TWI800668B - 晶片製造方法 - Google Patents

晶片製造方法 Download PDF

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Publication number
TWI800668B
TWI800668B TW108126555A TW108126555A TWI800668B TW I800668 B TWI800668 B TW I800668B TW 108126555 A TW108126555 A TW 108126555A TW 108126555 A TW108126555 A TW 108126555A TW I800668 B TWI800668 B TW I800668B
Authority
TW
Taiwan
Prior art keywords
wafer manufacturing
wafer
manufacturing
Prior art date
Application number
TW108126555A
Other languages
English (en)
Other versions
TW202008452A (zh
Inventor
源田悟史
小川雄輝
小田中健太郎
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202008452A publication Critical patent/TW202008452A/zh
Application granted granted Critical
Publication of TWI800668B publication Critical patent/TWI800668B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW108126555A 2018-07-31 2019-07-26 晶片製造方法 TWI800668B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018143126A JP7072993B2 (ja) 2018-07-31 2018-07-31 チップ製造方法
JP2018-143126 2018-07-31

Publications (2)

Publication Number Publication Date
TW202008452A TW202008452A (zh) 2020-02-16
TWI800668B true TWI800668B (zh) 2023-05-01

Family

ID=69383822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126555A TWI800668B (zh) 2018-07-31 2019-07-26 晶片製造方法

Country Status (5)

Country Link
JP (1) JP7072993B2 (zh)
KR (1) KR20200014195A (zh)
CN (1) CN110783185B (zh)
SG (1) SG10201906679RA (zh)
TW (1) TWI800668B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7273756B2 (ja) * 2020-03-18 2023-05-15 株式会社東芝 半導体装置及びその製造方法
JP7450426B2 (ja) 2020-03-24 2024-03-15 株式会社ディスコ 被加工物の加工方法
KR102405460B1 (ko) * 2020-06-26 2022-06-07 매그나칩 반도체 유한회사 초단파 펄스 레이저 미세 가공을 이용한 반도체 다이 형성 방법 및 패키징 방법
CN113649709A (zh) * 2021-08-16 2021-11-16 湖北三维半导体集成创新中心有限责任公司 晶圆切割方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201517150A (zh) * 2013-10-03 2015-05-01 Disco Corp 晶圓之加工方法
US20170140989A1 (en) * 2015-11-16 2017-05-18 Disco Corporation Wafer dividing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583279B2 (ja) * 1998-01-13 2004-11-04 三菱電機株式会社 穴あけ加工方法
JP4694845B2 (ja) 2005-01-05 2011-06-08 株式会社ディスコ ウエーハの分割方法
JP2011035302A (ja) * 2009-08-05 2011-02-17 Renesas Electronics Corp 半導体装置の製造方法
US8383984B2 (en) 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
US9919380B2 (en) 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
JP2015020195A (ja) 2013-07-19 2015-02-02 アイシン精機株式会社 レーザ加工装置、レーザ加工方法、及びレーザ発振装置
CN104716066B (zh) * 2015-03-20 2018-03-30 上海华力微电子有限公司 一种侦测图形底部光刻胶残留的缺陷检测方法
CN106229309B (zh) * 2016-07-20 2019-05-07 日月光半导体(上海)有限公司 封装基板及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201517150A (zh) * 2013-10-03 2015-05-01 Disco Corp 晶圓之加工方法
US20170140989A1 (en) * 2015-11-16 2017-05-18 Disco Corporation Wafer dividing method
JP2017092363A (ja) * 2015-11-16 2017-05-25 株式会社ディスコ ウエーハの分割方法

Also Published As

Publication number Publication date
TW202008452A (zh) 2020-02-16
JP7072993B2 (ja) 2022-05-23
SG10201906679RA (en) 2020-02-27
KR20200014195A (ko) 2020-02-10
CN110783185B (zh) 2023-10-10
JP2020021786A (ja) 2020-02-06
CN110783185A (zh) 2020-02-11

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