JP2018206947A - テープ拡張装置 - Google Patents

テープ拡張装置 Download PDF

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Publication number
JP2018206947A
JP2018206947A JP2017110739A JP2017110739A JP2018206947A JP 2018206947 A JP2018206947 A JP 2018206947A JP 2017110739 A JP2017110739 A JP 2017110739A JP 2017110739 A JP2017110739 A JP 2017110739A JP 2018206947 A JP2018206947 A JP 2018206947A
Authority
JP
Japan
Prior art keywords
tape
chamber
unit
wafer
die attach
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017110739A
Other languages
English (en)
Japanese (ja)
Inventor
智人 松田
Tomohito Matsuda
智人 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2017110739A priority Critical patent/JP2018206947A/ja
Priority to CN201810507108.8A priority patent/CN108987302A/zh
Priority to KR1020180061138A priority patent/KR20180133211A/ko
Publication of JP2018206947A publication Critical patent/JP2018206947A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F1/00—Preventing the formation of electrostatic charges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2017110739A 2017-06-05 2017-06-05 テープ拡張装置 Pending JP2018206947A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017110739A JP2018206947A (ja) 2017-06-05 2017-06-05 テープ拡張装置
CN201810507108.8A CN108987302A (zh) 2017-06-05 2018-05-24 带扩展装置
KR1020180061138A KR20180133211A (ko) 2017-06-05 2018-05-29 테이프 확장 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017110739A JP2018206947A (ja) 2017-06-05 2017-06-05 テープ拡張装置

Publications (1)

Publication Number Publication Date
JP2018206947A true JP2018206947A (ja) 2018-12-27

Family

ID=64542604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017110739A Pending JP2018206947A (ja) 2017-06-05 2017-06-05 テープ拡張装置

Country Status (3)

Country Link
JP (1) JP2018206947A (zh)
KR (1) KR20180133211A (zh)
CN (1) CN108987302A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134527A (ja) * 2005-11-11 2007-05-31 Matsushita Electric Ind Co Ltd エキスパンド装置および半導体装置製造方法
JP2007305687A (ja) * 2006-05-09 2007-11-22 Disco Abrasive Syst Ltd ウエーハの分割方法および分割装置
JP2009272502A (ja) * 2008-05-09 2009-11-19 Disco Abrasive Syst Ltd フィルム状接着剤の破断装置及び破断方法
JP2010074129A (ja) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd 半導体装置の製造方法、それにより製造される半導体装置、及びダイシングテープ一体型接着シート
JP2012174795A (ja) * 2011-02-18 2012-09-10 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134527A (ja) * 2005-11-11 2007-05-31 Matsushita Electric Ind Co Ltd エキスパンド装置および半導体装置製造方法
JP2007305687A (ja) * 2006-05-09 2007-11-22 Disco Abrasive Syst Ltd ウエーハの分割方法および分割装置
JP2009272502A (ja) * 2008-05-09 2009-11-19 Disco Abrasive Syst Ltd フィルム状接着剤の破断装置及び破断方法
JP2010074129A (ja) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd 半導体装置の製造方法、それにより製造される半導体装置、及びダイシングテープ一体型接着シート
JP2012174795A (ja) * 2011-02-18 2012-09-10 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法

Also Published As

Publication number Publication date
CN108987302A (zh) 2018-12-11
KR20180133211A (ko) 2018-12-13

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