JP2017525998A - 吸収体を有する、平坦化された極紫外線リソグラフィブランク及びその製造システム - Google Patents
吸収体を有する、平坦化された極紫外線リソグラフィブランク及びその製造システム Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 極紫外線(EUV)マスクブランク作製システムであって、
真空を生成するための、基板ハンドリング真空チャンバと、
真空内の、前記基板ハンドリング真空チャンバにロードされる超低膨張基板を搬送するための、基板ハンドリングプラットフォームと、
EUVマスクブランクを形成するための、前記基板ハンドリングプラットフォームによってアクセスされる複数のサブチャンバであって、
極紫外線(EUV)光を反射させるために、前記超低膨張基板の上に多層スタックを形成するための第1のサブチャンバと、
波長13.5nmにおける前記EUV光を吸収することにより反射率が1.9%未満となるように、前記多層スタックの上に形成される二層吸収体を形成するための第2のサブチャンバと
を含む複数のサブチャンバと
を備えるシステム。 - 前記二層吸収体が、第1の吸収層と、前記第1の吸収層に形成された第2の吸収層とを含み、前記二層吸収体が30nmの厚さを有する、請求項1に記載のシステム。
- 前記EUVマスクブランクが更に、前記多層スタックを保護するために、前記多層スタックに形成されたキャッピング層と、前記キャッピング層に形成された二層吸収体を含む、請求項1に記載のシステム。
- 前記EUVマスクブランクが13.5nmの波長における前記EUV光を吸収することが、30nmの結合厚さに堆積される前記二層吸収体の第1の吸収層と第2の吸収層をある厚さに堆積させることによって、反射率の割合を最小限に抑えることを含む、請求項1に記載のシステム。
- 前記超低膨張基板をロードするための、前記基板ハンドリング真空チャンバの初期基板ハンドリングシステムと、
前記初期基板ハンドリングシステム周囲の第1の真空チャンバのガス抜きサブシステムと
を更に備える、請求項1に記載のシステム。 - 前記二層吸収体が、前記第2のサブチャンバによって堆積された錫(Sn)、プラチナ(Pt)、銀(Ag)、インジウム(In)、又はニッケル(Ni)の第1の吸収層を含む、請求項1に記載のシステム。
- 前記二層吸収体が、前記第2のサブチャンバによって、第1の吸収層に堆積された、ニッケル(Ni)、亜鉛(Zn)、アンチモン(Sb)、クロム(Cr)、銅(Cu)、タンタル(Ta)、又はテルル(Te)の第2の吸収層を含む、請求項1に記載のシステム。
- 前記二層吸収体が、30nmの結合厚さに堆積された銀(Ag)の第1の吸収層と、ニッケル(Ni)の第2の吸収層とを含む、請求項1に記載のシステム。
- 極紫外線(EUV)マスクブランクシステムであって、
表面不完全性を含む超低膨張基板と、
前記表面不完全性を封包する前記超低膨張基板の平坦化層と、
前記平坦化層の上の多層スタックと、
前記多層スタックの上の二層吸収体であって、30nmの結合厚さに堆積された前記二層吸収体の第1の吸収層と第2の吸収層の厚さを制御することによって反射率の割合を決定し、これにより反射率が1.9%未満となることを含む二層吸収体とを備える、システム。 - 前記多層スタックを保護するために、前記多層スタックに形成されたキャッピング層と、前記キャッピング層に形成された前記二層吸収体とを更に備える、請求項9に記載のシステム。
- 前記第1の吸収層の厚さが、26.5nm〜28nmの範囲を含む、請求項9に記載のシステム。
- 前記平坦化層のすぐ上に形成された追加の多層スタックを更に備え、前記追加の多層スタックが、最大60の垂直のスタックに形成された前記多層スタックを含む、請求項11に記載のシステム。
- 前記二層吸収体が、錫(Sn)、プラチナ(Pt)、銀(Ag)、インジウム(In)、又はニッケル(Ni)の前記第1の吸収層を含む、請求項11に記載のシステム。
- 前記二層吸収体が、ニッケル(Ni)、亜鉛(Zn)、アンチモン(Sb)、クロム(Cr)、銅(Cu)、タンタル(Ta)、又はテルル(Te)の前記第2の吸収層を含む、請求項11に記載のシステム。
- 前記二層吸収体が、30nmの結合厚さに堆積された銀(Ag)の前記第1の吸収層と、ニッケル(Ni)の前記第2の吸収層を含む、請求項11に記載のシステム。
Applications Claiming Priority (5)
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US201462023507P | 2014-07-11 | 2014-07-11 | |
US62/023,507 | 2014-07-11 | ||
US14/620,123 | 2015-02-11 | ||
US14/620,123 US9581889B2 (en) | 2014-07-11 | 2015-02-11 | Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor |
PCT/US2015/039533 WO2016007613A1 (en) | 2014-07-11 | 2015-07-08 | Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor |
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JP2019217688A Active JP6855556B2 (ja) | 2014-07-11 | 2019-12-02 | 吸収体を有する、平坦化された極紫外線リソグラフィブランク及びその製造システム |
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US (2) | US9581889B2 (ja) |
EP (1) | EP3167475B1 (ja) |
JP (2) | JP6626878B2 (ja) |
KR (3) | KR102252228B1 (ja) |
CN (1) | CN106663602B (ja) |
MY (1) | MY180479A (ja) |
SG (1) | SG11201610501PA (ja) |
TW (2) | TWI599672B (ja) |
WO (1) | WO2016007613A1 (ja) |
Cited By (3)
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JP2019219651A (ja) * | 2018-06-13 | 2019-12-26 | Agc株式会社 | 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法 |
WO2022172916A1 (ja) * | 2021-02-15 | 2022-08-18 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
JP2023511124A (ja) * | 2020-01-27 | 2023-03-16 | アプライド マテリアルズ インコーポレイテッド | 極紫外線マスクブランクハードマスク材料 |
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CN106663602B (zh) | 2019-11-26 |
TWI658165B (zh) | 2019-05-01 |
KR20210055805A (ko) | 2021-05-17 |
JP2020064307A (ja) | 2020-04-23 |
KR20180019775A (ko) | 2018-02-26 |
EP3167475B1 (en) | 2021-03-17 |
TW201742944A (zh) | 2017-12-16 |
US10012897B2 (en) | 2018-07-03 |
MY180479A (en) | 2020-11-30 |
SG11201610501PA (en) | 2017-01-27 |
EP3167475A4 (en) | 2018-04-18 |
KR101831347B1 (ko) | 2018-02-22 |
KR102291647B1 (ko) | 2021-08-18 |
TWI599672B (zh) | 2017-09-21 |
KR102252228B1 (ko) | 2021-05-13 |
CN106663602A (zh) | 2017-05-10 |
TW201614093A (en) | 2016-04-16 |
EP3167475A1 (en) | 2017-05-17 |
US9581889B2 (en) | 2017-02-28 |
JP6855556B2 (ja) | 2021-04-07 |
US20160011500A1 (en) | 2016-01-14 |
WO2016007613A1 (en) | 2016-01-14 |
KR20170032379A (ko) | 2017-03-22 |
US20170131627A1 (en) | 2017-05-11 |
JP6626878B2 (ja) | 2019-12-25 |
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