JP2018181893A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2018181893A JP2018181893A JP2017074069A JP2017074069A JP2018181893A JP 2018181893 A JP2018181893 A JP 2018181893A JP 2017074069 A JP2017074069 A JP 2017074069A JP 2017074069 A JP2017074069 A JP 2017074069A JP 2018181893 A JP2018181893 A JP 2018181893A
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- metal ring
- base plate
- heat sink
- semiconductor device
- thermal paste
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Abstract
【解決手段】半導体装置は、半導体チップ1を搭載した積層基板2が接合されたベース板3と、ベース板3に、サーマルペースト16および金属リング12を介して取り付けられたヒートシンク11と、を備える。また、金属リング12の中穴は、半導体チップ1と対向する部分に設けられ、前記中穴の部分13にサーマルペースト16が充填されている。また、金属リング12は、ベース板3と同程度の硬度の材料、または、より硬度が低い材料で形成されている。
【選択図】図1
Description
図1に示すように、パワー半導体モジュールは、パワー半導体チップ1と、積層基板2と、ベース板3と、ケース4と、金属端子5と、金属ワイヤ6と、蓋7と、封止材8と、ヒートシンク11と、金属リング12と、を備える。
2 積層基板
21 絶縁基板
22 導電性板
3 ベース板
31 突起
32 溝
4 ケース
5 金属端子
6 金属ワイヤ
7 蓋
8 封止材
9 凹凸
10 軟質Al金属層
11 ヒートシンク
12 金属リング
121 突起
13 サーマルペースト塗布エリア
16 サーマルペースト
Claims (11)
- 半導体チップを搭載した積層基板が接合されたベース板と、
前記ベース板に、サーマルペーストおよび金属リングを介して取り付けられたヒートシンクと、
を備えることを特徴とする半導体装置。 - 前記金属リングの中穴は、前記半導体チップと対向する部分に設けられ、前記中穴の部分に前記サーマルペーストが充填されていることを特徴とする請求項1に記載の半導体装置。
- 前記金属リングは、前記ヒートシンクと同程度の硬度の材料、または、より硬度が低い材料で形成されていることを特徴とする請求項1または2に記載の半導体装置。
- 前記金属リングは、銅、アルミニウムまたはこれらを一つ以上含む合金で形成されていることを特徴とする請求項1または2に記載の半導体装置。
- 前記ベース板は、マグネシウム合金に炭化珪素が含まれる複合材からなることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記ベース板は、前記金属リングと接触する部分に、途切れのない突起が設けられていることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記ベース板は、前記金属リングと接触する部分に、途切れのない溝が設けられていることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記金属リングは、前記ベース板と接触する部分および前記ヒートシンクと接触する部分のいずれか一つまたは両方に、途切れのない突起が設けられていることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。
- 前記金属リングは、断面が楕円形であることを特徴とする請求項1〜8のいずれか一つに記載の半導体装置。
- 半導体チップを搭載した積層基板をベース板に接合する第1工程と、
前記ベース板またはヒートシンクに、サーマルペーストを塗布する第2工程と、
前記ベース板またはヒートシンクに、前記サーマルペーストの厚さ以下の厚さの金属リングを取り付ける第3工程と、
前記ベース板とヒートシンクの間に、前記サーマルペーストおよび前記金属リングを挟んで前記ヒートシンクを取り付ける第4工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記金属リングは突起を有し、
前記突起の高さは、前記金属リングの突起のない部分の厚さの半分以下であり、
前記突起を含む前記金属リングの厚さは、前記サーマルペーストの厚さの1.5倍以下であることを特徴とする請求項10に記載の半導体装置の製造方法。
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CN201810153635.3A CN108695276A (zh) | 2017-04-03 | 2018-02-22 | 半导体装置及半导体装置的制造方法 |
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JP2022018033A (ja) * | 2020-07-14 | 2022-01-26 | 富士電機株式会社 | 半導体モジュール、電力変換装置及び半導体モジュールの製造方法 |
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