JP2007273989A - 白色発光素子 - Google Patents
白色発光素子 Download PDFInfo
- Publication number
- JP2007273989A JP2007273989A JP2007086691A JP2007086691A JP2007273989A JP 2007273989 A JP2007273989 A JP 2007273989A JP 2007086691 A JP2007086691 A JP 2007086691A JP 2007086691 A JP2007086691 A JP 2007086691A JP 2007273989 A JP2007273989 A JP 2007273989A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- thin film
- white light
- light
- film pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 110
- 238000006243 chemical reaction Methods 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 42
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- VQMRBSSBYLNOKW-UHFFFAOYSA-N europium(3+) trisilicate Chemical group [Si]([O-])([O-])([O-])[O-].[Eu+3].[Si]([O-])([O-])([O-])[O-].[Si]([O-])([O-])([O-])[O-].[Eu+3].[Eu+3].[Eu+3] VQMRBSSBYLNOKW-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 229910052914 metal silicate Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- -1 AlGaInN Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明による白色発光素子は、基板と、上記基板上に順次形成されたn型半導体層、活性層及びp型半導体層を有して第1放出光を出す発光構造物と、上記第1放出光の一部を吸収して他の波長の第2放出光に変換させるよう配置された波長変換用薄膜パターンとを含み、上記波長変換用薄膜パターンは第1放出光を選択的に通過させるオープン領域を形成する。
【選択図】図3
Description
102 n型半導体層
103、203 活性層
104 p型半導体層
107、207 波長変換用薄膜パターン
150、250 発光構造物
Claims (16)
- 基板と、
前記基板上に順次形成されたn型半導体層、活性層及びp型半導体層を有し第1放出光を出す発光構造物と、
前記第1放出光の一部を吸収して他の波長の第2放出光に変換させるよう配置された波長変換用薄膜パターンとを含み、
前記波長変換用薄膜パターンは、第1放出光を選択的に通過させるオープン領域を形成することを特徴とする白色発光素子。 - 前記波長変換用薄膜パターンは、前記p型半導体層の上面に形成されることを特徴とする請求項1に記載の白色発光素子。
- 前記波長変換用薄膜パターンは、前記基板の下面に形成されることを特徴とする請求項1に記載の白色発光素子。
- 前記波長変換用薄膜パターンは、前記発光構造物と基板との間に形成されることを特徴とする請求項1に記載の白色発光素子。
- 前記第1放出光と第2放出光とが結合して白色光を出すことを特徴とする請求項1に記載の白色発光素子。
- 前記p型半導体、活性層及びn型半導体は、窒化物半導体からなることを特徴とする請求項1に記載の白色発光素子。
- 前記波長変換用薄膜パターンは、前記波長変換用薄膜に入射した第1放出光を90%以上吸収することを特徴とする請求項1に記載の白色発光素子。
- 前記波長変換用薄膜パターンは、同一物質で構成されることを特徴とする請求項1に記載の白色発光素子。
- 前記波長変換用薄膜パターンは、波長を変換できる蛍光体、金属シリケート、酸化物、または半導体であることを特徴とする請求項1に記載の白色発光素子。
- 前記半導体は、AlGaInPまたはZnSeであることを特徴とする請求項9に記載の白色発光素子。
- 前記金属シリケートは、ユーロピウム−シリケートであることを特徴とする請求項9に記載の白色発光素子。
- 前記ユーロピウム−シリケートは、EuxSiyOz(0<x<30、0<y<30、0<z<30)の組成式を有する物質からなることを特徴とする請求項11に記載の白色発光素子。
- 前記第1放出光は青色光で、
前記第2放出光は緑色から赤色に至る波長帯の光、または黄色光であることを特徴とする請求項1に記載の白色発光素子。 - 前記第1放出光は青色から緑色に至る波長帯の光で、
前記第2放出光は赤色光であることを特徴とする請求項1に記載の白色発光素子。 - 前記基板と反対側の前記発光構造物の上面方向から白色光が放出されることを特徴とする請求項1に記載の白色発光素子。
- 前記発光構造物と反対側の前記基板の下面方向から白色光が放出されることを特徴とする請求項1に記載の白色発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060029828A KR100723233B1 (ko) | 2006-03-31 | 2006-03-31 | 백색 발광 소자 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011122255A Division JP5294223B2 (ja) | 2006-03-31 | 2011-05-31 | 白色発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007273989A true JP2007273989A (ja) | 2007-10-18 |
Family
ID=38278673
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007086691A Pending JP2007273989A (ja) | 2006-03-31 | 2007-03-29 | 白色発光素子 |
JP2011122255A Expired - Fee Related JP5294223B2 (ja) | 2006-03-31 | 2011-05-31 | 白色発光素子 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011122255A Expired - Fee Related JP5294223B2 (ja) | 2006-03-31 | 2011-05-31 | 白色発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070228931A1 (ja) |
JP (2) | JP2007273989A (ja) |
KR (1) | KR100723233B1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176780A (ja) * | 2008-01-21 | 2009-08-06 | Sharp Corp | 発光装置の色度調整方法 |
JP2011211084A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 半導体発光素子および半導体発光素子アレイ |
JP2014157990A (ja) * | 2013-02-18 | 2014-08-28 | Toshiba Corp | 半導体発光装置 |
WO2016021971A1 (ko) * | 2014-08-07 | 2016-02-11 | 엘지이노텍 주식회사 | 형광체 플레이트 및 이를 포함하는 조명장치 |
JP2019537255A (ja) * | 2016-11-22 | 2019-12-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 少なくとも1つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100799859B1 (ko) * | 2006-03-22 | 2008-01-31 | 삼성전기주식회사 | 백색 발광 소자 |
US7781779B2 (en) * | 2007-05-08 | 2010-08-24 | Luminus Devices, Inc. | Light emitting devices including wavelength converting material |
KR20090002835A (ko) | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
US7915627B2 (en) * | 2007-10-17 | 2011-03-29 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
CN102057504A (zh) * | 2008-06-05 | 2011-05-11 | 3M创新有限公司 | 接合有半导体波长转换器的发光二极管 |
US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
KR100993045B1 (ko) * | 2009-10-23 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 칩 및 발광소자 패키지 |
KR101603777B1 (ko) | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
KR101068867B1 (ko) * | 2009-05-28 | 2011-09-30 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 |
DE102009023351A1 (de) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US8651692B2 (en) | 2009-06-18 | 2014-02-18 | Intematix Corporation | LED based lamp and light emitting signage |
KR101055761B1 (ko) | 2009-12-18 | 2011-08-11 | 서울반도체 주식회사 | 형광체 시트를 갖는 발광장치 및 그 제조방법 |
KR101726807B1 (ko) * | 2010-11-01 | 2017-04-14 | 삼성전자주식회사 | 반도체 발광소자 |
DE102010051286A1 (de) | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102010051287A1 (de) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
CN103597269B (zh) * | 2011-06-10 | 2016-12-14 | 皇家飞利浦有限公司 | 用于呈现可见图案的磷光体增强光源和照明装置 |
DE102013200509A1 (de) * | 2013-01-15 | 2014-07-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR102075713B1 (ko) * | 2013-07-15 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
TWI563691B (en) * | 2014-07-02 | 2016-12-21 | Playnitride Inc | Epitaxy base and light-emitting device |
DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
KR102399381B1 (ko) * | 2015-05-20 | 2022-05-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
US10244599B1 (en) | 2016-11-10 | 2019-03-26 | Kichler Lighting Llc | Warm dim circuit for use with LED lighting fixtures |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10163526A (ja) * | 1996-11-27 | 1998-06-19 | Matsushita Electron Corp | 発光素子及び発光ダイオード |
JP2004363342A (ja) * | 2003-06-05 | 2004-12-24 | Nichia Chem Ind Ltd | 半導体発光素子およびその製造方法 |
JP2005311395A (ja) * | 2005-07-14 | 2005-11-04 | Matsushita Electric Ind Co Ltd | 半導体発光装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
JP2001177145A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | 半導体発光素子およびその製造方法 |
TW480744B (en) * | 2000-03-14 | 2002-03-21 | Lumileds Lighting Bv | Light-emitting diode, lighting device and method of manufacturing same |
US6603258B1 (en) * | 2000-04-24 | 2003-08-05 | Lumileds Lighting, U.S. Llc | Light emitting diode device that emits white light |
JP2002076434A (ja) * | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
JP2002170989A (ja) * | 2000-12-04 | 2002-06-14 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP4822482B2 (ja) * | 2001-05-23 | 2011-11-24 | シチズン電子株式会社 | 発光ダイオードおよびその製造方法 |
JP2003332620A (ja) * | 2002-05-08 | 2003-11-21 | Mitsubishi Cable Ind Ltd | 発光装置、GaN系半導体発光素子、およびそれらを用いた照明装置 |
JP4507636B2 (ja) * | 2003-03-27 | 2010-07-21 | 日亜化学工業株式会社 | 半導体発光素子 |
CN100511732C (zh) * | 2003-06-18 | 2009-07-08 | 丰田合成株式会社 | 发光器件 |
US6956247B1 (en) * | 2004-05-26 | 2005-10-18 | Lumileds Lighting U.S., Llc | Semiconductor light emitting device including photonic band gap material and luminescent material |
JP2007080996A (ja) * | 2005-09-13 | 2007-03-29 | Sony Corp | GaN系半導体発光素子及びその製造方法 |
JP5523616B2 (ja) * | 2013-06-21 | 2014-06-18 | 株式会社イノアックコーポレーション | 車両用エンジンアンダーカバー |
JP2017057239A (ja) * | 2015-09-14 | 2017-03-23 | 三洋化成工業株式会社 | コア/シェル型硬化剤粒子および熱硬化性樹脂組成物 |
-
2006
- 2006-03-31 KR KR1020060029828A patent/KR100723233B1/ko not_active IP Right Cessation
-
2007
- 2007-03-29 JP JP2007086691A patent/JP2007273989A/ja active Pending
- 2007-03-30 US US11/730,246 patent/US20070228931A1/en not_active Abandoned
-
2011
- 2011-05-31 JP JP2011122255A patent/JP5294223B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10163526A (ja) * | 1996-11-27 | 1998-06-19 | Matsushita Electron Corp | 発光素子及び発光ダイオード |
JP2004363342A (ja) * | 2003-06-05 | 2004-12-24 | Nichia Chem Ind Ltd | 半導体発光素子およびその製造方法 |
JP2005311395A (ja) * | 2005-07-14 | 2005-11-04 | Matsushita Electric Ind Co Ltd | 半導体発光装置の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176780A (ja) * | 2008-01-21 | 2009-08-06 | Sharp Corp | 発光装置の色度調整方法 |
JP2011211084A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 半導体発光素子および半導体発光素子アレイ |
JP2014157990A (ja) * | 2013-02-18 | 2014-08-28 | Toshiba Corp | 半導体発光装置 |
WO2016021971A1 (ko) * | 2014-08-07 | 2016-02-11 | 엘지이노텍 주식회사 | 형광체 플레이트 및 이를 포함하는 조명장치 |
US10451245B2 (en) | 2014-08-07 | 2019-10-22 | Lg Innotek Co., Ltd. | Phosphor plate and lighting device including the same |
JP2019537255A (ja) * | 2016-11-22 | 2019-12-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 少なくとも1つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
Also Published As
Publication number | Publication date |
---|---|
US20070228931A1 (en) | 2007-10-04 |
JP2011166182A (ja) | 2011-08-25 |
JP5294223B2 (ja) | 2013-09-18 |
KR100723233B1 (ko) | 2007-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5294223B2 (ja) | 白色発光素子 | |
US8399876B2 (en) | Semiconductor dies, light-emitting devices, methods of manufacturing and methods of generating multi-wavelength light | |
Koike et al. | Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications | |
KR100799859B1 (ko) | 백색 발광 소자 | |
JP4772869B2 (ja) | ナノワイヤ蛍光体を採用した発光素子 | |
KR101662010B1 (ko) | 발광 소자 | |
JP2008141118A (ja) | 半導体白色発光装置 | |
KR20110042126A (ko) | 파장 변환 반도체 발광 장치 및 필터를 포함하는 광원 | |
JP5165702B2 (ja) | 窒化物半導体発光素子 | |
JP2002368265A (ja) | Iii族窒化物系化合物半導体発光素子 | |
JP2007123731A (ja) | 半導体発光素子および半導体発光装置 | |
JP2006190963A (ja) | 発光ダイオード及びその構造 | |
KR20080089859A (ko) | 질화물 반도체 발광소자 및 그 제조 방법 | |
KR20010068216A (ko) | 질화물 반도체 백색 발광소자 | |
KR100826379B1 (ko) | 모노리식 백색 발광소자 | |
JP3511923B2 (ja) | 発光素子 | |
JP2007142318A (ja) | 発光素子 | |
JP2008041807A (ja) | 白色光源 | |
JP4458870B2 (ja) | 蛍光発光装置、蛍光発光素子、および蛍光体 | |
JP4503316B2 (ja) | 多色光の発光方法 | |
JP2003197969A (ja) | GaN系半導体発光素子およびそれを用いた発光装置 | |
JP2008016591A (ja) | 半導体発光素子 | |
JP4911082B2 (ja) | 表示装置および照明装置 | |
KR20120011198A (ko) | 발광 소자, 발광 소자 패키지 및 발광 소자의 제조방법 | |
KR101562928B1 (ko) | 발광 다이오드 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100831 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101126 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110531 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110606 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20110624 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120807 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120810 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120813 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130318 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20130325 |