JPH01313954A - 静電チャック - Google Patents
静電チャックInfo
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- JPH01313954A JPH01313954A JP63147696A JP14769688A JPH01313954A JP H01313954 A JPH01313954 A JP H01313954A JP 63147696 A JP63147696 A JP 63147696A JP 14769688 A JP14769688 A JP 14769688A JP H01313954 A JPH01313954 A JP H01313954A
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔概要〕
半導体素子などを製造する際に、基板の平面度を高精度
に保って露光する装置などのように、基板の平面度を高
精度に保つチャック装置に関し、基板の形状のいかんに
係わらず全面にわたって精度良く平坦に保持可能とする
ことを目的とし、電極上の絶縁層の上に、板状のワーク
を載せて、ワークと電極間に働く静電気力によりワーク
を吸着する方式の静電チャックにおいて、 板状ワークの中央部が最初に吸着され、外周部が最後に
吸着されるように、 静電チャックの中央部の静電吸着力が最大で、外周部寄
りの静電吸着力が次第に弱くなるように構成する。
に保って露光する装置などのように、基板の平面度を高
精度に保つチャック装置に関し、基板の形状のいかんに
係わらず全面にわたって精度良く平坦に保持可能とする
ことを目的とし、電極上の絶縁層の上に、板状のワーク
を載せて、ワークと電極間に働く静電気力によりワーク
を吸着する方式の静電チャックにおいて、 板状ワークの中央部が最初に吸着され、外周部が最後に
吸着されるように、 静電チャックの中央部の静電吸着力が最大で、外周部寄
りの静電吸着力が次第に弱くなるように構成する。
（産業上の利用分野〕
半導体素子の製造において、微細寸法を再現性よく形成
することは重要な技術であり、このためには様々な技術
が必要とされる。例えば露光装置においては、基板の平
面度を高精度に保つことが基本的に重要であるが、本発
明は、このように基板の平面度を高精度に保つチャック
装置に関する。
することは重要な技術であり、このためには様々な技術
が必要とされる。例えば露光装置においては、基板の平
面度を高精度に保つことが基本的に重要であるが、本発
明は、このように基板の平面度を高精度に保つチャック
装置に関する。
従来の静電チャック、例えば基板ホルダにおいては、基
板の周辺を機械的に押しつけて固定する構造になってい
る。ところが、基板にかかる力が局部的に集中し、基板
が反ったり、変形したりする問題がある。
板の周辺を機械的に押しつけて固定する構造になってい
る。ところが、基板にかかる力が局部的に集中し、基板
が反ったり、変形したりする問題がある。
この問題を解決するために、基板を静電気力で吸着する
静電チャックが試用されている。第８図は従来の静電チ
ャックを示す断面図である。基台１上に、電極２、絶縁
層３の順に設置され、絶縁層３の上に基板４などのワー
クを載置する。そして基板４と電極２との間に直流電源
Ｅを接続し、静電気を発生させると、静電気力により、
基板４はその全面にわたって絶縁層３側に吸着・保持さ
れる。
静電チャックが試用されている。第８図は従来の静電チ
ャックを示す断面図である。基台１上に、電極２、絶縁
層３の順に設置され、絶縁層３の上に基板４などのワー
クを載置する。そして基板４と電極２との間に直流電源
Ｅを接続し、静電気を発生させると、静電気力により、
基板４はその全面にわたって絶縁層３側に吸着・保持さ
れる。
ところで、保持される基板４は、すべてが平坦度の良い
ものばかりとは限らず、凸状に反ったものや、凹状に反
ったものなどが混在している。
ものばかりとは限らず、凸状に反ったものや、凹状に反
ったものなどが混在している。
第９図のように凹状に反った基板においては、電極２に
最も近い中央部に作用する静電吸着力が最も大きい。電
極２と基板４間に作用する静電吸着力は、両者間の間隔
が小さい程大きい。そのため、第９図のように凹状に反
った基板の場合は、中央部寄りが吸着されると、その結
果、外周寄りの位置の隙間が減少し、静電吸着力が増大
して吸着される。このようにして、中央部から外周寄り
に次第に静電吸着力が増大し、中央部から自由度の高い
外周側が静電吸着され、最後に外周部が吸着される。
最も近い中央部に作用する静電吸着力が最も大きい。電
極２と基板４間に作用する静電吸着力は、両者間の間隔
が小さい程大きい。そのため、第９図のように凹状に反
った基板の場合は、中央部寄りが吸着されると、その結
果、外周寄りの位置の隙間が減少し、静電吸着力が増大
して吸着される。このようにして、中央部から外周寄り
に次第に静電吸着力が増大し、中央部から自由度の高い
外周側が静電吸着され、最後に外周部が吸着される。
これに対し、第１０図のように、凸状の基板では、自由
度の高い外周側から中央部に吸着部が移動する。ところ
が、自由度の高い外周側が先に吸着固定されて、自由度
が無くなっているため、自由度の少ない中央部側が、絶
縁層３側に変形できず、吸着不能となる。その結果、平
面状態で保持することが不可能となる。
度の高い外周側から中央部に吸着部が移動する。ところ
が、自由度の高い外周側が先に吸着固定されて、自由度
が無くなっているため、自由度の少ない中央部側が、絶
縁層３側に変形できず、吸着不能となる。その結果、平
面状態で保持することが不可能となる。
本発明の技術的課題は、従来の静電チャックにおけるこ
のような問題を解消し、基板の形状のいかに係わらず全
面にわたって精度良く平坦に保持可能とすることにある
。
のような問題を解消し、基板の形状のいかに係わらず全
面にわたって精度良く平坦に保持可能とすることにある
。
第１図は本発明による静電チャックの基本原理を説明す
る断面図である。前記のように基板の中央部が最初に吸
着され、次第に外周寄りが吸着されるようにするには、
ワークである基板の形状のいかにん係わらず常に基板中
央部の静電吸着力が最大となることが必要である。
る断面図である。前記のように基板の中央部が最初に吸
着され、次第に外周寄りが吸着されるようにするには、
ワークである基板の形状のいかにん係わらず常に基板中
央部の静電吸着力が最大となることが必要である。
このために本発明は、電極２上の絶縁層３に工夫を加え
ている。すなわち、絶縁層３に凹溝などによって空間を
形成するが、この空間を、基板４の中央部寄りを小さく
し、外周寄りを大きくする。
ている。すなわち、絶縁層３に凹溝などによって空間を
形成するが、この空間を、基板４の中央部寄りを小さく
し、外周寄りを大きくする。
空間の大きさを変えるには、例えば第１図に示すように
、絶縁層に溝５を設け、静電チャックの中央付近では溝
５の深さを浅くして中央付近の吸着力を強くし、かつ静
電チャックの中央から離れるに従って溝の深さを深（す
る。
、絶縁層に溝５を設け、静電チャックの中央付近では溝
５の深さを浅くして中央付近の吸着力を強くし、かつ静
電チャックの中央から離れるに従って溝の深さを深（す
る。
あるいは、溝の深さは一定とし、溝の幅を変えるなどの
手法も可能である。すなわち、基板４の中央部寄りほど
溝の幅を狭くし、外周寄りほど大きくする。
手法も可能である。すなわち、基板４の中央部寄りほど
溝の幅を狭くし、外周寄りほど大きくする。
なお、絶縁層３に空間を設けるための溝等は、絶縁層３
の表面に設けてもよく、電極２側に設けてもよい。また
、絶縁層３の内部に空洞を設け、その大きさを、外周寄
り程大きくすることもできる。さらに、絶縁層３に設け
る溝、その他の空間には、ワーク（４）と誘電率の異な
る物質を満たしてもよい。
の表面に設けてもよく、電極２側に設けてもよい。また
、絶縁層３の内部に空洞を設け、その大きさを、外周寄
り程大きくすることもできる。さらに、絶縁層３に設け
る溝、その他の空間には、ワーク（４）と誘電率の異な
る物質を満たしてもよい。
このように、絶縁層３に設ける空間を、外周寄り程大き
くすることで、基板４の中央部の静電吸着力を強くし、
外周寄り程弱くしている。そのため、絶縁層３の上に基
板を載せ、電極２と基板４の間に電圧を印加すると、次
の原理で、基板の中央部寄りの静電気力が、外周寄りに
比べて大きくなる。
くすることで、基板４の中央部の静電吸着力を強くし、
外周寄り程弱くしている。そのため、絶縁層３の上に基
板を載せ、電極２と基板４の間に電圧を印加すると、次
の原理で、基板の中央部寄りの静電気力が、外周寄りに
比べて大きくなる。
ある物質の誘電率をεとすると、単位面積当たりの静電
吸着力は、 Ｆ＝１／２ε（Ｖ／ｄ）” で現される。
吸着力は、 Ｆ＝１／２ε（Ｖ／ｄ）” で現される。
ここに、ε：絶縁層の誘電率
Ｖ：電圧
ｄ二絶縁層の厚み
ここでεの値は、アルミナで約１０、ガラスで３、空気
または真空で１、であるから、溝が深くて空気または真
空の部分が厚い領域は、εの値が減少するため、吸着力
が弱くなる。
または真空で１、であるから、溝が深くて空気または真
空の部分が厚い領域は、εの値が減少するため、吸着力
が弱くなる。
したがって、絶縁層３の中央部寄りの溝を浅くし、外周
寄りを次第に深くしていくことで、中央部寄りの静電吸
着力を大きくし、外周側が次第に弱くなるように制御す
ることができる。
寄りを次第に深くしていくことで、中央部寄りの静電吸
着力を大きくし、外周側が次第に弱くなるように制御す
ることができる。
第２図は本発明の第一実施例を示す平面図と断面図であ
る。この実施例は、静電チャックの半径方向の位置によ
って絶縁層３における空間の大きさを変えるために、溝
の深さを変えた例である。
る。この実施例は、静電チャックの半径方向の位置によ
って絶縁層３における空間の大きさを変えるために、溝
の深さを変えた例である。
すなわち、溝５８の深さが、外周寄りほど深（なってい
る。また、これらの溝５ａ・・・は、同心円杖に形成さ
れている。
る。また、これらの溝５ａ・・・は、同心円杖に形成さ
れている。
第３図は第二の実施例であり、（ａ）の平面図に示すよ
うに、溝５ｂ・・・を縦横に形成した例である。この場
合も、外周寄りの溝５ｂを次第に深くしている。
うに、溝５ｂ・・・を縦横に形成した例である。この場
合も、外周寄りの溝５ｂを次第に深くしている。
第４図は、溝の深さを変えるのでなく、溝幅を変える例
である。すなわち、外周寄りの溝５ｂの幅を次第に広く
することで、絶縁層３における単位容積当たりの空間を
、次第に増大している。
である。すなわち、外周寄りの溝５ｂの幅を次第に広く
することで、絶縁層３における単位容積当たりの空間を
、次第に増大している。
第５図は第四実施例で、断面Ｖ字状の溝５０とし、かつ
外周寄りの溝の深さを次第に増大することで、溝の深さ
も幅も増大させた例である。
外周寄りの溝の深さを次第に増大することで、溝の深さ
も幅も増大させた例である。
第６図は第五実施例である。この実施例は、溝や凹部を
形成するのでなく、絶縁層３自体の肉厚を次第に変化さ
せた例である。すなわち、絶縁層３の中央部の肉厚が最
大で、中央部から離れるに従って肉厚が薄くなっている
。 ■上記の各実施例では、電極と
基板間に電圧を印加するが、第７図に示すように、電極
を２つのパターン２ａ、２ｂに分割して、画電極２ａと
２ｂ間に電圧を印加しても良い。
形成するのでなく、絶縁層３自体の肉厚を次第に変化さ
せた例である。すなわち、絶縁層３の中央部の肉厚が最
大で、中央部から離れるに従って肉厚が薄くなっている
。 ■上記の各実施例では、電極と
基板間に電圧を印加するが、第７図に示すように、電極
を２つのパターン２ａ、２ｂに分割して、画電極２ａと
２ｂ間に電圧を印加しても良い。
［発明の効果〕
このように誘電率εの大きな絶縁層３の占める容積を、
中央部において最大となり、外周寄りが次第に減少する
構造とすることで、常に中央部の静電吸着力が最大とな
るように構成されている。
中央部において最大となり、外周寄りが次第に減少する
構造とすることで、常に中央部の静電吸着力が最大とな
るように構成されている。
そのため、凸状の基板であっても、中央付近で強い力を
受け、中央部から次第に外周寄りに静電吸着され、自由
端である外周側が最後に吸着されるため、基板を確実に
平面化した状態で保持できる。
受け、中央部から次第に外周寄りに静電吸着され、自由
端である外周側が最後に吸着されるため、基板を確実に
平面化した状態で保持できる。
通常基板の反りは、５０〜１００μｍ程度であるが、チ
ャック装置自身の平面度は１〜２μｍくらいに作製可能
なため、本発明思想により、基板を静電チャックに密着
させることで、数μｍ以内の基板平面度が得られる。
ャック装置自身の平面度は１〜２μｍくらいに作製可能
なため、本発明思想により、基板を静電チャックに密着
させることで、数μｍ以内の基板平面度が得られる。
第１図は本発明による静電チャックの基本原理を説明す
る断面図、第２図〜第７図は本発明の各種実施例を示す
図、第８図は静電チャックの原理を説明する断面図、第
９図、第１０図は基板の断面形状による静電吸着作用の
差異を説明する断面図である。 図において、２は電極、３は絶縁層、４は基板（ワーク
）、５．５ａ、５ｂ、５ｃは溝、６はεの小さな材料か
らなるリングをそれぞれ示す。 本発明の基本原理 第１図 第−実施例 第二＊施例 第３図 多−５」＝−タ鵬乙施イタリ 第４図 ５ｃｖ導 ′Ｊ／ＥＪ＋１！７＊施例 第５図 塔上＊＃Ｌ例 第六＊施例 第７図
る断面図、第２図〜第７図は本発明の各種実施例を示す
図、第８図は静電チャックの原理を説明する断面図、第
９図、第１０図は基板の断面形状による静電吸着作用の
差異を説明する断面図である。 図において、２は電極、３は絶縁層、４は基板（ワーク
）、５．５ａ、５ｂ、５ｃは溝、６はεの小さな材料か
らなるリングをそれぞれ示す。 本発明の基本原理 第１図 第−実施例 第二＊施例 第３図 多−５」＝−タ鵬乙施イタリ 第４図 ５ｃｖ導 ′Ｊ／ＥＪ＋１！７＊施例 第５図 塔上＊＃Ｌ例 第六＊施例 第７図
Claims (1)
- 【特許請求の範囲】 １、電極（２）上の絶縁層（３）の上に、板状のワーク
（４）を載せて、ワーク（４）と電極（２）間に働く静
電気力によりワーク（４）を吸着する方式の静電チャッ
クにおいて、 板状ワーク（４）の中央部が最初に吸着され、外周部が
最後に吸着されるように、 静電チャックの中央部の静電吸着力が最大で、外周部寄
りの静電吸着力が次第に弱くなるように構成されている
ことを特徴とする静電チャック。 ２、前記の絶縁層（３）の領域に、溝等により空間を設
け、かつ単位容積当たりの空間の大きさを、ワーク（４
）の中央部寄りを小さくし、外周寄りほど次第に大きく
することで、ワーク（４）の中央部の静電吸着力が最大
となり、中央から離れるに従って静電吸着力が弱くなる
ように構成したことを特徴とする請求項１記載の静電チ
ャック。 ３、前記の絶縁層（３）の領域に、溝等により空間を設
け、かつ単位容積当たりの空間の大きさを、ワーク（４
）の中央部寄りを小さくし、外周寄りほど次第に大きく
すると共に、この空間にワーク（４）と誘電率の異なる
物質を満たすことで、ワーク（４）の中央部の静電吸着
力が最大となり、中央から離れるに従って静電吸着力が
弱くなるように構成したことを特徴とする請求項２記載
の静電チャック。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63147696A JPH01313954A (ja) | 1988-06-14 | 1988-06-14 | 静電チャック |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63147696A JPH01313954A (ja) | 1988-06-14 | 1988-06-14 | 静電チャック |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01313954A true JPH01313954A (ja) | 1989-12-19 |
Family
ID=15436195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63147696A Pending JPH01313954A (ja) | 1988-06-14 | 1988-06-14 | 静電チャック |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01313954A (ja) |
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