gas inlet 23 is
．． Monosilane (SiH4) and oxygen (OQ) are introduced from No. 24, and a microwave discharge is generated to react SiH4 and OsI, resulting in CVD (Chemical Vapor Vaping).
or Deposition) on the substrate 12.
An inI2 film was deposited. On the other hand, Al and Bon (Ar) are introduced from the gas inlet 31, power is applied to the hot filament type ion source 5 to generate Ar ions, and the resulting Ar ion beam is accelerated by the grid 13. S i O deposited on the substrate 12 by irradiating the substrate 12
A part of the No. 12 film was etched to flatten the surface. The substrate 12 was attached to a substrate electrode 1o whose interior was water-cooled, and was rotated while applying a high frequency voltage of 13.56 MHz through the substrate electrode 10 by a high frequency power source 14.
この様にした結果、従来のバイアススパッタ法より高真
空度で薄膜を形成でき、薄膜として堆積する粒子の平均
自由工程が長くなることにより基板上にある凹凸の深い
溝の中にも均質な膜を表面を平坦にして形成できた。As a result, thin films can be formed in a higher vacuum than conventional bias sputtering methods, and the mean free path of the particles deposited as a thin film becomes longer, allowing a homogeneous film to be formed even in deep grooves on the substrate. could be formed with a flat surface.
上記装置に於て、真空槽内のガス圧力５×１０−’ Ｔ
ｏｒｒ 、基板１２の中心とマイクロ波イオン源４およ
びホットフィラメント型イオン源の間隙を、いずれも１
５Ｃ１１とし膜形成中における薄膜の堆積量に対するエ
ツチング量の割合を３０％とし堆積速度３００Ａ／分で
パターンを切ったシリコンウェハにＳ ｉ ０，２膜を
１μｍ形成した。In the above device, the gas pressure in the vacuum chamber is 5×10-'T
orr, the gap between the center of the substrate 12 and the microwave ion source 4 and hot filament type ion source is 1
A Si 0,2 film of 1 μm thickness was formed on a patterned silicon wafer using 5C11 at a deposition rate of 300 A/min, with the ratio of the amount of etching to the amount of thin film deposited during film formation being 30%.
このＳ ｉ Ｏ１２膜の膜質をＮＨ４Ｆ（４０％）二Ｈ
Ｆ（５０％）＝７：１の２５℃のエツチング液によって
調べた。その結果１幅１μｍ、深さ２μｍの溝内におい
てもＳｉｎ、のエツチング速度は平坦部とほぼ同じで１
２００Ａ／分であった。The film quality of this SiO12 film is NH4F (40%) diH.
It was investigated using an etching solution of F (50%) = 7:1 at 25°C. As a result, even in a groove with a width of 1 μm and a depth of 2 μm, the etching rate of Sin is almost the same as that of a flat part.
It was 200A/min.
ただし、基板番；高周波電圧を印加しない場合において
は上記と同一の溝内に於て一部エッチング速度が大きい
領域が見られた。この原因としては、ホットフィラメン
ト型イオン源による堆積膜表面のエツチングがチャージ
アップの影響のため均一にされなかったためと考えられ
る。However, in the case where no high-frequency voltage was applied to the substrate, some regions where the etching rate was high were observed in the same grooves as above. The reason for this is thought to be that the etching of the surface of the deposited film by the hot filament ion source was not uniform due to the influence of charge-up.
本発明による装置及び薄膜の堆積方法は基板上の凹凸が
ある場合基板上に均質な薄膜を形成できる効果がある。The apparatus and thin film deposition method according to the present invention are effective in forming a homogeneous thin film on a substrate even if the substrate has irregularities.
また基板に薄膜形成中に高周波電圧を印加し、基板電位
を一定に保つことは、ゲート耐圧劣化、しきい値電圧変
動など電界効果トランジスタへのダメージ低減にも効果
があった。Furthermore, applying a high-frequency voltage to the substrate while forming a thin film and keeping the substrate potential constant was effective in reducing damage to the field-effect transistor, such as gate breakdown voltage deterioration and threshold voltage fluctuation.
以上５ｉｎＩ２膜の形成を中心に説明してきたが本発明
はこれに限定されることなく、Ｓｉｎ、膜以外の他の絶
縁膜、金属膜、合金膜についても適用できる。またガス
にはＡ ｒ 、 Ｓ ｉ Ｈ４ｔ Ｏ１２を用いたが他
の不活性ガスや反応ガスを用いることなど同業者であれ
ば特許請求の範囲を逸脱することなくいろいろな変形が
可能であることは明らかである。Although the explanation has been given above mainly on the formation of a 5inI2 film, the present invention is not limited thereto, and can also be applied to insulating films other than Sin and films, metal films, and alloy films. Furthermore, although A r and S i H4t O12 are used as the gases, it is understood that various modifications can be made without departing from the scope of the claims by those skilled in the art, such as using other inert gases or reactive gases. it is obvious.
第１図は本発明の装置及び膜形成方法を説明するための
図である。
ｌ・・・真空槽、２・・・排気口、３・・・サセプタ、
４・・・マイクロ波イオン源、５・・・ホットフィラメ
ント型イオン源、１１・・・シールド、１２・・・基板
、１３・・・石英、１４・・・高周波電源、２１・−・
マグネット、２２・・・石英管、２３，２４，３１・・
・ガス導入口、３２・・・マグネット、３３・・・グリ
ッド。
第１図
第１頁の続き
＠発明者奥平 定之
国分寺市東恋ケ窪１丁目２８幡地 株式会社日立製作所
中央研究所内FIG. 1 is a diagram for explaining the apparatus and film forming method of the present invention. l...Vacuum chamber, 2...Exhaust port, 3...Susceptor,
4... Microwave ion source, 5... Hot filament type ion source, 11... Shield, 12... Substrate, 13... Quartz, 14... High frequency power supply, 21...
Magnet, 22...Quartz tube, 23, 24, 31...
・Gas inlet, 32...Magnet, 33...Grid. Figure 1 Continued from page 1 @ Inventor Sadano Okuhira 1-28 Higashi Koigakubo, Kokubunji City Hitachi, Ltd. Central Research Laboratory
Claims (1)
の堆積と、鼓膜を堆積する手段とは独立して設けられた
上記膜を粒子線によって照射する手段による鼓膜への粒
子線の照射を交互に行なうことにより、該基板上に所望
の薄膜を形成する方法に於て、該基板が常にプラズマの
照射を受ける様にして薄膜を形成することを特徴とする
薄膜形成方法。 ２、真空槽内に置かれた基板上へ膜を堆積する手段と、
鼓膜を堆積する手段とは独立して設けられた鼓膜へ粒子
を照射して鼓膜をエツチングする手段と、該基板を設置
するサセプタに高周波電力あるいは直流電圧を印加する
手段を少なくとも備えたことを特徴とする薄膜形成装置
。[Claims] 1. Deposition of a film on the substrate using a means for depositing a film on the substrate, and irradiation of the film provided independently of the means for depositing the eardrum with a particle beam. A method for forming a desired thin film on the substrate by alternately irradiating the eardrum with a particle beam using means, characterized in that the thin film is formed so that the substrate is constantly irradiated with plasma. A method for forming a thin film. 2. means for depositing a film onto a substrate placed in a vacuum chamber;
It is characterized by comprising at least a means for etching the eardrum by irradiating particles onto the eardrum, which is provided independently of the means for depositing the eardrum, and a means for applying high frequency power or DC voltage to a susceptor on which the substrate is installed. Thin film forming equipment.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770584A JPS60233816A (en) | 1984-05-02 | 1984-05-02 | Thin film formation and device therefor |
| US06/655,438 US4599135A (en) | 1983-09-30 | 1984-09-28 | Thin film deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770584A JPS60233816A (en) | 1984-05-02 | 1984-05-02 | Thin film formation and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60233816A true JPS60233816A (en) | 1985-11-20 |
Family
ID=13922328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8770584A Pending JPS60233816A (en) | 1983-09-30 | 1984-05-02 | Thin film formation and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60233816A (en) |
-
1984
- 1984-05-02 JP JP8770584A patent/JPS60233816A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10312055B2 (en) | Method of depositing film by PEALD using negative bias | |
| US4599135A (en) | Thin film deposition | |
| KR100416308B1 (en) | Plasma process device | |
| JP3076367B2 (en) | Plasma processing equipment | |
| JPH0633453B2 (en) | Equipment for depositing thin layers on substrates by cathodic sputtering | |
| JPH0635323B2 (en) | Surface treatment method | |
| JP3499104B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP3319285B2 (en) | Plasma processing apparatus and plasma processing method | |
| JPH02281734A (en) | Treating method of surface by plasma | |
| JPS6136589B2 (en) | ||
| JP3520577B2 (en) | Plasma processing equipment | |
| JP2003077904A (en) | Apparatus and method for plasma processing | |
| JP2626339B2 (en) | Thin film forming equipment | |
| JPS60233816A (en) | Thin film formation and device therefor | |
| JPH06330305A (en) | Film forming method by sputtering | |
| JPH09263948A (en) | Formation of thin film by using plasma, thin film producing apparatus, etching method and etching device | |
| US3484358A (en) | Method and apparatus for reactive sputtering wherein the sputtering target is contacted by an inert gas | |
| JP3327618B2 (en) | Plasma processing equipment | |
| JP3368743B2 (en) | Plasma processing apparatus and plasma processing method | |
| KR102691272B1 (en) | Method of depositing film by peald using negative bias | |
| JP2004349717A (en) | Plasma-etching trearment apparatus | |
| JPH09223672A (en) | Method and device for plasma treatment | |
| JPH0340422A (en) | Film formation device | |
| JPH01149958A (en) | Sputtering device | |
| JPH07273089A (en) | Apparatus and method for plasma treatment |