JP2539359B2 - 半導体装置へのイオンビ−ム加工方法およびその装置 - Google Patents

半導体装置へのイオンビ−ム加工方法およびその装置

Info

Publication number: JP2539359B2
Authority: JP; Japan
Prior art keywords: semiconductor device; ion beam; current; processing; detected
Prior art date: 1985-03-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP60060573A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61220330A (ja

Inventor

朗嶋瀬

聰原市

博司山口

建興宮内

光雄宇佐美

貴彦高橋

英夫中村

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-27

Filing date

1985-03-27

Publication date

1996-10-02

1985-03-27 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1985-03-27 Priority to JP60060573A priority Critical patent/JP2539359B2/ja

1986-03-26 Priority to KR8602240A priority patent/KR900005783B1/ko

1986-09-30 Publication of JPS61220330A publication Critical patent/JPS61220330A/ja

1996-10-02 Application granted granted Critical

1996-10-02 Publication of JP2539359B2 publication Critical patent/JP2539359B2/ja

2011-10-02 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 50
238000010884 ion-beam technique Methods 0.000 title claims description 47
238000003672 processing method Methods 0.000 title claims description 6
238000012545 processing Methods 0.000 claims description 46
230000001678 irradiating effect Effects 0.000 claims description 9
238000000034 method Methods 0.000 claims description 8
238000001514 detection method Methods 0.000 claims description 7
239000002245 particle Substances 0.000 claims 6
239000000758 substrate Substances 0.000 description 20
239000010410 layer Substances 0.000 description 16
150000002500 ions Chemical group 0.000 description 13
238000010586 diagram Methods 0.000 description 7
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
229910052782 aluminium Inorganic materials 0.000 description 4
230000000694 effects Effects 0.000 description 4
229910004298 SiO 2 Inorganic materials 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
238000010893 electron trap Methods 0.000 description 3
238000000605 extraction Methods 0.000 description 3
238000003754 machining Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
230000001133 acceleration Effects 0.000 description 2
238000002161 passivation Methods 0.000 description 2
235000018734 Sambucus australis Nutrition 0.000 description 1
244000180577 Sambucus australis Species 0.000 description 1
238000011161 development Methods 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
238000004949 mass spectrometry Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
238000005211 surface analysis Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Drying Of Semiconductors (AREA)
Electron Sources, Ion Sources (AREA)

JP60060573A 1985-03-27 1985-03-27 半導体装置へのイオンビ−ム加工方法およびその装置 Expired - Lifetime JP2539359B2 (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP60060573A JP2539359B2 (ja)	1985-03-27	1985-03-27	半導体装置へのイオンビ−ム加工方法およびその装置
KR8602240A KR900005783B1 (en)	1985-03-27	1986-03-26	Ion beam cutting method and device thereof for semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60060573A JP2539359B2 (ja)	1985-03-27	1985-03-27	半導体装置へのイオンビ−ム加工方法およびその装置

Publications (2)

Publication Number	Publication Date
JPS61220330A JPS61220330A (ja)	1986-09-30
JP2539359B2 true JP2539359B2 (ja)	1996-10-02

Family

ID=13146134

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60060573A Expired - Lifetime JP2539359B2 (ja)	1985-03-27	1985-03-27	半導体装置へのイオンビ−ム加工方法およびその装置

Country Status (2)

Country	Link
JP (1)	JP2539359B2 (ko)
KR (1)	KR900005783B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6753253B1 (en) *	1986-06-18	2004-06-22	Hitachi, Ltd.	Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
JPH0316125A (ja) *	1989-03-30	1991-01-24	Mitsubishi Electric Corp	半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4358338A (en) *	1980-05-16	1982-11-09	Varian Associates, Inc.	End point detection method for physical etching process
JPS58202038A (ja) *	1982-05-21	1983-11-25	Hitachi Ltd	イオンビ−ム加工装置
JPS59208830A (ja) *	1983-05-13	1984-11-27	Hitachi Ltd	イオンビ−ム加工方法およびその装置
JPS60200529A (ja) *	1984-03-24	1985-10-11	Mitsubishi Electric Corp	イオンビ−ムによるエツチング加工方法

1985
- 1985-03-27 JP JP60060573A patent/JP2539359B2/ja not_active Expired - Lifetime
1986
- 1986-03-26 KR KR8602240A patent/KR900005783B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPS61220330A (ja)	1986-09-30
KR900005783B1 (en)	1990-08-11

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