JP2017085013A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2017085013A JP2017085013A JP2015213329A JP2015213329A JP2017085013A JP 2017085013 A JP2017085013 A JP 2017085013A JP 2015213329 A JP2015213329 A JP 2015213329A JP 2015213329 A JP2015213329 A JP 2015213329A JP 2017085013 A JP2017085013 A JP 2017085013A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- compound semiconductor
- semiconductor device
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 150000001875 compounds Chemical class 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 54
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 34
- 230000007423 decrease Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 abstract description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 53
- 238000000034 method Methods 0.000 description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- OTVPWGHMBHYUAX-UHFFFAOYSA-N [Fe].[CH]1C=CC=C1 Chemical compound [Fe].[CH]1C=CC=C1 OTVPWGHMBHYUAX-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/333—A frequency modulator or demodulator being used in the amplifier circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
先ず、第1の実施形態について説明する。第1の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図1(a)は、第1の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第2の実施形態について説明する。第2の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図3(a)は、第2の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第3の実施形態について説明する。第3の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図9は、第3の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第4の実施形態について説明する。第4の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図10は、第4の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第5の実施形態について説明する。第5の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図11は、第5の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第6の実施形態について説明する。第6の実施形態は、HEMTを備えた化合物半導体装置の一例に関する。図12は、第6の実施形態に係る化合物半導体装置の構造を示す断面図である。
次に、第7の実施形態について説明する。第7の実施形態は、HEMTのディスクリートパッケージに関する。図13は、第7の実施形態に係るディスクリートパッケージを示す図である。
次に、第8の実施形態について説明する。第8の実施形態は、HEMTを備えたPFC(Power Factor Correction)回路に関する。図14は、第8の実施形態に係るPFC回路を示す結線図である。
次に、第9の実施形態について説明する。第9の実施形態は、HEMTを備えた電源装置に関する。図15は、第9の実施形態に係る電源装置を示す結線図である。
次に、第10の実施形態について説明する。第10の実施形態は、HEMTを備えた増幅器に関する。図16は、第10の実施形態に係る増幅器を示す結線図である。
GaN系のチャネル層と、
前記チャネル層中に二次元電子ガスを生じさせる、前記チャネル層の上方の窒化物半導体のバリア層と、
前記バリア層の上方の窒化物半導体のキャップ層と、
を有し、
前記キャップ層は、
Feがドーピングされた第1の領域と、
前記第1の領域よりもFeの濃度が低い、前記第1の領域の上方の第2の領域と、
を有することを特徴とする化合物半導体装置。
前記第2の領域におけるFeの濃度は、前記第1の領域から離間するほど低いことを特徴とする付記1に記載の化合物半導体装置。
前記第1の領域におけるFeの濃度が1×1015atoms/cm3以上であることを特徴とする付記1又は2に記載の化合物半導体装置。
前記第1の領域よりもFeの濃度が低い、前記バリア層と前記キャップ層との間の窒化物半導体の拡散緩和層を有することを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記拡散緩和層は、前記バリア層よりも高い割合でAlを含有することを特徴とする付記4に記載の化合物半導体装置。
前記第2の領域の上面におけるFeの濃度が1×1019atoms/cm3以下であることを特徴とする付記1乃至5のいずれか1項に記載の化合物半導体装置。
付記1乃至6のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至6のいずれか1項に記載の化合物半導体装置を有することを特徴とする増幅器。
GaN系のチャネル層の上方に、前記チャネル層中に二次元電子ガスを生じさせる窒化物半導体のバリア層を形成する工程と、
前記バリア層の上方に窒化物半導体のキャップ層を形成する工程と、
を有し、
前記キャップ層を形成する工程は、
Feをドーピングしながら第1の領域を形成する工程と、
前記第1の領域の上方に、前記第1の領域よりもFeの濃度が低い第2の領域を形成する工程と、
を有することを特徴とする化合物半導体装置の製造方法。
前記第2の領域におけるFeの濃度は、前記第1の領域から離間するほど低いことを特徴とする付記9に記載の化合物半導体装置の製造方法。
前記第1の領域におけるFeの濃度が1×1015atoms/cm3以上であることを特徴とする付記9又は10に記載の化合物半導体装置の製造方法。
前記バリア層を形成する工程と前記キャップ層を形成する工程との間に、前記バリア層の上方に、前記第1の領域よりもFeの濃度が低い窒化物半導体の拡散緩和層を形成する工程を有することを特徴とする付記9乃至11のいずれか1項に記載の化合物半導体装置の製造方法。
前記拡散緩和層は、前記バリア層よりも高い割合でAlを含有することを特徴とする付記12に記載の化合物半導体装置の製造方法。
103:チャネル層
104:バリア層
105:第1の領域
106:第2の領域
207:拡散緩和層
109:キャップ層
Claims (9)
- GaN系のチャネル層と、
前記チャネル層中に二次元電子ガスを生じさせる、前記チャネル層の上方の窒化物半導体のバリア層と、
前記バリア層の上方の窒化物半導体のキャップ層と、
を有し、
前記キャップ層は、
Feがドーピングされた第1の領域と、
前記第1の領域よりもFeの濃度が低い、前記第1の領域の上方の第2の領域と、
を有することを特徴とする化合物半導体装置。 - 前記第2の領域におけるFeの濃度は、前記第1の領域から離間するほど低いことを特徴とする請求項1に記載の化合物半導体装置。
- 前記第1の領域におけるFeの濃度が1×1015atoms/cm3以上であることを特徴とする請求項1又は2に記載の化合物半導体装置。
- 前記第1の領域よりもFeの濃度が低い、前記バリア層と前記キャップ層との間の窒化物半導体の拡散緩和層を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 前記拡散緩和層は、前記バリア層よりも高い割合でAlを含有することを特徴とする請求項4に記載の化合物半導体装置。
- 請求項1乃至5のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1乃至5のいずれか1項に記載の化合物半導体装置を有することを特徴とする増幅器。
- GaN系のチャネル層の上方に、前記チャネル層中に二次元電子ガスを生じさせる窒化物半導体のバリア層を形成する工程と、
前記バリア層の上方に窒化物半導体のキャップ層を形成する工程と、
を有し、
前記キャップ層を形成する工程は、
Feをドーピングしながら第1の領域を形成する工程と、
前記第1の領域の上方に、前記第1の領域よりもFeの濃度が低い第2の領域を形成する工程と、
を有することを特徴とする化合物半導体装置の製造方法。 - 前記バリア層を形成する工程と前記キャップ層を形成する工程との間に、前記バリア層の上方に、前記第1の領域よりもFeの濃度が低い窒化物半導体の拡散緩和層を形成する工程を有することを特徴とする請求項8に記載の化合物半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015213329A JP6674087B2 (ja) | 2015-10-29 | 2015-10-29 | 化合物半導体装置及びその製造方法 |
US15/272,993 US9997594B2 (en) | 2015-10-29 | 2016-09-22 | Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015213329A JP6674087B2 (ja) | 2015-10-29 | 2015-10-29 | 化合物半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017085013A true JP2017085013A (ja) | 2017-05-18 |
JP6674087B2 JP6674087B2 (ja) | 2020-04-01 |
Family
ID=58635258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015213329A Active JP6674087B2 (ja) | 2015-10-29 | 2015-10-29 | 化合物半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9997594B2 (ja) |
JP (1) | JP6674087B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108062442B (zh) * | 2017-12-12 | 2021-04-06 | 成都海威华芯科技有限公司 | 一种AlGaN/GaN HEMT微波功率器件小信号本征参数提取方法 |
US10644142B2 (en) * | 2017-12-22 | 2020-05-05 | Nxp Usa, Inc. | Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor |
CN112242441A (zh) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
JP2021144993A (ja) * | 2020-03-10 | 2021-09-24 | 富士通株式会社 | 半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006128586A (ja) * | 2004-09-29 | 2006-05-18 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
JP2006165314A (ja) * | 2004-12-08 | 2006-06-22 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
JP2008198691A (ja) * | 2007-02-09 | 2008-08-28 | New Japan Radio Co Ltd | 窒化物半導体装置 |
JP2008227501A (ja) * | 2007-03-12 | 2008-09-25 | Cree Inc | 窒化物ベースのトランジスタのための窒化アルミニウムを含むキャップ層およびその作製方法 |
JP2008258456A (ja) * | 2007-04-06 | 2008-10-23 | Opnext Japan Inc | 窒化物半導体レーザ装置およびその製造方法 |
JP2012028706A (ja) * | 2010-07-27 | 2012-02-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2012043964A (ja) * | 2010-08-19 | 2012-03-01 | Mitsubishi Electric Corp | ヘテロ接合電界効果トランジスタ及びその製造方法 |
JP2013207107A (ja) * | 2012-03-28 | 2013-10-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6119165B2 (ja) | 2012-09-28 | 2017-04-26 | 富士通株式会社 | 半導体装置 |
US10541323B2 (en) * | 2016-04-15 | 2020-01-21 | Macom Technology Solutions Holdings, Inc. | High-voltage GaN high electron mobility transistors |
-
2015
- 2015-10-29 JP JP2015213329A patent/JP6674087B2/ja active Active
-
2016
- 2016-09-22 US US15/272,993 patent/US9997594B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006128586A (ja) * | 2004-09-29 | 2006-05-18 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
JP2006165314A (ja) * | 2004-12-08 | 2006-06-22 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
JP2008198691A (ja) * | 2007-02-09 | 2008-08-28 | New Japan Radio Co Ltd | 窒化物半導体装置 |
JP2008227501A (ja) * | 2007-03-12 | 2008-09-25 | Cree Inc | 窒化物ベースのトランジスタのための窒化アルミニウムを含むキャップ層およびその作製方法 |
JP2008258456A (ja) * | 2007-04-06 | 2008-10-23 | Opnext Japan Inc | 窒化物半導体レーザ装置およびその製造方法 |
JP2012028706A (ja) * | 2010-07-27 | 2012-02-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2012043964A (ja) * | 2010-08-19 | 2012-03-01 | Mitsubishi Electric Corp | ヘテロ接合電界効果トランジスタ及びその製造方法 |
JP2013207107A (ja) * | 2012-03-28 | 2013-10-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9997594B2 (en) | 2018-06-12 |
US20170125516A1 (en) | 2017-05-04 |
JP6674087B2 (ja) | 2020-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5990976B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP5895666B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2013211481A (ja) | 化合物半導体装置及びその製造方法 | |
JP2015060987A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2013207107A (ja) | 化合物半導体装置及びその製造方法 | |
JP2013207102A (ja) | 化合物半導体装置及びその製造方法 | |
JP7024534B2 (ja) | 半導体装置及びその製造方法 | |
JP2013074210A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP6703269B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP6674087B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP7009952B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2013207103A (ja) | 化合物半導体装置及びその製造方法 | |
JP2020027911A (ja) | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 | |
JP2016207818A (ja) | 化合物半導体装置及びその製造方法 | |
JP6652701B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP6649586B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP6311480B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2017092083A (ja) | 化合物半導体装置及びその製造方法 | |
JP6183145B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP7371384B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2020072218A (ja) | 化合物半導体装置、高周波増幅器及び電源装置 | |
JP2015002341A (ja) | 化合物半導体装置及びその製造方法 | |
JP2013247153A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2017085006A (ja) | 化合物半導体装置及びその製造方法 | |
JP6940762B2 (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190528 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190802 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200217 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6674087 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |