JP2017208555A - 複数の蛍光体を備えるポンプledシステムおよび方法 - Google Patents
複数の蛍光体を備えるポンプledシステムおよび方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 229910052712 strontium Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052727 yttrium Inorganic materials 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 5
- 238000002835 absorbance Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910017414 LaAl Inorganic materials 0.000 claims description 3
- 229910006360 Si—O—N Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000009877 rendering Methods 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 abstract description 11
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000003086 colorant Substances 0.000 abstract description 6
- 229910052791 calcium Inorganic materials 0.000 description 17
- 229910052788 barium Inorganic materials 0.000 description 13
- 229910052688 Gadolinium Inorganic materials 0.000 description 9
- 238000013459 approach Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 230000009102 absorption Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000001072 colon Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Abstract
Description
1.ポンプ波長と蛍光体波長との間のストークス損失が大きくなるため、蛍光体の下方変換プロセスにおいてエネルギー損失も大きくなる。ポンプLEDのバンドギャップが比較的大きくなって400nmとなった場合、動作電圧も高くなる。400nmポンプLEDの活性領域へのキャリアの閉じ込めの低下に起因して、キャリアが逃げやすくなり、その結果高温での性能が低下する。ほとんどの材料で、445nmよりも400nmにおける吸収の方が大幅に高い(シリコン、いくつかの基材(例えば、GaNまたはSiC)、およびAuボンドワイヤによって構成されるLEDにおいて一般的に用いられる高反射率金属(例えば、AlおよびAg)がこれに該当する)。その結果、光抽出効率が低下する。
2.380〜430nmの励起光と共に用いられる蛍光体については、顕著な進展はみられていない。そのため、利用可能な蛍光体材料の性能レベルは、LED製造業者によって材料(例えば、Y3Al5O12:Ce3+(YAG−黄色)およびCaAlSiN:Eu2+(赤色))として用いられている、450nmポンプLEDの最新の蛍光体の性能よりも劣っている。これらの材料は、時間と労力をかけて改良された。
3.最新蛍光体材料のこのような性能のオフセットに起因して、利用可能な蛍光体のうち、一部のみしか高性能LED素子に用いることができない。主要な例として、チップが発光する全波長の使用に適していない青色蛍光体がある。2つの青色発光蛍光体の吸光特性を図2に示す。縦線は、これら2つの蛍光体吸光曲線において405nmおよび420nmのエミッタの位置を示す。これら2つの材料の吸光度は405nmにおいて類似しているものの、420nmにおいては明らかに異なっている。このように、第1の蛍光体の吸光度の低下に起因して、より長波長のエミッタに関して素子の性能に大きな影響が出る。この性能変化を図3に示す。
(Srn,Ca1−n)10(PO4)6*B2O3:Eu2+(ここで0≦n≦1)
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+
(Ba,Sr,Ca)BPO5:Eu2+,Mn2+
Sr2Si3O8*2SrCl2:Eu2+
(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+
BaAl8O13:Eu2+
2SrO*0.84P2O5*0.16B2O3:Eu2+
(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+
K2SiF6:Mn4+
(Ba,Sr,Ca)Al2O4:Eu2+
(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+
(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+
(Mg,Ca,Sr,Ba,Zn)2Si1−xO4−2x:Eu2+(ここで0≦x≦0.2)
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+
Na2Gd2B2O7:Ce3+,Tb3+
(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+
(Gd,Y,Lu,La)2O3:Eu3+,Bi3+
(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+
(Gd,Y,Lu,La)VO4:Eu3+,Bi3+
(Ca,Sr)S:Eu2+,Ce3+
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Sc,Al,Ga)5−nO12−3/2n:Ce3+(ここで0≦n≦0.5)
ZnS:Cu+,Cl−
(Y,Lu,Th)3Al5O12:Ce3+
ZnS:Cu+,Al3+
ZnS:Ag+,Al3+
ZnS:Ag+,Cl−
(Ca,Sr)Ga2S4:Eu2+
SrY2S4:Eu2+
CaLa2S4:Ce3+
(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+
(Y,Lu)2WO6:Eu3+,Mo6+
CaWO4
(Y,Gd,La)2O2S:Eu3+
(Y,Gd,La)2O3:Eu3+
(Ba,Sr,Ca)nSinNn:Eu2+(ここで2n+4=3n)
Ca3(SiO4)Cl2:Eu2+
(Y,Lu,Gd)2−nCanSi4N6+nC1−n:Ce3+(ここで0≦n≦0.5)
(Lu,Ca,Li,Mg,Y)alpha−SiAlON(Eu2+および/またはCe3+でドープ)
(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+
(Sr,Ca)AlSiN3:Eu2+
CaAlSi(ON)3:Eu2+
Sr10(PO4)6Cl2:Eu2+
(BaSi)O12N2:Eu2+
SrSi2(O,Cl)2N2:Eu2+
(Ba,Sr)Si2(O,Cl)2N2:Eu2+
LiM2O8:Eu3+(M=(WまたはMo))
Claims (21)
- 光学素子であって、
基材と、
前記基材の一部分上に設けられた少なくとも1つの発光ダイオード(LED)と、ここで、当該LEDは、
表面領域を有するガリウムおよび窒素含有基板と、
前記表面領域上に形成されたガリウムおよび窒素含有バッファー層と、
活性領域を含む接合領域と、ここで、当該活性領域は、約405〜約430nmの波長の電磁波を放射するように構成される、
前記接合領域に接続された第1の電気接点領域および第2の電気接点領域と、ここで、当該第1の電気接点領域および第2の電気接点領域は、前記活性領域からの電磁波の放射を可能にする電流を供給する、
を有し、
蛍光体材料の混合物と、ここで、当該混合物は、第1の蛍光体材料、第2の蛍光体材料および第3の蛍光体材料をバインダー材料に含んでなり、当該混合物は、前記LEDの近傍に配置され、前記電磁波と相互作用して、前記約405〜約430nmの波長の電磁波を約440〜約650nmの波長の電磁波に実質的に変換するように構成される、
を備える、素子。 - 前記ガリウムおよび窒素含有基板は、非極性または半極性配向によって特徴付けられる、請求項1に記載の素子。
- 前記ガリウムおよび窒素含有基板は、バルクGaN基板である、請求項1に記載の素子。
- 前記LEDは、少なくとも100A/cm2の電流密度で駆動される、請求項1に記載の素子。
- 前記LEDのワット当たりのルーメン効率は、少なくとも50である、請求項1に記載の素子。
- 複数のLEDがアレイ状に配置される、請求項1に記載の素子。
- 前記アレイは、異なる発光波長のLEDを有する、請求項6に記載の素子。
- 前記第1の蛍光体材料は、青色蛍光体を含む、請求項1に記載の素子。
- 前記第1の蛍光体材料は、内部量子効率が少なくとも70%である青色蛍光体を含む、請求項1に記載の素子。
- 前記第1の蛍光体材料は、吸光率が1〜40cm−1である青色蛍光体を含む、請求項1に記載の素子。
- 前記第1の蛍光体材料は、ピーク発光波長が440nm〜480nmであり、かつスペクトルFWHMが少なくとも10nmである青色蛍光体を含む、請求項1に記載の素子。
- 前記第1の蛍光体材料は青色蛍光体を含み、当該青色蛍光体の内部量子効率は少なくとも70%であり、吸光率は1〜40cm−1であり、ピーク発光波長は440nm〜480nmであり、スペクトルFWHMは10nmを超える、請求項1に記載の素子。
- 前記第1の蛍光体材料は、下記からなる群より選択される青色蛍光体を含む:
BaMgAl10O17:Eu2+、Sr2P2O7:Eu2+、Sr6P5BO20:Eu2+、(SrCa)2B5O9Cl:Eu2+、SR5CL(PO4)3:Eu2+、Ca2P2O7:Eu2+、ZnS:Ag,Cl、Sr10(PO4)6Cl2:E、LaAl(Si6−zAlz)N10−zOz:Ce3+、a−Sialon:Ce3+、(Y,La)−Si−O−N:Ce3+、および、Gd1−xSr2+ xAlO5−xFx:Ce3+[x=0..6]
請求項1に記載の素子。 - 前記蛍光体材料の混合物は、プランク曲線(du'v'<.01)上またはその近傍において放射するように調製され、平均演色は少なくとも75である、請求項1に記載の素子。
- 前記活性領域は、少なくとも100A/cm2の電流密度で注入されるように構成され、少なくとも100℃の接合温度において約70%以上の内部量子効率を維持するように構成される、請求項1に記載の素子。
- 前記活性領域は、少なくとも100A/cm2の電流密度でかつ少なくとも85℃の温度において、約405〜430nmの電磁波を少なくとも70%の内部量子効率で放射するように構成され、前記活性領域からの電磁波の放射は、405nm未満の波長および440nmを超える波長の電磁波を実質的に含まない、請求項1に記載の素子。
- 前記蛍光体の組成は、前記素子の水平方向または垂直方向に沿って異なる、請求項1に記載の素子。
- 光学素子であって、
基材の一部分上に設けられた少なくとも1つの発光ダイオード(LED)と、ここで当該LEDは、
表面領域を有するガリウムおよび窒素含有基板と、
前記表面領域上に形成されたガリウムおよび窒素含有バッファー層と、
活性領域を含む接合領域と、ここで、当該活性領域は、約405〜約430nmの電磁波を放射する、
前記接合領域に接続された第1の電気接点領域および第2の電気接点領域と、ここで、当該第1の電気接点領域および第2の電気接点領域は、前記活性領域が電磁波を発生させるための電流を供給する、
を有し、
前記LEDの近傍に配置された色変換材料と、
を備え、
前記活性領域は、少なくとも圧電場が減少している間は、前記約405〜430nmの電磁波を放射するように構成され、これにより、前記活性領域からの出力が少なくとも100Amps/cm2となり、かつ、内部量子効率が少なくとも約70%に維持され、温度が約85℃〜約150℃に維持される、
さらに、前記電磁波は、405nm未満の波長、および440nmを超える波長を実質的に含まない、
素子。 - 前記ガリウムおよび窒素含有基板はバルクGaNであり、当該バルクGaNは、半極性配向、非極性配向および極性配向からなる群より選択される、請求項18に記載の素子。
- 前記ガリウムおよび窒素含有基板は、転位密度が1E7cm−2未満である点で特徴付けられる、請求項18に記載の素子。
- 第1の色変換材料および第2の色変換材料を含み、当該第1の色変換材料および第2の色変換材料は、それぞれ異なる波長に関連する、請求項18に記載の素子。
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DE112011102386T5 (de) | 2013-04-25 |
KR20130064787A (ko) | 2013-06-18 |
KR20190044144A (ko) | 2019-04-29 |
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CN103069582B (zh) | 2017-07-28 |
US10700244B2 (en) | 2020-06-30 |
JP2013536583A (ja) | 2013-09-19 |
US9293667B2 (en) | 2016-03-22 |
KR20180051666A (ko) | 2018-05-16 |
US20160276550A1 (en) | 2016-09-22 |
JP2015213174A (ja) | 2015-11-26 |
US11611023B2 (en) | 2023-03-21 |
US20170222100A1 (en) | 2017-08-03 |
CN107256861A (zh) | 2017-10-17 |
CN103069582A (zh) | 2013-04-24 |
KR20210099214A (ko) | 2021-08-11 |
CN107256861B (zh) | 2023-05-05 |
WO2012024636A3 (en) | 2012-05-10 |
US20120043552A1 (en) | 2012-02-23 |
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