JP2016096220A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP2016096220A JP2016096220A JP2014230907A JP2014230907A JP2016096220A JP 2016096220 A JP2016096220 A JP 2016096220A JP 2014230907 A JP2014230907 A JP 2014230907A JP 2014230907 A JP2014230907 A JP 2014230907A JP 2016096220 A JP2016096220 A JP 2016096220A
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- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 108
- 238000012545 processing Methods 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 158
- 235000012431 wafers Nutrition 0.000 description 124
- 238000012360 testing method Methods 0.000 description 34
- 238000011156 evaluation Methods 0.000 description 31
- 238000009826 distribution Methods 0.000 description 21
- 238000001179 sorption measurement Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000001590 oxidative effect Effects 0.000 description 15
- 238000000926 separation method Methods 0.000 description 13
- 239000002994 raw material Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000002052 molecular layer Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Robotics (AREA)
Abstract
Description
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記回転テーブルの一面側におけるガス供給領域に前記処理ガスを供給し、前記公転により当該ガス供給領域を複数回繰り返し通過する基板に成膜を行うための処理ガス供給機構と、
前記回転テーブルの他面側に設けられ、当該回転テーブルの回転方向に沿って回転自在な第1の歯車と、
前記第1の歯車に噛合し、前記載置領域と共に公転するように設けられ、自転することによって基板が自転するように当該載置領域を回転させる遊星歯車からなる第2の歯車と、
前記第1の歯車を回転させて、前記基板の自転速度を調整するための回転駆動部と、
を備えたことを特徴とする。
本発明に関連した評価試験1について説明する。この評価試験1の説明では、回転テーブル2の凹部23に載置されたウエハWについて、成膜処理開始時において回転テーブル2の直径に一致するウエハWの直径をYラインと記載する。従って、Yラインは図8中に矢印A1〜A5として示した領域である。そして、このYラインに対して直交するウエハWの直径をXラインと記載する。
1 成膜装置
11 真空容器
2 回転テーブル
27 リング部材
33 ヒーター
41 自転軸
42 遊星歯車
44 公転用回転駆動部
51 第1の歯車
55 自転用回転駆動部
100 制御部
Claims (4)
- 処理ガスを基板に供給して薄膜を得る成膜装置であって、
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記回転テーブルの一面側におけるガス供給領域に前記処理ガスを供給し、前記公転により当該ガス供給領域を複数回繰り返し通過する基板に成膜を行うための処理ガス供給機構と、
前記回転テーブルの他面側に設けられ、当該回転テーブルの回転方向に沿って回転自在な第1の歯車と、
前記第1の歯車に噛合し、前記載置領域と共に公転するように設けられ、自転することによって基板が自転するように当該載置領域を回転させる遊星歯車からなる第2の歯車と、
前記第1の歯車を回転させて、前記基板の自転速度を調整するための回転駆動部と、
を備えたことを特徴とする成膜装置。 - 前記第2の歯車が設けられ、前記載置領域を回転させるための自転軸と、
前記前記自転軸を支持する軸受けと、
前記軸受けを前記回転テーブルに支持する支持部材と、
を備えることを特徴とする請求項1記載の成膜装置。 - 前記支持部材は、前記自転軸に対して回転テーブルの回転方向に離れて設けられた支柱と、
前記回転テーブルの他面から離れて設けられ、前記支柱と前記軸受けを接続する接続部と、を備え、
前記接続部の上方において、前記自転軸及び支柱の移動路の内側、外側に夫々基板を加熱する加熱機構が設けられることを特徴とする請求項2記載の成膜装置。 - 前記第1の歯車及び前記第2の歯車は、回転テーブルの一面側から区画された区画領域に設けられ、
当該区画領域にガスを供給するガス供給部と、当該区画領域を排気する排気路と、が設けられたことを特徴とする請求項1ないし3のいずれか一つに記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014230907A JP6330630B2 (ja) | 2014-11-13 | 2014-11-13 | 成膜装置 |
KR1020150156584A KR101928134B1 (ko) | 2014-11-13 | 2015-11-09 | 성막 장치 |
US14/936,759 US10683573B2 (en) | 2014-11-13 | 2015-11-10 | Film forming apparatus |
TW104137106A TWI609987B (zh) | 2014-11-13 | 2015-11-11 | 成膜裝置 |
CN201510778729.6A CN105603391B (zh) | 2014-11-13 | 2015-11-13 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014230907A JP6330630B2 (ja) | 2014-11-13 | 2014-11-13 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016096220A true JP2016096220A (ja) | 2016-05-26 |
JP6330630B2 JP6330630B2 (ja) | 2018-05-30 |
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JP2014230907A Active JP6330630B2 (ja) | 2014-11-13 | 2014-11-13 | 成膜装置 |
Country Status (5)
Country | Link |
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US (1) | US10683573B2 (ja) |
JP (1) | JP6330630B2 (ja) |
KR (1) | KR101928134B1 (ja) |
CN (1) | CN105603391B (ja) |
TW (1) | TWI609987B (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101832253B1 (ko) * | 2016-11-24 | 2018-02-26 | 주식회사 한화 | 기판 처리 장치 |
KR20180024520A (ko) * | 2016-08-30 | 2018-03-08 | 주성엔지니어링(주) | 기판 처리 장치 |
KR20180082958A (ko) | 2017-01-11 | 2018-07-19 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
KR20180100477A (ko) | 2017-03-01 | 2018-09-11 | 도쿄엘렉트론가부시키가이샤 | 자전 검출용 지그, 기판 처리 장치 및 기판 처리 장치의 운전 방법 |
KR20180127195A (ko) | 2017-05-18 | 2018-11-28 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
JP2019110281A (ja) * | 2017-12-20 | 2019-07-04 | 東京エレクトロン株式会社 | 成膜装置 |
JP2021022658A (ja) * | 2019-07-26 | 2021-02-18 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2021510237A (ja) * | 2018-01-10 | 2021-04-15 | ラム リサーチ コーポレーションLam Research Corporation | 追加の回転軸を有する回転インデクサ |
JP2021086950A (ja) * | 2019-11-28 | 2021-06-03 | 東京エレクトロン株式会社 | 自転駆動機構及び自転駆動方法、並びにこれらを用いた基板処理装置及び基板処理方法 |
KR20210092136A (ko) | 2020-01-15 | 2021-07-23 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
KR20210092134A (ko) | 2020-01-15 | 2021-07-23 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 회전 구동 방법 |
KR20210101138A (ko) | 2020-02-07 | 2021-08-18 | 도쿄엘렉트론가부시키가이샤 | 기판 보유 지지 기구 및 기판 처리 장치 |
WO2022231987A1 (en) * | 2021-04-27 | 2022-11-03 | Lam Research Corporation | Rotational indexers with wafer centering capability |
WO2024142563A1 (ja) * | 2022-12-27 | 2024-07-04 | 株式会社Sumco | 半導体ウェーハの処理装置 |
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JP6330623B2 (ja) * | 2014-10-31 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
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Also Published As
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KR101928134B1 (ko) | 2018-12-11 |
KR20160057322A (ko) | 2016-05-23 |
CN105603391B (zh) | 2019-04-09 |
US10683573B2 (en) | 2020-06-16 |
JP6330630B2 (ja) | 2018-05-30 |
US20160138159A1 (en) | 2016-05-19 |
TW201629259A (zh) | 2016-08-16 |
CN105603391A (zh) | 2016-05-25 |
TWI609987B (zh) | 2018-01-01 |
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