JP2020013981A - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
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- JP2020013981A JP2020013981A JP2019029655A JP2019029655A JP2020013981A JP 2020013981 A JP2020013981 A JP 2020013981A JP 2019029655 A JP2019029655 A JP 2019029655A JP 2019029655 A JP2019029655 A JP 2019029655A JP 2020013981 A JP2020013981 A JP 2020013981A
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- 229920001296 polysiloxane Polymers 0.000 claims abstract description 259
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000007493 shaping process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
2 インターポーザ
3 コンタクトデバイス
4 シリコーンフィル
5 ディフューザ
6 ハウジング
7 キャビティ
8 更なる充填白色シリコーン
Claims (17)
- 発光ダイオード(LED)デバイスであって、少なくともコンタクトデバイス及びLEDチップを含む当該LEDデバイスの内側部分が、少なくとも部分的に透明シリコーンフィルに埋め込まれ、当該LEDデバイスの前記内側部分が、白色シリコーンを有する白色シリコーンハウジングに収容され、当該LEDデバイスの前記内側部分のうち少なくとも前記コンタクトデバイスが、少なくとも部分的に前記白色シリコーンに埋め込まれ、さらに前記LEDチップが部分的に前記白色シリコーンに埋め込まれていることを特徴とする、LEDデバイス。
- 当該LEDデバイスの前記内側部分は更にインターポーザを有し、さらに該インターポーザが少なくとも部分的に前記白色シリコーンに埋め込まれている、請求項1に記載のLEDデバイス。
- 前記LEDチップは部分的にのみ前記透明シリコーンフィルに埋め込まれている、請求項1又は2に記載のLEDデバイス。
- 前記インターポーザは部分的に前記透明シリコーンフィルに埋め込まれている、請求項2に記載のLEDデバイス。
- 請求項1乃至4のいずれかに記載のLEDデバイスを製造する方法であって、
前記LEDデバイスの前記内側部分を少なくとも部分的に透明シリコーンフィルで包囲する工程であり、それにより、少なくとも前記コンタクトデバイスが、透明シリコーンフィルで包囲されずに開放されたままにされる、工程と、
前記透明シリコーンフィルを部分的に囲んで前記白色シリコーンを形作る工程であり、それにより、前記コンタクトデバイスとは反対側の前記LEDデバイスの面が開放されたままにされる、工程と、
を有する方法。 - 前記LEDデバイスの前記内側部分を少なくとも部分的に透明シリコーンフィルで包囲する工程と、前記透明シリコーンフィルを部分的に囲んで前記白色シリコーンを形作る工程との間に、前記コンタクトデバイスとは反対側の前記LEDデバイスの面に、拡散するように構成されたシリコーンからなるディフューザが付与される、請求項5に記載の方法。
- 前記透明シリコーンフィルを部分的に囲んで前記白色シリコーンを形作る工程の後に、前記コンタクトデバイスとは反対側の前記LEDデバイスの面に、拡散するように構成されたシリコーンからなるディフューザが付与される、請求項5に記載の方法。
- 前記LEDデバイスの前記内側部分を少なくとも部分的に透明シリコーンフィルで包囲する工程において、さらに前記LEDチップが少なくとも部分的に、前記LEDデバイスの前記内側部分を部分的に透明シリコーンフィルで包囲することから開放されたままにされる、請求項5乃至7のいずれか一項に記載の方法。
- 前記LEDデバイスは更にインターポーザを有し、前記LEDデバイスの前記内側部分を少なくとも部分的に透明シリコーンフィルで包囲する工程において、さらに前記インターポーザが少なくとも部分的に、前記LEDデバイスの前記内側部分を部分的に透明シリコーンフィルで包囲することから開放されたままにされる、請求項5乃至8のいずれか一項に記載の方法。
- 前記透明シリコーンフィルを囲んで前記白色シリコーンを形作る工程は、オーバーモールドによって行われる、請求項5乃至9のいずれかに記載の方法。
- 請求項1乃至4のいずれかに記載のLEDデバイスを製造する方法であって、
白色シリコーンからハウジングを製造する工程であり、該ハウジングはキャビティを有する、工程と、
前記キャビティ内に更なる白色シリコーンを充填する工程であり、前記キャビティが部分的にのみ充填される、工程と、
前記キャビティ内に前記LEDデバイスの前記内側部分を配置する工程であり、前記LEDデバイスの前記内側部分のうち少なくとも前記コンタクトデバイスが、前記充填された更なる白色シリコーンによって包囲される、工程と、
前記透明シリコーンフィルを充填する工程と、
を有する方法。 - 前記キャビティ内に前記LEDデバイスの前記内側部分を配置する工程と、前記透明シリコーンフィルを充填する工程との間に、前記充填された更なる白色シリコーンの硬化工程が行われる、請求項11に記載の方法。
- 前記透明シリコーンフィルの頂面上にディフューザが配置される、請求項11又は12に記載の方法。
- 前記透明シリコーンフィルが硬化される、請求項13に記載の方法。
- 前記透明シリコーンフィル及び前記充填された更なる白色シリコーンが並行して硬化される、請求項11又は14に記載の方法。
- 前記キャビティ内に更なる白色シリコーンを充填する工程において、前記キャビティ内に充填される前記更なる白色シリコーンの量は、前記LEDデバイスの前記内側部分のうち、前記コンタクトデバイスに加えて、インターポーザが少なくとも部分的に、充填される前記更なる白色シリコーンに包囲される多さである、請求項11乃至15のいずれか一項に記載の方法。
- 前記キャビティ内に更なる白色シリコーンを充填する工程において、前記キャビティ内に充填される前記更なる白色シリコーンの量は、前記LEDデバイスの前記内側部分のうち、前記コンタクトデバイス及びインターポーザに加えて、前記LEDチップが部分的に、充填される前記更なる白色シリコーンに包囲される多さである、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18184173.5A EP3598510B1 (en) | 2018-07-18 | 2018-07-18 | Light emitting diode device and producing methods thereof |
EP18184173.5 | 2018-07-18 |
Publications (2)
Publication Number | Publication Date |
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JP2020013981A true JP2020013981A (ja) | 2020-01-23 |
JP6906000B2 JP6906000B2 (ja) | 2021-07-21 |
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JP2019029655A Active JP6906000B2 (ja) | 2018-07-18 | 2019-02-21 | Ledデバイス及びその製造方法 |
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US (2) | US11107959B2 (ja) |
EP (1) | EP3598510B1 (ja) |
JP (1) | JP6906000B2 (ja) |
KR (1) | KR102239105B1 (ja) |
CN (1) | CN110739384B (ja) |
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- 2018-07-18 EP EP18184173.5A patent/EP3598510B1/en active Active
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- 2019-02-15 US US16/276,980 patent/US11107959B2/en active Active
- 2019-02-21 JP JP2019029655A patent/JP6906000B2/ja active Active
- 2019-03-08 KR KR1020190026909A patent/KR102239105B1/ko active IP Right Grant
- 2019-03-15 CN CN201910199493.9A patent/CN110739384B/zh active Active
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JP2013038187A (ja) * | 2011-08-05 | 2013-02-21 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
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JP2017501578A (ja) * | 2013-12-18 | 2017-01-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Led蛍光体パッケージ用の反射性はんだマスク層 |
JP2017520118A (ja) * | 2014-06-19 | 2017-07-20 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 小型光源を有する波長変換発光デバイス |
JP2016225515A (ja) * | 2015-06-01 | 2016-12-28 | 日亜化学工業株式会社 | 発光装置 |
JP2017108092A (ja) * | 2015-11-30 | 2017-06-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017152475A (ja) * | 2016-02-23 | 2017-08-31 | スタンレー電気株式会社 | 発光装置 |
JP2018014480A (ja) * | 2016-07-07 | 2018-01-25 | 日東電工株式会社 | 反射層および蛍光体層付光半導体素子 |
WO2018108734A1 (en) * | 2016-12-15 | 2018-06-21 | Lumileds Holding B.V. | Led module with high near field contrast ratio |
JP2018107170A (ja) * | 2016-12-22 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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US20200028039A1 (en) | 2020-01-23 |
CN110739384A (zh) | 2020-01-31 |
US20210391512A1 (en) | 2021-12-16 |
EP3598510B1 (en) | 2022-02-23 |
EP3598510A1 (en) | 2020-01-22 |
US11107959B2 (en) | 2021-08-31 |
JP6906000B2 (ja) | 2021-07-21 |
KR20200010007A (ko) | 2020-01-30 |
KR102239105B1 (ko) | 2021-04-13 |
CN110739384B (zh) | 2023-03-21 |
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