JP2574388B2 - Light emitting diode and method of forming electrode thereof - Google Patents
Light emitting diode and method of forming electrode thereofInfo
- Publication number
- JP2574388B2 JP2574388B2 JP63113133A JP11313388A JP2574388B2 JP 2574388 B2 JP2574388 B2 JP 2574388B2 JP 63113133 A JP63113133 A JP 63113133A JP 11313388 A JP11313388 A JP 11313388A JP 2574388 B2 JP2574388 B2 JP 2574388B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- recess
- plating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Description
【発明の詳細な説明】 産業上の利用分野 この発明はリードレス型表面実装用発光ダイオードお
よびその電極の形成方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a leadless type light emitting diode for surface mounting and a method for forming electrodes thereof.
従来の技術 従来の表面実装用発光ダイオードの構造を第７図
（ａ），（ｂ）の平面図，断面図に示す。前記発光ダイ
オードの製造方法をとしては、第７図（ｃ）に示すよう
に、まず、表面にNi/Agメッキを施したリードフレーム
１、１′にインサート成形により、高耐熱の熱可塑性樹
脂反射ケース２が形成される。2. Description of the Related Art The structure of a conventional light emitting diode for surface mounting is shown in plan and sectional views of FIGS. 7 (a) and 7 (b). As shown in FIG. 7 (c), a method of manufacturing the light emitting diode is as follows. First, a lead frame 1, 1 'having a Ni / Ag plating on its surface is subjected to insert molding to form a heat-resistant thermoplastic resin reflection plate. Case 2 is formed.
なお、このときの熱可塑性樹脂としては、表面実装時
の加熱に耐えるように熱変形温度が高い液晶ポリマー等
が使用されている。第７図（ａ），（ｂ）に示すよう
に、リードフレーム１に発光ダイオードチップ３を銀
（Ag）ペースト４により固定した後、金（Au）線５によ
りリードフレーム１′と結線される。この後、反射ケー
ス２の内部は発光ダイオードの保護、光の取り出し効率
の向上のために透明エポキシ樹脂６で封止される。反射
ケースの外部のリードフレーム部は、表面実装に対応す
るために、例えば、第７図（ａ），（ｂ）に示すような
形状にカット及びベンドが行われる。電極端子１′から
１へ数10mAの電流を流すことにより発光ダイオードチッ
プ３が発光し、可視発光ランプとして動作する。In addition, as the thermoplastic resin at this time, a liquid crystal polymer or the like having a high heat deformation temperature to withstand heating during surface mounting is used. As shown in FIGS. 7 (a) and 7 (b), after the light emitting diode chip 3 is fixed to the lead frame 1 by silver (Ag) paste 4, it is connected to the lead frame 1 'by a gold (Au) wire 5. . Thereafter, the interior of the reflective case 2 is sealed with a transparent epoxy resin 6 for protecting the light emitting diode and improving light extraction efficiency. The lead frame portion outside the reflection case is cut and bent, for example, into a shape as shown in FIGS. 7A and 7B in order to cope with surface mounting. When a current of several tens of mA flows from the electrode terminals 1 'to 1, the light emitting diode chip 3 emits light and operates as a visible light emitting lamp.
発明が解決しようとする課題 しかし、前記発光ダイオードにおいてはリードフレー
ム1,1′と高耐熱性樹脂反射ケース２との密着力が弱い
ため、反射ケースとリードフレーム間に起因する問題、
たとえば界面からの封止樹脂漏れなどを生じることがあ
る。また、インサート成形を用いるために金型代や製品
単価が高くなるという欠点がある。Problems to be Solved by the Invention However, in the light emitting diode, since the adhesion between the lead frames 1 and 1 'and the high heat resistant resin reflection case 2 is weak, a problem caused between the reflection case and the lead frame.
For example, the sealing resin may leak from the interface. In addition, there is a disadvantage that the cost of the mold and the unit price of the product are increased due to the use of insert molding.
課題を解決するための手段 本発明は前記問題点を解決するために、高耐熱性でメ
ッキ可能な樹脂で反射ケースを射出成形し、前記反射ケ
ースに立体パターンを有するCu/Ni/Agメッキ処理を行う
ことにより配線パターン内蔵反射ケースを形成し、この
配線パターン上に発光ダイオードを搭載したものであ
る。立体パターン形成方法としては、メッキ終了後ダイ
ヤモンドダイシングブレードにより切り溝をいれること
により実施できる。Means for Solving the Problems The present invention solves the above problems by injection-molding a reflection case with a highly heat-resistant and plateable resin, and performing a Cu / Ni / Ag plating process having a three-dimensional pattern on the reflection case. Is carried out to form a reflection case with a built-in wiring pattern, and a light emitting diode is mounted on this wiring pattern. The three-dimensional pattern can be formed by forming a kerf with a diamond dicing blade after plating.
作用 本発明の発光ダイオードにおいて、反射ケースのメッ
キが単に発光ダイオードチップのボンディングのみなら
ず、発光ダイオードチップと発光ダイオード外部との電
気的な接続までを実現するために、従来のような金属板
の成形によるリードフレームが不要となり、また表面実
装用の端子までを同時に形成する。たしがって、リード
フレームと反射ケースの密着不良に関する問題が解決さ
れる。In the light emitting diode of the present invention, the plating of the reflective case is not only for bonding the light emitting diode chip but also for realizing the electrical connection between the light emitting diode chip and the outside of the light emitting diode. A lead frame by molding is not required, and terminals for surface mounting are simultaneously formed. Therefore, the problem of poor adhesion between the lead frame and the reflection case is solved.
実施例１ 第１図（ａ），（ｂ），（ｃ）に完成品形状を平面
図，側面図，断面図で示す。第１図において７は被メッ
キ性を有する熱可塑性樹脂であり、8,9,10に示す斜線部
表面はCu/Ni/Agメッキが施されており、前記メッキはス
ルーホールを通して11,12の電極用メッキ端子と接続さ
れている。メッキランド８では発光ダイオードチップ３
がAgペースト４により固定され、Au線５によりメッキラ
ンド９と結線されている。なおメッキランド8,9の間に
は約0.3mmの幅で下地の熱可塑性樹脂がメッキされてい
ない状態でラインを形成している。この部分が立体絶縁
パターンとなっいる。反射ケースの内部は発光ダイオー
ドの保護、光の取り出し効率の向上のために透明エポキ
シ樹脂６で封止されている。電極用メッキ端子11から12
へ数10mAの電流を流すことにより発光ダイオードチップ
３が発光し、可視発光ランプとして動作する。次に前記
発光ダイオードの製造方法について第２図（ａ），
（ｂ），（ｃ）の工程順図を参照してのべる。Embodiment 1 FIGS. 1 (a), 1 (b), and 1 (c) show a plan view, a side view, and a sectional view of a finished product. In FIG. 1, reference numeral 7 denotes a thermoplastic resin having plating ability, and the surfaces of hatched portions indicated by 8, 9, and 10 are plated with Cu / Ni / Ag, and the plating is performed through the through-holes. Connected to electrode plating terminals. In the plating land 8, the light emitting diode chip 3
Are fixed by an Ag paste 4 and connected to a plating land 9 by an Au wire 5. A line is formed between the plating lands 8 and 9 with a width of about 0.3 mm in a state where the underlying thermoplastic resin is not plated. This part is a three-dimensional insulating pattern. The interior of the reflection case is sealed with a transparent epoxy resin 6 for protecting the light emitting diode and improving light extraction efficiency. Electrode plating terminals 11 to 12
When a current of several tens of mA flows through the light emitting diode chip 3, the light emitting diode chip 3 emits light and operates as a visible light emitting lamp. Next, a method for manufacturing the light emitting diode will be described with reference to FIG.
The process will be described with reference to the process sequence diagrams of FIGS.
第２図（ａ）はメッキ前の射出成形樹脂基板の形状を
示す。熱可塑性のメッキ可能な樹脂としては耐熱性を考
慮して液晶ポリマーを用いる。成形基板は１個の樹脂基
板に多数個の発光ダイオード用反射ケース部分が形成さ
れている。次に、第２図（ｂ）に示したようにメッキの
マスキング用レジストパターン13を形成する。第２図
（ｂ）の天面は凹部を有するため、立体レジストパター
ンとなっているが、このパターン形成方法としては、光
硬化性レジストを用いると共に、マスキングパターンを
形成すべき樹脂成形体と雌雄関係の形状を有する透光性
の型を用いて露光し、立体的なマスキングパターンを完
成する方法が利用可能である。第２図（ｂ）の裏面は平
面であるため、テーピング等によってもマスキングパタ
ーンを作成することができる。FIG. 2A shows the shape of the injection-molded resin substrate before plating. As the thermoplastic plating resin, a liquid crystal polymer is used in consideration of heat resistance. The molded substrate has a large number of light emitting diode reflective cases formed on one resin substrate. Next, as shown in FIG. 2B, a plating masking resist pattern 13 is formed. Since the top surface of FIG. 2 (b) has a concave portion, it has a three-dimensional resist pattern. As a pattern forming method, a photo-curable resist is used. A method of exposing using a translucent mold having a related shape to complete a three-dimensional masking pattern is available. Since the back surface in FIG. 2B is a flat surface, a masking pattern can be created by taping or the like.
次に、洗浄→化学エッチング→湿潤化→触媒付与→無
電解Cuメッキ→レジスト除去→電気Cuメッキ→電気Niメ
ッキ→Agメッキ処理の順に工程処理を施す。この結果、
第２図（ｃ）に示すような立体配線樹脂基板が形成され
る。第２図（ｃ）において14はレジスト除去後の絶縁パ
ターンを示す。Next, process processes are performed in the order of cleaning → chemical etching → wetting → catalyst → electroless Cu plating → resist removal → electric Cu plating → electric Ni plating → Ag plating. As a result,
A three-dimensional wiring resin substrate as shown in FIG. 2 (c) is formed. In FIG. 2C, reference numeral 14 denotes an insulating pattern after removing the resist.
次に第１図に示すように、前記樹脂基板のメッキラン
ド８に発光ダイオードチップ３をAgペースト４により固
定した後、Au線５によりメッキランド９と結線する。次
に発光ダイオードチップ３の固定された反射ケースの内
部は透明エポキシ樹脂６で封止される。最後に第２図
（ｃ）の破線16に沿ってダイヤモンドダイシングブレー
ドでカットし、個々の発光ダイオードに分割する。この
時スルーホール15も２分割される。本実施例において
は、１個の樹脂基板から20個の発光ダイオードが作成さ
れることになる。前記の方法で作成した発光ダイオード
は従来のインサート成形法による発光ダイオードと比較
して、成形金型代、製品単価とも安くなり、またリード
フレームと反射ケース間における封止樹脂漏れ等を解決
できる。Next, as shown in FIG. 1, the light emitting diode chip 3 is fixed to the plating land 8 of the resin substrate with an Ag paste 4 and then connected to the plating land 9 by an Au wire 5. Next, the inside of the reflection case in which the light emitting diode chip 3 is fixed is sealed with a transparent epoxy resin 6. Finally, the substrate is cut by a diamond dicing blade along a broken line 16 in FIG. 2 (c), and divided into individual light emitting diodes. At this time, the through hole 15 is also divided into two. In this embodiment, 20 light emitting diodes are produced from one resin substrate. The light emitting diode prepared by the above method can reduce the cost of the molding die and the product price as compared with the light emitting diode formed by the conventional insert molding method, and can solve the leakage of the sealing resin between the lead frame and the reflection case.
実施例２ 第３図（ａ），（ｂ），（ｃ）に切り溝により立体パ
ターンを形成して作成した発光ダイオードを平面図，側
面図，断面図で示す。Example 2 FIGS. 3 (a), 3 (b) and 3 (c) show a plan view, a side view and a sectional view of a light-emitting diode formed by forming a three-dimensional pattern by a cut groove.
本実施例における発光ダイオードが実施例１の発光ダ
イオードと異なる点は、立体絶縁パターンが第３図に示
すような切り溝17によって構成されている点であり、そ
の他の構造と動作については実施例１と同様である。次
に前記発光ダイオードの製造方法について述べる。The difference between the light emitting diode of the present embodiment and the light emitting diode of the first embodiment is that the three-dimensional insulating pattern is constituted by the cut grooves 17 as shown in FIG. Same as 1. Next, a method for manufacturing the light emitting diode will be described.
まず、第２図（ａ）の射出成形樹脂基板の裏面のみ実
施例１と同様にテーピング等によりマスキングを行な
う。First, masking is performed by taping or the like on the back surface of the injection-molded resin substrate of FIG.
次に実施例１と同様のメッキ処理を行った後、第４図
に示すような切り溝17をダイヤモンドダイシングブレー
ドにより形成する。その後は、実施例１と同様に発光ダ
イオードチップボンド→Au線ボンド→エポキシ樹脂封止
→カット分割を行うことにより、第３図の発光ダイオー
ドが作成される。本実施例においては、実施例１と比較
してマスキング設備や工数削減の効果がある。Next, after performing the same plating treatment as in the first embodiment, a cutting groove 17 as shown in FIG. 4 is formed by a diamond dicing blade. Thereafter, the light emitting diode chip bond → Au line bond → epoxy resin sealing → cut division is performed in the same manner as in the first embodiment, whereby the light emitting diode shown in FIG. 3 is formed. The present embodiment has an effect of reducing masking equipment and man-hours as compared with the first embodiment.
実施例３ 第５図は第４図の樹脂基板の裏面マスキング形状とカ
ット分割方法を変えることにより作成した一体形多連発
光ダイオードを示す。このように本発明の応用により新
規の金型を作成することなく、カッティング方法を変更
することにより任意の一体形多連発光ダイオードを作成
できる。Embodiment 3 FIG. 5 shows an integrated multiple light emitting diode produced by changing the masking shape of the back surface of the resin substrate of FIG. 4 and the cutting division method. As described above, an arbitrary multiple light emitting diode can be produced by changing the cutting method without producing a new mold by applying the present invention.
実施例４ 第６図は反射ケースの凹部をパラポラ形状にして指向
性を高くしたものである。このように、本発明の応用に
よりインサート成形を用いた従来品と比較して種々の形
状のものを容易に作成でき、成形金型代や製品単価も安
いため、表面実装用カスタム発光ダイオードの作成を行
ううえで大きなメリットがある。Embodiment 4 FIG. 6 shows a case in which the concave portion of the reflection case is formed in a parapolar shape to enhance the directivity. In this way, by applying the present invention, it is possible to easily produce various shapes in comparison with the conventional product using insert molding, and the molding die cost and the product unit price are low, so that the production of a custom light emitting diode for surface mounting. There is a great advantage in performing
発明の効果 以上のように本発明によれば、被メッキ性を有する樹
脂で反射ケースを構成し、前記反射ケースに立体パター
ンを有するメッキ処理を施した後、発光ダイオードチッ
プを搭載してリードレスの発光ダイオードとすることに
より反射ケースとリードフレーム間における封止樹脂漏
れ等に関する問題を解決できる。さらに、１個の樹脂基
板に多数個の発光ダイオード用反射ケースを形成し、カ
ット分割方法を変えることにより任意の多連発光ダイオ
ードを作成できる。また、インサート成形を用いた従来
品と比較して金型代や製品単価が安くなるため、表面実
装用カスタム発光ダイオードの作成を行ううえで大きな
メリットがある。Effects of the Invention As described above, according to the present invention, a reflective case is made of a resin having plating properties, and after plating the reflective case with a three-dimensional pattern, a light emitting diode chip is mounted on the reflective case. By using the light emitting diode described above, it is possible to solve the problem of leakage of the sealing resin between the reflection case and the lead frame. Further, by forming a large number of light emitting diode reflection cases on one resin substrate and changing the cut division method, an arbitrary multiple light emitting diode can be produced. Also, since the cost of the mold and the unit price of the product are lower than those of a conventional product using insert molding, there is a great merit in producing a custom light emitting diode for surface mounting.
第１図（ａ），（ｂ），（ｃ）は本発明の実施例１にお
ける発光ダイオード平面図，側面図，断面図、第２図
（ａ），（ｂ），（ｃ）は実施例１における各製造段階
における工程順図、第３図（ａ），（ｂ），（ｃ）は本
発明の実施例２における発光ダイオード平面図，側面
図，断面図、第４図は実施例２の製造段階における成形
樹脂基板の状態図、第５図は実施例３における一体形多
連発光ダイオード外形図、第６図は実施例４におけるパ
ラボラ形発光ダイオード外形図、第７図（ａ），
（ｂ），（ｃ）は従来の発光ダイオードの平面図，側断
面図製造段階での状態平面図である。 1,1′……リードフレーム、２……反射ケース、３……
発光ダイオードチップ、４……Agペースト,5……Au線、
６……透明エポキシ樹脂、７……被メッキ性を有する樹
脂、8,9……ボンディング用メッキランド、10……メッ
キ面、11,12……電極用メッキ端子、13……レジストパ
ターン、14……絶縁パターン、15……スルーホール、16
……カッティングライン、17……切り溝。1 (a), (b) and (c) are a plan view, a side view and a cross-sectional view of a light emitting diode according to Embodiment 1 of the present invention, and FIGS. 2 (a), (b) and (c) are embodiments. 1A, 1B, and 3C are plan views, side views, and cross-sectional views of a light-emitting diode according to a second embodiment of the present invention, and FIG. 5 is a state diagram of the molded resin substrate at the stage of manufacturing, FIG. 5 is an outline view of an integrated multiple light emitting diode in Embodiment 3, FIG. 6 is an outline view of a parabolic light emitting diode in Embodiment 4, FIG.
(B) and (c) are a plan view and a side sectional view of a conventional light emitting diode, which is a state plan view at a manufacturing stage. 1, 1 '... lead frame, 2 ... reflective case, 3 ...
Light emitting diode chip, 4… Ag paste, 5… Au wire,
6 ... Transparent epoxy resin, 7 ... Plastic resin, 8,9 ... Plating land for bonding, 10 ... Plating surface, 11,12 ... Plating terminal for electrode, 13 ... Resist pattern, 14 …… Insulation pattern, 15 …… Through hole, 16
... cutting line, 17 ... cut groove.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−86748（ＪＰ，Ａ) 特開 昭60−171747（ＪＰ，Ａ) 特開 昭56−101183（ＪＰ，Ａ) 実開 昭63−38334（ＪＰ，Ｕ) 実開 昭56−137466（ＪＰ，Ｕ) 実開 昭62−4157（ＪＰ，Ｕ) 実開 昭60−179058（ＪＰ，Ｕ) 特公 昭60−43040（ＪＰ，Ｂ１) 特公 昭56−44591（ＪＰ，Ｂ１) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-58-86748 (JP, A) JP-A-60-171747 (JP, A) JP-A-56-101183 (JP, A) 38334 (JP, U) Japanese Utility Model Showa 56-137466 (JP, U) Japanese Utility Model Showa 62-4157 (JP, U) Japanese Utility Model Showa 60-179058 (JP, U) Tokiko 56-44591 (JP, B1)
Claims (3)
応する側面に前記表面から裏面まで貫通した溝とを有す
るメッキが可能な樹脂で形成された一体成形の反射ケー
スに、前記凹部の底面から側面の前記溝を通って裏面ま
で連続して接続された立体パターンのメッキ電極部が、
前記凹部を含む表面と裏面においてそれぞれに分離され
た一対の形状で設けられ、前記凹部の底面の一方の前記
メッキ電極部に発光ダイオードチップが搭載され、前記
凹部の底面の他方の前記メッキ電極部と前記発光ダイオ
ードチップとが金属細線で結線され、さらに、前記凹部
の表面が平らになるように樹脂で封止されていることを
特徴とする発光ダイオード。1. An integrally molded reflection case formed of a resin that can be plated and having a recess whose inner wall surface is inclined on the front surface and a groove penetrating from the front surface to the back surface on a pair of corresponding side surfaces, the recess is provided. A three-dimensional pattern plating electrode portion continuously connected from the bottom surface to the back surface through the groove on the side surface,
A light emitting diode chip is mounted on one of the plated electrode portions on the bottom surface of the recess, and the other of the plated electrode portions on the bottom surface of the recess is provided in a pair of shapes separated from each other on the front surface and the back surface including the recess. And the light emitting diode chip is connected with a thin metal wire, and further, is sealed with a resin so that the surface of the concave portion becomes flat.
面にマトリックス状に配置された複数個の凹部と、一方
向の前記凹部間に表面から裏面に貫通するスルーホール
とを有する一体成形の基板を形成する工程と、前記基板
表面にレジストを塗布し、前記基板の表面と雌雄関係の
形状とするマスクを用いて露光し、現像により、一連の
前記凹部を通過する第１のマスキングパターンを形成す
る工程と、前記基板の裏面に、第２のマスキングパター
ンを形成する工程と、メッキ処理工程を施し、メッキ電
極を形成する工程と、前記第１と第２のマスキングパタ
ーンを除去する工程と、前記凹部の底面の一方の前記メ
ッキ電極に発光ダイオードを固定し、前記発光ダイオー
ドと前記凹部の底面の他方の前記メッキ電極とを金属細
線で結線する工程と、前記凹部を樹脂で封止する工程
と、前記基板を、一連の前記スルーホールを通過する方
向と、同方向に直角で前記凹部間を通過する方向とに切
断する工程とを備えたことを特徴とする発光ダイオード
の製造方法。2. An integrally molded resin having a plurality of recesses arranged in a matrix on the front surface and a through hole penetrating from the front surface to the back surface between the recesses in one direction by injection molding of a resin capable of being plated. A step of forming a substrate, applying a resist on the surface of the substrate, exposing using a mask having a shape of a male-female relationship with the surface of the substrate, and developing, by developing, a first masking pattern passing through the series of recesses. Forming, forming a second masking pattern on the back surface of the substrate, performing a plating process, forming a plating electrode, and removing the first and second masking patterns. Fixing a light emitting diode to one of the plating electrodes on the bottom surface of the recess, and connecting the light emitting diode and the other plating electrode on the bottom surface of the recess with a thin metal wire. Sealing the recess with a resin, and cutting the substrate in a direction passing through the series of through holes and in a direction perpendicular to the same direction and passing between the recesses. A method for manufacturing a light emitting diode, which is characterized by the following.
面にマトリックス状に配置された複数個の凹部と、一方
向の前記凹部間に表面から裏面に貫通するスルーホール
とを有する一体成形の基板を形成する工程と、前記基板
の裏面にマスキングパターンを形成する工程と、メッキ
処理を施し、メッキ電極を形成する工程と、前記マスキ
ングパターンを除去する工程と、前記基板の表面に、一
連の前記凹部を通過する切り溝を入れ、前記メッキ電極
を凹部を含む表面で分離させる工程と、前記凹部の底面
の分離された一方の前記メッキ電極に発光ダイオードを
固定し、前記発光ダイオードと前記凹部の底面の分離さ
れた他方の前記メッキ電極とを金属細線で結線する工程
と、前記凹部を樹脂で封止する工程と、前記基板を一連
の前記スルーホールを通過する方向と、同方向に直角で
前記凹部間を通過する方向とに切断する工程とを備えた
ことを特徴とする発光ダイオードの製造方法。3. An integrally molded resin injection mold having a plurality of recesses arranged in a matrix on the front surface and a through hole penetrating from the front surface to the back surface between the recesses in one direction. A step of forming a substrate, a step of forming a masking pattern on the back surface of the substrate, a step of performing plating, a step of forming a plating electrode, a step of removing the masking pattern, and a series of steps on the surface of the substrate. Forming a kerf that passes through the recess, separating the plating electrode at the surface including the recess, fixing a light emitting diode to one of the separated plating electrodes on the bottom surface of the recess, the light emitting diode and the recess Connecting the other of the separated plating electrodes on the bottom surface with a thin metal wire, sealing the recess with a resin, and connecting the substrate to the series of through holes. The direction passing through the manufacturing method of the light-emitting diodes, characterized in that a step of cutting into a direction that passes between the recesses at a right angle in the same direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113133A JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113133A JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01283883A JPH01283883A (en) | 1989-11-15 |
| JP2574388B2 true JP2574388B2 (en) | 1997-01-22 |
Family
ID=14604385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63113133A Expired - Lifetime JP2574388B2 (en) | 1988-05-10 | 1988-05-10 | Light emitting diode and method of forming electrode thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2574388B2 (en) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2525554Y2 (en) * | 1990-11-19 | 1997-02-12 | サンケン電気株式会社 | Light emitting display |
| US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
| JPH0497366U (en) * | 1991-01-17 | 1992-08-24 | ||
| JPH04107861U (en) * | 1991-02-28 | 1992-09-17 | サンケン電気株式会社 | light emitting display device |
| JPH0529659A (en) * | 1991-07-23 | 1993-02-05 | Sharp Corp | Side liminous type led lamp and manufacture thereof |
| DE4242842C2 (en) * | 1992-02-14 | 1999-11-04 | Sharp Kk | Light-emitting component for surface mounting and method for its production |
| JPH06207772A (en) * | 1993-01-08 | 1994-07-26 | Toshiba Corp | Refrigerator |
| JP3158018B2 (en) * | 1995-07-17 | 2001-04-23 | シャープ株式会社 | Horizontal light emitting LED and method for manufacturing the same |
| DE19746893B4 (en) * | 1997-10-23 | 2005-09-01 | Siemens Ag | Optoelectronic component with heat sink in the base part and method for the production |
| TW408497B (en) | 1997-11-25 | 2000-10-11 | Matsushita Electric Works Ltd | LED illuminating apparatus |
| WO2000079605A1 (en) * | 1999-06-23 | 2000-12-28 | Citizen Electronics Co., Ltd. | Light emitting diode |
| JP3533345B2 (en) * | 1999-07-13 | 2004-05-31 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP4625997B2 (en) * | 1999-07-22 | 2011-02-02 | 日亜化学工業株式会社 | Light emitting diode |
| JP2002324919A (en) | 2001-02-26 | 2002-11-08 | Sharp Corp | Light emitting diode and method of manufacturing the same |
| JP2009135535A (en) * | 2003-02-25 | 2009-06-18 | Kyocera Corp | Multipiece substrate, package and light emitting device |
| JP4572312B2 (en) * | 2004-02-23 | 2010-11-04 | スタンレー電気株式会社 | LED and manufacturing method thereof |
| JP2006210724A (en) * | 2005-01-28 | 2006-08-10 | Sumitomo Electric Ind Ltd | Injection molded circuit component, window frame and package for light emitting diode using same, and manufacturing method the component |
| JP4367457B2 (en) | 2006-07-06 | 2009-11-18 | パナソニック電工株式会社 | Silver film, silver film manufacturing method, LED mounting substrate, and LED mounting substrate manufacturing method |
| JP5207671B2 (en) * | 2007-06-26 | 2013-06-12 | パナソニック株式会社 | Semiconductor light emitting device package and semiconductor light emitting device |
| JP2008153698A (en) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Surface-mounting photoelectric conversion device |
| JP5379503B2 (en) * | 2009-02-04 | 2013-12-25 | アピックヤマダ株式会社 | LED package, LED package manufacturing method, and mold |
| JP2016006836A (en) * | 2014-06-20 | 2016-01-14 | 大日本印刷株式会社 | Light emitting diode substrate manufacturing method and lighting device manufacturing method |
| CN111684673B (en) * | 2018-02-16 | 2023-04-18 | 京瓷株式会社 | Multi-chip component housing package and multi-chip optical semiconductor device |
| WO2021261061A1 (en) * | 2020-06-26 | 2021-12-30 | ローム株式会社 | Electronic component and method for manufacturing electronic component |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5886748A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Substrate forming chip carrier group |
| JPS6043040A (en) * | 1983-08-15 | 1985-03-07 | Hitachi Ltd | Cooling air partition plate of rotary electric machine |
| JPS60171747A (en) * | 1984-02-17 | 1985-09-05 | Hitachi Micro Comput Eng Ltd | Semiconductor device |
| JPS6338334U (en) * | 1986-08-27 | 1988-03-11 |
-
1988
- 1988-05-10 JP JP63113133A patent/JP2574388B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01283883A (en) | 1989-11-15 |
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