JP2017208510A - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
- Publication number
- JP2017208510A JP2017208510A JP2016101744A JP2016101744A JP2017208510A JP 2017208510 A JP2017208510 A JP 2017208510A JP 2016101744 A JP2016101744 A JP 2016101744A JP 2016101744 A JP2016101744 A JP 2016101744A JP 2017208510 A JP2017208510 A JP 2017208510A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- silicon
- region
- auxiliary layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 224
- 239000010410 layer Substances 0.000 claims description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 229910052736 halogen Inorganic materials 0.000 claims description 19
- 150000002367 halogens Chemical class 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 13
- 229910001882 dioxygen Inorganic materials 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Magnetic Heads (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】 互いに異なる組成を有する複数のシリコン含有領域(第1領域R1,第2領域R2,…、第n領域Rn)を含む被処理体を、処理容器内に収容し、複数のシリコン含有領域R1,R2,R3のいずれか一つ以上を選択的にエッチングする方法であって、処理容器内において生成された処理ガスのプラズマにより、複数のシリコン含有領域R1,R2,R3のいずれか一つ以上の表面にエッチング補助層MLを形成する第1工程と、エッチング補助層MLにエネルギーを与える第2工程とを備え、エネルギーは、エッチング補助層MLが除去されるエネルギー以上であって、エッチング補助層MLの直下に位置する領域がスパッタリングされるエネルギーよりも小さく、第1工程及び第2工程を含むシーケンスが繰り返して実行される。
【選択図】図1
Description
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス
・CHF3ガス流量:1sccm〜50sccm
・Arガス流量:200sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス
・Arガス流量:100〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス。
・CHF3ガス流量:1sccm〜50sccm
・Arガス流量:200sccm〜1500sccm
・酸素ガス流量:0〜20sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス。
・Arガス流量:200sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜200mTorr(1.33Pa〜26.67Pa)
処理ガス。
・NF3ガス流量:1sccm〜200sccm
・Arガス流量:0sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス
・Arガス流量:200sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜200mTorr(1.33Pa〜26.67Pa)
処理ガス
・酸素ガス流量:1sccm〜200sccm
・Arガス流量:0sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
実施例4では、次いで、第1工程ST11が実行される。第1工程ST11では、ウエハWが収容された処理容器12内で、ハロゲン含有ガスを含む処理ガスのプラズマと、不活性ガスを含む処理ガスとのプラズマが生成される。ハロゲン含有ガスとして、NF3ガスが利用され、不活性ガスとしては、Arガスが利用される。第1工程ST11では、第1の高周波電源62からの高周波電力が下部電極LEに対して供給される。かかる第1工程ST11における上述したプラズマ処理装置10の各部の動作は制御部Cntによって制御され得る。
以下に、第1工程ST11における各種条件を例示する。
処理容器内圧力:10mTorr〜200mTorr(1.33Pa〜26.67Pa)
処理ガス。
・NF3ガス流量:1sccm〜200sccm
・Arガス流量:0sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
処理容器内圧力:10mTorr〜50mTorr(1.33Pa〜6.67Pa)
処理ガス。
・Arガス流量:200sccm〜1500sccm
・第1の高周波電源62の高周波電力:60MHz、50W〜500W
・第2の高周波電源64の高周波バイアス電力:40MHz、0W〜50W
このように、表層のエッチング補助層を用いたエッチングの場合、表面の状態によってエッチングをON/OFFすることが可能である。
Claims (6)
- 互いに異なる組成を有する複数のシリコン含有領域を含む被処理体を、処理容器内に収容し、前記複数のシリコン含有領域のいずれか一つ以上を選択的にエッチングする方法であって、
前記処理容器内において生成された処理ガスのプラズマにより、前記複数のシリコン含有領域のいずれか一つ以上の表面にエッチング補助層を形成する第1工程と、
前記エッチング補助層にエネルギーを与える第2工程と、
を備え、
前記エネルギーは、前記エッチング補助層が除去されるエネルギー以上であって、前記エッチング補助層の直下に位置する領域がスパッタリングされるエネルギーよりも小さく、
前記第1工程及び前記第2工程を含むシーケンスが繰り返して実行されるエッチング方法。 - 前記エッチング補助層は、
前記シリコン含有領域の表面を改質した改質層、又は、
前記シリコン含有領域の表面上に堆積物を堆積させた堆積層、
である請求項1に記載のエッチング方法。 - 個々の前記シリコン含有領域は、SiC、SiOC、SiOCN、SiON、Si3N4、SiCN、及びSiO2からなる群から選択される1種を含む、
請求項1又は2に記載のエッチング方法。 - 前記処理ガスは、前記シリコン含有領域の表層原子との結合により、前記エッチング補助層を形成可能なガスであり、
炭素含有ガス、酸素含有ガス、窒素含有ガス、ハロゲン含有ガス、及び、水素含有ガスからなる群から選択される少なくともいずれか1種のガスを含む、
請求項1乃至3のいずれか一項に記載のエッチング方法。 - 前記炭素含有ガスは、ハイドロフルオロカーボンガス、又は、フルオロカーボンガスであり、
前記酸素含有ガスは、O2、CO、COS又は、CO2であり、
前記窒素含有ガスは、N2、NH3、又は、NF3であり、
前記ハロゲン含有ガスは、Cl2、HBr、NF3、CxHyFz、又は、CxFy(x、y、zは自然数)であり、
前記水素含有ガスは、H2である、
請求項4に記載のエッチング方法。 - 前記処理ガスは、NF3又はCHF3を含む、
請求項1乃至5のいずれか一項に記載のエッチング方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016101744A JP6606464B2 (ja) | 2016-05-20 | 2016-05-20 | エッチング方法 |
TW106115534A TWI766866B (zh) | 2016-05-20 | 2017-05-11 | 蝕刻方法 |
CN201780031109.3A CN109219866B (zh) | 2016-05-20 | 2017-05-16 | 蚀刻方法 |
PCT/JP2017/018375 WO2017199958A1 (ja) | 2016-05-20 | 2017-05-16 | エッチング方法 |
US16/069,944 US10553442B2 (en) | 2016-05-20 | 2017-05-16 | Etching method |
KR1020187032891A KR102496968B1 (ko) | 2016-05-20 | 2017-05-16 | 에칭 방법 |
US16/733,957 US11462412B2 (en) | 2016-05-20 | 2020-01-03 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016101744A JP6606464B2 (ja) | 2016-05-20 | 2016-05-20 | エッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017208510A true JP2017208510A (ja) | 2017-11-24 |
JP6606464B2 JP6606464B2 (ja) | 2019-11-13 |
Family
ID=60325138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016101744A Active JP6606464B2 (ja) | 2016-05-20 | 2016-05-20 | エッチング方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10553442B2 (ja) |
JP (1) | JP6606464B2 (ja) |
KR (1) | KR102496968B1 (ja) |
CN (1) | CN109219866B (ja) |
TW (1) | TWI766866B (ja) |
WO (1) | WO2017199958A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019235196A1 (ja) * | 2018-06-08 | 2019-12-12 | 株式会社アルバック | 酸化膜除去方法、および、酸化膜除去装置 |
WO2020005394A1 (en) * | 2018-06-29 | 2020-01-02 | Tokyo Electron Limited | Method of isotropic etching of silicon oxide utilizing fluorocarbon chemistry |
JP2020053615A (ja) * | 2018-09-28 | 2020-04-02 | 東京エレクトロン株式会社 | エッチング方法 |
JP2020119918A (ja) * | 2019-01-18 | 2020-08-06 | 東京エレクトロン株式会社 | 膜をエッチングする方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
JP7190938B2 (ja) * | 2019-02-27 | 2022-12-16 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61258433A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | エッチングの方法およびエッチング装置 |
JP2006024730A (ja) * | 2004-07-08 | 2006-01-26 | Sony Corp | 半導体装置の製造方法 |
JP2006135210A (ja) * | 2004-11-09 | 2006-05-25 | Sony Corp | 絶縁膜の加工方法 |
JP2006165228A (ja) * | 2004-12-07 | 2006-06-22 | Toyama Prefecture | プラズマエッチング方法 |
JP2014532988A (ja) * | 2011-10-27 | 2014-12-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 低k及びその他の誘電体膜をエッチングするための処理チャンバ |
JP2016027594A (ja) * | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770513A (ja) * | 1993-08-02 | 1995-03-14 | Kansai Paint Co Ltd | 上塗用塗料組成物 |
JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
US5965035A (en) | 1997-10-23 | 1999-10-12 | Applied Materials, Inc. | Self aligned contact etch using difluoromethane and trifluoromethane |
US6656375B1 (en) | 1998-01-28 | 2003-12-02 | International Business Machines Corporation | Selective nitride: oxide anisotropic etch process |
JP2000307001A (ja) | 1999-04-22 | 2000-11-02 | Sony Corp | 半導体装置の製造方法 |
JP2002319574A (ja) | 2001-04-23 | 2002-10-31 | Nec Corp | 窒化シリコン膜の除去方法 |
US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
JP5580844B2 (ja) | 2012-03-06 | 2014-08-27 | 東京エレクトロン株式会社 | エッチング方法 |
US9620382B2 (en) * | 2013-12-06 | 2017-04-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
JP6396699B2 (ja) * | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
JP6230954B2 (ja) * | 2014-05-09 | 2017-11-15 | 東京エレクトロン株式会社 | エッチング方法 |
JP6315809B2 (ja) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
-
2016
- 2016-05-20 JP JP2016101744A patent/JP6606464B2/ja active Active
-
2017
- 2017-05-11 TW TW106115534A patent/TWI766866B/zh active
- 2017-05-16 US US16/069,944 patent/US10553442B2/en active Active
- 2017-05-16 KR KR1020187032891A patent/KR102496968B1/ko active IP Right Grant
- 2017-05-16 CN CN201780031109.3A patent/CN109219866B/zh active Active
- 2017-05-16 WO PCT/JP2017/018375 patent/WO2017199958A1/ja active Application Filing
-
2020
- 2020-01-03 US US16/733,957 patent/US11462412B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61258433A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | エッチングの方法およびエッチング装置 |
JP2006024730A (ja) * | 2004-07-08 | 2006-01-26 | Sony Corp | 半導体装置の製造方法 |
JP2006135210A (ja) * | 2004-11-09 | 2006-05-25 | Sony Corp | 絶縁膜の加工方法 |
JP2006165228A (ja) * | 2004-12-07 | 2006-06-22 | Toyama Prefecture | プラズマエッチング方法 |
JP2014532988A (ja) * | 2011-10-27 | 2014-12-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 低k及びその他の誘電体膜をエッチングするための処理チャンバ |
JP2016027594A (ja) * | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019235196A1 (ja) * | 2018-06-08 | 2019-12-12 | 株式会社アルバック | 酸化膜除去方法、および、酸化膜除去装置 |
CN112204713A (zh) * | 2018-06-08 | 2021-01-08 | 株式会社爱发科 | 氧化膜除去方法及氧化膜除去装置 |
JPWO2019235196A1 (ja) * | 2018-06-08 | 2021-06-17 | 株式会社アルバック | 酸化膜除去方法、および、酸化膜除去装置 |
WO2020005394A1 (en) * | 2018-06-29 | 2020-01-02 | Tokyo Electron Limited | Method of isotropic etching of silicon oxide utilizing fluorocarbon chemistry |
US10937662B2 (en) | 2018-06-29 | 2021-03-02 | Tokyo Electron Limited | Method of isotropic etching of silicon oxide utilizing fluorocarbon chemistry |
JP2020053615A (ja) * | 2018-09-28 | 2020-04-02 | 東京エレクトロン株式会社 | エッチング方法 |
WO2020067179A1 (ja) * | 2018-09-28 | 2020-04-02 | 東京エレクトロン株式会社 | エッチング方法 |
JP7138529B2 (ja) | 2018-09-28 | 2022-09-16 | 東京エレクトロン株式会社 | エッチング方法 |
JP2020119918A (ja) * | 2019-01-18 | 2020-08-06 | 東京エレクトロン株式会社 | 膜をエッチングする方法 |
JP7174634B2 (ja) | 2019-01-18 | 2022-11-17 | 東京エレクトロン株式会社 | 膜をエッチングする方法 |
Also Published As
Publication number | Publication date |
---|---|
US20200144068A1 (en) | 2020-05-07 |
TWI766866B (zh) | 2022-06-11 |
JP6606464B2 (ja) | 2019-11-13 |
CN109219866B (zh) | 2023-06-23 |
US10553442B2 (en) | 2020-02-04 |
US20190019685A1 (en) | 2019-01-17 |
TW201742149A (zh) | 2017-12-01 |
KR20190008227A (ko) | 2019-01-23 |
WO2017199958A1 (ja) | 2017-11-23 |
US11462412B2 (en) | 2022-10-04 |
CN109219866A (zh) | 2019-01-15 |
KR102496968B1 (ko) | 2023-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6689674B2 (ja) | エッチング方法 | |
JP6606464B2 (ja) | エッチング方法 | |
JP6529357B2 (ja) | エッチング方法 | |
US20220051904A1 (en) | Etching method | |
KR102513051B1 (ko) | 에칭 방법 | |
US20200111679A1 (en) | Etching method | |
JP6521848B2 (ja) | エッチング方法 | |
US10580655B2 (en) | Plasma etching method for selectively etching silicon oxide with respect to silicon nitride | |
JP2018037453A (ja) | 被処理体を処理する方法 | |
JP6550278B2 (ja) | エッチング方法 | |
JP6592400B2 (ja) | エッチング方法 | |
KR20230129345A (ko) | 플라즈마 처리 장치 및 에칭 방법 | |
US9754797B2 (en) | Etching method for selectively etching silicon oxide with respect to silicon nitride | |
JP2018078138A (ja) | 被処理体を処理する方法 | |
JP2017204531A (ja) | エッチング方法 | |
US9633864B2 (en) | Etching method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180906 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190924 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191018 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6606464 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |