JP2019537255A - 少なくとも1つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 - Google Patents
少なくとも1つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 64
- 230000005855 radiation Effects 0.000 claims abstract description 60
- 229910052738 indium Inorganic materials 0.000 claims description 28
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 14
- 230000003595 spectral effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
− 半導体積層体を設けるステップであって、半導体積層体が、基板上に成長されている、または基板上に成長させ、かつ、第1の半導体材料を含み、第1の半導体材料が動作時に第1の放射を放出する、ステップと、
− 半導体積層体の上に少なくとも部分的に変換要素を冷間法によって形成するステップと、
を含み、
変換要素が第2の半導体材料を含み、
動作時に第2の半導体材料が第1の放射を第2の放射に変換する。
本特許出願は、米国出願番号62/425,574の出願の優先権を主張し、この文書の開示内容は参照により本明細書に組み込まれている。
1 半導体積層体
2 変換要素
3 冷間法
4 基板
5 接着剤または接着剤層
6 第3の半導体材料
7 放射の和
11 第1の半導体材料
12 第1の放射
21 第2の半導体材料
22 第2の放射
23 変換要素の表面
61 第3の放射
Claims (18)
- 少なくとも1つのオプトエレクトロニクス半導体部品を製造する方法であって、
− 半導体積層体を設けるステップであって、前記半導体積層体が第1の半導体材料を含み、前記第1の半導体材料が動作時に第1の放射を放出する、ステップと、
− 前記半導体積層体の上に少なくとも部分的に変換要素を冷間法によって形成するステップと、
を含み、
前記変換要素が第2の半導体材料を含み、
動作時に前記第2の半導体材料が前記第1の放射を第2の放射に変換する、
方法。 - 前記第1の半導体材料および前記第2の半導体材料それぞれがインジウムを含み、前記第1の半導体材料のインジウム含有量が、前記第2の半導体材料のインジウム含有量より少ない、
請求項1に記載の方法。 - 前記第2の半導体材料の前記インジウム含有量が、30原子%と60原子%の間(両端値を含む)である、
請求項1または請求項2のいずれか1項に記載の方法。 - 前記変換要素が、20nm〜200nmの層厚を有する層として形成される、
請求項1から請求項3のいずれか1項に記載の方法。 - 前記冷間法が、550℃の最大温度で実行される、
請求項1から請求項4のいずれか1項に記載の方法。 - 前記冷間法が、スパッタリングまたはパルスレーザ堆積法である、
請求項1から請求項5のいずれか1項に記載の方法。 - 前記第2の半導体材料が、次の群、すなわち、InGaN、AlGaInN、AlGaInAsP、から選択される、
請求項1から請求項6のいずれか1項に記載の方法。 - 前記半導体積層体が、基板上にエピタキシャル成長される、
請求項1から請求項7のいずれか1項に記載の方法。 - 前記第1の半導体材料が、AlnIn1−n−mGamNであり0≦n≦1、0≦m≦1、n+m≦1である、
請求項1から請求項8のいずれか1項に記載の方法。 - 前記第1の放射が、青色のスペクトル領域および/または紫外線のスペクトル領域の主波長を有する、
請求項1から請求項9のいずれか1項に記載の方法。 - 前記第2の放射が、前記第1の放射の前記主波長より大きい主波長を有する、
請求項1から請求項10のいずれか1項に記載の方法。 - 前記変換要素を形成した後に集合体が形成され、次いで、複数のオプトエレクトロニクス半導体部品を形成する目的で前記集合体が切り離される、
請求項1から請求項11のいずれか1項に記載の方法。 - 前記変換要素が表面を備えており、前記表面が、自身が前記半導体積層体とは反対を向くように配置されており、構造化される、
請求項1から請求項12のいずれか1項に記載の方法。 - 前記オプトエレクトロニクス半導体部品が、動作時に白色放射を放出する、
請求項1から請求項13のいずれか1項に記載の方法。 - 前記変換要素と前記半導体積層体との間に接着剤層が配置されていない、
請求項1から請求項14のいずれか1項に記載の方法。 - 前記変換要素が前記半導体積層体の表面全体に形成され、次いで、前記変換要素が前記表面から部分的に除去され、次いで、前記除去された変換要素の領域に第3の半導体材料が形成され、前記第3の半導体材料が、動作時に第3の放射を放出し、前記第2の放射と前記第3の放射が互いに異なる、
請求項1から請求項15のいずれか1項に記載の方法。 - 前記変換要素の前記除去が、レーザリフトオフによって実行される、
請求項16に記載の方法。 - 請求項1から請求項17のいずれか1項に記載の方法によって製造可能であるオプトエレクトロニクス半導体部品。
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US201662425574P | 2016-11-22 | 2016-11-22 | |
US62/425,574 | 2016-11-22 | ||
PCT/EP2017/079616 WO2018095816A1 (en) | 2016-11-22 | 2017-11-17 | Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component |
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US (1) | US10665760B2 (ja) |
JP (1) | JP2019537255A (ja) |
DE (1) | DE112017005899T5 (ja) |
WO (1) | WO2018095816A1 (ja) |
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US20200194631A1 (en) | 2018-12-14 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device |
DE102019101417A1 (de) * | 2019-01-21 | 2020-07-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil |
JP7431110B2 (ja) * | 2020-06-11 | 2024-02-14 | 新光電気工業株式会社 | 発光装置 |
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DE112017005899T5 (de) | 2019-08-01 |
US10665760B2 (en) | 2020-05-26 |
WO2018095816A1 (en) | 2018-05-31 |
US20180158993A1 (en) | 2018-06-07 |
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