JP2538857B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2538857B2 JP2538857B2 JP59024460A JP2446084A JP2538857B2 JP 2538857 B2 JP2538857 B2 JP 2538857B2 JP 59024460 A JP59024460 A JP 59024460A JP 2446084 A JP2446084 A JP 2446084A JP 2538857 B2 JP2538857 B2 JP 2538857B2
- Authority
- JP
- Japan
- Prior art keywords
- well
- groove
- insulating film
- forming
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 7
- 238000005513 bias potential Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59024460A JP2538857B2 (ja) | 1984-02-14 | 1984-02-14 | 半導体装置の製造方法 |
KR1019850000298A KR900007904B1 (ko) | 1984-02-14 | 1985-01-18 | 상보형 반도체장치의 제조방법 |
US06/701,350 US4661202A (en) | 1984-02-14 | 1985-02-13 | Method of manufacturing semiconductor device |
EP85101630A EP0159483B1 (en) | 1984-02-14 | 1985-02-14 | Method of manufacturing a semiconductor device having a well, e.g. a complementary semiconductor device |
DE85101630T DE3587255T2 (de) | 1984-02-14 | 1985-02-14 | Verfahren zur Herstellung einer Halbleiteranordnung mit einer Wanne, z.B. einer komplementären Halbleiteranordnung. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59024460A JP2538857B2 (ja) | 1984-02-14 | 1984-02-14 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60170251A JPS60170251A (ja) | 1985-09-03 |
JP2538857B2 true JP2538857B2 (ja) | 1996-10-02 |
Family
ID=12138775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59024460A Expired - Lifetime JP2538857B2 (ja) | 1984-02-14 | 1984-02-14 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2538857B2 (ko) |
KR (1) | KR900007904B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150062680A (ko) * | 2013-11-29 | 2015-06-08 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63116445A (ja) * | 1986-11-04 | 1988-05-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH0766967B2 (ja) * | 1987-06-22 | 1995-07-19 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US5179038A (en) * | 1989-12-22 | 1993-01-12 | North American Philips Corp., Signetics Division | High density trench isolation for MOS circuits |
KR0137974B1 (ko) * | 1994-01-19 | 1998-06-15 | 김주용 | 반도체 장치 및 그 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244186A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Semiconductor intergrated circuit device |
JPS58182848A (ja) * | 1982-04-21 | 1983-10-25 | Nec Corp | 半導体装置およびその製造方法 |
-
1984
- 1984-02-14 JP JP59024460A patent/JP2538857B2/ja not_active Expired - Lifetime
-
1985
- 1985-01-18 KR KR1019850000298A patent/KR900007904B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244186A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Semiconductor intergrated circuit device |
JPS58182848A (ja) * | 1982-04-21 | 1983-10-25 | Nec Corp | 半導体装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150062680A (ko) * | 2013-11-29 | 2015-06-08 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
KR102152272B1 (ko) | 2013-11-29 | 2020-09-04 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR900007904B1 (ko) | 1990-10-22 |
KR850006261A (ko) | 1985-10-02 |
JPS60170251A (ja) | 1985-09-03 |
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