JP2022539629A - アレイ基板及びその製造方法とディスプレイパネル - Google Patents
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- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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Abstract
Description
そのうち、前記障壁40は前記緩衝領域Z1を、前記障壁40と前記ビア領域Z1との間の第1緩衝領域Z21、及び前記障壁40と前記表示領域Z3との間の第2緩衝領域Z21に分割する。
理解することができるように、前記表示領域Z3内のアレイ機能層は通常、たとえばソースドレイン電極及びゲートのような各金属メッキ層、活性層、たとえば、ゲート絶縁層、パッシベーション層、層間絶縁層等の無機層、及びたとえば、平坦層、画素定義層等の有機膜層を含み、一方、ビア領域Z1、緩衝領域Z2中のアレイ機能層はその中の無機膜層、及びアレイ機能層中の有機膜層と同期して形成される障壁40のみを含む。
S02:前記緩衝領域の無機膜層内に前記ビア領域を囲む1つ又は複数の凹溝30を形成し、通常の状況下では、前記凹溝30は乾式エッチングプロセスによって形成され、すなわち図9Bに示す構造として形成される。前記凹溝30は前記第1緩衝領域Z21に形成される第1凹溝301、及び/又は前記第2緩衝領域Z22に形成される第2凹溝302を含み、前記凹溝30の形状は閉じた又は不連続な環状である。具体的には、上記実施例についての記載を参照することができるため、ここでは詳細説明をしない。前記凹溝30は前記基板10を露出させる(このタイプは図示せず)、又は前記凹溝30は前記基板10を露出させる。
S03:前記凹溝30の内部に有機材料50を充填し、すなわち、図9Cに示す構造を形成し、有機材料を充填するプロセスは通常、インクジェットプリントプロセス又はコーティングプロセスであってもよく、通常の状況下では、前記第1凹溝301内のみは充填されるが、第2凹溝302は空きであり、当該アレイ基板を使用して後続のディスプレイパネルの製造を行う。そのうち、フィルム実装プロセスを行う際に、インクジェットプリントされた液体有機材料がレべリングする過程では、第2凹溝302が比較的低位置にあるため、有機材料はまず第2凹溝302を満たし、すなわち、インクジェットプリントされた液体有機材料が障壁40を越えてこぼれることを効果的に阻止できる。
20 アレイ機能層
30 凹溝
40 障壁
50 有機材料
201 無機膜層
301 第1凹溝
302 第2凹溝
2011 環状無機ストリップ部
2012 不連続部位
Claims (17)
- アレイ基板であって、前記アレイ基板は基板、及び前記基板上に形成されるアレイ機能層を含み、前記アレイ基板はビア領域、緩衝領域、及び表示領域に分割され、
前記ビア領域は、1つの貫通するビアが形成され、
前記緩衝領域は、前記ビア領域を囲んで配置され、
前記表示領域は、前記緩衝領域を囲んで配置され、
前記緩衝領域では、基板、及び前記基板上に形成されるアレイ機能層中の無機膜層を含み、前記無機膜層では、前記ビア領域を囲む1つ又は複数の凹溝が形成され、前記凹溝の形状は閉じた又は不連続な環状であり、前記凹溝の深さは前記無機膜層の厚さ未満である、又は前記凹溝は前記基板を露出させるアレイ基板。 - 前記緩衝領域中の無機膜層上に、前記ビア領域を囲む障壁が設置され、前記障壁と前記ビア領域との間の領域は第1緩衝領域であり、前記障壁と前記表示領域との間の領域は第2緩衝領域であり、前記1つ又は複数の凹溝は前記第1緩衝領域、及び/又は第2緩衝領域に設置され、前記1つ又は複数の凹溝は前記第1緩衝領域に設置される第1凹溝、及び/又は前記第2緩衝領域に設置される第2凹溝を含む請求項1に記載のアレイ基板。
- 前記第1凹溝及び前記第2凹溝はそれぞれ独立して閉じた又は不連続な環状である請求項2に記載のアレイ基板。
- 前記第1凹溝の内部に有機材料が充填されている請求項2に記載のアレイ基板。
- 前記第1緩衝領域に少なくとも1本の前記第1凹溝が設置され、前記少なくとも1本の第1凹溝は前記第1緩衝領域中の無機膜層を仕切って少なくとも2本の環状無機ストリップ部を形成し、前記第1凹溝が閉じた環状である場合、前記少なくとも2本の環状無機ストリップ部のうちの1つ又は複数に1つ又は複数の切り欠きが配置され、前記1つ又は複数の切り欠きに有機材料が充填される請求項3に記載のアレイ基板。
- 前記第1緩衝領域に少なくとも2本の前記第1凹溝が設置され、前記第1緩衝領域中の無機膜層を仕切って少なくとも3本の環状無機ストリップ部を形成し、前記少なくとも3本の環状無機ストリップ部のうち、最外側及び最内側の前記環状無機ストリップ部は閉じた環状であり、残りの前記環状無機ストリップ部はそれぞれ1つの切り欠きが設置される請求項4に記載のアレイ基板。
- 2本の隣接する前記切り欠きを持つ環状無機ストリップ部では、2つの前記切り欠きと前記ビア領域の中心とがなす夾角は90度以上、且つ180度以下である請求項6に記載のアレイ基板。
- 前記第2緩衝領域に少なくとも1本の前記第2凹溝が設置され、前記第2凹溝は不連続な環状であり、且つ1つ又は複数の不連続部位が設置される請求項3に記載のアレイ基板。
- 前記第2緩衝領域に2本の前記第2凹溝が設置され、各前記第2凹溝はいずれも不連続な環状であり、且つ均等に分布する4つの不連続部位が設置され、前記2本の第2凹溝の不連続部位は相互に45度ずれている請求項8に記載のアレイ基板。
- 前記第2緩衝領域に1本の前記第2凹溝が設置され、当該第2凹溝は不連続な環状であり、且つ均等に分布する4つの不連続部位が設置される請求項8に記載のアレイ基板。
- アレイ基板の製造方法であって、前記アレイ基板はビア領域、緩衝領域、及び表示領域を含み、前記緩衝領域は前記ビア領域を囲んで配置され、前記表示領域は前記緩衝領域を囲んで配置され、前記製造方法は、
1つの基板を提供し、前記基板上にアレイ機能層を形成し、前記ビア領域及び緩衝領域に形成される膜層は前記アレイ機能層中の無機膜層、及び前記緩衝領域の無機膜層に形成され前記ビア領域を囲んで配置される障壁のみを含むステップS01、
前記緩衝領域の無機膜層内に前記ビア領域を囲む1つ又は複数の凹溝を形成し、前記凹溝の形状は閉じた又は不連続な環状であり、前記凹溝の深さは前記無機膜層の厚さ未満である、又は前記凹溝は前記基板を露出させるステップS02、
前記凹溝の内部に有機材料を充填するステップS03、及び
前記ビア領域を切断することにより、1つの貫通するビアを形成するステップS04、を含むアレイ基板の製造方法。 - 前記ステップS02では、前記凹溝は乾式エッチングプロセスによって形成される請求項11に記載のアレイ基板の製造方法。
- 前記ステップS03では、前記有機材料はインクジェットプリントプロセス又はコーティングプロセスによって充填される請求項11に記載のアレイ基板の製造方法。
- 前記ステップS04では、前記ビアはレーザ切断プロセスによって形成される請求項11に記載のアレイ基板の製造方法。
- 前記障壁は、前記緩衝領域を、前記障壁と前記ビア領域との間の第1緩衝領域、及び前記障壁と前記表示領域との間の第2緩衝領域に分割し、形成される前記凹溝は前記第1緩衝領域に形成される第1凹溝、及び/又は前記第2緩衝領域に形成される第2凹溝を含む請求項11に記載のアレイ基板の製造方法。
- 前記第1凹溝及び前記第2凹溝はそれぞれ独立して閉じた又は不連続な環状である請求項15に記載のアレイ基板の製造方法。
- ディスプレイパネルであって、前記ディスプレイパネルは請求項1に記載のアレイ基板を含むディスプレイパネル。
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PCT/CN2020/098180 WO2021237856A1 (zh) | 2020-05-27 | 2020-06-24 | 阵列基板及其制备方法与显示面板 |
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US11695015B2 (en) | 2023-07-04 |
EP4160681A4 (en) | 2024-05-29 |
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US20210375948A1 (en) | 2021-12-02 |
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