JP2021063300A - 接合体及び半導体装置 - Google Patents
接合体及び半導体装置 Download PDFInfo
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- JP2021063300A JP2021063300A JP2020216854A JP2020216854A JP2021063300A JP 2021063300 A JP2021063300 A JP 2021063300A JP 2020216854 A JP2020216854 A JP 2020216854A JP 2020216854 A JP2020216854 A JP 2020216854A JP 2021063300 A JP2021063300 A JP 2021063300A
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- Prior art keywords
- metal layer
- copper
- sintered metal
- flake
- particles
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Abstract
Description
本実施形態に係る接合体は、第一の部材と、第二の部材と、第一の部材と第二の部材とを接合する焼結金属層と、を備え、焼結金属層が所定の配向構造を有し、且つ焼結金属層における銅の含有量が、焼結金属層の体積を基準として、65体積%以上である。
S=1/2×(3<cos2θ>−1)・・・(1)
式中、θは界面とフレーク状構造とが成す角度を示し、<cos2θ>は複数のcos2θの値の平均値を示す。
配向秩序度Sは、0.88以上1.00以下であってもよく、0.90以上1.00以下であってもよく、0.92以上1.00以下であってもよい。配向秩序度Sがこのような範囲内であれば、焼結金属層に含まれるフレーク状構造が、接合面に対して略平行に配向するため、接合体の接合強度及び接続信頼性が向上する傾向にある。
焼結金属層における銅の含有量(体積%)=[(M1)/8.96]×100・・・(2)
本実施形態の接合体は、例えば以下の方法で製造することができる。接合体の製造方法としては、第一の部材、該第一の部材の自重が働く方向側に、接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び0.01MPa以下の圧力を受けた状態で焼結する工程を備える方法が挙げられる。
本実施形態の接合体の製造方法で用いられる接合用銅ペーストの一例を以下に示す。
本実施形態に係る金属粒子としては、サブマイクロ銅粒子、フレーク状マイクロ銅粒子、これら以外の銅粒子、その他の金属粒子等が挙げられる。
サブマイクロ銅粒子としては、粒径が0.12μm以上0.8μm以下の銅粒子を含むものが挙げられ、例えば、体積平均粒径が0.12μm以上0.8μm以下の銅粒子を用いることができる。サブマイクロ銅粒子の体積平均粒径が0.12μm以上であれば、サブマイクロ銅粒子の合成コストの抑制、良好な分散性、表面処理剤の使用量の抑制といった効果が得られやすくなる。サブマイクロ銅粒子の体積平均粒径が0.8μm以下であれば、サブマイクロ銅粒子の焼結性が優れるという効果が得られやすくなる。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の体積平均粒径は、0.15μm以上0.8μm以下であってもよく、0.15μm以上0.6μm以下であってもよく、0.2μm以上0.5μm以下であってもよく、0.3μm以上0.45μm以下であってもよい。
フレーク状マイクロ銅粒子としては、最大径が1μm以上20μm以下であり、アスペクト比が4以上の銅粒子を含むものが挙げられ、例えば、平均最大径が1μ以上20μm以下であり、アスペクト比が4以上の銅粒子を用いることができる。フレーク状マイクロ銅粒子の平均最大径及びアスペクト比が上記範囲内であれば、接合用銅ペーストを焼結した際の体積収縮を充分に低減でき、上述した本実施形態に係る焼結金属層を形成することが容易となる。より一層上記効果を奏するという観点から、フレーク状マイクロ銅粒子の平均最大径は、1μm以上10μm以下であってもよく、3μm以上10μm以下であってもよい。フレーク状マイクロ銅粒子の最大径及び平均最大径の測定は、例えば、粒子のSEM像から求めることができ、後述するフレーク状構造の長径X及び長径の平均値Xavとして求められる。
金属粒子としては、上述したサブマイクロ銅粒子及びマイクロ銅粒子以外のその他の金属粒子を含んでいてもよく、例えば、ニッケル、銀、金、パラジウム、白金等の粒子を含んでいてもよい。その他の金属粒子は、体積平均粒径が0.01μm以上10μm以下であってもよく、0.01μm以上5μm以下であってもよく、0.05μm以上3μm以下であってもよい。その他の金属粒子を含んでいる場合、その含有量は、充分な接合性を得るという観点から、金属粒子の全質量を基準として、20質量%未満であってもよく、10質量%以下であってもよい。その他の金属粒子は、含まれなくてもよい。その他の金属粒子の形状は、特に限定されるものではない。
分散媒は特に限定されるものではなく、揮発性のものであってもよい。揮発性の分散媒としては、例えば、ペンタノール、ヘキサノール、ヘプタノール、オクタノール、デカノール、エチレングリコール、ジエチレングリコール、プロピレングリコール、ブチレングリコール、α−テルピネオール、イソボルニルシクロヘキサノール(MTPH)等の一価及び多価アルコール類;エチレングリコールブチルエーテル、エチレングリコールフェニルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールエチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールイソブチルエーテル、ジエチレングリコールヘキシルエーテル、トリエチレングリコールメチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールブチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールブチルメチルエーテル、プロピレングリコールプロピルエーテル、ジプロピレングリコールメチルエーテル、ジプロピレングリコールエチルエーテル、ジプロピレングリコールプロピルエーテル、ジプロピレングリコールブチルエーテル、ジプロピレングリコールジメチルエーテル、トリプロピレングリコールメチルエーテル、トリプロピレングリコールジメチルエーテル等のエーテル類;エチレングリコールエチルエーテルアセテート、エチレングリコールブチルエーテルアセテート、ジエチレングリコールエチルエーテルアセテート、ジエチレングリコールブチルエーテルアセテート、ジプロピレングリコールメチルエーテルアセテート(DPMA)、乳酸エチル、乳酸ブチル、γ−ブチロラクトン、炭酸プロピレン等のエステル類;N−メチル−2−ピロリドン、N,N−ジメチルアセトアミド、N,N−ジメチルホルムアミド等の酸アミド;シクロヘキサノン、オクタン、ノナン、デカン、ウンデカン等の脂肪族炭化水素;ベンゼン、トルエン、キシレン等の芳香族炭化水素;炭素数1〜18のアルキル基を有するメルカプタン類;炭素数5〜7のシクロアルキル基を有するメルカプタン類が挙げられる。炭素数1〜18のアルキル基を有するメルカプタン類としては、例えば、エチルメルカプタン、n−プロピルメルカプタン、i−プロピルメルカプタン、n−ブチルメルカプタン、i−ブチルメルカプタン、t−ブチルメルカプタン、ペンチルメルカプタン、ヘキシルメルカプタン及びドデシルメルカプタンが挙げられる。炭素数5〜7のシクロアルキル基を有するメルカプタン類としては、例えば、シクロペンチルメルカプタン、シクロヘキシルメルカプタン及びシクロヘプチルメルカプタンが挙げられる。
接合用銅ペーストには、必要に応じて、ノニオン系界面活性剤、フッ素系界面活性剤等の濡れ向上剤;シリコーン油等の消泡剤;無機イオン交換体等のイオントラップ剤等を適宜添加してもよい。
接合用銅ペーストは、上述のサブマイクロ銅粒子、マイクロ銅粒子、その他の金属粒子及び任意の添加剤を分散媒に混合して調製してもよい。各成分の混合後に、撹拌処理を行ってもよい。接合用銅ペーストは、分級操作により分散液の最大粒径を調整してもよい。
本実施形態の半導体装置は、第一の部材と、第二の部材と、第一の部材と第二の部材とを接合する焼結金属層と、を備え、第一の部材及び第二の部材の少なくとも一方が半導体素子である、半導体装置であって、焼結金属層が所定の配向構造を有し、且つ焼結金属層における銅の含有量が、焼結金属層の体積を基準として、65体積%以上である。
(1)ダイシェア強度の測定
銅板(19×25×3mm3)上に、厚さ70μmのステンレス板に3×3mm正方形の開口を3行3列有するメタルマスクを載せ、メタルスキージを用いてステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、チタン、ニッケルがこの順で形成され、3×3mm2の被着面がニッケルであるシリコンチップ(チップ厚:600μm)を載せ、ピンセットで軽く押さえた。これをチューブ炉(株式会社エイブイシー製)にセットし、アルゴンガスを1L/minで流して空気をアルゴンガスに置換した。その後、水素ガスを300mL/minで流しながら昇温10分、350℃10分の条件で焼結処理して銅板とシリコンチップとを焼結金属層で接合した接合体を得た。その後、アルゴンガスを0.3L/minに換えて冷却し、50℃以下で接合体を空気中に取り出した。
接合体の接合強度は、ダイシェア強度により評価した。1kNのロードセルを装着した万能型ボンドテスタ(4000シリーズ、DAGE社製)を用い、測定スピード500μm/s、測定高さ100μmでシリコンチップを水平方向に押し、接合体のダイシェア強度を測定した。8個の接合体の測定した値の平均値をダイシェア強度とした。
厚さ1mmのテフロン(登録商標)板に15×15mm2の開口を設けた。ガラス板上にこのテフロン(登録商標)板を置き、開口部に接合用銅ペーストを充填し、メタルスキージで開口から溢れた接合用銅ペーストを除去した。テフロン(登録商標)板をはずし、チューブ炉にセットし、アルゴンガスを0.3L/minで流しながら、150℃に加熱して1時間保持して溶媒を除去した。そのまま、ガスを水素ガス300mL/minに換え、350℃に昇温して60分焼結処理して、焼結金属層を得た。その後、アルゴンガスを0.3L/minに換えて冷却し、50℃以下で焼結金属層を空気中に取り出した。板状の焼結金属層をガラス板から剥離し、紙やすり(800番)で研磨して10×10mm2のサイズで表面が平坦な板状サンプルを得た。板状サンプルの縦、横、厚みの寸法を測定し、板状サンプルの重量を測定した。これらの値から板状サンプルの密度を算出し、更に下記の式に従い金属銅の体積割合を算出した。
焼結金属層における銅の含有量(体積%)=板状サンプルの密度(g/cm3)/8.96(g/cm3)×100(%)
接合体をカップ内にサンプルクリップ(Samplklip I、Buehler社製)で固定し周囲にエポキシ注形樹脂(エポマウント、リファインテック株式会社製)をサンプル全体が埋まるまで流し込み、真空デシケータ内に静置して1分間減圧して脱泡した。その後、室温で10時間静置し、エポキシ注形樹脂を硬化し、サンプルを調製した。リファインソーエクセル(リファインテック株式会社製)を用いて、サンプルをシリコンチップ近傍で切断した。耐水研磨紙(カーボマックペーパー、リファインテック株式会社製)をつけた研磨装置(Refine Polisher HV、リファインテック株式会社製)で接合体の中央付近まで削り断面を出した。研磨したサンプルは、余分なエポキシ注形樹脂を削り落とし、イオンミリング装置で加工できるサイズにした。イオンミリング装置(IM4000、株式会社日立ハイテクノロジーズ製)をCP加工モードで用い、アルゴンガス流量0.07〜0.1cm3/min、処理時間120分の条件で、サイズ加工したサンプルを断面加工してSEM用サンプルとした。このSEM用サンプルをSEM−EDX装置(ESEM XL30、Philips社製)により、焼結金属層断面を印加電圧15kVで観察した。
「(3)断面モルフォロジー観察」で得られた3000倍のSEM像をImage J(アメリカ国立衛生研究所製)で読み込んだ。SEM像としては、基板又はシリコンチップと焼結金属層との接合界面が写っているものを用いた。[T]キーを押してROI Managerウインドウを表示し、Show Allのチェックボックスにチェックを入れた。メインウインドウからStraight Lineを選択した。画像上の稠密な連続部であり、直線状、直方体状、楕円体状の部分で、この部分の内に内包される直線の中で最大の長さのものを長径、それと直交してこの部分に内包される直線の中で最大の長さのものを厚みとしたときに、長径の長さが1μm以上で且つ長径/厚みの比が4以上であるものをフレーク状構造と特定した。このフレーク状構造の断面の端から端までをクリック→ドラッグでラインを引き、[T]キーを押してROI Managerウインドウに登録した。この操作を画面上のフレーク状構造全てに対し、重複無く繰り返した。ただし、画面端からはみ出て像が切断されているフレーク状構造は選択しなかった。次に、ROI Managerウインドウ内のMeasureボタンを押した。計測された角度がResultsウインドウに表示されるので、[File]→[Save As]でファイルにセーブした。基板又はシリコンチップとの接合界面が画像に対し水平からずれている場合には、同様にしてその角度を計測した。セーブされた結果のファイルをMicrosoft Excelで読み込んだ。基板又はシリコンチップと焼結金属層との界面が画像に対し水平からずれている場合には、測定された各角度から接合界面の角度を減算した。各角度θに対しcos2θを求め、その平均値<cos2θ>を算出し、S=1/2×(3<cos2θ>−1)に代入して配向秩序度Sを算出した。
Sが0.83以上である場合を、部材と焼結金属層との界面に対して略平行に配向したフレーク状構造が「有」とした。
「断面モルフォロジー観察」で得られた5000倍のSEM像をImage J(アメリカ国立衛生研究所製)で読み込んだ。メインウインドウからStraight Lineを選択した。画像下部のスケール(本例では5μmを示すスケール)の端から端までクリック→ドラッグでラインを引き、メインウインドウから[Analyze]→[Set Scale]を選択し、Set Scaleウインドウを表示させ、Known Distance:のボックスに「5」、Unit of length:のボックスに「μm」を入力し[OK]ボタンをクリックした。[T]キーを押してROI Managerウインドウを表示し、Show Allのチェックボックスにチェックを入れた。(4)と同じ方法によりフレーク状構造を特定し、画像上のフレーク状構造の断面の端から端までをクリック→ドラッグでラインを引き、[T]キーを押してROI Managerウインドウに登録した。この操作を画面上のフレーク状構造全てに対し、重複無く繰り返した。画面端からはみ出て像が切断されているフレーク状構造は選択しなかった。次に、ROI Managerウインドウ内のMeasureボタンを押した。計測された長さがResultsウインドウに表示されるので、[File]→[Save As]でファイルにセーブした。同様にして画像上のフレーク状構造の断面の厚み方向の長さを計測してファイルにセーブした。セーブしたファイルをMicrosoft Excelで読み出し、測長結果の平均を計算した。こうして、フレーク状構造の長径の平均及びフレーク状構造の厚みの平均を得た。更に、フレーク状構造の長径の平均を板状構造の厚みの平均で除することで、「フレーク状構造の長軸方向の数平均長さと厚み方向の数平均長さの比」を得た。
「(3)断面モルフォロジー観察」で得られたSEM用サンプルをSEM−EDX装置にセットし、ワークディスタンス10mm以内、Spot:4、印加電圧15kV、5000倍の条件で画面全体が焼結金属層となるように視野を設定し、ピントを合わせ、必要に応じてエニグマ補正を行った。EDXの測定プログラム「EDX Control」を立上げ、積算ボタンを押して5分間積算した。測定プログラムで得られたスペクトルを同定(自動)した。この際、軽元素(Li、Be、B、C、N、O)のピークは検出対象から除外した。更に、ベースライン設定(自動)を行ったうえで、組成比の計算を行って各成分の組成比を定量し、銅の割合を「軽元素を除いた元素中の銅元素の割合」とした。
「(2)金属銅の体積割合」で作製した板状サンプルを用い、熱拡散率をレーザーフラッシュ法(LFA467、ネッチ社製)で測定した。この熱拡散率と、示差走査熱量測定装置(DSC8500、パーキンエルマー社製)で得られた比熱容量と、「(2)金属銅の体積割合」で求めた密度との積により、25℃における銀焼結体の熱伝導率[W/(m・K)]を算出した。
「(1)ダイシェア強度」と同様にして、銅板(19×25×3mm3)と4×8mm2の被着面がニッケルであるシリコンチップ(チップ厚:600μm)とを焼結金属層で接合した接合体を得た。接合体上に接着性向上材(HIMAL、日立化成株式会社製)を塗布、乾燥した後、固形封止材(CEL、日立化成株式会社製)で封止しして温度サイクル用試験片を得た。この温度サイクル用試験片を温度サイクル試験機(TSA−72SE−W、エスペック株式会社製)にセットし、低温側:−40℃、15分、室温:2分、高温側:200℃、15分、除霜サイクル:自動、サイクル数:1000サイクルの条件で温度サイクル接続信頼性試験を実施した。超音波探傷装置(Insight−300、インサイト株式会社製)を用い、温度サイクル接続信頼性試験前後の焼結金属層と基板又はチップとの界面の接合状態のSAT像を得て、剥離の有無を調べた。接合部の剥離面積が、20面積%未満の場合を良好(○)とし、20面積%以上の場合を不良(×)とした。
(5)で用いたものと同じSEM像をImage Jで読み込み、[Image]→[Type]→[RGB color]を選んだ。次に、[Image]→[Adjust]→[Color Threshold]でThreshold Colorウインドウを呼びだし、Threshold ColorウインドウのBrightnessのグラフにおいて、明るさの下限を分布曲線の暗色側にある変曲点に合わせ、上限を明色側100%の位置にした。その後、Threshold Colorウインドウの[Select]を押し、SEM像のうち金属焼結体部分を選択した。この状態で[Analyze]→[Measure]を押し、焼結体部分の断面積を算出した。一方で、(5)で特定したフレーク状構造の長径及び厚みを乗算し、これらを合計することによりフレーク状構造部分の断面積を算出した。{(フレーク状構造部分の断面積)/(焼結体部分の断面積)}×100の式から、接合体全体におけるフレーク状構造の含有割合(%)を算出した。
分散媒としてα−テルピネオール(和光純薬工業株式会社製)5.2g及びイソボルニルシクロヘキサノール(MTPH、日本テルペン化学株式会社製)6.8gと、サブマイクロ銅粒子としてCH0200(三井金属鉱業株式会社製、0.12μm以上0.8μm以下の銅粒子の含有量95質量%)52.8gとをポリ瓶に混合し、超音波ホモジナイザー(US−600、日本精機株式会社製)により19.6kHz、600W、1分処理し分散液を得た。この分散液に、フレーク状マイクロ銅粒子としてMA−C025(三井金属鉱業株式会社製、最大径が1μm以上20μm以下の銅粒子の含有量100質量%)35.2gを添加し、スパチュラで乾燥粉がなくなるまでかき混ぜた。ポリ瓶を密栓し、自転公転型攪拌装置(Planetry Vacuum Mixer ARV−310、株式会社シンキー製)を用いて、2000rpmで2分間撹拌し、減圧下、2000rpmで2分間撹拌して接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
表1に記載した仕込み量を用いたこと以外は、実施例1と同様にして接合用銅ペーストを得た。これらの接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
銅粒子としてフレーク状マイクロ銅粒子であるMA−C025の代わりに、フレーク状マイクロ銅粒子である3L3(福田金属箔粉株式会社製、最大径が1μm以上20μm以下の銅粒子の含有量100質量%)を35.2g用いたこと以外は実施例1と同様にして接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
銅粒子としてフレーク状マイクロ銅粒子であるMA−C025の代わりに、フレーク状マイクロ銅粒子である1110F(三井金属鉱業株式会社製、最大径が1μm以上20μm以下の銅粒子の含有量100質量%)を35.2g用いたこと以外は実施例1と同様にして接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
接合用銅ペーストとして実施例4と同様の物を用いた。この接合用ペーストをチタン、ニッケル、金がこの順で形成され、3×3mm2の被着面が金であるシリコンチップ(チップ厚:600μm)を用いて接合体を作製し「(1)ダイシェア強度の測定」を行った。また、4×8mm2の被着面が金であるシリコンチップ(チップ厚:600μm)を用いて「(8)温度サイクル接続信頼性試験」を行った。
接合用銅ペーストとして実施例4と同様の物を用いた。この接合用ペーストとチタン、ニッケル、銀がこの順で形成され、3×3mm2の被着面が金であるシリコンチップ(チップ厚:600μm)と用いて接合体を作製し「(1)ダイシェア強度の測定」を行った。また、4×8mm2の被着面が銀であるシリコンチップ(チップ厚:600μm)を用いて「(8)温度サイクル接続信頼性試験」を行った。
銅粒子としてフレーク状マイクロ銅粒子であるMA−C025の代わりに、擬球状粒子であるCu−HWQ3μm(アトマイズ粉、福田金属箔粉株式会社製)を35.2g用いたこと以外は実施例1と同様にして接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
表2に記載した組成としたこと以外は、実施例1と同様にして接合用銅ペーストを得た。これらの接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
銅粒子としてCH0200の代わりに、球状銅粒子であるCS−10(50%体積平均粒径1μm、三井金属鉱業株式会社製)を52.8g用いたこと以外は実施例1と同様にして接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
実施例1の接合用銅ペーストに0.88質量%の酢酸(0.88g)を加えて接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
銅粒子としてCH0200を52.8g用いる代わりに、酸化銅(II)粒子(合成品)26.4及びCH0200を26.4g用いたこと以外は実施例1と同様にして接合用銅ペーストを得た。この接合用銅ペーストを用いて、接合体を調製し、各種の測定及び分析を行った。
厚さ100μmのシート状の高温鉛はんだ(93.5Pb5Sn1.5Ag、千住金属工業株式会社製)を3×3mm2のサイズに切断した。銅板(19×25×3mm3)上に3.5×3.5mm2の開口を有するカーボン製冶具を置き、切断した高温鉛はんだと3×3mm2の被着面がニッケルであるシリコンチップ(チップ厚:600μm)をこの順にカーボン冶具の開口内にセットした。水素オーブン内で、水素雰囲気中、最高温度350℃の条件で加熱し、銅板とシリコンチップを高温鉛はんだで接合して接合サンプルを得た。この接合サンプルを用いて、各種の測定及び分析を行った。
銀粒子としてLM1(トクセン工業株式会社製)75gとAgC239(福田金属箔粉工業株式会社製)25g、分散媒としてテルピネオール(和光純薬工業株式会製)13.6g、添加剤としてステアリン酸(新日本理化株式会社製)1gを秤量、混合し、らいかい機を用いて15分間混練し接合用銀ペーストを作製した。焼成処理条件を空気中で110℃に加熱したホットプレート上に10分、200℃に加熱したホットプレート上に60分保持して焼結銀接合サンプルを作製し、各種の測定及び分析を行った。
Claims (4)
- 第一の部材と、第二の部材と、前記第一の部材と前記第二の部材とを接合する焼結金属層と、を備え、
前記焼結金属層が、前記第一の部材又は前記第二の部材と前記焼結金属層との界面に対して略平行に配向したフレーク状の銅粒子に由来する構造を含み、
前記フレーク状の銅粒子に由来する構造の下記式(1)により算出される配向秩序度Sは、0.88以上1.00以下である、接合体。
S=1/2×(3<cos2θ>−1)・・・(1)
[式中、θは前記界面とフレーク状構造とが成す角度を示し、<cos2θ>は複数のcos2θの値の平均値を示す。] - 前記第一の部材及び第二の部材の少なくとも一方が、前記焼結金属層と接する面に、銅、ニッケル、銀、金及びパラジウムからなる群から選択される少なくとも1種の金属を含む、請求項1に記載の接合体。
- 第一の部材と、第二の部材と、前記第一の部材と前記第二の部材とを接合する焼結金属層と、を備え、前記第一の部材及び前記第二の部材の少なくとも一方が半導体素子である、半導体装置であって、
前記焼結金属層が、前記第一の部材又は前記第二の部材と前記焼結金属層との界面に対して略平行に配向したフレーク状の銅粒子に由来する構造を含み、
前記フレーク状の銅粒子に由来する構造の下記式(1)により算出される配向秩序度Sは、0.88以上1.00以下である、半導体装置。
S=1/2×(3<cos2θ>−1)・・・(1)
[式中、θは前記界面とフレーク状構造とが成す角度を示し、<cos2θ>は複数のcos2θの値の平均値を示す。] - ダイシェア強度が、30MPa以上である、請求項3に記載の半導体装置。
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JP6677231B2 (ja) * | 2017-09-22 | 2020-04-08 | 日亜化学工業株式会社 | 電子部品の接合方法および接合体の製造方法 |
JP7057488B2 (ja) * | 2017-09-27 | 2022-04-20 | 日亜化学工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP7127269B2 (ja) * | 2017-10-23 | 2022-08-30 | 昭和電工マテリアルズ株式会社 | 部材接続方法 |
JP6881238B2 (ja) * | 2017-10-31 | 2021-06-02 | 三菱電機株式会社 | 半導体モジュール、その製造方法及び電力変換装置 |
SG11202004664PA (en) * | 2018-01-30 | 2020-06-29 | Hitachi Chemical Co Ltd | Semiconductor device production method and film-shaped adhesive |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009275229A (ja) * | 2000-11-28 | 2009-11-26 | Hitachi Chem Co Ltd | 接着剤組成物、接着フィルム及び半導体装置 |
WO2013125022A1 (ja) * | 2012-02-24 | 2013-08-29 | 株式会社日立製作所 | 半導体装置 |
JP2013239486A (ja) * | 2012-05-11 | 2013-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2013247060A (ja) * | 2012-05-29 | 2013-12-09 | Harima Chemicals Group Inc | 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法 |
JP2015082385A (ja) * | 2013-10-22 | 2015-04-27 | 日立化成株式会社 | 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4928639B1 (ja) | 1969-06-17 | 1974-07-27 | ||
JPS506081B1 (ja) | 1970-12-09 | 1975-03-11 | ||
KR20060112591A (ko) * | 2003-10-17 | 2006-11-01 | 히타치 긴조쿠 가부시키가이샤 | 다층 세라믹 기판 및 그 제조 방법 및 이것을 이용한 전자기기 |
JP4189373B2 (ja) * | 2003-10-31 | 2008-12-03 | 株式会社トクヤマ | 窒化アルミニウム接合体及びその製造方法 |
JP2005203734A (ja) * | 2003-12-15 | 2005-07-28 | Toshiba Ceramics Co Ltd | 金属部材埋設セラミックス品とその製造方法 |
JP4296347B2 (ja) * | 2004-01-19 | 2009-07-15 | Dowaエレクトロニクス株式会社 | フレーク状銅粉およびその製造法 |
US20100001237A1 (en) * | 2007-03-26 | 2010-01-07 | Fornes Timothy D | Method for producing heterogeneous composites |
JP5006081B2 (ja) | 2007-03-28 | 2012-08-22 | 株式会社日立製作所 | 半導体装置、その製造方法、複合金属体及びその製造方法 |
JP5011225B2 (ja) | 2008-07-09 | 2012-08-29 | ニホンハンダ株式会社 | 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法 |
DE102008039828A1 (de) * | 2008-08-27 | 2010-03-04 | W.C. Heraeus Gmbh | Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess |
JP4928639B2 (ja) * | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP4795483B1 (ja) | 2010-04-12 | 2011-10-19 | ニホンハンダ株式会社 | 金属製部材接合体の製造方法および金属製部材接合体 |
DE102011109226A1 (de) | 2011-08-02 | 2013-02-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Verbindungsschicht mit einem Sintermaterial, Verwendung einer Mischung zur Herstellung einer Verbindungsschicht, Verbindungsschicht mit einem Sintermaterial und Bauelement mit einer Verbindungsschicht |
KR101855179B1 (ko) * | 2011-12-21 | 2018-05-09 | 삼성전자 주식회사 | 질환 진단을 위한 최적의 진단 요소 셋 결정 장치 및 방법 |
US20130256894A1 (en) | 2012-03-29 | 2013-10-03 | International Rectifier Corporation | Porous Metallic Film as Die Attach and Interconnect |
JP6199048B2 (ja) | 2013-02-28 | 2017-09-20 | 国立大学法人大阪大学 | 接合材 |
JP6130209B2 (ja) * | 2013-05-14 | 2017-05-17 | Dowaエレクトロニクス株式会社 | 導電膜 |
WO2015098658A1 (ja) * | 2013-12-24 | 2015-07-02 | Dic株式会社 | 金属ナノ粒子を含有する接合用材料 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009275229A (ja) * | 2000-11-28 | 2009-11-26 | Hitachi Chem Co Ltd | 接着剤組成物、接着フィルム及び半導体装置 |
WO2013125022A1 (ja) * | 2012-02-24 | 2013-08-29 | 株式会社日立製作所 | 半導体装置 |
JP2013239486A (ja) * | 2012-05-11 | 2013-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2013247060A (ja) * | 2012-05-29 | 2013-12-09 | Harima Chemicals Group Inc | 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法 |
JP2015082385A (ja) * | 2013-10-22 | 2015-04-27 | 日立化成株式会社 | 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法 |
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