JP2019029488A - 積層型素子の製造方法 - Google Patents
積層型素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 179
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 238000005520 cutting process Methods 0.000 claims abstract description 74
- 230000001678 irradiating effect Effects 0.000 claims abstract description 20
- 238000010030 laminating Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005304 joining Methods 0.000 abstract description 11
- 238000003475 lamination Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 168
- 239000010410 layer Substances 0.000 description 56
- 230000008569 process Effects 0.000 description 40
- 238000012545 processing Methods 0.000 description 17
- 238000005247 gettering Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- -1 LiTaO 3 Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Description
[第1実施形態]
レーザ光Lの波長:1500nm。
パルス幅:500nsec。
パルス周波数:40kH。
集光用レンズ105下の出力値:1.48w。
パルスエネルギー:37.0μJ。
パルスピッチ:15μm。
半導体基板21の厚さ:779μm。
第1改質領域71の表面21sからの距離(下端距離BL):262μm。
第2改質領域72の表面21sからの距離:370μm。
第1改質領域71の形成時の集光用レンズ105の移動距離Dz1:142μm。
第2改質領域72の形成時の集光用レンズ105の移動距離Dz2:112μm。
[第2例]
レーザ光Lの波長:1342nm。
パルス幅:350nsec。
パルス周波数:60kH。
集光用レンズ105下の出力値:2.60w。
パルスエネルギー:43.3μJ。
パルスピッチ:8.30μm。
半導体基板21の厚さ:625μm。
第1改質領域71の表面21sからの距離(下端距離BL):218μm。
第2改質領域72の表面21sからの距離:346μm。
第1改質領域71の形成時の集光用レンズ105の移動距離Dz1:92μm。
第2改質領域72の形成時の集光用レンズ105の移動距離Dz2:60μm。
[第2実施形態]
Claims (8)
- 表面及び裏面を有する半導体基板と、前記表面に沿って2次元状に配列された複数の機能素子を含む回路層と、を備える半導体ウェハの積層体を構成する積層工程と、
前記積層工程の後に、前記積層体にレーザ光を照射することにより、前記積層体に改質領域及び亀裂を形成するレーザ光照射工程と、
を備え、
前記積層工程は、
前記半導体ウェハとして、第1ウェハ及び第2ウェハを用意すると共に、前記第1ウェハの前記機能素子のそれぞれと前記第2ウェハの前記機能素子のそれぞれとが互いに対応するように、前記第1ウェハの前記回路層に前記第2ウェハの前記回路層を接合する第1接合工程と、
前記第1接合工程の後に、前記第2ウェハの前記半導体基板を研削する研削工程と、
前記研削工程の後に、前記半導体ウェハとして第3ウェハを用意すると共に、前記第2ウェハの前記機能素子のそれぞれと前記第3ウェハの前記機能素子のそれぞれとが互いに対応するように、前記第2ウェハの前記半導体基板に前記第3ウェハの前記回路層を接合する第2接合工程と、
を有し、
前記レーザ光照射工程においては、前記第1ウェハの前記半導体基板に対して、前記機能素子の間を通るように設定された切断予定ラインに沿って前記レーザ光を照射することにより、前記切断予定ラインに沿って前記改質領域を形成すると共に、前記積層体の積層方向に沿って前記改質領域から前記亀裂を伸展させる、
積層型素子の製造方法。 - 表面及び裏面を有する半導体基板と、前記表面に沿って2次元状に配列された複数の機能素子を含む回路層と、を備える半導体ウェハの積層体を構成する積層工程と、
前記積層工程の後に、前記積層体にレーザ光を照射することにより、前記積層体に改質領域及び亀裂を形成するレーザ光照射工程と、
を備え、
前記積層工程は、
前記半導体ウェハとして、第1ウェハ及び第2ウェハを用意すると共に、前記第1ウェハの前記機能素子のそれぞれと前記第2ウェハの前記機能素子のそれぞれとが互いに対応するように、前記第1ウェハの前記半導体基板に前記第2ウェハの前記回路層を接合する第1接合工程と、
前記第1接合工程の後に、前記第2ウェハの前記半導体基板を研削する研削工程と、
前記研削工程の後に、前記半導体ウェハとして第3ウェハを用意すると共に、前記第2ウェハの前記機能素子のそれぞれと前記第3ウェハの前記機能素子のそれぞれとが互いに対応するように、前記第2ウェハの前記半導体基板に前記第3ウェハの前記回路層を接合する第2接合工程と、
を有し、
前記レーザ光照射工程においては、前記第3ウェハの前記半導体基板に対して、前記機能素子の間を通るように設定された切断予定ラインに沿って前記レーザ光を照射することにより、前記切断予定ラインに沿って前記改質領域を形成すると共に、前記積層体の積層方向に沿って前記改質領域から前記亀裂を伸展させる、
積層型素子の製造方法。 - 前記積層工程は、前記第1接合工程の前に、サポート基板及び前記第1ウェハを用意すると共に、前記サポート基板に前記第1ウェハの前記回路層を接合する準備工程を有し、
前記第1接合工程においては、前記第2ウェハ、及び、前記サポート基板に接合された前記第1ウェハを用意する、
請求項2に記載の積層型素子の製造方法。 - 前記積層工程の後であって前記レーザ光照射工程の前、または、前記レーザ光照射工程の後に、前記サポート基板を除去するサポート基板除去工程をさらに備える、
請求項3に記載の積層型素子の製造方法。 - 前記レーザ光照射工程においては、前記積層体における前記積層方向の両端に前記亀裂が至るように前記改質領域を形成する、
請求項1〜4のいずれか一項記載の積層型素子の製造方法。 - 前記レーザ光照射工程は、
前記半導体基板に対して、前記裏面側から前記レーザ光を照射して前記改質領域としての第1改質領域を形成する第1レーザ光照射工程と、
前記半導体基板に対して、前記裏面側から前記レーザ光を照射して前記第1改質領域と前記裏面との間に前記改質領域としての第2改質領域を形成することにより、前記両端に至るように前記亀裂を伸展させる第2レーザ光照射工程と、
を有する、
請求項5に記載の積層型素子の製造方法。 - 前記レーザ光照射工程の後に、前記改質領域が形成された前記半導体基板を研削することにより、前記改質領域を除去する改質領域除去工程をさらに備える、
請求項1〜6のいずれか一項に記載の積層型素子の製造方法。 - 前記レーザ光照射工程の後に、前記積層体に応力を印加することにより、前記切断予定ラインに沿って前記積層体を切断する切断工程をさらに備える、
請求項1〜7のいずれか一項に記載の積層型素子の製造方法。
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