JP6311480B2 - 化合物半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 158
- 150000001875 compounds Chemical class 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 115
- 239000012535 impurity Substances 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 11
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- 238000005468 ion implantation Methods 0.000 description 8
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- 229910000679 solder Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
先ず、第1の実施形態について説明する。第1の実施形態はGaN系HEMTの一例である。図1は、第1の実施形態に係る化合物半導体装置を示す図である。図1(a)は断面構造の概略を示し、図1(b)は、バンド構造の概略を示す。
るおそれがある。
次に、第2の実施形態について説明する。第2の実施形態はGaN系HEMTの一例である。図2は、第2の実施形態に係る化合物半導体装置を示す図である。図2(a)は断面構造の概略を示し、図2(b)は、バンド構造の概略を示す。
得られないだけでなく、リーク電流が増加するおそれがある。また、不純物含有領域202に含まれる不純物が形成する準位とシリコンの価電子帯の上端との差が0.25eV未満であると、当該不純物がアクセプタとして機能し、十分な再結合中心213が得られないおそれがある。
次に、第3の実施形態について説明する。第3の実施形態はGaN系HEMTの一例である。図3は、第3の実施形態に係る化合物半導体装置を示す断面図である。
次に、第4の実施形態について説明する。第4の実施形態では、図4A乃至図4Bに示す方法とは異なる方法で、第3の実施形態と同様の化合物半導体装置を製造する。図6は、第4の実施形態に係る化合物半導体装置の製造方法を工程順に示す断面図である。
第5の実施形態は、GaN系HEMTのディスクリートパッケージに関する。図7は、第5の実施形態に係るディスクリートパッケージを示す図である。
次に、第6の実施形態について説明する。第6の実施形態は、GaN系HEMTを備えたPFC(Power Factor Correction)回路に関する。図8は、第6の実施形態に係るPFC回路を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、GaN系HEMTを備えた電源装置に関する。図9は、第7の実施形態に係る電源装置を示す結線図である。
次に、第8の実施形態について説明する。第8の実施形態は、GaN系HEMTを備えた増幅器に関する。図10は、第8の実施形態に係る増幅器を示す結線図である。
半導体基板と、
前記半導体基板上方のチャネル層と、
前記チャネル層上方のキャリア供給層と、
前記キャリア供給層の上方のゲート電極、ソース電極及びドレイン電極と、
を有し、
前記半導体基板は、不純物を含有する不純物含有領域を有し、
前記不純物が形成する準位は、シリコンの伝導帯の下端よりも0.25eV以上低く、
シリコンの価電子帯の上端よりも高いことを特徴とする化合物半導体装置。
前記半導体基板は、シリコン基板又は炭化シリコン基板であることを特徴とする付記1に記載の化合物半導体装置。
前記不純物は、Fe、C、Au、B若しくはMg又はこれらの任意の組み合わせであることを特徴とする付記1又は2に記載の化合物半導体装置。
前記不純物が形成する準位は、シリコンの価電子帯の上端よりも0.25eV以上高い
ことを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記半導体基板の上面から少なくとも深さ50nmまでの領域が、不純物の平均濃度が1×1018cm-3以上の前記不純物含有領域であることを特徴とする付記1乃至4のいずれか1項に記載の化合物半導体装置。
前記半導体基板中でのキャリアライフタイムが1×10-9秒以下であることを特徴とする付記1乃至5のいずれか1項に記載の化合物半導体装置。
付記1乃至6のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至6のいずれか1項に記載の化合物半導体装置を有することを特徴とする増幅器。
半導体基板に不純物を含有する不純物含有領域を形成する工程と、
前記半導体基板上方にチャネル層を形成する工程と、
前記チャネル層上方にキャリア供給層を形成する工程と、
前記キャリア供給層の上方にゲート電極、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記不純物が形成する準位は、シリコンの伝導帯の下端よりも0.25eV以上低く、
シリコンの価電子帯の上端よりも高いことを特徴とする化合物半導体装置の製造方法。
前記半導体基板は、シリコン基板又は炭化シリコン基板であることを特徴とする付記9に記載の化合物半導体装置の製造方法。
前記不純物は、Fe、C、Au、B若しくはMg又はこれらの任意の組み合わせであることを特徴とする付記9又は10に記載の化合物半導体装置の製造方法。
前記不純物が形成する準位は、シリコンの価電子帯の上端よりも0.25eV以上高い
ことを特徴とする付記9乃至11のいずれか1項に記載の化合物半導体装置の製造方法。
101、201、301:半導体基板
102、202、302:不純物含有領域
103、203、303:チャネル層
104、204、304:キャリア供給層
Claims (4)
- 半導体基板と、
前記半導体基板上方の窒化物半導体のチャネル層と、
前記チャネル層上方の窒化物半導体のキャリア供給層と、
前記キャリア供給層の上方のゲート電極、ソース電極及びドレイン電極と、
を有し、
前記半導体基板は、不純物を含有する不純物含有領域を有し、
前記半導体基板は、シリコン基板又は炭化シリコン基板であり、
前記不純物が形成する準位は、前記半導体基板結晶の伝導帯の下端よりも0.25eV以上低く、かつ前記半導体基板結晶の価電子帯の上端よりも高く、
前記不純物は、C、B若しくはMg又はこれらの任意の組み合わせであり、
前記不純物が形成する準位は、前記半導体基板結晶の価電子帯の上端よりも0.25eV以上高いことを特徴とする化合物半導体装置。 - 請求項1に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1に記載の化合物半導体装置を有することを特徴とする増幅器。
- 半導体基板に不純物を含有する不純物含有領域を形成する工程と、
前記半導体基板上方に窒化物半導体のチャネル層を形成する工程と、
前記チャネル層上方に窒化物半導体のキャリア供給層を形成する工程と、
前記キャリア供給層の上方にゲート電極、ソース電極及びドレイン電極を形成する工程と、
を有し、
前記半導体基板は、シリコン基板又は炭化シリコン基板であり、
前記不純物が形成する準位は、前記半導体基板結晶の伝導帯の下端よりも0.25eV以上低く、かつ前記半導体基板結晶の価電子帯の上端よりも高く、
前記不純物は、C、B若しくはMg又はこれらの任意の組み合わせであり、
前記不純物が形成する準位は、前記半導体基板結晶の価電子帯の上端よりも0.25eV以上高いことを特徴とする化合物半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014129563A JP6311480B2 (ja) | 2014-06-24 | 2014-06-24 | 化合物半導体装置及びその製造方法 |
US14/747,060 US9653590B2 (en) | 2014-06-24 | 2015-06-23 | Compound semiconductor device and method of manufacturing the same |
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