JP2019050186A - 自立電極及びその製造方法 - Google Patents
自立電極及びその製造方法 Download PDFInfo
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- JP2019050186A JP2019050186A JP2018142355A JP2018142355A JP2019050186A JP 2019050186 A JP2019050186 A JP 2019050186A JP 2018142355 A JP2018142355 A JP 2018142355A JP 2018142355 A JP2018142355 A JP 2018142355A JP 2019050186 A JP2019050186 A JP 2019050186A
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- 150000002902 organometallic compounds Chemical class 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
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- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
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- FZHCFNGSGGGXEH-UHFFFAOYSA-N ruthenocene Chemical compound [Ru+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 FZHCFNGSGGGXEH-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910021558 transition metal bromide Inorganic materials 0.000 description 1
- 229910021381 transition metal chloride Inorganic materials 0.000 description 1
- 229910021561 transition metal fluoride Inorganic materials 0.000 description 1
- 229910021573 transition metal iodide Inorganic materials 0.000 description 1
- 229910002001 transition metal nitrate Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
本願の特許請求の範囲に係る発明は、共同研究契約の下記の当事者によって、又は当該当事者のために、なされたものである。共同研究契約は本発明がなされた日以前に有効であり、本発明は共同研究契約の範囲内で行われた業務の結果としてなされたものである。共同研究契約の当事者は1)Honda Research Institute USA,Inc.及び2)NanoSynthesis Plus,Ltd.である。
フレキシブル自立電極の製造
図7、図8、図9、図10、及び表1に示す自立電極を本開示の方法により製造した。これらの例は本開示を説明するためのものであり、本開示を限定するものではない。
Claims (43)
- 自立電極の製造方法であって、該製造方法は、
電極活物質をエアロゾル化してエアロゾル状電極活物質粉末を調製する工程と、
キャリアガス中で前記エアロゾル状電極活物質粉末を単層カーボンナノチューブに接触させ、前記単層カーボンナノチューブと前記エアロゾル状電極活物質粉末の混合物を調製する工程と、
表面上に前記混合物を集める工程と、
前記キャリアガスを除去し、前記単層カーボンナノチューブと前記電極活物質の複合材である自立電極材料を形成する工程と、
を有し、
前記自立電極はバインダー及び金属系集電体を含まない、
製造方法。 - 請求項1記載の製造方法において、
前記電極活物質をエアロゾル化する前記工程は、エアロゾル化反応器中で、第1の多孔質フリット及び前記電極活物質の床にエアロゾル化ガスを流通させて、前記エアロゾル状電極活物質粉末を調製する、
製造方法。 - 請求項1記載の製造方法において、該方法はさらに、
カーボンナノチューブ合成反応器から前記単層カーボンナノチューブを供給する工程を含む、
製造方法。 - 請求項1記載の製造方法において、
前記混合物は、収集チャンバ内で多孔質フリット上に集められる、
製造方法。 - 請求項1記載の製造方法において、
前記電極活物質は、グラファイト、硬質炭素、リチウム金属酸化物、及びリン酸鉄リチウムから選択される、
製造方法。 - 請求項1記載の製造方法において、該方法はさらに
カーボンナノチューブ合成反応器中で前記単層カーボンナノチューブを合成する工程を含む、
製造方法。 - 請求項6記載の製造方法において、
前記エアロゾル状電極活物質粉末を前記単層カーボンナノチューブに接触させることは、前記カーボンナノチューブ合成反応器の下流側且つ前記表面の上流側で行われる、
製造方法。 - 自立電極を製造する装置であって、
単層カーボンナノチューブを製造するための単層カーボンナノチューブ合成反応器と、
電極活物質をエアロゾル化してエアロゾル状電極活物質粉末を調製するためのエアロゾル化反応器であって、キャリアガス中で前記エアロゾル状電極活物質粉末を前記単層カーボンナノチューブに接触させて前記単層カーボンナノチューブと前記エアロゾル状電極活物質粉末の混合物が調製されるように、前記単層カーボンナノチューブ合成反応器に連結されているエアロゾル化反応器と、
前記混合物を集め、前記キャリアガスを除去して、前記単層カーボンナノチューブと前記電極活物質の複合材である自立電極材料を形成するための表面を有する収集チャンバと、
を有する、
装置。 - 請求項8記載の装置において、
前記エアロゾル化反応器は、垂直振とう機、1又は複数のガス入口、1又は複数の出口、及び第1の多孔質フリットを有する、
装置。 - 請求項9記載の装置において、
前記エアロゾル化反応器は、前記カーボンナノチューブ合成反応器の下流側、且つ前記収集チャンバの上流側に配置されている、
装置。 - 請求項9記載の装置において、
前記エアロゾル化反応器は、前記カーボンナノチューブ合成反応器の上流側、且つ前記収集チャンバの上流側に配置されている、
装置。 - 電極活物質と単層カーボンナノチューブの複合材を含み、
バインダー材料も金属系集電体材料も含まない、
自立電極。 - 請求項12記載の自立電極において、
前記複合材はウェブ状構造を有する、
自立電極。 - 請求項12記載の自立電極において、
前記複合材は、0.2〜1重量%の前記単層カーボンナノチューブを含む、
自立電極。 - 請求項12記載の自立電極において、
前記複合材は、約50〜200ミクロンの厚さを有する、
自立電極。 - 請求項12記載の自立電極において、
前記電極活物質は、グラファイト、硬質炭素、リチウム金属酸化物、及びリン酸鉄リチウムから選択される、
自立電極。 - 自立電極の製造方法であって、
ナノチューブと電極活物質粉末との混合物のエアロゾルを調製する工程と、
少なくとも第1の多孔質基板を用意する工程と、
前記混合物のエアロゾルを前記第1の多孔質基板に向かって移動させる工程と、
前記第1の多孔質基板上に前記混合物を集めて、自立電極を形成する工程と、
を含み、
前記自立電極はバインダー及び金属系集電体を含まない、
製造方法。 - 請求項17記載の製造方法において、
前記混合物のエアロゾルは、少なくとも1種のキャリアガスを含み、
前記多孔質基板上に前記混合物を集める際に、前記キャリアガスは前記多孔質基板を通過する、
製造方法。 - 請求項18記載の製造方法において、
前記自立電極の厚さが最大750μmとなるまで、前記多孔質基板上に前記混合物を集める、
製造方法。 - 請求項19記載の製造方法において、
前記自立電極の厚さが100〜450μmとなるまで、前記多孔質基板上に前記混合物を集める、
製造方法。 - 請求項19記載の製造方法において、
前記自立電極の密度は0.75〜2.0g/ccである、
製造方法。 - 請求項21記載の製造方法において、
前記自立電極の密度は0.95〜1.60g/ccである、
製造方法。 - 請求項17記載の製造方法において、該方法はさらに、
前記自立電極の密度を増加させる処理を行う工程を含み、
前記処理を施した前記自立電極の密度は、未処理の自立電極の密度よりも、40%〜125%だけ大きい、
製造方法。 - 請求項23記載の製造方法において、
前記処理を施した前記自立電極の密度は、前記未処理の自立電極の密度よりも、45%〜90%だけ大きい、
製造方法。 - 請求項23記載の製造方法において、
前記処理を施した前記自立電極の厚さは、前記未処理の自立電極の厚さの40%〜75%である、
製造方法。 - 請求項17記載の製造方法において、
カーボンナノチューブと電極活物質粉末との混合物のエアロゾルを調製する前記工程は、前記カーボンナノチューブと少なくとも1種のキャリアガスを含む第1のエアロゾル流を供給する工程と、
前記電極活物質粉末と少なくとも1種のキャリアガスを含む第2のエアロゾル流を供給する工程と、
前記第1のエアロゾル流と前記第2のエアロゾル流とを混合して前記混合物のエアロゾルを調製する工程を含む、
製造方法。 - 請求項26記載の製造方法において、
前記第1のエアロゾル流は、ナノチューブ合成反応器から出た生成物流を含む、
製造方法。 - 請求項27記載の製造方法において、該方法はさらに、
前記ナノチューブ合成反応器中に炭素源を供給する工程と、
キャリアガスの存在下でカーボンナノチューブを成長させる工程と、
前記カーボンナノチューブと前記キャリアガスを含む前記生成物流を前記第1のエアロゾル流として前記ナノチューブ合成反応器の外部に移動させる工程と、
を含む、
製造方法。 - 請求項17記載の製造方法において、該方法はさらに、
第2の多孔質基板を設ける工程と、
前記第1の多孔質基板上に前記混合物を集める工程と、
前記第1の多孔質基板上に所望の厚さの前記自立電極が形成された後、前記混合物の移動方向を前記第2の多孔質基板へ向かうように変える工程と、
所望の厚さを有する第2の自立電極が形成されるまで、前記第2の多孔質基板上に前記混合物を集める工程と、
を含む、
製造方法。 - 請求項29記載の製造方法において、
前記混合物の移動方向を変える前記工程は、
前記第1の多孔質基板の表面通過前後の圧力の低下を測定する工程と、
前記第1の多孔質基板の表面上の前記自立電極の所望の厚さに対応する圧力低下が測定された後、前記混合物が向かう方向を前記第2の多孔質基板の表面に移す工程と、
を含む、
製造方法。 - 請求項17記載の製造方法において、
前記ナノチューブは、カーボンナノチューブである、
製造方法。 - 請求項31記載の製造方法において、
前記自立電極は、0.1〜4重量%の前記カーボンナノチューブを含み、その残部は、前記電極活物質粉末と、任意に1又は複数の添加剤を含む、
製造方法。 - 請求項32記載の製造方法において、
前記自立電極は、0.2〜3重量%の前記カーボンナノチューブを含み、その残部は、前記電極活物質粉末と、任意に1又は複数の添加剤を含む、
製造方法。 - 請求項33記載の製造方法において、
前記自立電極は、0.75〜2重量%の前記カーボンナノチューブを含み、その残部は、前記電極活物質粉末と、任意に1又は複数の添加剤を含む、
製造方法。 - 請求項31記載の製造方法において、
前記自立電極は、前記カーボンナノチューブと、前記電極活物質粉末と、0〜5重量%の添加剤と、を含む、
製造方法。 - 請求項31記載の製造方法において、
前記自立電極は、実質的に前記カーボンナノチューブと前記電極活物質粉末のみから構成される、
製造方法。 - 請求項31記載の製造方法において、
前記自立電極は、前記カーボンナノチューブと前記電極活物質粉末のみから構成される、
製造方法。 - 請求項31記載の製造方法において、
前記ナノチューブは、単層カーボンナノチューブを含む、
製造方法。 - 請求項38記載の製造方法において、
前記電極活物質粉末は、グラファイトを含む、
製造方法。 - 請求項38記載の製造方法において、
前記電極活物質粉末は、金属酸化物を含む、
製造方法。 - 請求項40記載の製造方法において、
前記電極活物質粉末は、LiNiMnCoO2を含む、
製造方法。 - 請求項38記載の製造方法において、
前記自立電極は、前記カーボンナノチューブのウェブ状の配置構成を有し、該配置構成において、前記電極活物質は前記カーボンナノチューブのウェブに埋め込まれている、
製造方法。 - 請求項42記載の製造方法において、
前記自立電極は、フレキシブルである、
製造方法。
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