DE102016200026B8 - Wafer-Herstellungsverfahren - Google Patents
Wafer-Herstellungsverfahren Download PDFInfo
- Publication number
- DE102016200026B8 DE102016200026B8 DE102016200026.8A DE102016200026A DE102016200026B8 DE 102016200026 B8 DE102016200026 B8 DE 102016200026B8 DE 102016200026 A DE102016200026 A DE 102016200026A DE 102016200026 B8 DE102016200026 B8 DE 102016200026B8
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- wafer manufacturing
- wafer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-001040 | 2015-01-06 | ||
JP2015001040A JP6391471B2 (ja) | 2015-01-06 | 2015-01-06 | ウエーハの生成方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102016200026A1 DE102016200026A1 (de) | 2016-07-07 |
DE102016200026B4 DE102016200026B4 (de) | 2023-04-27 |
DE102016200026B8 true DE102016200026B8 (de) | 2023-06-22 |
Family
ID=56133244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102016200026.8A Active DE102016200026B8 (de) | 2015-01-06 | 2016-01-05 | Wafer-Herstellungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US9925619B2 (de) |
JP (1) | JP6391471B2 (de) |
KR (1) | KR102341604B1 (de) |
CN (1) | CN105750741B (de) |
DE (1) | DE102016200026B8 (de) |
MY (1) | MY177233A (de) |
SG (1) | SG10201510273SA (de) |
TW (1) | TWI662612B (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6723877B2 (ja) * | 2016-08-29 | 2020-07-15 | 株式会社ディスコ | ウエーハ生成方法 |
JP6773506B2 (ja) * | 2016-09-29 | 2020-10-21 | 株式会社ディスコ | ウエーハ生成方法 |
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
JP6773539B2 (ja) * | 2016-12-06 | 2020-10-21 | 株式会社ディスコ | ウエーハ生成方法 |
JP6858587B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
JP6858586B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
JP6904793B2 (ja) * | 2017-06-08 | 2021-07-21 | 株式会社ディスコ | ウエーハ生成装置 |
US11264280B2 (en) | 2017-06-19 | 2022-03-01 | Rohm Co., Ltd. | Semiconductor device manufacturing method and wafer-attached structure |
JP6976745B2 (ja) * | 2017-06-30 | 2021-12-08 | 株式会社ディスコ | ウエーハ生成装置 |
JP6961297B2 (ja) * | 2017-07-24 | 2021-11-05 | 株式会社ディスコ | チップの製造方法 |
JP2019033134A (ja) * | 2017-08-04 | 2019-02-28 | 株式会社ディスコ | ウエーハ生成方法 |
JP6946153B2 (ja) * | 2017-11-16 | 2021-10-06 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
JP6974133B2 (ja) * | 2017-11-22 | 2021-12-01 | 株式会社ディスコ | SiCインゴットの成型方法 |
JP6976828B2 (ja) * | 2017-11-24 | 2021-12-08 | 株式会社ディスコ | 剥離装置 |
JP7034683B2 (ja) * | 2017-11-29 | 2022-03-14 | 株式会社ディスコ | 剥離装置 |
JP6959120B2 (ja) * | 2017-12-05 | 2021-11-02 | 株式会社ディスコ | 剥離装置 |
JP7009194B2 (ja) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | ウエーハ生成装置および搬送トレー |
JP7046617B2 (ja) * | 2018-01-22 | 2022-04-04 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7123583B2 (ja) * | 2018-03-14 | 2022-08-23 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7027215B2 (ja) * | 2018-03-27 | 2022-03-01 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7073172B2 (ja) * | 2018-04-03 | 2022-05-23 | 株式会社ディスコ | ウエーハの生成方法 |
US10896815B2 (en) * | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
JP7140576B2 (ja) * | 2018-07-12 | 2022-09-21 | 株式会社ディスコ | ウェーハの分割方法 |
JP7327920B2 (ja) * | 2018-09-28 | 2023-08-16 | 株式会社ディスコ | ダイヤモンド基板生成方法 |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) * | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
CN111463172A (zh) * | 2019-01-21 | 2020-07-28 | 瀚宇彩晶股份有限公司 | 电子装置的制作方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
SE543075C2 (en) | 2019-05-23 | 2020-09-29 | Ascatron Ab | Crystal efficient SiC device wafer production |
JP7442332B2 (ja) | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
JP7408475B2 (ja) | 2020-04-16 | 2024-01-05 | 株式会社ディスコ | 剥離装置 |
CN111889896B (zh) * | 2020-07-02 | 2022-05-03 | 松山湖材料实验室 | 一种超声协同激光的晶锭剥离方法 |
CN116093006B (zh) * | 2023-03-06 | 2023-07-25 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | SiC晶片高低频复合振动加热剥离装置及SiC晶片制备方法 |
Citations (2)
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US3112850A (en) | 1962-10-31 | 1963-12-03 | United Aircraft Corp | Dicing of micro-semiconductors |
US20050217560A1 (en) | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
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JP6358941B2 (ja) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395613B2 (ja) * | 2015-01-06 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395633B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395634B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6425606B2 (ja) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482389B2 (ja) | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472333B2 (ja) | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482423B2 (ja) | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6486239B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6486240B2 (ja) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
-
2015
- 2015-01-06 JP JP2015001040A patent/JP6391471B2/ja active Active
- 2015-12-03 KR KR1020150171630A patent/KR102341604B1/ko active IP Right Grant
- 2015-12-08 TW TW104141114A patent/TWI662612B/zh active
- 2015-12-15 SG SG10201510273SA patent/SG10201510273SA/en unknown
- 2015-12-15 MY MYPI2015704562A patent/MY177233A/en unknown
- 2015-12-29 CN CN201511008904.XA patent/CN105750741B/zh active Active
-
2016
- 2016-01-05 DE DE102016200026.8A patent/DE102016200026B8/de active Active
- 2016-01-05 US US14/988,378 patent/US9925619B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3112850A (en) | 1962-10-31 | 1963-12-03 | United Aircraft Corp | Dicing of micro-semiconductors |
US20050217560A1 (en) | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2016124015A (ja) | 2016-07-11 |
KR102341604B1 (ko) | 2021-12-22 |
KR20160084800A (ko) | 2016-07-14 |
TWI662612B (zh) | 2019-06-11 |
TW201635363A (zh) | 2016-10-01 |
JP6391471B2 (ja) | 2018-09-19 |
US9925619B2 (en) | 2018-03-27 |
DE102016200026B4 (de) | 2023-04-27 |
CN105750741B (zh) | 2020-01-31 |
DE102016200026A1 (de) | 2016-07-07 |
US20160193691A1 (en) | 2016-07-07 |
SG10201510273SA (en) | 2016-08-30 |
MY177233A (en) | 2020-09-09 |
CN105750741A (zh) | 2016-07-13 |
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