JP5802492B2 - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 251
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 314
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 313
- 239000000758 substrate Substances 0.000 claims description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 65
- 229910052799 carbon Inorganic materials 0.000 claims description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052785 arsenic Inorganic materials 0.000 claims description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 13
- 239000002356 single layer Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 56
- 230000007547 defect Effects 0.000 description 40
- 229910052751 metal Inorganic materials 0.000 description 38
- 239000002184 metal Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 31
- 238000005468 ion implantation Methods 0.000 description 30
- 238000000137 annealing Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 239000012535 impurity Substances 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- 238000009826 distribution Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- -1 carbon ions Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004599 local-density approximation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
また、ドーパントを高濃度に導入し、活性化を行うには、長時間の高温プロセスが必須となっており、実用的ではない。
前述のように今後、SiC半導体素子の微細化が進むと、SiC単一素子内のn型SiC領域とp型SiC領域の両方に、単一の金属にて、同時にオーミックなコンタクトを取る必要がある。n型SiC領域では、オン抵抗が大きくなってしまい、p型SiC領域では、実効的に抵抗とキャパシタが形成されることになるので、スイッチング速度に問題が生じている。更に、合わせ精度の制約やプロセスの簡略化の点から、同時、かつ低抵抗のコンタクト形成が必須になってくる。つまり、単一電極にて、n型SiC領域とp型SiC領域の両方に、低抵抗のコンタクトを取る技術が必須である。
発明者らが行った電子状態計算手法である第一原理計算によると、Siの欠陥の生成には、放出するSiがSiバルクになるとした時を基準にすると、7〜8eVのエネルギーが必要である。SiC基板表面近傍でも、およそ5eVのエネルギーが必要である。それに対し、C欠陥の生成は、放出するCがCバルクになるとした時を基準にすると、およそ4eVのエネルギーで出現する。更に、SiC基板表面では、0.75〜2eVという低いエネルギーで出現してしまう。上記のプロセスに於いて、C欠陥が大量に発生するのは、そもそも、SiC基板表面やSiO2との界面、金属との界面に於いて、C欠陥が出来易いからである。
また、実際の4H構造基板MOSFETでは、1×1018/cm3以上の界面状態が報告されることが多い。基板内C欠陥は、電子を最大4つ出し入れする能力があるので、C欠陥量にして、2.5×1017/cm3以上に相当する。例えば、8.9×1016/cm3(面密度2×1011/cm2換算)以上、8.9×1019/cm3(面密度2×1013/cm2換算)以下程度に分布している。これは、C欠陥量にして、2.2×1016/cm3以上、2.3×1019/cm3以下に相当する。但し、最大値としては、上記の8.9×1019/cm3以下と考えておくべきである。これは、SiO2の製膜にも依存している。SiO2の製膜、SiO2剥離、電極金属製膜(Ni、Ti、Alなど)によっても、同様にC欠陥が生成されてしまう。
ここで、モノレイヤーの意味は、面に垂直方向に一原子のみがある構造である。たとえば、4H−SiCのSi面上の、最表面のSiの一部の真上に、一つのCが吸着した構造が挙げられる。また最表面のSiの一部を窒素が置換した構造なども例として挙げられる。
上記実施の形態をDiMOSFETに適用した実施例1について、以下、図面を用いて説明する。
以上から、低温プロセスにて、低接触抵抗の(n+)SiC/電極の界面が形成出来る。
本実施例1における半導体装置の製造方法の要部工程を示すフローチャートを図3に示す。図3において、実施例1における半導体装置の製造方法は、(n−)SiC膜形成工程(S100)と、(p−)化用のイオン注入工程(S102)と、(n+)化用のイオン注入工程(S104)と、(p+)化用のイオン注入工程(S106)と、活性化高温アニール工程(S108)と、絶縁膜形成工程(S110)と、炭素イオン注入工程(S112)と、電極(ソース電極)形成工程(S114)と、界面形成のための低温アニール工程(S116)と、電極(ゲート電極)形成工程(S118)と、裏面Cイオン注入工程(S120)、電極(ドレイン電極)形成工程(S122)と、アニール工程(S124)という一連の工程を実施する。
あるいは、裏面と電極(ドレイン)との界面形成のための炭素イオン注入工程(S120)を、上記の炭素イオン注入(S112)と同時に行っても良い。この時、二つのアニール工程(S116)及び(S124)を同時に行うことが出来るように、電極形成(S114)、(S120)、(S122)を連続して行い、その後、低温アニールを一回行うことになる。
前記実施例1では、(n−)SiC半導体層202にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。
すなわち、以下、前記実施の形態をDiMOSFET・エピChに適用した実施例2について、図面を用いて説明する。
上述した各実施例では、DiMOSFETについて説明した。しかし、適用可能な半導体装置は、これに限るものではない。実施例3では、一例として、IGBT(Insulated Gate Bipolar Transistor)に適用した場合について説明する。
前記実施例3では、(n−)SiC半導体層203にp型ドーパントを選択的に注入して、複数のp型SiC領域とp型SiC領域間のn型SiC領域を形成したが、これに限るものではない。この実施例4は、IGBTにおいて、実施例2における構成を適用させた場合に相当するものである。
図17に実施例4における半導体装置の製造方法の要部工程を示すフローチャートを示している。実施例1の(p−)化用のイオン注入工程(S102)の代わりに、(n−)SiC膜形成工程(S100)と(n+)化用のイオン注入工程(S104)との間に、(p−)SiC膜212形成工程(S101)と(n+)SiC膜214形成のための(n+)化用のイオン注入工程(S103)を追加した点以外は図15と同様である。
202…n−SiC半導体層
210…p−SiC半導体層
220…p+SiC半導体領域
230…n+SiC半導体領域
240…電極(ソース電極)
250…絶縁膜
260…電極(ゲート電極)
262…導電性材料電極(ドレイン電極)
Claims (5)
- 導電性材料を用いた第1の電極と、
前記第1の電極に接続され、炭素(C)が前記第1の電極との第1の界面部に面密度がピークになるように含有された、導電型がp型の第1の炭化珪素(SiC)半導体部と、
前記第1の電極に接続され、導電型がn型の第2のSiC半導体部と、
を備え、
前記第1の界面部の炭素は1モノレイヤー以下であることを特徴とする半導体装置。
- 前記導電型がn型の第2のSiC半導体部が、窒素(N)、燐(P)、及び砒素(As)のうちの少なくとも1種類の元素が、前記第1の電極との第2の界面部に面密度がピークになるように含有され、かつ前記第2の界面部の窒素、燐、砒素のうち少なくとも一つの元素は1モノレイヤー以下であることを特徴とする請求項1に記載の半導体装置。
- 前記第1の界面部の炭素濃度は、1.2×1014/cm2以上、1.8×1015/cm2以下であることを特徴とする請求項1記載の半導体装置。
- 前記第2の界面部の窒素、燐、砒素のうち少なくとも一つの元素の濃度が、1.2×1014/cm2以上、1.8×1015/cm2以下であることを特徴とする請求項2記載の半導体装置。
- SiC半導体基板表面にSiO2/SiC構造を作成する工程1と、
前記工程1の後にCをSiO2/SiC界面近傍に導入する工程2と、
前記工程2の後にSiO2の一部を除去して導電性材料を製膜する工程3と、
前記工程3の後に前記工程2に於いて導入したCを拡散させる工程4、
とを少なくとも備えたことを特徴とする半導体装置の製造方法。
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CN109065441B (zh) * | 2013-06-26 | 2023-06-30 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6189131B2 (ja) * | 2013-08-01 | 2017-08-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
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JP6790010B2 (ja) | 2018-03-21 | 2020-11-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7354028B2 (ja) * | 2020-03-13 | 2023-10-02 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
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