JP2019110281A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP2019110281A JP2019110281A JP2017244303A JP2017244303A JP2019110281A JP 2019110281 A JP2019110281 A JP 2019110281A JP 2017244303 A JP2017244303 A JP 2017244303A JP 2017244303 A JP2017244303 A JP 2017244303A JP 2019110281 A JP2019110281 A JP 2019110281A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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Abstract
Description
前記回転テーブルの一面側に基板を載置するために設けられ、当該回転テーブルの回転により公転する載置台と、
前記載置台に載置された前記基板を加熱する加熱部と、
前記回転テーブルの回転により載置台が通過する領域に成膜ガスを供給して前記基板に成膜する成膜ガス供給部と、
前記回転テーブルと共に回転する部位に前記載置台を支持するように自転自在に設けられる自転軸と、
前記自転軸に設けられた従動ギアと、
前記従動ギアの公転軌道に臨んで回転し、かつ前記公転軌道の全周に沿って設けられ、前記従動ギアと磁気ギア機構を構成する駆動ギアと、
前記従動ギアの公転軌道と前記駆動ギアとの相対距離を変更するための相対距離変更機構と、
を備えることを特徴とする。
本発明に関連して行われた評価試験について説明する。評価試験1では成膜装置1と略同様の構成を備える実験装置を用いて、回転テーブル2の回転数、駆動ギア5の回転数を各々変更した場合における、回転テーブル2に載置される各ウエハWの自転速度の平均について調べた。この実験装置では、図1で説明した区画板17の厚さH1を3mm、区画板17と従動ギア4の下面との距離H2を1mm、区画板17と駆動ギア5の上面との距離を1mmに夫々設定している。従ってこの実験装置において、図9で説明した駆動ギア5と従動ギア4との公転軌道との離間距離H3は、5mmである。回転テーブル2については30rpm、60rpmまたは120rpmで回転させた。また、駆動ギア5の回転数については、回転テーブル2の回転数との差が、−0.8度/秒〜+0.8度/秒の範囲内に収まるように変更した。
1 成膜装置
11 真空容器
2 回転テーブル
3 載置台
35 ヒータ
4 従動ギア
5 駆動ギア
55 駆動ギア用昇降機構
61 原料ガスノズル
63 酸化ガスノズル
Claims (8)
- 処理容器内に設けられた回転テーブルと、
前記回転テーブルの一面側に基板を載置するために設けられ、当該回転テーブルの回転により公転する載置台と、
前記載置台に載置された前記基板を加熱する加熱部と、
前記回転テーブルの回転により載置台が通過する領域に成膜ガスを供給して前記基板に成膜する成膜ガス供給部と、
前記回転テーブルと共に回転する部位に前記載置台を支持するように自転自在に設けられる自転軸と、
前記自転軸に設けられた従動ギアと、
前記従動ギアの公転軌道に臨んで回転し、かつ前記公転軌道の全周に沿って設けられ、前記従動ギアと磁気ギア機構を構成する駆動ギアと、
前記従動ギアの公転軌道と前記駆動ギアとの相対距離を変更するための相対距離変更機構と、
を備えることを特徴とする成膜装置。 - 前記相対距離変更機構は、横方向における前記従動ギアの公転軌道に対して、前記駆動ギアを昇降させる昇降機構であることを特徴とする請求項1記載の成膜装置。
- 前記従動ギアは、自転方向に沿って全周に亘ってN極部及びS極部が交互に配列され、
前記駆動ギアは、前記公転軌道に沿って全周に亘ってN極部及びS極部が交互に配列されていることを特徴とする請求項1または2記載の成膜装置。 - 前記従動ギア及び前記駆動ギアは、各々永久磁石により磁極部が構成されていることを特徴とする請求項1ないし3のいずれか一つに記載の成膜装置。
- 前記従動ギアの各磁極部は、下面に中心部から横方向に放射状に延びるように設けられ、
前記駆動ギアの各磁極部は、前記従動ギアの下面と対向する面に配列されていることを特徴とする請求項1ないし4のいずれか一つに記載の成膜装置。 - 前記処理容器内は、真空雰囲気となるように構成され、
前記駆動ギアは、大気雰囲気側に設けられ、
前記従動ギアと駆動ギアとの間には、大気雰囲気と真空雰囲気とを仕切り、磁力線を通す材料により構成された仕切り部材が設けられていることを特徴とする請求項1ないし5のいずれか一つに記載の成膜装置。 - 前記従動ギアの公転軌道と前記駆動ギアとの相対距離は、前記基板の処理レシピに応じて変更されることを特徴とする請求項1ないし6のいずれか一つに記載の成膜装置。
- 前記処理レシピは、前記回転テーブルの回転数または前記基板の処理温度の少なくとも一方を含むことを特徴とする請求項7記載の成膜装置。
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