JP2017155338A - 有機発光素子の蒸着装置 - Google Patents
有機発光素子の蒸着装置 Download PDFInfo
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- JP2017155338A JP2017155338A JP2017040149A JP2017040149A JP2017155338A JP 2017155338 A JP2017155338 A JP 2017155338A JP 2017040149 A JP2017040149 A JP 2017040149A JP 2017040149 A JP2017040149 A JP 2017040149A JP 2017155338 A JP2017155338 A JP 2017155338A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 145
- 230000008021 deposition Effects 0.000 claims description 27
- 238000003825 pressing Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 10
- 238000013021 overheating Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 9
- 230000005484 gravity Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 19
- 238000001179 sorption measurement Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Abstract
【解決手段】ガラスが上方に膨らんで撓った状態で中心部から縁部の方向に平面の静電チャックの底面に吸着され、これにより、ガラスの垂下量によるマスクの変形を防止することができる有機発光素子の蒸着装置を提供する。そして、ガラスとマスクを接触しない程度で最大限に近接させた後、それぞれの整列マークを測定してガラスとマスクを吸着させるので、整列工程を速かに遂行することができる。
【選択図】 図1
Description
一つ目の利点として、押圧部を用いて大型のガラスの縁部を押圧することによって中心部が上方に膨らんで撓うようにすることができ、
二つ目の利点として、静電チャックを用いてガラスの中心部から縁部まで完全に密着させることができ、
三つ目の利点として、ガラスを平面状態で維持することができるので、マスクと接触の際、マスクの変形が発生することを防止することができ、
四つ目の利点として、ガラスとマスクを密着させた状態でそれぞれの整列マークを測定して吸着させることができるので、整列工程を容易に且つ速かに進めることができる効果がある。
20 ガラス
21 第1マーク
100 有機発光素子の蒸着装置
110 支持部
111 傾斜面
112 接触領域
113 非接触領域
120 押圧部
121 ローラー
130 静電チャック
131 絶縁層
132 電極パターン
140 マスク
141 第2マーク
150 クーリングプレート
160 マグネットプレート
170 アラインカメラ
180 駆動部
Claims (8)
- ロードされたガラスの底面縁部を支持し、真空チャンバーの内部で昇降又は回転することができるように配置される支持部;
ガラスの中心部が上方に膨らんで撓うように前記支持部上でガラスの上面両側縁部を押圧する押圧部;
前記ガラスの上部で昇降するように配置されてガラスを吸着する静電チャック;及び
予め設定された所定の蒸着パターンを含み、前記ガラスの下部に固定されるマスク;
を含む、有機発光素子の蒸着装置。 - 前記支持部は、
ガラスの縁部から中心部の方向に前記支持部の上面が高くなるように傾斜面を備える、請求項1に記載の有機発光素子の蒸着装置。 - 前記押圧部は、
前記傾斜面の上部でガラスの縁部上面と接触する部分に設けられるローラーを含む、請求項2に記載の有機発光素子の蒸着装置。 - 前記静電チャックの上部に備えられ、ガラス又はマスクの過熱を防止するクーリングプレートをさらに含む、請求項1に記載の有機発光素子の蒸着装置。
- 前記静電チャックの上部に備えられ、ガラスと前記静電チャックが吸着された後、前記マスクとガラスが接触した状態を磁気力で維持させるマグネットプレートをさらに含む、請求項1に記載の有機発光素子の蒸着装置。
- 前記静電チャックの上部に備えられ、ガラスに備えられた第1マークとマスクに備えられた第2マークの整列状態を測定するアラインカメラをさらに含む、請求項1に記載の有機発光素子の蒸着装置。
- ロードされたガラスの底面縁部を支持し、真空チャンバーの内部で昇降又は回転することができるように配置される支持部;
前記ガラスの上部で昇降するように配置されてガラスを吸着する静電チャック;及び
予め設定された所定の蒸着パターンを含み、前記ガラスの下部に固定されるマスク;
を含む、有機発光素子の蒸着装置。 - 前記支持部上でガラスの上面両側縁部を押圧する押圧部をさらに含む、請求項7に記載の有機発光素子の蒸着装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0025401 | 2016-03-03 | ||
KR1020160025401A KR102520693B1 (ko) | 2016-03-03 | 2016-03-03 | 유기발광소자의 증착장치 |
Publications (1)
Publication Number | Publication Date |
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JP2017155338A true JP2017155338A (ja) | 2017-09-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017040149A Pending JP2017155338A (ja) | 2016-03-03 | 2017-03-03 | 有機発光素子の蒸着装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10581025B2 (ja) |
JP (1) | JP2017155338A (ja) |
KR (1) | KR102520693B1 (ja) |
CN (1) | CN107151782B (ja) |
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CN109837519A (zh) * | 2017-11-29 | 2019-06-04 | 佳能特机株式会社 | 成膜装置、成膜方法及有机el显示装置的制造方法 |
JP2019102801A (ja) * | 2017-11-29 | 2019-06-24 | キヤノントッキ株式会社 | 成膜装置及びそれを用いた有機el表示装置の製造方法 |
CN109972084A (zh) * | 2017-12-27 | 2019-07-05 | 佳能特机株式会社 | 成膜装置、成膜方法、以及电子设备的制造方法 |
JP2019216230A (ja) * | 2018-06-11 | 2019-12-19 | キヤノントッキ株式会社 | 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
KR20200011072A (ko) * | 2018-07-24 | 2020-02-03 | 주식회사 넵시스 | 기판 고정 및 회전 장치 |
JP2020021925A (ja) * | 2018-07-31 | 2020-02-06 | キヤノントッキ株式会社 | 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
JP2020021927A (ja) * | 2018-07-31 | 2020-02-06 | キヤノントッキ株式会社 | 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
JP2020050953A (ja) * | 2018-09-21 | 2020-04-02 | キヤノントッキ株式会社 | 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
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JP2022033147A (ja) * | 2017-12-27 | 2022-02-28 | キヤノントッキ株式会社 | 真空装置、成膜方法、及び電子デバイスの製造方法 |
CN115667572A (zh) * | 2021-01-22 | 2023-01-31 | 京东方科技集团股份有限公司 | 遮挡掩膜版、掩膜版组件及蒸镀装置 |
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JP7113861B2 (ja) * | 2020-03-13 | 2022-08-05 | キヤノントッキ株式会社 | マスク取付装置、成膜装置、マスク取付方法、成膜方法、電子デバイスの製造方法 |
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JP2006299358A (ja) * | 2005-04-21 | 2006-11-02 | Sumitomo Heavy Ind Ltd | 真空成膜装置及び真空成膜方法 |
JP2007287943A (ja) * | 2006-04-18 | 2007-11-01 | Canon Inc | 位置合わせ方法および装置 |
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KR102520693B1 (ko) | 2023-04-11 |
CN107151782A (zh) | 2017-09-12 |
KR20170103089A (ko) | 2017-09-13 |
CN107151782B (zh) | 2019-12-03 |
US10581025B2 (en) | 2020-03-03 |
US20170256753A1 (en) | 2017-09-07 |
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