JP2021519340A - ポリアルキル汚染が少ないモノアルキルスズ化合物、それらの組成物及び方法 - Google Patents
ポリアルキル汚染が少ないモノアルキルスズ化合物、それらの組成物及び方法 Download PDFInfo
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- JP2021519340A JP2021519340A JP2020554212A JP2020554212A JP2021519340A JP 2021519340 A JP2021519340 A JP 2021519340A JP 2020554212 A JP2020554212 A JP 2020554212A JP 2020554212 A JP2020554212 A JP 2020554212A JP 2021519340 A JP2021519340 A JP 2021519340A
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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Abstract
Description
本出願は、Edson et al.,“Monoalkyl Tin Compounds With Low Polyalkyl Contamination,Their Compositions and Methods”に対する2018年4月11日に出願された係属中の米国特許出願第15/950,292号の一部継続出願及びEdson et al.,“Monoalkyl Tin Compounds With Low Polyalkyl Contamination,Their Compositions and Methods”に対する2018年4月11日に出願された係属中の米国特許出願第15/950,286号の一部継続出願(両方とも、参照によって本願に組み入れられる)である。
RSnX3+3H2O→RSn(OH)3+3HX、
RSn(OH)3→RSnO(1.5−(x/2))OHx+(x/2)H2O。
この実施例は、N−メチルアミド基を置換するスズに結合したt−ブチル基を有するスズ化合物の合成を目的としている。
この実施例は、Sn(NMe2)4のN−メチルアミド基を置換するZn試薬からのシクロヘキシル基を有するスズ化合物の合成を目的としている。
この実施例は、以下の式に示されるようにシクロヘプチル基を有するスズトリアミドの合成を目的としている。この合成において、亜鉛試薬(CyHp)2Znからのシクロヘプチル基は、Sn(NMe2)4のN−メチルアミド基を置換する。
この実施例は、以下の反応による相当するモノアルキルスズトリアミドからのモノアルキルスズトリアルコキシドの合成を示す。
この実施例は、実施例6のt−ブチルトリス(N−メチルアセトアミド)スズ(IV)生成物からのt−BuSn(Ot−Am)3の合成を示す。
この実施例は、t−Bu2Sn(NMe2)2とt−BuSn(NMe2)3との混合物からのその分離によってt−BuSn(NMe2)3を精製する分留の有効性を実証する。
この実施例は、Sn(OtAm)4とt−BuSn(OtAm)3との混合物からのその分離によって実証されるように、t−BuSn(OtAm)3を精製してアミドを含有しない組成物を製造するための真空蒸留の有効性を示す。トリス(2−アミノエチル)アミン(TREN)が精製助剤として使用された。
Claims (38)
- 化学式RSn(OR’)3によって表されるモノアルキルスズトリアルコキシド化合物又は化学式RSn(NR’2)3によって表されるモノアルキルスズトリアミド化合物と、
全スズ量に対して4モル%以下のジアルキルスズ化合物とを含む組成物であって、式中、
Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、及び
R’が、1〜10個の炭素原子を有するヒドロカルビル基である、組成物。 - Rが、R1R2R3C−(式中、R1及びR2が独立に1〜10個の炭素原子を有するアルキル基であり、R3が水素又は1〜10個の炭素原子を有するアルキル基である)によって表される分岐アルキル配位子である、請求項1に記載の組成物。
- Rがメチル(CH3−)、エチル(CH3CH2−)、イソプロピル(CH3CH3HC−)、tert−ブチル((CH3)3C−)、tert−アミル(CH3CH2(CH3)2C−)、sec−ブチル(CH3(CH3CH2)CH−)、ネオペンチル(CH3)3CCH2−)、シクロヘキシル、シクロペンチル、シクロブチル、又はシクロプロピルを含む、請求項1に記載の組成物。
- R’がメチル基、エチル基、イソプロピル基、又はt−ブチル基を含む、請求項1〜3のいずれか一項に記載の組成物。
- R’がt−アミル基を含む、請求項1〜3のいずれか一項に記載の組成物。
- 約1モル%以下のジアルキルスズ化合物を含む、請求項1〜5のいずれか一項に記載の組成物。
- モノアルキルスズトリアミドを含む、請求項1〜6のいずれか一項に記載の組成物。
- 請求項1又は請求項4〜7のいずれか一項に記載の組成物と、有機溶媒とを含む溶液。
- 約0.005M〜約0.5Mの濃度を有する請求項8に記載の溶液であって、前記溶媒がアルコールを含む、溶液。
- Rがメチル(CH3−)、エチル(CH3CH2−)、イソプロピル(CH3CH3HC−)、tert−ブチル((CH3)3C−)、tert−アミル(CH3CH3(CH3)2C−)、sec−ブチル(CH3(CH3CH2)CH−)、ネオペンチル(CH3)3CCH2−)、シクロヘキシル、シクロペンチル、シクロブチル、又はシクロプロピルを含み、R’がメチル基、エチル基、イソプロピル基、t−ブチル基、又はt−アミル基を含む、請求項8又は請求項9に記載の溶液。
- ジアルキルスズの汚染が少ないモノアルキルスズトリアルコキシド化合物を選択的に形成するための方法であって、
請求項7に記載の組成物を式HOR’’によって表されるアルコールと有機溶媒中で反応させてRSnOR’’3(式中、R’’が独立に、1〜10個の炭素原子を有するヒドロカルビル基である)を形成して、スズの全量に対して4モル%以下のジアルキルスズ化合物を有する生成物組成物を形成する工程を含む方法。 - 化学式RSn−(NR’COR’’)3(式中、Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、及び
R’及びR’’が独立に、1〜10個の炭素原子を有するヒドロカルビル基である)によって表されるモノアルキルトリアミドスズ化合物を含む組成物。 - R’がメチル基である、請求項12に記載の組成物。
- R’’がメチル基である、請求項12又は請求項13に記載の組成物。
- Rがメチル(CH3−)、エチル(CH3CH2−)、イソプロピル(CH3CH3HC−)、tert−ブチル((CH3)3C−)、t−アミル(CH3CH3(CH3CH2)C−)、sec−ブチル(CH3(CH3CH2)HC−)、ネオペンチル(CH3)3CCH2−)、シクロヘキシル、シクロペンチル、シクロブチル、又はシクロプロピルを含む、請求項12に記載の組成物。
- 結晶性であり、約1モルパーセント以下のジアルキルスズ汚染物質を含む、請求項12〜15のいずれか一項に記載の組成物。
- RMgX、R2Zn、RZnNR’2、又はそれらの組合せからなる群から選択されるアルキル化剤を有機溶媒を含む溶液中でSn(NR’2)4と反応させる工程であって、
式中、Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、
Xがハロゲンであり、及び
R’が、1〜10個の炭素原子を有するヒドロカルビル基である工程を含む、モノアルキルスズトリアミド化合物を形成するための方法。 - 前記溶液が、約0.01M〜約5Mの間のスズの濃度を有する、請求項17に記載の方法。
- 前記有機溶媒がアルカン、芳香族炭化水素、エーテル、又はそれらの混合物を含む、請求項17又は請求項18に記載の方法。
- 前記溶液が、スズ試薬及び前記アルキル化剤の化学量論的反応に対して約±25%のアルキル化剤の濃度を有する、請求項17〜19のいずれか一項に記載の方法。
- 前記反応が、周辺光から遮蔽して前記アルキル化剤の段階的な添加によって不活性雰囲気下で行われる、請求項17〜20のいずれか一項に記載の方法。
- 前記アルキル化剤が10分〜90分間にわたって段階的に添加される、請求項17〜21のいずれか一項に記載の方法。
- 前記反応が15分〜24時間にわたって−100℃〜100℃の温度で行われる、請求項17〜21のいずれか一項に記載の方法。
- 前記溶液がスズに対して0.25〜4モル当量の中性配位塩基をさらに含む、請求項17〜23のいずれか一項に記載の方法。
- RSn(NR’2)3を式HOR’’によって表されるアルコールと有機溶媒中で反応させてRSnOR’’3を形成する工程であって、RSn(NR’2)3反応体が約4モル%以下のジアルキルスズ汚染物質を有し、請求項1に記載の方法の生成物であり、式中、Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、並びにR’及びR’’が独立に、1〜10個の炭素原子を有するヒドロカルビル基である、工程を含む、ジアルキルスズの汚染が少ないモノアルキルスズトリアルコキシド化合物を選択的に形成するための方法。
- 前記反応が、前記スズのモル量に対して約0.5モル%〜約15モル%の量の四座キレート剤を使用して行われる、請求項25に記載の方法。
- 化学式RSn(NR’2)3によって表されるモノアルキルスズトリアミド化合物をアミド(R’’CONHR’’’)と有機溶媒中で反応させる工程であって、式中、Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、並びにR’、R’’及びR’’’が独立に、1〜8個の炭素原子を有するヒドロカルビルである工程と、
式RSn(NR’’’COR’’)3によって表される固体生成物を集める工程とを含む、モノアルキルトリアミドスズを形成するための方法。 - 前記モノアルキルスズトリアミドが約0.1M〜約8Mの初期濃度であり、前記溶媒がアルカン、芳香族炭化水素、又はエーテルである、請求項27に記載の方法。
- 前記アミドが、少なくとも約2分間にわたって段階的に添加される、請求項27又は請求項28に記載の方法。
- 前記固体生成物が結晶性であり、スズに対してジアルキルスズ化合物の汚染物質約1モルパーセント以下を有する、請求項27〜29のいずれか一項に記載の方法。
- モノアルキルトリアミドスズ化合物(RSn(NR’’’COR’’)3)をアルカリアルコキシド化合物(QOR’、式中、Qがアルカリ金属原子である)と有機溶媒中で反応させて、化学式RSn(OR’)3(式中、Rが、1〜31個の炭素原子を有するヒドロカルビル基であり、並びにR’、R’’及びR’’’が独立に、1〜10個の炭素を有するヒドロカルビル基である)によって表される生成物化合物を形成する工程を含む、モノアルキルスズトリアルコキシドを形成するための方法。
- アルコキシド供与化合物が、少なくとも化学量論量において提供される、請求項31に記載の方法。
- 前記溶媒がアルカン、芳香族炭化水素、又はエーテルである、請求項31又は請求項32に記載の方法。
- モノアルキルスズ(monoalkyl tine)トリアルコキシドと四座非平面錯生成剤とのブレンドを蒸留する工程を含む、モノアルキルスズトリアルコキシドを精製するための方法。
- 前記四座非平面錯生成剤がTRENを含む、請求項34に記載の方法。
- 前記四座非平面錯生成剤が、スズのモル量に対して約0.5モル%〜約15モル%の量で存在している、請求項34又は請求項35に記載の方法。
- 前記アルキル基が、R1R2R3C−(式中、R1及びR2が独立に1〜10個の炭素原子を有するアルキル基であり、R3が水素又は1〜10個の炭素原子を有するアルキル基である)によって表される、請求項34〜36のいずれか一項に記載の方法。
- 前記アルキル基が、イソプロピル、tert−ブチル、tert−アミル、sec−ブチル又はネオペンチルを含む、請求項34〜36のいずれか一項に記載の方法。
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CA3219374A1 (en) | 2019-10-17 |
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