JP2019186244A - 基板処理装置、基板処理方法、及び記憶媒体 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000003672 processing method Methods 0.000 title claims description 6
- 239000007788 liquid Substances 0.000 claims abstract description 329
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- 230000006866 deterioration Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 6
- 238000004148 unit process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 65
- 238000010586 diagram Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 101150112309 Spin1 gene Proteins 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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Abstract
Description
図1は、本実施形態に係る基板処理システムの概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
続いて、図2〜図5を参照して、基板処理システム1が含む基板処理装置10の構成を説明する。図2に示すように、基板処理装置10は、処理液によりウェハWを処理する(液処理を行う)複数の処理ユニット16(基板処理部)と、処理ユニット16に処理液を供給する供給機構70と、これらを制御する制御装置4(図1及び図4参照。詳細は後述)と、を有している。
供給機構70は、第1供給機構71と、第2供給機構72とを有する。第1供給機構71は、第1処理液を貯留するタンク102(第1貯留部)と、処理液供給部103と、排出部110と、補充部112と、を有している。第1処理液は、ウェハWの液処理に用いられる処理液であり、例えばDHF(Diluted Hydrofluoric acid)である。処理液供給部103は、制御装置4の制御部18の制御に応じてタンク102内の第1処理液を複数の処理ユニット16に供給する。処理液供給部103は、タンク102から出てタンク102に戻る循環ライン104と、循環ライン104から各処理ユニット16に向かって延びる分岐ライン105と、循環ライン104に設けられたポンプ106及びフィルタ108とを有する。分岐ライン105は、循環ライン104を流れる第1処理液を対応する処理ユニット16に供給する。各分岐ライン105には、必要に応じて、流量制御弁等の流量調整機構及びフィルタ等を設けることができる。ポンプ106は、タンク102から出て循環ライン104を通りタンク102に戻る循環流を形成する。フィルタ108は、ポンプ106の下流側に設けられ、処理液に含まれるパーティクル等の汚染物質を除去する。循環ライン104には、必要に応じて補機類(例えばヒータ等)がさらに設けられてもよい。
図3に示すように、処理ユニット16は、チャンバ20と、基板保持機構30と、処理液吐出部40と、回収カップ50と、供給路開閉機構60とを有する。
制御部18は、図4に示すように、機能モジュールとして、供給制御部81と、基板処理制御部82と、判定部83と、排出制御部84と、補充制御部85とを含む。
続いて、プロセスジョブと並行して実施される液交換処理の一例について、図6を参照して説明する。図6の処理が行われる前提として、各処理ユニット16においてはプロセスジョブが実施されているとする。図6の処理は、複数種類の処理液がある場合、それぞれについて個別に行われるものである。ここでは、第1処理液の液交換処理について説明する。
上述したように、本実施形態に係る基板処理装置10は、処理液によりウェハWを処理する処理ユニット16と、処理液を貯留するタンク102,202と、タンク102,202内の処理液を処理ユニット16に供給する処理液供給部103,203と、タンク102,202内の処理液を排出する排出部110,210と、タンク102,202に処理液を補充する補充部112,212と、制御部18と、を備え、制御部18は、処理液が処理ユニット16に供給されるように処理液供給部103,203を制御すると共に、処理液によってウェハWが処理されるように処理ユニット16を制御してプロセスジョブを実施することと、プロセスジョブの実施中において所定の液交換実施条件が成立すると、タンク102,202内の処理液が排出されるように排出部110,210を制御すると共に、タンク102,202内に新たな処理液が補充されるように補充部112,212を制御し、液交換処理をプロセスジョブと並行して実施することと、を実行するように構成されている。
以上、本開示に係る実施形態について説明したが、本発明の要旨の範囲内で種々の変形を上記の実施形態に加えてもよい。例えば、基板処理装置10において、処理ユニット16は、第1処理液と、該第1処理液とは異なる第2処理液とを処理液としてウェハWを処理し、貯留部は、第1処理液を貯留するタンク102と、第2処理液を貯留するタンク202と、を有し、制御部18は、第1処理液についての液交換実施条件の成立予定時間と、第2処理液についての液交換実施条件の成立予定時間との差異が所定時間内である場合に、タンク102における第1処理液の液交換処理と、タンク202における第2処理液の液交換処理とが並行して実施されるように、排出部110,210及び補充部112,212を制御してもよい。
Claims (7)
- 処理液により基板を処理する基板処理部と、
前記処理液を貯留する貯留部と、
前記貯留部内の前記処理液を前記基板処理部に供給する処理液供給部と、
前記貯留部内の前記処理液を排出する排出部と、
前記貯留部に前記処理液を補充する補充部と、
制御部と、を備え、
前記制御部は、
前記処理液が前記基板処理部に供給されるように前記処理液供給部を制御すると共に、前記処理液によって前記基板が処理されるように前記基板処理部を制御してプロセスジョブを実施することと、
前記プロセスジョブの実施中において所定の液交換実施条件が成立すると、前記貯留部内の前記処理液が排出されるように前記排出部を制御すると共に、前記貯留部内に新たな前記処理液が補充されるように前記補充部を制御し、液交換処理を前記プロセスジョブと並行して実施することと、を実行するように構成されている、基板処理装置。 - 前記制御部は、前記貯留部に貯留された前記処理液の劣化状態に係る第1条件を満たし、且つ、前記プロセスジョブの実施状況に係る第2条件を満たす前記処理液について、前記所定の液交換実施条件が成立していると判定する、請求項1記載の基板処理装置。
- 前記制御部は、前記プロセスジョブにおける使用が終了している前記処理液について、前記第2条件を満たしていると判定する、請求項2記載の基板処理装置。
- 前記制御部は、
複数の基板を処理単位として前記プロセスジョブを実施し、
前記プロセスジョブの実施中において、前記複数の基板のうち前記処理液によって最後に処理される基板の処理中に該処理を適切に行うことができないトラブルが発生した場合、該処理液について前記第2条件を満たしていると判定する、請求項2又は3記載の基板処理装置。 - 前記基板処理部は、第1処理液と、該第1処理液とは異なる第2処理液とを前記処理液として前記基板を処理し、
前記貯留部は、前記第1処理液を貯留する第1貯留部と、前記第2処理液を貯留する第2貯留部と、を有し、
前記制御部は、
前記第1処理液についての前記液交換実施条件の成立予定時間と、前記第2処理液についての前記液交換実施条件の成立予定時間との差異が所定時間内である場合に、前記第1貯留部における前記第1処理液の前記液交換処理と、前記第2貯留部における前記第2処理液の前記液交換処理とが並行して実施されるように、前記排出部及び前記補充部を制御する、請求項1〜4のいずれか一項記載の基板処理装置。 - 処理液によって基板を処理するプロセスジョブを実施する第1工程と、
前記プロセスジョブにおいて所定の液交換実施条件が成立した場合に、前記処理液を貯留する貯留部内の前記処理液を排出すると共に前記貯留部内に新たな前記処理液を補充する液交換処理を、前記プロセスジョブと並行して実施する第2工程と、を含む基板処理方法。 - 請求項6記載の基板処理方法を装置に実行させるためのプログラムを記憶したコンピュータ読み取り可能な記憶媒体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018070762A JP7122140B2 (ja) | 2018-04-02 | 2018-04-02 | 基板処理装置、基板処理方法、及び記憶媒体 |
TW108110415A TWI781307B (zh) | 2018-04-02 | 2019-03-26 | 基板處理裝置、基板處理方法及記錄媒體 |
KR1020190035137A KR102644203B1 (ko) | 2018-04-02 | 2019-03-27 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
US16/371,286 US11282719B2 (en) | 2018-04-02 | 2019-04-01 | Substrate processing apparatus, substrate processing method and recording medium of performing liquid exchange processing according to liquid exchange condition |
CN201910262248.8A CN110349882B (zh) | 2018-04-02 | 2019-04-02 | 基板处理装置、基板处理方法以及存储介质 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10177982A (ja) * | 1996-12-18 | 1998-06-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007273791A (ja) * | 2006-03-31 | 2007-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2015201626A (ja) * | 2014-04-01 | 2015-11-12 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855792A (en) * | 1997-05-14 | 1999-01-05 | Integrated Process Equipment Corp. | Rinse water recycling method for semiconductor wafer processing equipment |
JP3254518B2 (ja) * | 1997-11-19 | 2002-02-12 | 東京エレクトロン株式会社 | 洗浄処理方法及び洗浄処理システム |
US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
JP2001269868A (ja) * | 2000-03-28 | 2001-10-02 | Ebara Corp | 純水回収・再生・供給装置 |
JP4149166B2 (ja) * | 2002-01-08 | 2008-09-10 | 東京エレクトロン株式会社 | 処理システム及び処理方法 |
US6851436B1 (en) * | 2002-06-28 | 2005-02-08 | Lam Research Corporation | Substrate processing using a fluid re-circulation system in a wafer scrubbing system |
US8257781B1 (en) * | 2002-06-28 | 2012-09-04 | Novellus Systems, Inc. | Electroless plating-liquid system |
JP2006269743A (ja) | 2005-03-24 | 2006-10-05 | Seiko Epson Corp | 薬液処理装置および半導体装置の製造方法 |
US7743783B2 (en) * | 2006-04-04 | 2010-06-29 | Air Liquide Electronics U.S. Lp | Method and apparatus for recycling process fluids |
JP5726784B2 (ja) * | 2012-02-24 | 2015-06-03 | 東京エレクトロン株式会社 | 処理液交換方法および基板処理装置 |
US20130260569A1 (en) | 2012-03-30 | 2013-10-03 | Lam Research Ag | Apparatus and method for liquid treatment of wafer-shaped articles |
JP6454629B2 (ja) * | 2014-12-16 | 2019-01-16 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP6370233B2 (ja) * | 2015-01-30 | 2018-08-08 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6393238B2 (ja) * | 2015-06-10 | 2018-09-19 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10177982A (ja) * | 1996-12-18 | 1998-06-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007273791A (ja) * | 2006-03-31 | 2007-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2015201626A (ja) * | 2014-04-01 | 2015-11-12 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
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US20190304811A1 (en) | 2019-10-03 |
CN110349882B (zh) | 2024-05-24 |
TW201942971A (zh) | 2019-11-01 |
CN110349882A (zh) | 2019-10-18 |
KR20190115416A (ko) | 2019-10-11 |
US11282719B2 (en) | 2022-03-22 |
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JP7122140B2 (ja) | 2022-08-19 |
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