JP2022552897A - Emiシールド工程及び通信モジュール製品 - Google Patents
Emiシールド工程及び通信モジュール製品 Download PDFInfo
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- JP2022552897A JP2022552897A JP2022523920A JP2022523920A JP2022552897A JP 2022552897 A JP2022552897 A JP 2022552897A JP 2022523920 A JP2022523920 A JP 2022523920A JP 2022523920 A JP2022523920 A JP 2022523920A JP 2022552897 A JP2022552897 A JP 2022552897A
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- shielding
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- communication module
- emi
- shielding material
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- 238000000034 method Methods 0.000 title claims abstract description 48
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- 238000004891 communication Methods 0.000 title claims abstract description 39
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000001746 injection moulding Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000863 Ferronickel Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
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- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
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Abstract
Description
Claims (25)
- 互いに混合する樹脂材料と金属粒子とを含むEMIシールド材料であって、前記金属粒子の表面は絶縁保護層を有することを特徴とするシールド材料。
- 前記シールド材料には、一定割合の二酸化ケイ素粒子がさらに混合されていることを特徴とする請求項1に記載のシールド材料。
- 前記シールド材料には、一定割合のアルミナ粒子がさらに混合されていることを特徴とする請求項1又は2に記載のシールド材料。
- 前記シールド材料において、前記金属粒子の重量比率は1~95%であることを特徴とする請求項1に記載のシールド材料。
- 前記シールド材料において、前記二酸化ケイ素粒子の重量比率は1~40%であることを特徴とする請求項2に記載のシールド材料。
- 前記シールド材料において、前記アルミナの重量比率は1~40%であることを特徴とする請求項3に記載のシールド材料。
- 前記シールド材料は、重量比率が0.1~0.2%である硬化剤をさらに含むことを特徴とする請求項1に記載のシールド材料。
- 前記シールド材料において、前記樹脂材料の重量比率は1%~30%であることを特徴とする請求項1に記載のシールド材料。
- 前記金属粒子のサイズは、0.1um~30umの間にあることを特徴とする請求項1に記載のシールド材料。
- 前記二酸化ケイ素粒子のサイズは、0.1um~30umの間にあることを特徴とする請求項2に記載のシールド材料。
- 前記アルミナ粒子のサイズは、0.1um~30umの間にあることを特徴とする請求項3に記載のシールド材料。
- 前記金属粒子の材質は、銀、金、銅、クロム、ニッケル、フェロニッケル、上記2つ以上の金属からなる合金、又は上記金属或いは合金からなる傾斜機能材料を含むことを特徴とする請求項1に記載のシールド材料。
- 前記金属粒子は、異なる材質が混在する金属粒子を含むことを特徴とする請求項12に記載のシールド材料。
- 前記金属粒子上の前記絶縁保護層は、樹脂、テフロン、窒化ケイ素又は酸化ケイ素コーティングであり、その厚さが1nm~5000nmの間にあることを特徴とする請求項1に記載のシールド材料。
- 基板に設けられたモジュール素子を含む通信モジュール製品であって、EMIシールドを必要とする前記モジュール素子の周辺には、請求項1~14の何れか1項に記載のシールド材料が充填されていることを特徴とする通信モジュール製品。
- 前記モジュール素子と前記基板との間、及び前記モジュール素子の天井部には前記シールド材料が充填されていることを特徴とする請求項15に記載の通信モジュール製品。
- 前記モジュール素子の天井部での前記シールド材料は、30umを超える厚さを有することを特徴とする請求項15に記載の通信モジュール製品。
- 前記通信モジュール製品の外部は、金属シールド層で被覆されていることを特徴とする請求項15に記載の通信モジュール製品。
- EMIシールド工程であって、
a:モジュール素子が設けられた通信モジュールを製造するステップと、
b:前記通信モジュールの、EMIシールドを必要とするモジュール素子領域に、請求項1~14の何れか1項に記載のシールド材料を付与するステップと、を含むEMIシールド工程。 - 前記付与ステップは、印刷工程及び/又はディスペンシング工程を利用することを特徴とする請求項19に記載のEMIシールド工程。
- 前記印刷工程は、具体的に、前記通信モジュールの被覆を必要とする領域にカスタマイズのスクリーンを使用して、前記シールド材料を印刷するステップを含むことを特徴とする請求項20に記載のEMIシールド工程。
- 前記印刷工程は、真空印刷であることを特徴とする請求項21に記載のEMIシールド工程。
- 前記ディスペンシング工程は、具体的に、ディスペンシングの方式で、前記モジュール素子の底部及び天井部に対する前記シールド材料の充填又は被覆を実現するステップを含むことを特徴とする請求項20に記載のEMIシールド工程。
- c:前記シールド材料が付与された通信モジュールで射出成形を行うステップをさらに含むことを特徴とする請求項19~23の何れか1項に記載のEMIシールド工程。
- d:射出成形後の通信モジュールの外層でスパッタリング又は塗装を行うことで、金属シールド層を形成するステップをさらに含むことを特徴とする請求項24に記載のEMIシールド工程。
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