JP2016522578A - 高速光検出器 - Google Patents
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- 230000005684 electric field Effects 0.000 claims abstract description 34
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- 238000009826 distribution Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 56
- 230000007480 spreading Effects 0.000 claims description 22
- 238000003892 spreading Methods 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 5
- -1 GaAs compound Chemical class 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 abstract description 52
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 230000009467 reduction Effects 0.000 abstract description 8
- 239000002800 charge carrier Substances 0.000 abstract description 5
- 230000007704 transition Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 370
- 239000000969 carrier Substances 0.000 description 32
- 230000006870 function Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 18
- 230000004044 response Effects 0.000 description 17
- 238000011161 development Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 11
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- 238000010586 diagram Methods 0.000 description 6
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- 238000013459 approach Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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Abstract
Description
変化を概略的に示す。各層に関するバンドギャップエネルギーは、バンド図200の垂直方向における各層の伝導帯端202と価電子帯端204との間の分離として描かれている。バンド図200における水平方向は、図1に示される光検出器100のアノード114とカソード120との間のキャリアの導電パスを表す。
101 基板
102 光吸収層
104 ドリフト層
106 入射光
105 傾斜バンドギャップ層(傾斜層)
110 窓、p型電流拡散層
112 キャッピング及びpコンタクト層
114 アノード
116 n側電流拡散層
118 nコンタクト層
120 カソード
122 少数キャリア(正孔)に対するバリア(及びエッチング停止として機能することができる)
124 垂直方向
200 バンドギャップ図
202 伝導帯端
204 価電子帯端
206 光吸収層のバンドギャップエネルギー
208 ドリフト層のバンドギャップエネルギー
Claims (15)
- 光検出器であって、
意図する範囲内の波長の光を吸収するように構成された第1のバンドギャップエネルギー(206)を有する第1の半導体材料を含む第1の層(102)と、
前記第1の層(102)の隣接側と接続する第2の層(104)とを備え、
前記第2の層(104)は、前記第1のバンドギャップエネルギー(206)よりも高い第2のバンドギャップエネルギー(208)を有する第2の半導体材料を含み、
前記第1の層(102)、前記第2の層(104)、及び前記第1と第2の層との間の領域うちの少なくとも一つにおけるドーピング濃度の分布は、前記第2の層(104)内に確立される非ゼロ電界が、同一の逆バイアス状況下で前記第1の層(102)内に確立される電界よりも小さくなるというものである光検出器。 - 前記ドーピング濃度は、
前記第1の層(102)の少なくとも一部が、前記逆バイアス状況下で実質的に空乏状態である、及び/又は、
前記第2の層(104)における前記ドーピング濃度は、前記第1の層(102)における前記ドーピング濃度よりも高いというものである、
請求項1に記載の光検出器。 - 前記第2の層(104)に隣接する前記第1の層(102)の領域における前記ドーピング濃度は、前記第1の層(102)の前記領域外の前記第1の層(102)の大部分における前記ドーピング濃度よりも高い、又は
前記第1の層(102)に隣接する前記第2の層(104)の領域における前記ドーピング濃度は、前記第2の層(104)の前記領域外の前記第2の層(104)の大部分における前記ドーピング濃度よりも高い、
請求項1又は請求項2に記載の光検出器。 - 前記第2の半導体材料は、軽度にn型にドープされた半導体材料である、
請求項1〜3のいずれか一項に記載の光検出器。 - 前記第1のバンドギャップエネルギー(206)及び前記第2のバンドギャップエネルギー(208)は、前記第1の層(102)及び前記第2の層(104)の厚みに沿って実質的に均一である、
請求項1〜4のいずれか一項に記載の光検出器。 - 前記第1の層(102)を前記第2の層(104)に接続させる第3の層(105)を更に備え、
前記第3の層(105)は、前記第3の層(105)の厚みに沿って傾斜バンドギャップエネルギーを有する第3の半導体材料を備える、
請求項1〜5のいずれか一項に記載の光検出器。 - 前記傾斜バンドギャップエネルギーは、前記第1の層(102)に面する前記第3の層(105)の側における前記第1のバンドギャップエネルギー(206)に実質的に等しい値から、前記第2の層(104)に面する前記第3の層(105)の側における前記第2のバンドギャップエネルギー(208)に実質的に等しい値に増大する、
請求項6に記載の光検出器。 - 前記第3の半導体材料は、前記第1の層(102)に面する前記第3の層(105)の前記側において前記第1の半導体材料と実質的に等しい組成から、前記第2の層(104)に面する前記第3の層(105)の前記側において前記第2の半導体材料と実質的に等しい組成に徐々に変化する傾斜組成を有する、及び/又は、
前記第3の半導体材料は、前記第2の層(104)のドーパントと同一の型のドーパントによってドープされた領域を備える、
請求項6又は請求項7に記載の光検出器。 - 前記第3の層(105)は、前記第2の層(104)及び/又は前記第1の層(102)に含まれ、
前記第3の層(105)は、前記第2の層(104))及び/又は前記第1の層(102)の端側に設けられる、
請求項5〜8のいずれか一項に記載の光検出器。 - 外部電気回路に結合されるように構成された第1のオーミックコンタクト(114)と、
前記第1のオーミックコンタクト(114)と、前記第2の層(104)とは反対の前記第1の層(102)の隣接側との間に配置される第4の層(110)とをさらに備え、
前記第4の層(110)は、第4のバンドギャップエネルギー及び第4のドーピング濃度を有する第4の半導体材料を含み、
前記第4の層(110)は、前記第1の層(102)から前記第1のオーミックコンタクト(114)への輸送電流の抽出を容易にするための電流拡散層として機能するように構成される、
請求項1〜9のいずれか一項に記載の光検出器。 - 前記第4のバンドギャップエネルギーは、前記第4の層(110)が窓層であるように、前記第1のバンドギャップエネルギー(206)よりも高い、
請求項10に記載の光検出器。 - 外部電気回路に結合されるように構成された第2のオーミックコンタクト(120)と、
前記第2のオーミックコンタクト(120)と、前記第1の層(102)とは反対の前記第2の層(104)の隣接側との間に配置された第5の層(116)とをさらに備え、
前記第5の層(116)は、第5のバンドギャップエネルギー及び第5のドーピング濃度を有する第5の半導体材料を含み、
前記第5の層(116)は、前記第2の層(104)から前記第2のオーミックコンタクト(120)への輸送電流の抽出を容易にするための電流拡散層として機能するように構成される、
請求項1〜11のいずれか一項に記載の光検出器。 - 前記第1及び第2のオーミック電極の少なくとも一方はリング形状を有する、
請求項10〜12のいずれか一項に記載の光検出器。 - 前記第2の層(104)と前記第5の層(116)との間に配置された第7の層(122)をさらに備え、
前記第7の層(122)は、第7のバンドギャップエネルギー及び第7のドーピング濃度を有する第7の半導体材料を含み、
前記第7のバンドギャップエネルギーは、前記第7の層(122)を通る少数キャリアの流れが遮断されるように前記第2のバンドギャップエネルギー(208)及び前記第5のバンドギャップエネルギーよりも高い、
請求項1〜13のいずれか一項に記載の光検出器。 - 前記第1の半導体材料はGaAs化合物を備え、
前記第2〜第7の半導体材料のうちの少なくとも一つはAlGaAs化合物を備える、
請求項1〜14のいずれか一項に記載の光検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13002838.4 | 2013-05-31 | ||
EP13002838.4A EP2808908B1 (en) | 2013-05-31 | 2013-05-31 | High-speed photodetector |
PCT/EP2014/060432 WO2014191275A1 (en) | 2013-05-31 | 2014-05-21 | High speed photodetector |
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JP2016522578A true JP2016522578A (ja) | 2016-07-28 |
JP2016522578A5 JP2016522578A5 (ja) | 2017-07-27 |
JP6466416B2 JP6466416B2 (ja) | 2019-02-06 |
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US (1) | US9882080B2 (ja) |
EP (1) | EP2808908B1 (ja) |
JP (1) | JP6466416B2 (ja) |
CN (1) | CN105283964B (ja) |
SG (1) | SG11201508462PA (ja) |
TW (1) | TWI620339B (ja) |
WO (1) | WO2014191275A1 (ja) |
Cited By (3)
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JP2018032663A (ja) * | 2016-08-22 | 2018-03-01 | 富士通株式会社 | 光検出器及び撮像装置 |
JP2021511655A (ja) * | 2018-01-29 | 2021-05-06 | ウェイモ エルエルシー | 光検出器における検出時間の制御 |
JP2022525495A (ja) * | 2019-03-26 | 2022-05-17 | “フューチャー イン ザ グリーン エナジー”リミティッド ライアビリティー カンパニー | 半導体の熱電発電装置 |
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WO2017019158A1 (en) * | 2015-07-28 | 2017-02-02 | University Of Rochester | Low dark current, resonant cavity-enhanced infrared photodetectors |
US10396527B2 (en) * | 2017-06-14 | 2019-08-27 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser with high modulation speed |
CN109244152B (zh) * | 2018-08-02 | 2023-09-29 | 芯思杰技术(深圳)股份有限公司 | 一种短距离通信高速光电二极管芯片及其制作方法 |
TWI835924B (zh) * | 2019-11-18 | 2024-03-21 | 晶元光電股份有限公司 | 光偵測元件 |
CN112420859B (zh) * | 2020-11-18 | 2022-05-13 | 上海科技大学 | 850nm波段吸收区部分耗尽光电探测器及其制备方法 |
CN114520270B (zh) * | 2020-11-20 | 2024-07-05 | 苏州华太电子技术股份有限公司 | 一种间接带隙半导体光电探测器件及其制作方法 |
CN114864730A (zh) * | 2021-02-04 | 2022-08-05 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
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-
2013
- 2013-05-31 EP EP13002838.4A patent/EP2808908B1/en active Active
-
2014
- 2014-05-21 WO PCT/EP2014/060432 patent/WO2014191275A1/en active Application Filing
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TW201507187A (zh) | 2015-02-16 |
US20160172523A1 (en) | 2016-06-16 |
JP6466416B2 (ja) | 2019-02-06 |
EP2808908A1 (en) | 2014-12-03 |
EP2808908B1 (en) | 2023-04-19 |
TWI620339B (zh) | 2018-04-01 |
US9882080B2 (en) | 2018-01-30 |
WO2014191275A1 (en) | 2014-12-04 |
CN105283964B (zh) | 2018-04-13 |
CN105283964A (zh) | 2016-01-27 |
SG11201508462PA (en) | 2015-11-27 |
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