JP2018156946A - 導電パターンの製造方法及び導電パターン形成基板 - Google Patents
導電パターンの製造方法及び導電パターン形成基板 Download PDFInfo
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- JP2018156946A JP2018156946A JP2018089389A JP2018089389A JP2018156946A JP 2018156946 A JP2018156946 A JP 2018156946A JP 2018089389 A JP2018089389 A JP 2018089389A JP 2018089389 A JP2018089389 A JP 2018089389A JP 2018156946 A JP2018156946 A JP 2018156946A
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- metal nanowire
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- H—ELECTRICITY
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Abstract
【解決手段】基板10の少なくとも一方の主面の全部または一部の面に、金属ナノワイヤ層12を形成し、所定のパターンで透光部14aが形成されたマスク14を介してパルス光を照射し、上記所定パターン形状の領域で上記金属ナノワイヤ層12中の金属ナノワイヤを焼結し、上記所定パターン形状の領域に導電性を発現させる。これにより、任意のパターンの導電パターンを備える基板を簡易な工程で製造することができる。
【選択図】図1
Description
(1)金属ナノワイヤを含有する導電性インクを基板に塗布する工程。
(2)焼成を行い、透明導電層を形成する工程。
(3)感光性を有するレジストを上記透明導電層上に形成する工程。
(4)微細パターンに相当する適当な遮光マスクを通じてレジストに光エネルギーを付与する工程。
(5)得られたレジストの潜像を、適当な現像用溶液による溶出によって現像する工程。
(6)適当なエッチング方法を用いて露出した被パターニング膜(透明導電層)を除去する工程。
(7)残存したレジストを適当な方法を用いて除去する工程。
(1)水に分散した銀ナノワイヤを含有する導電性インクを基板に塗布する工程。
(2)焼成を行い、銀ナノワイヤ網層を形成する工程。
(3)プレポリマーを含有する光硬化型のマトリクス材を前記銀ナノワイヤ網層上に形成する工程。
(4)微細パターンに相当する適当な遮光マスクを通じてマトリクス材に光エネルギーを付与する工程。
(5)非硬化領域を溶媒(エタノール)で洗浄することによって除去する工程。または、粘着テープや粘着性ロールを用いて非硬化領域を物理的に除去する工程。
<バインダーを含まないインクの調製方法>
銀ナノワイヤ分散液としてSLV−NW−35(bluenano社製 イソプロパノール分散液、銀ナノワイヤの径35nm、長さ約15μm(カタログ値))を用い、この銀ナノワイヤ分散液にテルピネオール(日本テルペン化学(株)製)を少量加え、良く分散させた後、イソプロパノールを留去し溶媒置換を行った。その後テルソルブ MTPH(日本テルペン化学(株)製、イソボルニルシクロヘキサノール)およびテルピネオールを最終的に分散媒の濃度がテルピネオール/テルソルブ MTPH=1/8(質量比)となるように加え、(株)シンキー社製のARV−310を用いてよく分散させた分散液を得た。なお、最終的に得られる分散液の銀ナノワイヤ濃度が1質量%になるよう、最初に加える少量のテルピネオールの量は予め計算して決定しておいた。
実施例1で製造したインク中に銀ナノワイヤ99.5質量部に対して0.5質量部となるようにポリ−N−ビニルピロリドン(以下PNVP、(株)日本触媒製 K−90、分子量36万)を添加したインクを調製し、スクリーン印刷機MT−320TVZ(マイクロテック(株)製)により、ルミラー(登録商標)U98(東レ(株)製二軸延伸ポリエステルフィルム、厚み125μm)に11cm角の金属ナノワイヤ層12を印刷した。乾燥後の膜厚は0.15μmであった。
<バインダー樹脂を含有するインクの調製及び特性評価>
バインダー樹脂として、ポリ−N−ビニルピロリドン(以下PNVP、(株)日本触媒製 K−90、分子量36万)1gをテルピネオール9gに溶解してPNVPの10質量%テルピネオール溶液を作製したのち、このPNVPのテルピネオール溶液400mgに、実施例1同様溶媒置換して量比を変えて調製した銀ナノワイヤの2質量%テルピネオール分散液250mg、テルピネオール350mg、メチルイソブチルケトン(以下MIBK、東京化成工業(株)製)1gを加え、短時間作業用新型ボルテックスミキサーVORTEX3(IKA社製)で1分間室温25℃にて振動撹拌することにより、インクを調製した。
<バインダー樹脂を含有するインクの調製及び特性評価>
光焼成に用いるマスクの遮光ラインが0.5mm(図6b)のものを用いた以外は、実施例3と同様の方法でバインダー樹脂を含有するインクの調製及び特性評価を実施した。評価結果を表2に示す。
<バインダー樹脂を含有するインクの調製及び特性評価>
バインダー樹脂として、ポリ−N−ビニルアセトアミド(以下PNVA、昭和電工(株)製 GE191−104P、分子量30万)1gを1−メトキシ−2−プロパノール(以下PGME、東京化成工業(株)製)9gに溶解してPNVAの10質量%PGME溶液を作製したのち、このPNVAのPGME溶液400mgに、実施例1同様溶媒置換して分散媒を変えて調製した銀ナノワイヤの1質量%PGME分散液500mg、PGME300mg、MIBK800mgを加え、VORTEX3(IKA社製)で1分間振動撹拌することにより、インクを調製した。
<バインダー樹脂を含有するインクの調製及び特性評価>
光焼成に用いるマスクの遮光ラインが0.5mm(図6b)のものを用いた以外は、実施例5と同様の方法でバインダー樹脂を含有するインクの調製及び特性評価を実施した。評価結果を表2に示す。
<バインダー樹脂を含有するインクの調製及び特性評価>
バインダー樹脂としてポリ(メチルメタクリレート)(以下PMMA、三菱レイヨン(株)製 VH−001)1gをMIBK9gに溶解してPMMAの10質量%MIBK溶液を作製したのち、このPMMAのMIBK溶液800mgに、銀ナノワイヤの2質量%テルピネオール分散液250mg、テルピネオール750mg、MIBK200mgを加え、VORTEX3(IKA社製)で1分間振動撹拌することにより、インクを調製した。
<アンダーコートを使用した実施例>
アンダーコート樹脂として、フェノキシタイプのエポキシ樹脂(jER1256、三菱化学(株)製)の20質量%溶液(溶媒ブチルカルビトールアセテート)を調製し、基板であるルミラー(登録商標)T60(東レ(株)製ポリエステルフィルム、厚み125μm)表面に塗布後、80℃で60分間乾燥して、アンダーコート層(膜厚約2μm)を形成したポリエステルフィルムを用いた以外は、実施例3と同等の方法で評価した。結果を表2に示す。
Claims (12)
- 基板の少なくとも一方の主面の全部または一部に、アスペクト比の平均が100以上2000以下である金属ナノワイヤとバインダー樹脂とを含む面内での金属ナノワイヤ濃度が略均一である金属ナノワイヤ層を形成する工程と、
所定のパターンで前記金属ナノワイヤ層にフラッシュランプを備える光源から光を照射し、前記所定パターン形状の領域で金属ナノワイヤ層中の金属ナノワイヤを焼結し、導電性を付与する工程と、
を備えることを特徴とする、焼結された導電性領域と焼結されていない非導電性領域を有する導電パターンの製造方法。 - 前記金属ナノワイヤ層において、金属ナノワイヤとバインダー樹脂との合計に対するバインダー樹脂の割合が0.5〜94.1質量%である、請求項1に記載の導電パターンの製造方法。
- 前記光が、前記パターン形状で透光部が形成されたマスクを介して照射されるパルス光である請求項1または2に記載の導電パターンの製造方法。
- 前記金属ナノワイヤが銀ナノワイヤである請求項1から3のいずれか一に記載の導電パターンの製造方法。
- 前記基板にアンダーコートすることによりアンダーコート層を形成した後アンダーコート層上に前記金属ナノワイヤ層を形成する請求項1から4のいずれか一項に記載の導電パターンの製造方法。
- 前記金属ナノワイヤ層は、金属ナノワイヤ、バインダー樹脂および分散媒を含む金属ナノワイヤインクを基板の少なくとも一方の主面の全部または一部の面に塗布して形成する請求項1から5のいずれか一項に記載の導電パターンの製造方法。
- 前記金属ナノワイヤインク中の金属ナノワイヤの含有率が0.01〜3質量%である、請求項6に記載の導電パターンの製造方法。
- 前記金属ナノワイヤインク中の金属ナノワイヤの含有率が0.01〜1質量%である、請求項7に記載の導電パターンの製造方法。
- 基板の少なくとも一方の主面の全部または一部にアスペクト比の平均が100以上2000以下である金属ナノワイヤとバインダー樹脂とを含む面内での金属ナノワイヤ濃度が略均一である金属ナノワイヤ層を有し、
前記金属ナノワイヤ層が、前記金属ナノワイヤが所定のパターンで焼結された導電性領域と、
前記金属ナノワイヤ層の前記導電性領域以外の領域であって、前記金属ナノワイヤが焼結されていない非導電性領域と、
を備える導電パターン形成基板。 - 前記導電性領域の表面抵抗が200Ω/□以下であり、前記非導電性領域の表面抵抗が103Ω/□以上である、請求項9に記載の導電パターン形成基板。
- 前記金属ナノワイヤが、径の平均が1nm以上500nm以下であり、長軸の長さの平均が1μm以上100μm以下であり、アスペクト比の平均が100以上である、請求項9または10に記載の導電パターン形成基板。
- 前記金属ナノワイヤ層において、金属ナノワイヤとバインダー樹脂との合計に対するバインダー樹脂の割合が0.5〜94.1質量%である、請求項9から11のいずれか一項に記載の導電パターン形成基板。
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CN105164764A (zh) | 2015-12-16 |
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EP2991083A4 (en) | 2016-11-30 |
JP6366577B2 (ja) | 2018-08-01 |
WO2014175163A1 (ja) | 2014-10-30 |
KR102099090B1 (ko) | 2020-04-09 |
KR20150132870A (ko) | 2015-11-26 |
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