JP2539359B2 - 半導体装置へのイオンビ−ム加工方法およびその装置 - Google Patents
半導体装置へのイオンビ−ム加工方法およびその装置Info
- Publication number
- JP2539359B2 JP2539359B2 JP60060573A JP6057385A JP2539359B2 JP 2539359 B2 JP2539359 B2 JP 2539359B2 JP 60060573 A JP60060573 A JP 60060573A JP 6057385 A JP6057385 A JP 6057385A JP 2539359 B2 JP2539359 B2 JP 2539359B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- ion beam
- current
- processing
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000010884 ion-beam technique Methods 0.000 title claims description 47
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000012545 processing Methods 0.000 claims description 46
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 16
- 150000002500 ions Chemical group 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010893 electron trap Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60060573A JP2539359B2 (ja) | 1985-03-27 | 1985-03-27 | 半導体装置へのイオンビ−ム加工方法およびその装置 |
KR8602240A KR900005783B1 (en) | 1985-03-27 | 1986-03-26 | Ion beam cutting method and device thereof for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60060573A JP2539359B2 (ja) | 1985-03-27 | 1985-03-27 | 半導体装置へのイオンビ−ム加工方法およびその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61220330A JPS61220330A (ja) | 1986-09-30 |
JP2539359B2 true JP2539359B2 (ja) | 1996-10-02 |
Family
ID=13146134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60060573A Expired - Lifetime JP2539359B2 (ja) | 1985-03-27 | 1985-03-27 | 半導体装置へのイオンビ−ム加工方法およびその装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2539359B2 (ko) |
KR (1) | KR900005783B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
JPH0316125A (ja) * | 1989-03-30 | 1991-01-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4358338A (en) * | 1980-05-16 | 1982-11-09 | Varian Associates, Inc. | End point detection method for physical etching process |
JPS58202038A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | イオンビ−ム加工装置 |
JPS59208830A (ja) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | イオンビ−ム加工方法およびその装置 |
JPS60200529A (ja) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | イオンビ−ムによるエツチング加工方法 |
-
1985
- 1985-03-27 JP JP60060573A patent/JP2539359B2/ja not_active Expired - Lifetime
-
1986
- 1986-03-26 KR KR8602240A patent/KR900005783B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS61220330A (ja) | 1986-09-30 |
KR900005783B1 (en) | 1990-08-11 |
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