JP2020150180A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 270
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 262
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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Abstract
Description
実施の形態にかかる炭化珪素半導体装置の製造方法で製造される炭化珪素半導体装置の構造は、従来の炭化珪素半導体装置の構造と同様のため、図示を省略する。以下に、実施の形態にかかる炭化珪素半導体装置の製造方法について説明する。図1〜図6は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。
2、102 n-型炭化珪素エピタキシャル層
2a 第1n-型炭化珪素エピタキシャル層
2b 第2n-型炭化珪素エピタキシャル層
3、103 第1p+型ベース領域
3a 下部第1p+型ベース領域
3b 上部第1p+型ベース領域
4、104 第2p+型ベース領域
5、105 n型高濃度領域
5a 下部n型高濃度領域
5b 上部n型高濃度領域
6、106 p型ベース層
7、107 n++型ソース領域
8、108 p++型コンタクト領域
9、109 ゲート絶縁膜
10、110 ゲート電極
11、111 層間絶縁膜
112 ソース電極
113 裏面電極
114 バリアメタル
115 ソース電極パッド
16、116 トレンチ
17、117 n+型領域
18、118 n型バッファ層
18a n型低濃度バッファ層
18b n型高濃度バッファ層
19 酸化膜マスク
121 オリエンテーションフラット
150 トレンチ型MOSFET
60、160 炭化珪素半導体ウェハ
Claims (12)
- 第1導電型の炭化珪素半導体基板のおもて面に、前記炭化珪素半導体基板より低不純物濃度の第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層内に、第2導電型のベース領域を選択的に形成する第2工程と、
前記第1半導体層の、前記炭化珪素半導体基板と反対側の表面に第2導電型の第2半導体層を形成する第3工程と、
前記第2半導体層の表面層に第1導電型の第1半導体領域を選択的に形成する第4工程と、
前記第1半導体領域および前記第2半導体層を貫通して前記第1半導体層に達するトレンチを形成する第5工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する第6工程と、
前記ゲート電極上に層間絶縁膜を形成する第7工程と、
前記第2半導体層および前記第1半導体領域に接する第1電極を形成する第8工程と、
前記炭化珪素半導体基板の裏面に第2電極を形成する第9工程と、
を含み、
前記第2工程では、前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする炭化珪素半導体装置の製造方法。 - 前記第2工程では、前記炭化珪素半導体基板のオフ角の方向に前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第2工程では、前記炭化珪素半導体基板のオフ角と異なる方向に前記炭化珪素半導体基板の垂線と7度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第2工程では、前記ベース領域の長手方向に前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで前記ベース領域をストライプ状に形成することを特徴とする請求項1〜3のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第5工程では、前記トレンチをストライプ状に形成し、
前記第2工程では、前記トレンチの長手方向に前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1〜4のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記トレンチの側壁をm面に形成し、
前記第2工程では、前記炭化珪素半導体基板のオフ角の方向に前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1〜5のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記トレンチの側壁をa面に形成し、
前記第2工程では、前記炭化珪素半導体基板のオフ角と異なる方向に前記炭化珪素半導体基板の垂線と7度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1〜5のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記トレンチを多角形セル状に形成し、
前記第2工程では、前記炭化珪素半導体基板のオフ角と異なる方向に前記炭化珪素半導体基板の垂線と7度以上傾けて、第2導電型の不純物を注入することで前記ベース領域を形成することを特徴とする請求項1〜3、6、7のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記ベース領域は、前記トレンチ間に形成された第1ベース領域と、前記トレンチ底部に形成された第2ベース領域とからなることを特徴とする請求項1〜8のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することで、前記第2半導体層の表面層に前記第1半導体領域と接する第2導電型の第2半導体領域を選択的に形成する第10工程をさらに含み、
前記第3工程では、前記第2半導体層に前記炭化珪素半導体基板の垂線と3度以上傾けて、第2導電型の不純物を注入することを含み、
前記第4工程では、前記炭化珪素半導体基板の垂線と3度以上傾けて、第1導電型の不純物を注入することで前記第1半導体領域を形成することを特徴とする請求項1〜9のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記第1導電型の不純物および前記第2導電型の不純物を注入する際に酸化膜マスクを使用することを特徴とする請求項1〜10のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第2導電型の不純物はアルミニウムであることを特徴とする請求項1〜11のいずれか一つに記載の炭化珪素半導体装置の製造方法。
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