DK3093891T3 - Halvledersubstrat, halvlederindretning og fremgangsmåde til fremstilling af halvledersubstrat - Google Patents

Halvledersubstrat, halvlederindretning og fremgangsmåde til fremstilling af halvledersubstrat

Info

Publication number
DK3093891T3
DK3093891T3 DK15735020.8T DK15735020T DK3093891T3 DK 3093891 T3 DK3093891 T3 DK 3093891T3 DK 15735020 T DK15735020 T DK 15735020T DK 3093891 T3 DK3093891 T3 DK 3093891T3
Authority
DK
Denmark
Prior art keywords
semiconductor substrate
semiconductor
producing
semiconductor device
substrate
Prior art date
Application number
DK15735020.8T
Other languages
English (en)
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Application granted granted Critical
Publication of DK3093891T3 publication Critical patent/DK3093891T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
DK15735020.8T 2014-01-07 2015-01-07 Halvledersubstrat, halvlederindretning og fremgangsmåde til fremstilling af halvledersubstrat DK3093891T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410006568.4A CN103681992A (zh) 2014-01-07 2014-01-07 半导体衬底、半导体器件及半导体衬底制造方法
PCT/CN2015/070251 WO2015103976A1 (zh) 2014-01-07 2015-01-07 半导体衬底、半导体器件及半导体衬底制造方法

Publications (1)

Publication Number Publication Date
DK3093891T3 true DK3093891T3 (da) 2019-05-06

Family

ID=50318900

Family Applications (1)

Application Number Title Priority Date Filing Date
DK15735020.8T DK3093891T3 (da) 2014-01-07 2015-01-07 Halvledersubstrat, halvlederindretning og fremgangsmåde til fremstilling af halvledersubstrat

Country Status (8)

Country Link
US (1) US10249788B2 (da)
EP (1) EP3093891B1 (da)
JP (1) JP2017507478A (da)
KR (1) KR20160104723A (da)
CN (1) CN103681992A (da)
DK (1) DK3093891T3 (da)
SG (1) SG11201605542RA (da)
WO (1) WO2015103976A1 (da)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681992A (zh) * 2014-01-07 2014-03-26 苏州晶湛半导体有限公司 半导体衬底、半导体器件及半导体衬底制造方法
WO2017222513A1 (en) * 2016-06-22 2017-12-28 Intel Corporation Techniques for monolithic co-integration of silicon and iii-n semiconductor transistors
DE102016013540A1 (de) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH lll-V-Halbleiterdiode
JP6863423B2 (ja) * 2019-08-06 2021-04-21 信越半導体株式会社 電子デバイス用基板およびその製造方法
WO2023100577A1 (ja) * 2021-12-01 2023-06-08 信越半導体株式会社 電子デバイス用基板及びその製造方法
CN115347095B (zh) * 2022-06-13 2024-06-04 江苏第三代半导体研究院有限公司 基于氮化物单晶衬底的半导体器件结构及其应用
CN116779688A (zh) * 2023-07-28 2023-09-19 合肥安芯睿创半导体有限公司 一种具有结型p+保护的沟槽结构的碳化硅肖特基二极管及制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193517A (ja) * 1987-02-06 1988-08-10 Nec Corp 複合単結晶基板
JPH07335511A (ja) * 1994-06-13 1995-12-22 Nippon Telegr & Teleph Corp <Ntt> 張り合わせウエハ
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US6333208B1 (en) * 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US7348610B2 (en) * 2005-02-24 2008-03-25 International Business Machines Corporation Multiple layer and crystal plane orientation semiconductor substrate
CN101017864A (zh) * 2006-02-08 2007-08-15 中国科学院半导体研究所 具有超薄碳化硅中间层的硅基可协变衬底及制备方法
JP5009124B2 (ja) * 2007-01-04 2012-08-22 コバレントマテリアル株式会社 半導体基板の製造方法
JP4888276B2 (ja) * 2007-08-09 2012-02-29 三菱電機株式会社 半導体ウエハ装置
CN102217102B (zh) * 2008-11-14 2015-07-15 三星电子株式会社 半导体发光器件
CN102208337B (zh) * 2010-03-30 2014-04-09 杭州海鲸光电科技有限公司 一种硅基复合衬底及其制造方法
US8298923B2 (en) * 2010-10-27 2012-10-30 International Business Machinces Corporation Germanium-containing release layer for transfer of a silicon layer to a substrate
JP2013247362A (ja) * 2012-05-29 2013-12-09 Samsung Corning Precision Materials Co Ltd 半導体素子用薄膜貼り合わせ基板の製造方法
CN103035496B (zh) * 2012-12-11 2016-03-23 广州市众拓光电科技有限公司 一种生长在Si衬底上的GaN薄膜及其制备方法和应用
CN102978695A (zh) * 2012-12-12 2013-03-20 东莞市中镓半导体科技有限公司 半导体器件外延生长的隐形结构衬底
CN103296066B (zh) * 2013-05-31 2015-09-16 华南理工大学 生长在铝酸锶钽镧衬底上的GaN薄膜及其制备方法、应用
CN103681992A (zh) * 2014-01-07 2014-03-26 苏州晶湛半导体有限公司 半导体衬底、半导体器件及半导体衬底制造方法

Also Published As

Publication number Publication date
EP3093891A4 (en) 2017-01-25
CN103681992A (zh) 2014-03-26
EP3093891A1 (en) 2016-11-16
KR20160104723A (ko) 2016-09-05
US10249788B2 (en) 2019-04-02
JP2017507478A (ja) 2017-03-16
WO2015103976A1 (zh) 2015-07-16
US20160315220A1 (en) 2016-10-27
SG11201605542RA (en) 2016-08-30
EP3093891B1 (en) 2019-03-06

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