JP2017026387A - 物理量センサ - Google Patents
物理量センサ Download PDFInfo
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- JP2017026387A JP2017026387A JP2015143306A JP2015143306A JP2017026387A JP 2017026387 A JP2017026387 A JP 2017026387A JP 2015143306 A JP2015143306 A JP 2015143306A JP 2015143306 A JP2015143306 A JP 2015143306A JP 2017026387 A JP2017026387 A JP 2017026387A
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- 238000003199 nucleic acid amplification method Methods 0.000 description 5
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- 238000002955 isolation Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/006—Details of instruments used for thermal compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Geometry (AREA)
- Pressure Sensors (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
【解決手段】物理量センサ1は、所定の物理量を検出して電気信号を出力するセンサ素子10と、センサ素子に接続される複数のリード部22と、センサ素子および複数のリード部を収容するパッケージ基板30とを備える。複数のリード部は、その基端側がパッケージ基板側に接続され、その先端側がセンサ素子側に接続されており、複数のリード部は、センサ素子がパッケージ基板に接触しないように、かつパッケージ基板側の変形がセンサ素子へ伝わるのを抑制するように、センサ素子を支持する。
【選択図】図2
Description
Claims (11)
- 物理量を計測する物理量センサであって、
所定の物理量を検出して電気信号を出力するセンサ素子と、
前記センサ素子に接続される複数のリード部と、
前記センサ素子および前記複数のリード部を収容するパッケージ基板と、
を備え、
前記複数のリード部は、その基端側が前記パッケージ基板側に接続され、その先端側が前記センサ素子側に接続されており、
前記複数のリード部は、前記センサ素子が前記パッケージ基板に接触しないように、かつ前記パッケージ基板側の変形が前記センサ素子へ伝わるのを抑制するように、前記センサ素子を支持する、
物理量センサ。 - 前記パッケージ基板は気密構造を有しており、前記パッケージ基板内に封入された気体によって、前記センサ素子と前記パッケージ基板の間の隙間に気体ダンパが形成される、
請求項1に記載の物理量センサ。 - 前記複数のリード部は、前記センサ素子を対称に支持する、
請求項2に記載の物理量センサ。 - 前記センサ素子は対称形状を有しており、
前記センサ素子の周縁側に前記複数のリード部が所定間隔で配置されており、
前記複数のリード部は、前記センサ素子を均一に支持する、
請求項3に記載の物理量センサ。 - 前記複数のリード部はリード基板に設けられており、
前記センサ素子は、前記リード基板に搭載されており、
前記複数のリード部は、前記リード基板を介して前記センサ素子を支持する、
請求項4に記載の物理量センサ。 - 前記リード基板の線膨張係数と前記センサ素子の線膨張係数との差が小さくなるように設定されているか、または、前記リード基板の両面のうち前記センサ素子が搭載されている一方の面とは反対側の他方の面に前記センサ素子と同様の線膨張係数を有する所定の基板が設けられている、請求項5に記載の物理量センサ。
- 前記所定の基板は、前記センサ素子からの出力信号を処理する基板である、
請求項6に記載の物理量センサ。 - 前記複数のリード部は、ボンディングワイヤよりも剛性の高いリードフレームとして形成される、
請求項7に記載の物理量センサ。 - 前記複数のリード部には、前記センサ素子に電気的かつ機械的に接続される複数の第1リード部と、前記センサ素子に機械的に接続される複数の第2リード部が含まれる、
請求項8に記載の物理量センサ。 - 前記各第1リード部は、その先端側が前記リード基板のうち、前記リード基板に力が加わった場合の応力の小さい所定領域に設けられている、
請求項9に記載の物理量センサ。 - 前記リード基板は、平面視矩形状に形成されており、
前記複数のリード部は、前記リード基板の四辺に所定間隔で配置されている、
請求項5に記載の物理量センサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015143306A JP6513519B2 (ja) | 2015-07-17 | 2015-07-17 | 物理量センサ |
US15/182,657 US20170018471A1 (en) | 2015-07-17 | 2016-06-15 | Physical Quantity Sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015143306A JP6513519B2 (ja) | 2015-07-17 | 2015-07-17 | 物理量センサ |
Publications (2)
Publication Number | Publication Date |
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JP2017026387A true JP2017026387A (ja) | 2017-02-02 |
JP6513519B2 JP6513519B2 (ja) | 2019-05-15 |
Family
ID=57776569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015143306A Expired - Fee Related JP6513519B2 (ja) | 2015-07-17 | 2015-07-17 | 物理量センサ |
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US (1) | US20170018471A1 (ja) |
JP (1) | JP6513519B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11910720B2 (en) | 2019-12-26 | 2024-02-20 | Seiko Epson Corporation | Piezoelectric device and MEMS device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10132705B2 (en) * | 2016-07-19 | 2018-11-20 | Kulite Semiconductor Products, Inc. | Low-stress floating-chip pressure sensors |
JP6753364B2 (ja) * | 2017-06-21 | 2020-09-09 | 三菱電機株式会社 | 半導体装置 |
JP6896679B2 (ja) * | 2018-07-03 | 2021-06-30 | 株式会社東芝 | ガスセンサ |
JP2021067625A (ja) * | 2019-10-28 | 2021-04-30 | セイコーエプソン株式会社 | 慣性計測装置、電子機器及び移動体 |
JP2022054045A (ja) * | 2020-09-25 | 2022-04-06 | セイコーエプソン株式会社 | 慣性計測装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302166A (ja) * | 1988-02-22 | 1989-12-06 | Soc Appl Gen Electr Mec <Sagem> | 振子型加速度計 |
JPH02116755A (ja) * | 1988-09-23 | 1990-05-01 | Automot Syst Lab Inc | 加速度計及びその較正方法 |
JPH02249261A (ja) * | 1989-03-22 | 1990-10-05 | Mitsubishi Electric Corp | 半導体装置 |
JPH0992670A (ja) * | 1995-09-27 | 1997-04-04 | Omron Corp | センサ装置の構造およびその構造を実現するための実装方法 |
JPH09304211A (ja) * | 1996-05-15 | 1997-11-28 | Omron Corp | 静電容量型圧力センサのパッケージング構造およびパッケージング方法 |
JP2007064753A (ja) * | 2005-08-30 | 2007-03-15 | Denso Corp | 角速度センサの取付構造 |
JP2010190706A (ja) * | 2009-02-18 | 2010-09-02 | Panasonic Corp | 慣性力センサ |
CA2915176A1 (en) * | 2013-05-02 | 2014-11-06 | Northrop Grumman Litef Gmbh | Acceleration sensor and method for producing an acceleration sensor |
JP2015015477A (ja) * | 2014-08-06 | 2015-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002082009A (ja) * | 2000-06-30 | 2002-03-22 | Denso Corp | 圧力センサ |
US8338208B2 (en) * | 2009-12-31 | 2012-12-25 | Texas Instruments Incorporated | Micro-electro-mechanical system having movable element integrated into leadframe-based package |
US9448216B2 (en) * | 2014-10-10 | 2016-09-20 | Stmicroelectronics Pte Ltd | Gas sensor device with frame passageways and related methods |
-
2015
- 2015-07-17 JP JP2015143306A patent/JP6513519B2/ja not_active Expired - Fee Related
-
2016
- 2016-06-15 US US15/182,657 patent/US20170018471A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302166A (ja) * | 1988-02-22 | 1989-12-06 | Soc Appl Gen Electr Mec <Sagem> | 振子型加速度計 |
JPH02116755A (ja) * | 1988-09-23 | 1990-05-01 | Automot Syst Lab Inc | 加速度計及びその較正方法 |
JPH02249261A (ja) * | 1989-03-22 | 1990-10-05 | Mitsubishi Electric Corp | 半導体装置 |
JPH0992670A (ja) * | 1995-09-27 | 1997-04-04 | Omron Corp | センサ装置の構造およびその構造を実現するための実装方法 |
JPH09304211A (ja) * | 1996-05-15 | 1997-11-28 | Omron Corp | 静電容量型圧力センサのパッケージング構造およびパッケージング方法 |
JP2007064753A (ja) * | 2005-08-30 | 2007-03-15 | Denso Corp | 角速度センサの取付構造 |
JP2010190706A (ja) * | 2009-02-18 | 2010-09-02 | Panasonic Corp | 慣性力センサ |
CA2915176A1 (en) * | 2013-05-02 | 2014-11-06 | Northrop Grumman Litef Gmbh | Acceleration sensor and method for producing an acceleration sensor |
JP2015015477A (ja) * | 2014-08-06 | 2015-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11910720B2 (en) | 2019-12-26 | 2024-02-20 | Seiko Epson Corporation | Piezoelectric device and MEMS device |
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US20170018471A1 (en) | 2017-01-19 |
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