JP2017168659A - 半導体装置および製造方法 - Google Patents
半導体装置および製造方法 Download PDFInfo
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- JP2017168659A JP2017168659A JP2016053015A JP2016053015A JP2017168659A JP 2017168659 A JP2017168659 A JP 2017168659A JP 2016053015 A JP2016053015 A JP 2016053015A JP 2016053015 A JP2016053015 A JP 2016053015A JP 2017168659 A JP2017168659 A JP 2017168659A
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Abstract
【解決手段】半導体基板と、半導体基板に形成された活性領域と、半導体基板において活性領域よりも外側に形成されたガードリング部とを備え、ガードリング部は、半導体基板の上面において環状に形成されたガードリングと、ガードリングの上方に形成された層間絶縁膜と、ガードリングに沿って層間絶縁膜の上方に環状に形成されたフィールドプレートと、ガードリングに沿って環状に形成され、層間絶縁膜を貫通してガードリングとフィールドプレートとを接続するタングステンプラグとを有する半導体装置を提供する。
【選択図】図2
Description
特許文献1 特開2010−267655号公報
Claims (10)
- 半導体基板と、
前記半導体基板に形成された活性領域と、
前記半導体基板において前記活性領域よりも外側に形成されたガードリング部と
を備え、
前記ガードリング部は、
前記半導体基板の上面において環状に形成されたガードリングと、
前記ガードリングの上方に形成された層間絶縁膜と、
前記ガードリングに沿って前記層間絶縁膜の上方に環状に形成されたフィールドプレートと、
前記ガードリングに沿って環状に形成され、前記層間絶縁膜を貫通して前記ガードリングと前記フィールドプレートとを接続するタングステンプラグと
を有する半導体装置。 - 前記フィールドプレートがタングステンで形成された
請求項1に記載の半導体装置。 - 対応する前記ガードリングおよび前記フィールドプレートの間に、複数本の環状の前記タングステンプラグが形成されている
請求項1または2に記載の半導体装置。 - 前記ガードリング部は、隣接する2つの前記タングステンプラグを接続する接続プラグを更に有する
請求項3に記載の半導体装置。 - 前記複数本の環状の前記タングステンプラグにおいて、隣接する2つの前記タングステンプラグの距離が、前記タングステンプラグの1本分の幅よりも大きい
請求項3または4に記載の半導体装置。 - 前記活性領域の上方に設けられ、アルミニウムを含む材料で形成された素子電極と、
前記素子電極上に形成されためっき層と、
前記めっき層上に形成され、且つ、前記めっき層の一部の領域を露出させる保護膜と
を更に備える請求項2に記載の半導体装置。 - 前記活性領域に形成された半導体素子部と、
前記半導体素子部および前記ガードリング部の間において、前記層間絶縁膜を貫通して設けられ、タングステンで形成されたホール引抜プラグと
を更に備える請求項1から6のいずれか一項に記載の半導体装置。 - 前記活性領域の上方に設けられた素子電極を更に備え、
前記フィールドプレートが、前記素子電極と同一の材料で形成された
請求項1に記載の半導体装置。 - 半導体装置の製造方法であって、
ガードリングを、半導体基板の上面において環状に形成するガードリング形成段階と、
前記ガードリングの上方に層間絶縁膜を形成する絶縁膜形成段階と、
前記ガードリングに沿って環状に設けられ、前記層間絶縁膜を貫通するタングステンプラグを形成するとともに、前記ガードリングに沿って前記層間絶縁膜の上方に環状に設けられ、前記タングステンプラグと接続するフィールドプレートを形成するフィールドプレート形成段階と
を備える製造方法。 - 前記半導体基板の上面において前記ガードリングで囲まれる活性領域に、アルミニウムを含む材料で素子電極を形成する素子電極形成段階と、
前記素子電極形成段階および前記フィールドプレート形成段階の後に、前記半導体基板の上面側をめっきして、前記素子電極上にめっき層を形成するめっき段階と、
前記半導体基板の上面側に保護膜を形成する保護膜形成段階と
を更に備える請求項9に記載の製造方法。
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